Datasheet mmbt2907alt1-d Datasheet

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Page 1

MMBT2907ALT1G

General Purpose Transistors

PNP Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

Collector Current − Peak (Note 3) I

CEO

CBO

EBO

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR− 5 Board

(Note 1) @T Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation Alumina

Substrate, (Note 2) @T Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. FR− 5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

= 25°C



stg

−60 Vdc

−5.0 Vdc

−600 mAdc

−1200 mAdc

225

1.8

556 °C/W

300

2.4

417 °C/W

−55 to +150 °C

mW/°C

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COLLECTOR

BASE

EMITTER

SOT−23 (TO−236AB)

CASE 318

STYLE 6

MARKING DIAGRAM

2F M G

2F = Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

January, 2011 − Rev. 11

ORDERING INFORMATION

Device Package Shipping

MMBT2907ALT1G SOT−23

(Pb−Free)

MMBT2907ALT3G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

1 Publication Order Number:

3000 Tape & Reel

10,000 Tape & Reel

MMBT2907ALT1/D

†

Page 2

MMBT2907ALT1G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 4)

= −1.0 mAdc, IB = 0)

= −10 mAdc, IB = 0)

Collector−Base Breakdown Voltage (IC = −10 Adc, IE = 0)

Emitter−Base Breakdown Voltage (IE = −10 Adc, IC = 0)

Collector Cutoff Current (VCE = −30 Vdc, V

= −0.5 Vdc) I

EB(off)

Collector Cutoff Current (V

= −50 Vdc, IE = 0)

= −50 Vdc, IE = 0, TA = 125°C)

Base Cutoff Current (VCE = −30 Vdc, V

= −0.5 Vdc) I

EB(off)

ON CHARACTERISTICS

DC Current Gain

= −0.1 mAdc, VCE = −10 Vdc)

= −1.0 mAdc, VCE = −10 Vdc)

= −10 mAdc, VCE = −10 Vdc)

= −150 mAdc, VCE = −10 Vdc)

= −500 mAdc, VCE = −10 Vdc) (Note 4)

Collector−Emitter Saturation Voltage (Note 4)

= −150 mAdc, IB = −15 mAdc) (Note 4)

= −500 mAdc, IB = −50 mAdc)

Base−Emitter Saturation Voltage (Note 4)

= −150 mAdc, IB = −15 mAdc)

= −500 mAdc, IB = −50 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Notes 4, 5),

= −50 mAdc, VCE = −20 Vdc, f = 100 MHz)

Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) C

Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) C

SWITCHING CHARACTERISTICS

Turn−On Time

Delay Time t

(VCC = −30 Vdc, IC = −150 mAdc,

= −15 mAdc)

Rise Time t

Turn−Off Time

(VCC = −6.0 Vdc, IC = −150 mAdc,

= −6.0 Vdc, IC = −150 mAdc,

Storage Time t

Fall Time t

= IB2 = −15 mAdc)

4. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. is defined as the frequency at which |hfe| extrapolates to unity.

5. f

(BR)CEO

(BR)CBO

(BR)EBO

CEX

CBO

CE(sat)

BE(sat)

obo

ibo

off

−60

−

−60 − Vdc

−5.0 − Vdc

− −50 nAdc

Adc

Vdc

−

−0.010

−10

− −50 nAdc

−

75 100 100 100

−

300

−

Vdc

−

−0.4

−1.6

Vdc

−

200 − MHz

− 8.0

−1.3

−2.6

− 30

− 45

− 10

− 40

− 100

− 80

− 30

INPUT Z

= 50 

PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns

-16 V

200 ns

-30 V

200

1.0 k TO OSCILLOSCOPE

RISE TIME ≤ 5.0 ns

INPUT Z

= 50 

PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns

-30 V

200 ns

+15 V -6.0 V

1.0 k

1.0 k 37

TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns

1N916

Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit

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Page 3

MMBT2907ALT1G

TYPICAL CHARACTERISTICS

1000

, DC CURRENT GAIN

100

-1.0

-0.8

-0.6

1.0

TJ = 150°C

25°C

-55°C

IC = -1.0 mA

10 100 1000

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

-10 mA

-100 mA

-500 mA

VCE = 10 V

-0.4

-0.2

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

-0.005

-0.01

-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0

Figure 4. Collector Saturation Region

300 200

100

VCC = -30 V I

C/IB

t, TIME (ns)

td @ V

BE(off)

