Datasheet mmbf170lt1-d Datasheet

Page 1
MMBF170LT1
Power MOSFET 500 mA, 60 V
N-Channel SOT-23
•Pb-Free Packages are Available
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MAXIMUM RATINGS
Rating Symbol Value Unit
Drain-Source Voltage V
Drain-Gate Voltage V
Gate-Source Voltage
- Continuous
- Non-repetitive (t
Drain Current - Continuous
p
- Pulsed
≤ 50 ms)
V
DSS
DGS
V
GSM
I
I
DM
GS
D
60 Vdc
60 Vdc
±20 ±40
0.5
0.8
Vdc Vpk
Adc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board
(Note 1.) T Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. FR-5 = 1.0  0.75  0.062 in.
= 25°C
A
P
D
R
q
JA
stg
225
1.8mWmW/°C
556 °C/W
-55 to +150
°C
500 mA, 60 V
R
DS(on)
1
MARKING DIAGRAM
& PIN ASSIGNMENT
= 5 W
SOT-23 CASE 318 STYLE 21
N-Channel
3
2
3
Drain
© Semiconductor Components Industries, LLC, 2008
April, 2008 - Rev. 6
6Z MG
G
2 SourceGate 1
6Z = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
1 Publication Order Number:
MMBF170LT1/D
Page 2
MMBF170LT1
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
C
Symbol Min Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Gate-Body Leakage Current, Forward (V
= 15 Vdc, VDS = 0) I
GSF
V
(BR)DSS
GSS
60 - Vdc
- 10 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (V
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 200 mA) r
On-State Drain Current (VDS = 25 Vdc, VGS = 0) I
= VGS, ID = 1.0 mA) V
DS
GS(th)
DS(on)
D(off)
0.8 3.0 Vdc
- 5.0
- 0.5
W
mA
DYNAMIC CHARACTERISTICS
Input Capacitance
= 10 Vdc, VGS = 0 V, f = 1.0 MHz)
(V
DS
C
iss
- 60 pF
SWITCHING CHARACTERISTICS (Note 1)
Turn-On Delay Time
Turn-Off Delay Time t
(VDD = 25 Vdc, ID = 500 mA, R
Figure 1
gen
= 50 W)
t
d(on)
d(off)
- 10
- 10
ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device Package Shipping
MMBF170LT1 SOT-23 (TO-236) 3,000 Tape & Reel
MMBF170LT1G SOT-23 (TO-236)
(Pb-Free)
MMBF170LT3 SOT-23 (TO-236) 10,000 Tape & Reel
MMBF170LT3G SOT-23 (TO-236)
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3,000 Tape & Reel
10,000 Tape & Reel
†
PULSE
GENERATOR
50 W
+25 V
t
on
t
d(on)
V
in
20 dB 50 W
125 W
40 pF
ATTENUATOR
TO SAMPLING SCOPE 50 W INPUT
V
out
OUTPUT
INVERTED
V
out
10%
INPUT
t
r
90%
t
d(off)
90%
50%
10%
V
50 W 1 MW
in
PULSE WIDTH
(Vin AMPLITUDE 10 VOLTS)
Figure 1. Switching Test Circuit Figure 2. Switching Waveform
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2
90%
50%
t
off
t
f
Page 3
MMBF170LT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.2 VGS = 10 V
1.0
TJ = 25°C
0.8
0.6
0.4
, DRAIN CURRENT (A)
D
I
0.2
0
VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 3. On-Region Characteristics Figure 4. Transfer Characteristics
8
TJ = 25°C
7
6
5
4
3
2
VGS = 4.5 V
1
, DRAIN-TO-SOURCE RESISTANCE (W)
0
DS(on)
R
VGS = 10 V
0.65 0.75
ID, DRAIN CURRENT (A)
Figure 5. On-Resistance vs. Drain Current and
Gate Voltage
6
5.0 V
4.5 V
4.2 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
0.850.550.450.350.250.15
1.0
0.8
0.6
0.4
, DRAIN CURRENT (A)
D
0.2
I
0
7543210
15
12.5
10
7.5
Q
5
2.5
, GATE-TO-SOURCE VOLTAGE (V)
GS
0
V
Drain-to-Source Voltage vs. Total Charge
VDS ≥ 10 V
TJ = 150°C
TJ = 25°C
TJ = -55°C
4321
QT
V
DS
gs
Q
gd
10.50
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate-to-Source and
V
GS
ID = 0.5 A T
1.5
= 25°C
J
30
25
20
15
10
5
0
2
8765
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
0.24 VGS = 0 V
0.22 T
= 25°C
0.20
J
0.18
0.16
0.14
0.12
0.10
0.08
0.06
, SOURCE CURRENT (A)
S
I
0.04
0.02
0
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 7. Diode Forward Voltage vs. Current
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3
0.90.80.70.60.50.4
1.00.30.20.1
Page 4
MMBF170LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.4 VGS = 10 V
2.2
= 200 mA
I
D
2.0
1.8
1.6
1.4
1.2
(NORMALIZED)
1.0
0.8
, STATIC DRAIN-SOURCE ON-RESISTANCE
0.6
0.4
DS(on)
-60 -20 20 60 100 140 -60 -20 20 60 100 140
r
T, TEMPERATURE (°C)
Figure 8. Temperature versus Static
Drain-Source On-Resistance
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
, THRESHOLD VOLTAGE (NORMALIZED)
0.7
GS(th)
V
VDS = V ID = 1.0 mA
T, TEMPERATURE (°C)
Figure 9. Temperature versus Gate
Threshold Voltage
GS
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4
Page 5
MMBF170LT1
PACKAGE DIMENSIONS
SOT-23 (TO-236)
CASE 318-08
ISSUE AN
D
H
SEE VIEW C
E
c
0.25
3
E
12
b
e
q
A
L
A1
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004
L1
H
E
STYLE 21:
PIN 1. GATE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104
2. SOURCE
3. DRAIN
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
ǒ
SCALE 10:1
inches
Ǔ
SOT-23
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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MMBF170LT1/D
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