Page 1
NPN General Purpose Transistor
1/5
http://www.weitron.com.tw
The MMBT3904E device is a spin-off of our popular
SOT-23/SOT-323/SOT-563/SOT-963 three-leaded device.
It is designed for general purpose amplifier applications
and is housed in the SOT-1123 surface mount package.
This device is ideal for low-power surface mount applications
where board space is at a premium.
MMBT3904E
3
2
1
1
SOT-1123
COLLECTOR
3
FEATURES :
• h 100-300
FE
• Low V
CE(sat)
≤ 0.4V
• Reduces Board Space
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation
Derate above 25 °C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Derate above 25 °C
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Lead3
Junction and Storage Temperature Range
1.100mm 1 oz, copper traces.
2.500mm 1 oz, copper traces.
2
2
(1)
Ta=25 °C
(2)
Ta=25 °C
(2)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Symbol Max
P
D
R
JA
θ
P
D
R
JA
θ
R
JL
Ψ
T
J,Tstg
Value
40
60
6.0
600
290
2.3
432
347
2.8
360
143
-55 to +150
1
BASE
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/ °C
°C/W
mW
mW/ °C
°C/W
°C/W
°C
Device Marking
MMBT3904E=2
Electrical Characteristics
Characteristics Symbol
(Ta=25 °C Unless Otherwise noted)
Off Characteristics
(3)
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage (IC=10μAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=10μAdc, IC=0)
Collector Cutoff Current (VCE=30Vdc, VEB=3.0Vdc)
WEITRON
(IC=1.0mAdc.IB=0)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
Min Max
40
60
6.0
-
-
-
-
50
Unit
Vdc
Vdc
Vdc
nAdc
3-Aug-2012
Page 2
MMBT3904E
Electrical Characteristics (T
Characteristics
On Characteristics
DC Current Gain
(IC= 0.1 mAdc, VCE=1.0Vdc)
(IC= 1.0 mAdc, VCE= 1.0 Vdc)
(IC= 10 mAdc, VCE= 1.0Vdc)
(IC= 50 mAdc, VCE= 1.0Vdc)
(IC= 100 mAdc, VCE= 1.0Vdc)
Collector-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0mAdc)
(IC= 50 mAdc, IB= 5.0mAdc)
Base-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 1.0 mAdc)
(IC= 50 mAdc, IB= 5.0 mAdc)
(3)
Small-signal Characteristics
=25 °C unless otherwise noted)
a
Symbol
h
FE
V
CE(sat)
V
BE(sat)
Min
40
70
100
60
30
-
-
0.65
-
Max
-
-
300
-
-
0.2
0.3
0.85
1.0
Unit
-
Vdc
Vdc
Current-Gain-Bandwidth Product
(IC= 10 mAdc, VCE= 20 Vdc, f=100MHz)
Output Capacitance
(VCB= 5.0 Vdc, IE=0, f=1.0MHz)
Input Capacitance
(VEB= 0.5 Vdc, IC=0, f=1.0MHz)
Noise Figure
(V R
= 5.0 Vdc, I = 1.0 kΩ
CE
=100 µAdc, , f=1.0 kHz)
C
S
Switching Characteristics
Delay Time
Rise Time
Storage Time
Fall Time
3.Pulse Test:Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
(Vcc= 3.0 Vdc, VBE= -0.5 Vdc
Ic= 10 mAdc, I
(Vcc= 3.0Vdc, Ic= 10 mAdc
B1=I I B2= 1.0 mAdc)
B1= 1.0 mAdc)
C
C
f
T
obo
ibo
NF
td
tr
ts
tf
200
-
-
1.0
-
-
-
-
-
4.0
8.0
5.0
35
35
275
50
MHz
pF
pF
dB
ns
ns
WEITRON
http://www.weitron.com.tw
3-Aug-2012
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Page 3
MMBT3904E
0.28
IC/IB = 10
0.23
0.18
0.13
, COLLECTOR−EMITTER
0.08
SATURATION VOLTAGE (V)
CE(sat)
V
0.03
0.0001 1
, COLLECTOR CURRENT (A)
I
C
V
CE(sat)
25°C
= 150°C
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
0.10.010.001
−55°C
400
150°C (5.0 V)
350
150°C (1.0 V)
300
250
25°C (5.0 V)
200
25°C (1.0 V)
150
−55°C (5.0 V)
−55°C (1.0 V)
, DC CURRENT GAIN (V)
100
FE
h
50
0
0.0001 0.01 1
0.001
IC, COLLECTOR CURRENT (A)
0.1
Figure 2. DC Current Gain vs. Collector Current
WEITRON
http://www.weitron.com.tw
3-Aug-2012
3/5
Page 4
MMBT3904E
1.1
1.0
0.9
0.8
0.7
, BASE−EMITTER
0.6
0.5
BE(sat)
V
SATURATION VOLTAGE (V)
0.4
0.3
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
, COLLECTOR−EMITTER
0.4
SATURATION VOLTAGE (V)
CE(sat)
V
0.2
0
IC/IB = 10
−55°C
25°C
150°C
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
IC = 100 mA
80 mA
60 mA
40 mA
20 mA
Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V)
Figure 5. Saturation Region Figure 6. Input Capacitance
0.010.0010.0001
10.10.010.0010.0001
1.1
1.0
0.9
0.8
0.7
0.6
VOLTAGE (V)
0.5
, BASE−EMITTER TURN−ON
0.4
BE(on)
V
0.3
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
, INPUT CAPACITANCE (pF)
ibo
C
4.0
3.5
VCE = 2.0 V
−55°C
25°C
150°C
Figure 4. Base Emitter Turn−On Voltage vs.
Collector Current
C
ib
3.0 3.5 5.0
10.10.010.0010.0001
4.54.02.51.5 2.01.00.50
WEITRON
http://www.weitron.com.tw
3.0
2.5
2.0
1.5
1.0
, OUTPUT CAPACITANCE (pF)
obo
C
0.5
C
ob
Vcb, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
4/5
30252015105.00
3-Aug-2012
Page 5
MMBT3904E
SOT-1123 Package Outline Dimensions
b1
D
−X−
−Y−
1
3
2
e
E
b
0.08 (0.0032)
XY
A
c
H
E
L
SOLDERING FOOTPRINT*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
DIM MIN NOM MAX
b1 0.10 0.15 0.20 0.004 0.006 0.008
H
MILLIMETERS
A 0.34 0.37 0.40
b 0.15 0.20 0.25
c 0.07 0.12 0.17
D 0.75 0.80 0.85
E 0.55 0.60 0.65
e 0.35 0.014
0.95 1.00 1.05
E
L 0.05 0.10 0.15
INCHES
MIN NOM MAX
0.013 0.015 0.016
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.002 0.004 0.006
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.35
0.30
WEITRON
http://www.weitron.com.tw
0.25
0.90
0.40
DIMENSIONS: MILLIMETERS
3-Aug-2012
5/5
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