Datasheet J309, J310, MMBFJ309, MMBFJ310 Datasheet (Fairchild)

Download

Page 1

J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier

Features

• This device is designed for VHF/UHF amplifier, oscillator and mixer applications.

• As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.

• Sourced from Process 92.

• Source & Drain are interchangeable.

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier

December 2010

J309 J310

Absolute Maximum Ratings * T

TO-92

= 25°C unless otherwise noted

MMBFJ309 MMBFJ310

SOT-23

Mark MMBFJ309 : 6U

MMBFJ310 : 6T

Symbol Parameter Value Units

J, Tstg

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Drain-Source Voltage 25 V Gate-Source Voltage -25 V Forward Gate Current 10 mA Operating and Storage Junction Temperature Range - 55 to +150 °C

Thermal Characteristics T

Symbol Parameter

θJC

θJA

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

Total Device Dissipation Derate above 25°C

Thermal Resistance, Junction to Case 127 °C/W Thermal Resistance, Junction to Ambient 357 556 °C/W

= 25°C unless otherwise noted

Max.

J309-J310 *MMBFJ309-310

625

5.0

350

2.8

Units

mW/°C

Page 2

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier

Electrical Characteristics T

Symbol

Parameter Test Condition Min. Typ. Max. Units

= 25°C unless otherwise noted

Off Characteristics

(BR)GSS

GSS

Gate-Source Breakdown Voltage IG = -1.0μA, V Gate Reverse Current VGS = -15V, V

VGS = -15V, V

GS(off)

Gate-Source Cutoff Voltage VDS = 10V, ID = 1.0nA 309

310

On Characteristics

DSS

GS(f)

Zero-Gate Voltage Drain Current*

VDS = 10V , VGS = 0 309 3101224

Gate-Source Forward Voltage VDS = 0, IG = 1.0mA 1.0 V

Small Signal Characteristics

Common-Source Input

(yis)

Conductance

VDS = 10V, ID = 10mA, f = 100MHz 309 310

Common-Source Output

(yos)

VDS = 10V, ID = 10mA, f = 100MHz 0.25 mmhos

Conductance

Common-Gate Power Gain VDS = 10V, ID = 10mA, f = 100MHz 16 dB

) Common-Source Forward

(yfs

VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos

Transconductance

Common-Gate Input

(yig)

VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos

Conductance

Common-Source Forward

Transconductance

VDS = 10V, ID = 10mA, f = 1.0kHz 309 310

Common-Source Output

oss

VDS = 10V, ID = 10mA, f = 1.0kHz 150 μmhos

Conductance

Common-Gate Forward

Conductance

VDS = 10V, ID = 10mA, f = 1.0kHz 309 310

Common-Gate Output

Conductance

VDS = 10V, ID = 10mA, f = 1.0kHz 309

310 C C

NF Noise Figure V

Drain-Gate Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 2.0 2.5 pF

Source-Gate Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 4.1 5.0 pF

= 10V, ID = 10mA, f = 450MHz 3.0 dB

Equivalent Short-Circuit Input

VDS = 10V, ID = 10mA, f = 100Hz 6.0 nV/ Hz

Noise Voltage

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

= 0 -25 V

= 0

= 0, Ta = 125°C

-1.0

-2.0

-1.0

-4.0

-6.5

30 60

0.7

0.5

10,000

8,000

20,000 18,000

13,000 12,000

100 150

nA μA

V V

mA mA

mmhos mmhos

μmhos μmhos

Page 3

Typical Performance Characteristics

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier

Transfer Characteristics

Input Admittance

Forward Transadmittance

Page 4

Typical Performance Characteristics (continued)

Common Drain-Source

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier

Output Conductance vs.

Drain Current

Output Admittance

Noise V oltage vs. Frequency

Capacitance vs. Voltage

Reverse Transadmittance

Page 5

Typical Performance Characteristics (continued)

Parameter Interactions

Leakage Current vs. Voltage

J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier

Transconductance vs.

Drain Current

Power Dissipation vs Ambient Temperature

700 600 500

SOT-23

400 300 200 100

P - POWER DISSIPATION (mW)

0 25 50 75 100 125 150

TO-92

TEMPERATURE ( C)

Page 6

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥

CROSSVOLT¥

CTL¥ Current Transfer Logic¥ DEUXPEED Dual Cool™ EcoSPARK

EfficientMax¥ ESBC¥

Fairchild Fairchild Semiconductor FACT Quiet Series¥

FACT

FAST FastvCore¥ FETBench¥ FlashWriter

FPS¥

F-PFS¥

FRFET Global Power Resource

Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥

MotionMax¥ Motion-SPM¥ OptoHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM¥ PowerTrench

PowerXS™ Programmable Active Droop¥

QFET QS¥ Quiet Series¥ RapidConfigure¥

Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥

SPM STEALTH¥ SuperFET

SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS

SyncFET¥ Sync-Lock™

The Power Franchise

TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥

UHC Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMI CONDUCTOR RESERVES THE RIGHT TO M AKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREI N TO IMPRO VE RELIABILITY, FUNCTION, OR DESI GN. FAI RCHILD DOES NO T ASSUME ANY LI ABILI TY ARISI NG OUT OF THE APPLI CATION OR USE O F ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEI THER DOES IT CONVEY ANY LICENSE UNDER I TS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EX PAND THE TERMS OF F AIRCHIL D’S WORLDWIDE TERMS AND CONDITIONS, SPECIFI CALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRI TICAL COM PONENTS IN LI FE SUPPORT DEVI CES OR SYSTEM S WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEM I CONDUCTOR CORPORATI ON.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any w arranty issues that may arise. F airchild w ill not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I50