Datasheet MMBT3904LT1, MMBT3904LT3 Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA

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NPN Silicon

BASE

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation

Alumina Substrate,

Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature TJ, T

(2)

TA = 25°C

(1)

DEVICE MARKING

MMBT3904LT1 = 1AM

CEO
CBO
EBO

P

R

P

R

C

D

q

JA
D

q

JA

stg

40 Vdc
60 Vdc

6.0 Vdc

200 mAdc

225

1.8
556 °C/W
300

2.4
417 °C/W

–55 to +150 °C

1

COLLECTOR

3

2

EMITTER

mW

mW/°C

mW

mW/°C



Motorola Preferred Device

3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (3)

(IC = 1.0 mAdc, IB = 0)

Collector–Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Thermal Clad is a registered trademark of the Berquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

BL

I

CEX

40 — Vdc

60 — Vdc

6.0 — Vdc

— 50 nAdc

— 50 nAdc

1

MMBT3904LT1

(

CC

,

BE

,

ns

(

CC

,

ns

ELECTRICAL CHARACTERISTICS (T

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)

Collector–Emitter Saturation Voltage (3)

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

Base–Emitter Saturation Voltage (3)

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

(3)

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Max Unit

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Small–Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Output Admittance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)

Noise Figure

(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Delay Time
Rise Time
Storage Time
Fall Time

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

(VCC = 3.0 Vdc, VBE = –0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)

(VCC = 3.0 Vdc,

IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)

H

FE

V

CE(sat)

V

BE(sat)

f

T

C

obo

C

ibo

h

ie

h

re

h

fe

h

oe

NF — 5.0 dB

t

d

t

r

t

s

t

f

40
70

100

60
30

—
—

0.65
—

300 — MHz

— 4.0 pF

— 8.0 pF

1.0 10 k ohms

0.5 8.0 X 10

100 400 —

1.0 40

— 35
— 35
— 200
— 50

—
—

300

—
—

0.2

0.3

0.85

0.95

Vdc

Vdc

m

mhos

—

–4

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

DUTY CYCLE = 2%

300 ns

+10.9 V

+3 V

275

10 < t1 < 500
DUTY CYCLE = 2%

m

s

MMBT3904LT1

t

1

+10.9 V

+3 V

275

–0.5 V

10

7.0

5.0

3.0

CAPACITANCE (pF)

2.0

1.0

0.1

10 k

< 1 ns

Figure 1. Delay and Rise Time

Equivalent T est Circuit

C

ibo

C

obo

0.2 0.3 0.5 0.7

1.0 2.0 3.0 5.0 7.0 10 20

REVERSE BIAS VOL TAGE (VOLTS)

0

CS < 4 pF*

′

–9.1 V

* T otal shunt capacitance of test jig and connectors

< 1 ns

Figure 2. Storage and Fall Time

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C
TJ = 125

°

C

5000

VCC = 40 V

3000

IC/IB = 10

2000

1000

700
500

300

Q, CHARGE (pC)

200

100

70

30 40

50

1.0

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)

10 k

1N916

Equivalent T est Circuit

Q

T

CS < 4 pF*

Q

A

Figure 3. Capacitance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 4. Charge Data

3

MMBT3904LT1

500
300

200

IC/IB = 10

500
300

200

VCC = 40 V
IC/IB = 10

100

70
50

30

TIME (ns)

20

10

7

1.0 2.0 3.0 10 20

5.0 7.0 30 50

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time

500
300

IC/IB = 20

200

100

70
50

30
20

′

s

t , STORAGE TIME (ns)

10

7

1.0 2.0 3.0 10 20

IC/IB = 10

5.0 7.0

IC, COLLECTOR CURRENT (mA)

td @ VOB = 0 V

30 50

tr @ VCC = 3.0 V

40 V

15 V

2.0 V

705100

t

′s = ts – 1/8 t

IB1 = I

B2

IC/IB = 20

IC/IB = 10

705100

200

f

200

100

70
50

30

r

20

t , RISE TIME (ns)

10

7

1.0 2.0 3.0 10 20

5.0 7.0

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise Time

500
300

200

100

70
50

30

f

t , FALL TIME (ns)

20

10

7

1.0 2.0 3.0 10 20

IC/IB = 10

5.0 7.0

IC, COLLECTOR CURRENT (mA)

IC/IB = 20

30 50

30 50

705100

VCC = 40 V
IB1 = I

B2

705100

200

200

12

10

8

6

4

NF, NOISE FIGURE (dB)

2

0

SOURCE RESIST ANCE = 200
IC = 1.0 mA

SOURCE RESIST ANCE = 500
IC = 100 mA

0.2 0.4

0.1

Figure 7. Storage Time

TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

W

SOURCE RESIST ANCE = 200
IC = 0.5 mA

SOURCE RESISTANCE = 1.0 k
IC = 50

m

A

W

1.0 2.0 4.0 10 20
f, FREQUENCY (kHz)

Figure 9.

