Datasheet MMBT3416LT3 Datasheet (Motorola)

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SEMICONDUCTOR TECHNICAL DATA

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MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR–5 Board

TA = 25°C

Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation

Alumina Substrate,

Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature TJ, T

(2)

TA = 25°C

(1)

DEVICE MARKING

MMBT3416LT3 = GP

CEO
EBO

P

R

P

R

C

D

q

JA
D

q

JA

stg

40 Vdc

4.0 Vdc

100 mAdc

225

1.8
556 °C/W
300

2.4
417 °C/W

–55 to +150 °C

1

BASE

COLLECTOR

3

2

EMITTER

mW

mW/°C

mW

mW/°C



3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

Emitter–Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

Collector Cutoff Current

(VCB = 25 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

1. FR–5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1998

Symbol Min Max Unit

V

(BR)CEO

V

(BR)EBO

I

CBO1

I

EBO

40 — Vdc

4.0 — Vdc

— 100 nAdc

— 100 nAdc

1

MMBT3416LT3

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 2.0 mAdc, VCE = 4.5 Vdc)

Collector–Emitter Saturation Voltage

(IC = 50 mAdc, IB = 3.0 mAdc)

Base–Emitter Saturation Voltage

(IC = 50 mAdc, IB = 3.0 mAdc)

SMALL–SIGNAL CHARACTERISTICS

Collector Cutoff Current

(VCB = 18 Vdc, TA = 100°C)

Small–Signal Current Gain

(IC = 2.0 mAdc, VCE = 4.0 Vdc, f = 1 kHz)

= 25°C unless otherwise noted) (Continued)

A

h

FE

V

CE(sat)

V

BE(sat)

I

CBO2

h

FE

75 225 —

— 0.3 Vdc

0.6 1.3 Vdc

— 15 µAdc

75 — —

DUTY CYCLE = 2%

300 ns

–0.5 V

<1.0 ns

EQUIVALENT SWITCHING TIME TEST CIRCUITS

+10.9 V

+3.0 V

275

10 k

CS < 4.0 pF*

*Total shunt capacitance of test jig and connectors

10 < t1 < 500 µs

DUTY CYCLE = 2%

Figure 1. T urn–On Time Figure 2. T urn–Off Time

0

–9.1 V

t

1

+10.9 V

10 k

<1.0 ns

1N916

+3.0 V

275

CS < 4.0 pF*

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

MMBT3416LT3

20

IC = 1.0 mA

10

7.0

5.0

, NOISE VOLTAGE (nV)

n

e

10 µA

3.0

2.0
10 20 50 100 200 500 1 k 2 k 5 k 10 k

300 µA

100 µA

30 µA

f, FREQUENCY (Hz)

BANDWIDTH = 1.0 Hz

RS = 0

Figure 3. Noise V oltage

NOISE FIGURE CONTOURS

(VCE = 5.0 Vdc, TA = 25°C)

500 k
200 k
100 k

50 k
20 k

10 k

5k
2k

1k

500

, SOURCE RESISTANCE (OHMS)

S

R

200
100

50

10

2.0 dB

3.0 dB

4.0 dB

20 30 50 70 100 200 300 500 700 1 k 10 20 30 50 70 100 200 300 500 700 1 k

IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz

6.0 dB

10 dB

100

BANDWIDTH = 1.0 Hz

RS

100 µA

, NOISE CURRENT (pA)

n

I

50
20

10

5.0

2.0

1.0

0.5

0.2

0.1

IC = 1.0 mA

300 µA

30 µA

10 µA

10 20 50 100 200 500 1 k 2 k 5 k 10 k

f, FREQUENCY (Hz)

Figure 4. Noise Current

1M

500 k
200 k

100 k

50 k
20 k

10 k

5k
2k

1k

, SOURCE RESISTANCE (OHMS)

S

500

R

200
100

1.0 dB

IC, COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz

2.0 dB

3.0 dB

≈∞

5.0 dB

8.0 dB

Figure 5. Narrow Band, 100 Hz

500 k
200 k
100 k

50 k
20 k

10 k

5k
2k

1k

500

, SOURCE RESISTANCE (OHMS)

