Page 1
r
r
MMBT2907FW
K E
F
(BR)CEO
(BR)CBO
(BR)EBO
V
V
PNP Silicon
SOT-523
A
L
3
Top View
1
C B
2
1
D
G
REF.
Millimeter Millimete
Min. Max.
A 1.50 1.70 G 0.00 0.15
B 1.45 1.75 H 0.28 0.40
C 0.75 0.85 J 0.10 0.20
D 0.70 0.90 K - E 0.90 1.10 L 0.75 0.85
F 0.25 0.33
H J
REF.
Min. Max.
mAdc
-60
-60
- -10 nAdc
CBO
- -10 nAdc
EBO
h
FE
-5
- Vdc
- Vdc
- Vdc
50
CE(sat)
BE(sat)
5.0 pF
oBO
T
r
100 nS
oFF
30 nS
T
F
-1.6 Vdc
-2.6 Vdc
10 nS
40 nS
3
2
Elektronische Bauelemente
General Purpose Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Epitaxial Planar Die Construction
Complementary NPN Type Available(MMBT2222FW)
Collector
Ideal for Medium Power Amplification and Switching
MARKING CODE
MMBT2907FW = 2F
Base
MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Collector - Emitter Voltage V
Collector - Base Voltage V
Emitter - Base Voltage V
Collector Current - Continuous IC -600
Total Device Dissapation FR-5 Board
TA=25℃
Thermal Resistance, Junction to Ambient R
Junction & Storage Temperature TJ, T
ELECTRICAL CHARACTERISTICS (at T
PARAMETER TEST CONDITIONS SYMBOL MIN. MAX. UNIT
Collector-Emitter Breakdown Voltage IC = -10mAdc, IB = 0
Collector-Base Breakdown Voltage IC = -10 µAdc, IE = 0 V
Emitter-Base Breakdown Voltage IE = -10 µAdc, IC = 0 V
Collector Cut-Off Current VCB =-50 Vdc, IE = 0 I
Emitter Cut-Off Current VEB = -4 Vdc, IC = 0 I
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Curren-Gain-Bandwidth Product
Output capacitance VCB = -12 Vdc, IE = 0, f=1MHz C
Turn-On Time Ton 45 nS
Delay Time Td
Rise Time
Turn-Out Time T
Storage Time TS 80 nS
Fall Time
(at T
= 25°C unless otherwise specified)
a
(1)
a
IC =-0.1mAdc, VCE = -10 Vdc 75
IC =-1.0mAdc, VCE = -10 Vdc 100
IC =-10mAdc, VCE = -10 Vdc 100
IC =-150mAdc, VCE = -10 Vdc 100 300
=-500mAdc, VCE = -10 Vdc
I
C
IC =-150mAdc, IB = -15 mAdc - -0.4 Vdc
=-500mAdc, IB = -50 mAdc
I
C
IC =-150mAdc, IB = -15 mAdc -1.3 Vdc
I
=-500mAdc, IB = -50 mAdc
C
SMALL SIGNAL CHARACTERISTICS
= -12Vdc, IC=-2.0mAdc,f=30MHz FT 140 MHz
V
CE
SWITCHING CHARACTERISTICS
= -30 Vdc, IC = -150 mAdc,
V
CC
I
= -15 mAdc
B1
=-60 Vdc, IC = -150mAdc,
V
CC
I
= IB2 =-15 mAdc
B1
-60 Vdc
CEO
-60 Vdc
CBO
-5.0 Vdc
EBO
P
150 mW
D
833 ℃ / W
θJA
-55 ~ +150 ℃
STG
= 25°C unless otherwise specified)
OFF CHARACTERISTICS
(2)
V
ON CHARACTERISTICS
Emitte
Note:1.FR-5=1.0x0.75x0.062 in
2.Pulse Test: Pulse Width=300μ S, Duty Cycle≦ 2.0%
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Oct-2009 Rev. B Page 1 of 3
Page 2
Elektronische Bauelemente
CHARACTERISTIC CURVES
MMBT2907FW
General Purpose Transistor
PNP Silicon
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Oct-2009 Rev. B Page 2 of 3
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
MMBT2907FW
General Purpose Transistor
PNP Silicon
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
20-Oct-2009 Rev. B Page 3 of 3
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