Page 1
MMBF5460LT1
l
s
l
JFET − General Purpose
Transistor
P−Channel
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Gate Voltage V
Reverse Gate−Source Voltage V
Forward Gate Current I
DG
GSR
GF
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature TJ, T
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
P
D
R
q
JA
stg
40 Vdc
40 Vdc
10 mAdc
225
1.8
556 °C/W
−55 to +150 °C
mW
mW/°C
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2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
M6E M G
G
1
M6E = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping
MMBF5460LT1 SOT−23 3,000 / Tape & Ree
MMBF5460LT1G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1 Publication Order Number:
3,000 / Tape & Ree
MMBF5460LT1/D
†
Page 2
MMBF5460LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = 10 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 1.0 mAdc)
Gate Source Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
= 25°C unless otherwise noted)
A
V
(BR)GSS
I
GSS
V
GS(off)
V
I
DSS
GS
40 − − Vdc
−
−
−
−
0.75 − 6.0 Vdc
0.5 − 4.0 Vdc
−1.0 − −5.0 mAdc
|Yfs| 1000 − 4000
|yos| − − 75
C
iss
C
rss
− 5.0 7.0 pF
− 1.0 2.0 pF
5.0
1.0
nAdc
mAdc
mmhos
mmhos
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2
Page 3
MMBF5460LT1
DRAIN CURRENT versus GATE
SOURCE VOLTAGE
4.0 4000
3.5
3.0
2.5
2.0
1.5
, DRAIN CURRENT (mA)
D
I
1.0
0.5
0
0 0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VGS, GATE−SOURCE VOLTAGE (VOLTS)
Figure 1. V
10 10000
9.0
8.0
7.0
6.0
5.0
4.0
3.0
, DRAIN CURRENT (mA)
D
I
2.0
1.0
0
0 1.0
0.5 1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE−SOURCE VOLTAGE (VOLTS)
TA = −55°C
TA = −55°C
25°C
25°C
GS(off)
125°C
125°C
= 2.0 Volts
VDS = 15 V
FORWARD TRANSFER ADMITTANCE ( mhos)m
Y
VDS = 15 V
FORWARD TRANSFER ADMITTANCE ( mhos)m
FORWARD TRANSFER ADMITTANCE
versus DRAIN CURRENT
3000
2000
1000
700
500
300
fs
200
0.2 0.3 0.5 0.7 2.0 3.0 4.0
ID, DRAIN CURRENT (mA)
Figure 4. V
7000
5000
3000
2000
1000
700
fs
500
0.5 0.7 1.0 2.0 3.0 5.0 7.0
ID, DRAIN CURRENT (mA)
GS(off)
1.0
= 2.0 Volts
VDS = 15 V
f = 1.0 kHz
VDS = 15 V
f = 1.0 kHz
Figure 2. V
16 10000
14
12
TA = −55°C
25°C
VGS, GATE−SOURCE VOLTAGE (VOLTS)
, DRAIN CURRENT (mA)
D
I
8.0
6.0
4.0
2.0
10
0
1.0 2.0 3.0 8.04.0 5.0 6.0 7.0
0
Figure 3. V
GS(off)
125°C
GS(off)
= 4.0 Volts
VDS = 15 V
= 5.0 Volts
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3
Figure 5. V
7000
5000
3000
2000
1000
700
FORWARD TRANSFER ADMITTANCE ( mhos)m Y
fs
500
Y
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
ID, DRAIN CURRENT (mA)
Figure 6. V
GS(off)
GS(off)
= 4.0 Volts
= 5.0 Volts
VDS = 15 V
f = 1.0 kHz
Page 4
MMBF5460LT1
1000
700
500
300
200
100
70
50
30
, OUTPUT RESISTANCE (k ohms)
oss
20
r
10
0.1 0.2
0.5 1.0 2.0 5.0 10
ID, DRAIN CURRENT (mA)
Figure 7. Output Resistance
versus Drain Current
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
NF, NOISE FIGURE (dB)
2.0
1.0
0
1.0 10 100 1000 10,000
10
VDS = 15 V
f = 1.0 kHz
9.0
8.0
7.0
I
DSS
= 3.0 mA
6.0
5.0
C, CAPACITANCE (pF)
4.0
3.0
6.0 mA
10 mA
2.0
1.0
0
0
RS, SOURCE RESISTANCE (k Ohms)
C
iss
C
oss
C
rss
10 20 30 40
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 8. Capacitance versus
Drain−Source Voltage
VDS = 15 V
VGS = 0
f = 100 Hz
f = 1.0 MHz
VGS = 0
Figure 9. Noise Figure versus
Source Resistance
v
*C
i
C
iss
is C
osp
C
rss
r
oss
in parallel with Series Combination of C
oss
C
oss
| yfs | v
i
iss
and C
NOTE:
1. Graphical data is presented for dc conditions. Tabular data is given
for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
Figure 10. Equivalent Low Frequency Circuit
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4
COMMON SOURCE
y PARAMETERS FOR FREQUENCIES
BELOW 30 MHz
yis = jW C
iss
yos = jW C
osp
* + 1/r
oss
yfs = yfs |
yrs = −jW C
rss
rss
.
Page 5
MMBF5460LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
H
SEE VIEW C
E
c
0.25
3
E
12
b
e
q
A
L
A1
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004
L1
H
E
STYLE 10:
PIN 1. DRAIN
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104
2. SOURCE
3. GATE
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
ǒ
inches
mm
Ǔ
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMBF5460LT1/D
5
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