S

200

R

100

50

10

1.0 dB

20 30 50 70 100 200 300 500 700 1 k

IC, COLLECTOR CURRENT (µA)

10 Hz to 15.7 kHz

2.0 dB

3.0 dB

5.0 dB

8.0 dB

Figure 7. Wideband

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 6. Narrow Band, 1.0 kHz

Noise Figure is defined as:

2

2

–23

R

S

j/°K)

Ǔ

1ń2

2

e

)

NF+20 log
e

= Noise Voltage of the Transistor referred to the input. (Figure 3)

n

I

= Noise Current of the Transistor referred to the input. (Figure 4)

n

K

= Boltzman’s Constant (1.38 x 10

T

= Temperature of the Source Resistance (°K)

R

= Source Resistance (Ohms)

S

10

ǒ

4KTRS)

n

4KTR

I

n

S

3

MMBT3416LT3

TYPICAL STATIC CHARACTERISTICS

, COLLECTOR–EMITTER VOL TAGE (VOLTS)

CE

V

400

200

100

80

FE

h , DC CURRENT GAIN

60

40

0.004

0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (mA)

TJ = 125°C

25°C

–55°C

2.0

MPS390

VCE = 1.0 V

4

VCE = 10 V

3.0

5.0 7.0 10 20 30 50 70 100

Figure 8. DC Current Gain

1.0

0.8

0.6

0.4

0.2

0

0.002

IC = 1.0 mA 10 mA 100 mA

0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5.0 10 15 20 25 30 35 40
IB, BASE CURRENT (mA)

50 mA

MPS3904
TJ = 25

°

C

100

PULSE WIDTH = 300

DUTY CYCLE

80

60

40

, COLLECTOR CURRENT (mA)

20

C

I

0

0

TA = 25°C

VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)

≤

2.0%

µ

s

IB = 500 µA

400 µA

300 µA

200 µA

100 µA

1.4
TJ = 25°C

1.2

1.0

0.8

0.6

V, VOLTAGE (VOLTS)

0.4

0.2

0

0.1 0.2 0.5

Figure 9. Collector Saturation Region

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 1.0 V

BE(on)

V

@ IC/IB = 10

CE(sat)

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

50

100

1.6

°θ

0.8

0

–0.8

–1.6

, TEMPERATURE COEFFICIENTS (mV/ C)

V

–2.4

0.1 0.2 0.5

Figure 10. Collector Characteristics

*APPLIES for IC/IB ≤ hFE/2

25°C to 125°C

*

qVC for V

CE(sat)

–55°C to 25°C

25°C to 125°C

q

for V

VB

BE

1.0 2.0 5.0 10 20

IC, COLLECTOR CURRENT (mA)

–55°C to 25°C

Figure 12. T emperature Coefficients

50

100

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL DYNAMIC CHARACTERISTICS

MMBT3416LT3

300
200

100

t, TIME (ns)

500

300

200

70
50

30
20

10

7.0

5.0

3.0

td @ V

3.01.0

2.0 5.0 10
IC, COLLECTOR CURRENT (mA)

Figure 13. Turn–On Time

TJ = 25°C
f = 100 MHz

= 0.5 Vdc

BE(off)

7.0

VCE = 20 V

5.0 V

t

r

VCC = 3.0 V
IC/IB = 10
TJ = 25

20 30 50

°

C

70 100

1000

700
500

300
200

100

t, TIME (ns)

70
50

30
20

10

10

7.0

5.0

3.0

t

s

t

f

VCC = 3.0 V
IC/IB = 10
IB1 = I

B2

TJ = 25

°

C

2.0 5.0 10

3.01.0 7.0
IC, COLLECTOR CURRENT (mA)

Figure 14. T urn–Off Time

C

ib

C

ob

20 30 50

TJ = 25°C
f = 1.0 MHz

70 100

100

70

50

T

f , CURRENT–GAIN BANDWIDTH PRODUCT (MHz)

0.5

0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)

Figure 15. Current–Gain — Bandwidth Product

20

10

Ω

7.0

5.0

3.0

2.0

1.0

, INPUT IMPEDANCE (k )

0.7

ie

h

0.5

0.3

0.2

0.1 0.2 0.5

MPS3904
hfe

≈

200 @ IC = 1.0 mA

2.0 5.0 10

1.0

IC, COLLECTOR CURRENT (mA)