= 0 V

7.0

5.0

3.0

-5.0

-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT

Figure 5. Turn−On Time

= 10

= 25°C

2.0 V

IB, BASE CURRENT (mA)

500

300

200

100

70 50

t, TIME (ns)

7.0

5.0

-5.0

-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500

-3.0

-2.0

t′s = ts - 1/8 t

-5.0 -7.0 -10 -20

IC, COLLECTOR CURRENT (mA)

Figure 6. Turn−Off Time

-30

VCC = -30 V I

= 10

C/IB

= I

TJ = 25°C

-50

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Page 4

MMBT2907ALT1G

TYPICAL SMALL−SIGNAL Characteristics

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

8.0

6.0

4.0

NF, NOISE FIGURE (dB)

2.0

0.01

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

IC = -1.0 mA, Rs = 430 

-500 A, R

-50 A, R

-100 A, R

= 560 

= 2.7 k

= 1.6 k

Rs = OPTIMUM SOURCE RESISTANCE

f, FREQUENCY (kHz)

Figure 7. Frequency Effects

7.0

5.0

C, CAPACITANCE (pF)

3.0

f = 1.0 kHz

8.0

6.0

4.0

NF, NOISE FIGURE (dB)

2.0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

IC = -50 A

-100 A

-500 A

-1.0 mA

Rs, SOURCE RESISTANCE (OHMS)

Figure 8. Source Resistance Effects

400

300

200

100

VCE = -20 V T

= 25°C

2.0

-0.1

-0.2

-0.3

-1.0 -2.0 -3.0 -5.0 -10 -20 -30

-0.5

REVERSE VOLTAGE (VOLTS)

Figure 9. Capacitances

IC/IB = 10

25°C

0.1

, COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

CE(sat)

0.01

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 11. Collector Emitter Saturation Voltage

vs. Collector Current

150°C

−55°C

, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000

IC, COLLECTOR CURRENT (mA)

Figure 10. Current−Gain − Bandwidth Product

1.1

1.0

IC/IB = 10

, BASE−EMITTER

10.10.010.001

BE(sat)

SATURATION VOLTAGE (V)

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

−55°C

25°C

150°C

Figure 12. Base Emitter Saturation Voltage vs.

Collector Current

10.10.010.001

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Page 5

MMBT2907ALT1G

TYPICAL SMALL−SIGNAL Characteristics

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

, BASE−EMITTER VOLTAGE (V)

0.4

0.3

BE(on)

0.2

VCE = 1 V

−55°C

25°C

150°C

IC, COLLECTOR CURRENT (A)

Figure 13. Base Emitter Voltage vs. Collector

Current

Thermal Limit

+0.5

-0.5

-1.0

-1.5

COEFFICIENT (mV/ °C)

-2.0

-2.5

10.10.010.001

-0.1 -0.2 -0.5

-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

for V



CE(sat)

for V



IC, COLLECTOR CURRENT (mA)

Figure 14. Temperature Coefficients

10 ms

100 ms

1 s

1 ms

0.1

IC (A)

0.01

0.001

Single Pulse Test @ T

= 25°C

VCE (Vdc)

Figure 15. Safe Operating Area

1001010.10.01

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Page 6

MMBT2907ALT1G

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

SEE VIEW C

0.25

VIEW C

1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004

STYLE 6:

PIN 1. BASE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104 0 −−− 10 0 −−− 10q°°°°

2. EMITTER

3. COLLECTOR

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.037

0.9

0.035

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0.037

SCALE 10:1

2.0

0.079

inches

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MMBT2907ALT1/D