Datasheet mmbt3904w Datasheet

Elektronische Bauelemente

MMBT3904W

NPN Silicon

General Purpose Transistor

FEATURES

Epitaxial Planar Die Construction

·

Complementary PNP Type Available

·

(MMBT3906W)

Ideal for Medium Power Amplification and

·

Switching

COLLECTOR

3

1

BASE

2

EMITTER

1

A suffix of "-C" specifies halogen & lead-free

2

SC-70

SOT-323

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

Collector– Base Voltage V

Emitter– Base Voltage V

Collector Current — Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR– 5 Board

T

= 25°C

A

Derate above 25°C

Thermal Resistance Junction to Ambient

Total Device Dissipation

Alumina Substrate,

Derate above 25°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature TJ, T

(2)

T

A

= 25°C

(1)

DEVICE MARKING

MMBT3904W = 1A, K2N

RoHS Compliant Product

A

3

Top View

1

3

D

CEO

CBO

EBO

C

P

D

R

q

JA

P

D

R

q

JA

stg

GV

40 Vdc

60 Vdc

6.0 Vdc

200 mAdc

200

1.6

625 °C/W

300

2.4

417 °C/W

– 55 to +150 °C

SOT-323(SC-70)

Dim Min Max

L

S

B

2

C

H

K

mW

mW/°C

mW

mW/°C

J

A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420

All Dimension in mm

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector– Emitter Breakdown Voltage (3)

(IC = 1.0 mAdc, IB = 0)

Collector– Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

Emitter– Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

1. FR– 5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

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01-Jun-2007 Rev. B

REM : Thermal Clad is a registered trademark of the Berquist Company.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BL

I

CEX

Any changing of specification will not be informed individual

40 — Vdc

60 — Vdc

6.0 — Vdc

— 50 nAdc

Page 1 of 6

Elektronische Bauelemente

(T

ELECTRICAL CHARACTERISTICS

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc)

Collector– Emitter Saturation Voltage (3)

(IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

Base – Emitter Saturation Voltage (3)

(IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

(3)

SMALL–SIGNAL CHARACTERISTICS

Current– Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Small– Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Output Admittance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Noise Figure

(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Max Unit

(VCC = 3.0 Vdc, VBE = – 0.5 Vdc,

(

CC IC = 10 mAdc, IB1 = 1.0 mAdc)

(VCC = 3.0 Vdc,

(

CC IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

MMBT3904W

NPN Silicon

General Purpose Transistor

H

FE

V

CE(sat)

V

BE(sat)

f

T

C

obo

C

ibo

h

ie

h

re

h

fe

h

oe

NF — 5.0 dB

t

,

BE

,

d

t

r

t

s

t

f

40 70

100

60 30

— —

0.65 —

300 — MHz

— 4.0 pF

— 8.0 pF

1.0 10 k ohms

0.5 8.0 X 10

100 400 —

1.0 40

— 35

— 200

— 50

— —

300

— —

0.2

0.3

0.85

0.95

Vdc

m

mhos

—

ns

–4

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01-Jun-2007 Rev. B

Any changing of specification will not be informed individual

Page 2 of 6

Elektronische Bauelemente

MMBT3904W

NPN Silicon

General Purpose Transistor

Duty Cycle = 2% 300 ns

– 0.5 V

10

7.0

5.0

3.0

Capacitance (pF)

2.0

1.0

0.1

+10.9 V

10 k

< 1 ns

Figure 1. Delay and Rise Time

Equivalent T est Circuit

C

ibo

C

obo

0.2 0.3 0.5 0.7

1.0 2.0 3.0 5.0 7.0 10 20

Reverse Bias Voltage (V)

+3 V

275

* Total shunt capacitance of test jig and connectors

CS < 4 pF*

10 < t1 < 500

Duty Cycle = 2%

m

0

s

– 9.1 V

t

1

+10.9 V

′

< 1 ns

Figure 2. Storage and Fall Time

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C TJ = 125

°

C

5000

VCC = 40 V

3000

IC/IB = 10

2000

1000

700

500

300

Q, Charge (pC)

200

100

70

30 40

50

1.0

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

+3 V

10 k

1N916

Equivalent T est Circuit

Q

T

IC, Collector Current (mA)

275

CS < 4 pF*

Q

A

Figure 3. Capacitance

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01-Jun-2007 Rev. B

Figure 4. Charge Data

Any changing of specification will not be informed individual

Page 3 of 6

Elektronische Bauelemente

MMBT3904W

NPN Silicon

General Purpose Transistor

500

300 200

100

70

50

Time (ns)

30 20

10

7

1.0 2.0 3.0 10 20

5.0 7.0 30 50

IC, Collector Current (mA)

Figure 5. Turn–On Time

500

300

′

s

t , Storage Time (ns)

200

100

70

50

30 20

IC/IB = 20

IC/IB = 10

td @ VOB = 0 V

IC/IB = 10

tr @ VCC = 3.0 V

40 V

15 V

2.0 V

705100

t

′

= ts – 1/8 t

s

IB1 = I

B2

IC/IB = 20

IC/IB = 10

200

f

500

300 200

100

70

50

30

r

t , Rise Time (ns)