VCE = 10 Vdc
f = 1.0 kHz
TA = 25

°

C

20 50

100

2.0

C, CAPACITANCE (pF)

1.0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 500.05

200

VCE = 10 Vdc
f = 1.0 kHz

100

TA = 25

70

m

50
30

20

10

7.0

5.0

oe

h , OUTPUT ADMITTANCE ( mhos)

3.0

2.0

0.1 0.2 0.5

VR, REVERSE VOLTAGE (VOLTS)

Figure 16. Capacitance

°

C

MPS3904
hfe

≈

200 @ IC = 1.0 mA

2.0 5.0 10

1.0

IC, COLLECTOR CURRENT (mA)

20 50

100

Figure 17. Input Impedance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 18. Output Admittance

5

MMBT3416LT3

1.0

0.7

0.5

D = 0.5

0.3

0.2

0.1

0.07

0.05

(NORMALIZED)

0.03

0.02

r(t) TRANSIENT THERMAL RESIST ANCE

0.01

0.01

4

10

VCC = 30 Vdc

3

10

2

10

1

10

0

10

, COLLECTOR CURRENT (nA)

C

–1

I

10

–2

10

–200 +20 +40 +60 + 80 +100 + 120 + 140 +160

–4

0

0.2

0.1

0.05

0.02

0.01

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k

SINGLE PULSE

t, TIME (ms)

P

(pk)

FIGURE 19A

t

1

t

2

DUTY CYCLE, D = t1/t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
Z

θ

T

J(pk)

JA(t)

•

= r(t)

– TA = P

R
(pk)

θ

JA

Z

Figure 19. Thermal Response

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model

as shown in Figure 19A. Using the model and the device thermal

I

CEO

I

I

@ V

CEX

BE(off)

TJ, JUNCTION TEMPERATURE (°C)

CBO
AND

= 3.0 Vdc

response the normalized effective transient thermal resistance of
Figure 19 was calculated for various duty cycles.

To find Z

steady state value R
Example:

The MPS3904 is dissipating 2.0 watts peak under the following
conditions:

t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.

The peak rise in junction temperature is therefore

∆T = r(t) x P
For more information, see AN–569.

, multiply the value obtained from Figure 19 by the

θJA(t)

(pk)

.

θJA

x R

= 0.22 x 2.0 x 200 = 88°C.

θJA

Figure 19A.

θ

2

JA(t)

50 k

100 k

400
200

100

, COLLECTOR CURRENT (mA)

C

I

6.0

4.0

6

60
40

20

10

2.0

100 µs

1.0 ms
10 µs

TC = 25°C

TA = 25°C

dc

TJ = 150°C

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

4.0 6.0 8.0 10 20

VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)

1.0 s

dc

Figure 20.

The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.

40

The data of Figure 20 is based upon T
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided T
the data in Figure 19. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.

J(pk)

≤ 150°C. T

= 150°C; TC or TA is

J(pk)

may be calculated from

J(pk)

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT3416LT3

INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection

0.037

0.95

0.035

0.9

SOT–23 POWER DISSIP ATION

The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by T
die, R
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT–23 package,
PD can be calculated as follows:

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.

The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.

, the maximum rated junction temperature of the

J(max)

, the thermal resistance from the device junction to

θJA

PD =

T

PD =

150°C – 25°C

556°C/W

J(max)

R

θJA

– T

A

= 225 milliwatts

0.031

0.8

SOT–23

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

0.037

0.95

0.079

2.0

inches

mm

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied during

cooling.

* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

7

MMBT3416LT3

P ACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

A

L

3

1

2

S

B

GV

C

D

H

K

J

CASE 318–08

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.

INCHES

DIMAMIN MAX MIN MAX

0.1102 0.1197 2.80 3.04

B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11

D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60

STYLE 6:

PIN 1. BASE

MILLIMETERS

2. EMITTER

3. COLLECTOR

ISSUE AF

SOT–23 (TO–236AB)

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
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Opportunity/Affirmative Action Employer.

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

Mfax is a trademark of Motorola, Inc.

MMBT3416L T3/D