Datasheet mmbf2201nt1-d Datasheet

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Page 1

MMBF2201NT1

Preferred Device

Power MOSFET 300 mAmps, 20 Volts

N-Channel SC-70/SOT-323

These miniature surface mount MOSFETs low R

DS(on)

assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are dc-dc converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Features

•Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

•Miniature SC-70/SOT-323 Surface Mount Package Saves

Board Space

•AEC Qualified

•PPAP Capable

•Pb-Free Package is Available

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain-to-Source Voltage V

Gate-to-Source Voltage - Continuous V

Drain Current

- Continuous @ TA = 25°C

- Continuous @ TA = 70°C

- Pulsed Drain Current (tp ≤ 10 ms)

Total Power Dissipation @ TA = 25°C (Note 1)

Derate above 25°C

Operating and Storage Temperature Range TJ, T

Thermal Resistance, Junction-to-Ambient

Maximum Lead Temperature for Soldering Purposes, for 10 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Mounted on G10/FR4 glass epoxy board using minimum recommended

footprint.

= 25°C unless otherwise noted)

DSS

-55 to 150 °C

stg

20 Vdc

±20 Vdc

300 240 750

150

1.2

833 °C/W

260 °C

mAdc

mW/°C

http://onsemi.com

300 mAMPS, 20 VOLTS

DS(on)

SC-70/SOT-323

CASE 419

STYLE 8

N1 = Device Code M = Date Code*

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

G = Pb-Free Package

ORDERING INFORMATION

Device Package

MMBF2201NT1 SC-70/

MMBF2201NT1G SC-70/

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Preferred devices are recommended choices for future use and best overall value.

= 1 W

N-Channel

MARKING DIAGRAM

AND PIN ASSIGNMENT

Drain

N1 MG

Gate

SOT-323

(Pb-Free)

Source

Shipping

3000 Tape & Reel

†

© Semiconductor Components Industries, LLC, 2007

October, 2007 - Rev. 5

Publication Order Number:

MMBF2201NT1/D

Page 2

MMBF2201NT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 mA)

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate-Body Leakage Current (VGS = ±20 Vdc, VDS = 0) I

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Static Drain-to-Source On-Resistance

(VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc)

Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) g

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 5.0 V) C

Output Capacitance (VDS = 5.0 V) C

Transfer Capacitance (VDG = 5.0 V) C

SWITCHING CHARACTERISTICS (Note 3)

Turn-On Delay Time

Rise Time t

Turn-Off Delay Time t

(VDD = 15 Vdc, ID = 300 mAdc,

RL = 50 W)

Fall Time t

Gate Charge (See Figure 5) Q

SOURCE-DRAIN DIODE CHARACTERISTICS

Continuous Current I

Pulsed Current I

Forward Voltage (Note 3) V

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

(BR)DSS

DSS

GSS

GS(th)

DS(on)

d(on)

d(off)

iss

oss

rss

20 - - Vdc

mAdc

1.0 10

- - ±100 nAdc

1.0 1.7 2.4 Vdc

0.75

1.0

1.4

- 450 - mMhos

- 45 - pF

- 25 -

- 5.0 -

- 2.5 -

- 15 -

- 0.8 -

- 1400 - pC

- - 0.3 A

- - 0.75

- 0.85 - V

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, DRAIN CURRENT (AMPS)

0.2

0.1

TYPICAL CHARACTERISTICS

VGS = 4 V

VGS = 3.5 V

VGS = 3 V

VGS = 2.5 V

4087910

VDS, DRAIN-SOURCE VOLTAGE (VOLTS)

Figure 1. Typical Drain Characteristics

1.6

1.4

1.2

1.0

0.8

0.6

, ON RESISTANCE (OHMS)

0.4

0.2

-60123 56

http://onsemi.com

VGS = 4.5 V

ID = 100 mA

VGS = 10 V

ID = 300 mA

-40 -20 0 20 40 60 80 100 120 140 160 TEMPERATURE (°C)

Figure 2. On Resistance versus Temperature

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MMBF2201NT1

TYPICAL CHARACTERISTICS

, ON RESISTANCE (OHMS)

241 3 5 0.2 0.3 0.4 0.80.6 0.7

GATE-SOURCE VOLTAGE (VOLTS)

Figure 3. On Resistance versus Gate-Source

Voltage

1.0

0.1

0.01

, SOURCE CURRENT (AMPS)

0.001

0.10

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 2 6 10 14 18

VSD, SOURCE-DRAIN FORWARD VOLTAGE (VOLTS)

1.2

ID = 300 mA

7096810

1.0

0.8

0.6

0.4

, ON RESISTANCE (OHMS)

0.2

C, CAPACITANCE (pF)

VGS = 4.5 V

VGS = 10 V

0.10 0.5 ID, DRAIN CURRENT (AMPS)

Figure 4. On Resistance versus Drain Current

40 8 12 16 20

VDS, DRAIN-SOURCE VOLTAGE (VOLTS)

VGS = 0 V

F = 1 mHz

iss

oss

rss

Figure 5. Source-Drain Forward Voltage

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

, DRAIN CURRENT (AMPS)

0.2

0.1

0.50 2.51.0 1.5 2.0 4.03.0 3.5 VGS, GATE-SOURCE VOLTAGE (VOLTS)

Figure 7. Transfer Characteristics

http://onsemi.com

Figure 6. Capacitance Variation

-55

150

4.5

Page 4

MMBF2201NT1

PACKAGE DIMENSIONS

SC-70 (SOT-323)

CASE 419-04

ISSUE M

0.05 (0.002)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIMAMIN NOM MAX MIN

A1 0.00 0.05 0.10 0.000 A2 0.7 REF

b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 D 1.80 2.10 2.20 0.071 E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047

STYLE 8:

PIN 1. GATE

MILLIMETERS

0.80 0.90 1.00 0.032

0.65 BSC

0.425 REF

2.00 2.10 2.40 0.079 0.083 0.095

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.035 0.040

0.002 0.004

0.028 REF

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

0.026 BSC

0.017 REF

SOLDERING FOOTPRINT*

0.65

0.025

1.9

0.075

0.9

0.035

0.7

0.028

SCALE 10:1

inches

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MMBF2201NT1/D