NOISE FIGURE V ARIATIONS

14

12

W

40

100

10

8

6

NF, NOISE FIGURE (dB)

4

2

0

Figure 8. Fall Time

f = 1.0 kHz

0.1 1.0 2.0 4.0 10 20

0.2 0.4

IC = 1.0 mA

IC = 0.5 mA

IC = 100 mA

RS, SOURCE RESISTANCE (k OHMS)

Figure 10.

IC = 50 mA

40

100

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

h PARAMETERS

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

MMBT3904LT1

300

200

100

70

fe

h , CURRENT GAIN

50

30

0.1 0.2 1.0 2.0

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

20

10

5.0

2.0

5.0 10

100

50

m

20

10

5

oe

h , OUTPUT ADMITTANCE ( mhos)

2

1

0.1 0.2 1.0 2.0

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

Figure 12. Output Admittance

10

–4

7.0

5.0

3.0

2.0

5.0 10

1.0

ie

0.5

h , INPUT IMPEDANCE (k OHMS)

0.2

0.1 0.2 1.0 2.0

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance

2.0

1.0

0.7

0.5

0.3

0.2

FE

h , DC CURRENT GAIN (NORMALIZED)

0.1

0.1

0.2 0.3

0.5 2.0 3.0 10 50

1.0

0.7

re

h , VOLTAGE FEEDBACK RATIO (X 10 )

5.0 10

0.5

0.1 0.2 1.0 2.0

Figure 14. V oltage Feedback Ratio

TYPICAL STATIC CHARACTERISTICS

TJ = +125°C

+25°C

–55°C

1.00.7
IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

0.3 0.5 3.0
IC, COLLECTOR CURRENT (mA)

VCE = 1.0 V

70

30205.0 7.0

100

5.0

10

200

Motorola Small–Signal Transistors, FETs and Diodes Device Data

5

MMBT3904LT1

1.0

0.8

0.6

0.4

0.2

CE

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0

IC = 1.0 mA

10 mA 30 mA 100 mA

0.070.050.030.020.01

0.1
IB, BASE CURRENT (mA)

0.5 2.0 3.0 100.2 0.3

1.00.7 5.0 7.0

Figure 16. Collector Saturation Region

TJ = 25°C

1.2
TJ = 25°C

1.0

0.8

0.6

0.4

V, VOLTAGE (VOLTS)

0.2

1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)

Figure 17. “ON” Voltages

V

CE(sat)

V

@ IC/IB =10

BE(sat)

VBE @ VCE =1.0 V

@ IC/IB =10

500100

200

1.0

0.5

q

FOR V

°

0

–0.5

–1.0

COEFFICIENT (mV/ C)

–1.5

–2.0

0 60 80 120 140 160

20 40

VC

qVB FOR V

CE(sat)

BE(sat)

100

IC, COLLECTOR CURRENT (mA)

Figure 18. T emperature Coefficients

+25°C TO +125°C

–55°C TO +25°C

–55°C TO +25°C

+25°C TO +125°C

180

200

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT3904LT1

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection

0.037

0.95

0.035

0.9

SOT–23 POWER DISSIP ATION

The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T
die, R
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.

The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.

, the maximum rated junction temperature of the

J(max)

, the thermal resistance from the device junction to

θJA

PD =

T

PD =

150°C – 25°C

556°C/W

J(max)

R

θJA

– T

A

= 225 milliwatts

0.031

0.8

SOT–23

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

0.037

0.95

0.079

2.0

inches

mm

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

7

MMBT3904LT1

P ACKAGE DIMENSIONS

A

L

3

S

1

B

2

GV

C

D

H

K

J

CASE 318–08

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.

INCHES

DIMAMIN MAX MIN MAX

0.1102 0.1197 2.80 3.04

B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0180 0.0236 0.45 0.60
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.0984 2.10 2.50
V 0.0177 0.0236 0.45 0.60

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

MILLIMETERS

ISSUE AE

SOT–23 (TO–236AB)

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT3904LT1/D

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