20

10

7

1.0 2.0 3.0 10 20

5.0 7.0

IC, Collector Current (mA)

Figure 6. Rise Time

500

300 200

100

70 50

f

t , Fall Time (ns)

30 20

IC/IB = 10

IC/IB = 20

30 50

VCC = 40 V IC/IB = 10

705100

VCC = 40 V IB1 = I

B2

200

10

7

1.0 2.0 3.0 10 20

5.0 7.0

IC, Collector Current (mA)

Figure 7. Storage Time

12

10

NF, Noise Figure (dB)

8

6

4

2

0

SOURCE RESISTANCE = 200 IC = 1.0 mA

SOURCE RESISTANCE = 200 IC = 0.5 mA

SOURCE RESISTANCE = 500 IC = 100 mA

0.1

0.2 0.4

1.0 2.0 4.0 10 20

f, Frequency (kHz)

10

7

30 50

705100

200

1.0 2.0 3.0 10 20

5.0 7.0

IC, Collector Current (mA)

Figure 8. Fall Time

TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE V ARIATIONS

(VCE = 5.0 Vdc, T

W

SOURCE RESISTANCE = 1.0 k IC = 50

m

A

W

40

= 25°C, Bandwidth = 1.0 Hz)

A

14

f = 1.0 kHz

12

10

8

6

NF, Noise Figure (dB)

4

2

100

0

0.1 1.0 2.0 4.0 10 20

0.2 0.4

IC = 1.0 mA

IC = 0.5 mA

RS, Source Resistance (k OHMS)

30 50

IC = 100 mA

705100

IC = 50 mA

40

200

100

Figure 9.

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01-Jun-2007 Rev. B

Any changing of specification will not be informed individual

Figure 10.

Page 4 of 6

Elektronische Bauelemente

(VCE = 10 Vdc, f = 1.0 kHz, T

h PARAMETERS

MMBT3904W

NPN Silicon

General Purpose Transistor

= 25°C)

A

300

200

100

70

fe

h , Current Gain

50

30

0.1 0.2 1.0 2.0

0.3 0.5 3.0 IC, Collector Current (mA)

Figure 11. Current Gain

20

10

5.0

2.0

5.0 10

100

50

m

20

10

5

oe

h , Output Admittance ( mhos)

2

1

0.1 0.2 1.0 2.0

0.3 0.5 3.0 IC, Collector Current (mA)

Figure 12. Output Admittance

10

7.0

–4

5.0

3.0

2.0

5.0 10

1.0

0.5

ie

h , Input Impedance (k OHMS)

0.2

0.1 0.2 1.0 2.0

0.3 0.5 3.0 IC, Collector Current (mA)

Figure 13. Input Impedance

5.0 10

1.0

re

h , Voltage Feeback Ratio (X 10 )

0.7

0.5

0.1 0.2 1.0 2.0

0.3 0.5 3.0 IC, Collector Current (mA)

Figure 14. V oltage Feedback Ratio

5.0

TYPICAL STA TIC CHARACTERISTICS

2.0

1.0

0.7

0.5

0.3

0.2

FE

h , DC Current Gain (Normalized)

0.1

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01-Jun-2007 Rev. B

0.2 0.3

0.5 2.0 3.0 10 50

TJ = +125°C

1.00.7

+25°C

–55°C

IC, Collector Current (mA)

Figure 15. DC Current Gain

VCE = 1.0 V

70

30205.0 7.0

Any changing of specification will not be informed individual

100

200

10

Page 5 of 6

V , Collector Emitter Voltage (V)

CE

Elektronische Bauelemente

1.0

0.8

0.6

0.4

0.2

IC = 1.0 mA

MMBT3904W

NPN Silicon

General Purpose Transistor

TJ = 25°C

10 mA 30 mA 100 mA

0

1.2 TJ = 25°C

1.0

0.8

0.6

V, Voltage (V)

0.4

0.2

1.0 2.0 5.0 10 20

IC, Collector Current (mA)

Figure 17. “ON” Voltages

V

CE(sat)

0.070.050.030.020.01

0.1

IB, Base Current (mA)

0.5 2.0 3.0 100.2 0.3

Figure 16. Collector Saturation Region

1.0

V

@ IC/IB =10

BE(sat)

VBE @ VCE =1.0 V

@ IC/IB =10

500100

200

0.5

°

0

– 0.5

Coefficient (mV/ C)

– 1.0

– 1.5

– 2.0

1.00.7 5.0 7.0

+25°C TO +125°C

q

FOR V

VC

qVB FOR V

0 60 80 120 140 160

20 40

CE(sat)

–55°C TO +25°C

+25°C TO +125°C

BE(sat)

100

IC, Collector Current (mA)

Figure 18. T emperature Coefficients

180

200

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01-Jun-2007 Rev. B

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Page 6 of 6