Datasheet mmbf0201nlt1-d Datasheet

MMBF0201NLT1

l
l

s

Preferred Device

Power MOSFET
300 mAmps, 20 Volts

N−Channel SOT−23

These miniature surface mount MOSFETs low R

DS(on)

assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc−dc converters, power management in portable and
battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.

Features

• Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Miniature SOT−23 Surface Mount Package Saves Board Space

• Pb−Free Package is Available

MAXIMUM RATINGS (T

Rating Symbol Value Unit

Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Drain Current

− Continuous @ TA = 25°C

− Continuous @ TA = 70°C

− Pulsed Drain Current (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C P
Operating and Storage Temperature Range TJ, T
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

= 25°C unless otherwise noted)

J

DSS

GS

I

D

I

D

I

DM

D

stg

R

q

JA

T

L

20 Vdc

± 20 Vdc

mAdc
300
240
750

225 mW

− 55 to 150 °C
556 °C/W
260 °C

http://onsemi.com

300 mAMPS − 20 VOLTS

R

DS(on)

1

3

1

2

SOT−23
CASE 318
STYLE 21

N1 = Specific Device Code
M = Date Code*
G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

= 1 W

N−Channel

3

2

MARKING DIAGRAM

AND PIN ASSIGNMENT

3

Drain

N1 M G

G

1

Gate

2

Source

© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 3

ORDERING INFORMATION

Device Package Shipping

MMBF0201NLT1 SOT−23 3000 Tape & Ree
MMBF0201NLT1G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

Preferred devices are recommended choices for future use
and best overall value.

1 Publication Order Number:

3000 Tape & Ree

MMBF0201NLT1/D

†

MMBF0201NLT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 mA)

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 mAdc)

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)

Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) g

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 5.0 V) C
Output Capacitance (VDS = 5.0 V) C
Transfer Capacitance (VDG = 5.0 V) C

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time
Rise Time t
Turn−Off Delay Time t

(VDD = 15 Vdc, ID = 300 mAdc,

RL = 50 W)

Fall Time t
Gate Charge (See Figure 5) Q

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Current I
Pulsed Current I
Forward Voltage (Note 2) V

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

V

(BR)DSS

I

DSS

GSS

V

GS(th)

r

DS(on)

t

d(on)

d(off)

SM

FS

iss
oss
rss

r

f

S

SD

20 − − Vdc

mAdc

−

−

−

−

1.0
10

− − ±100 nAdc

1.0 1.7 2.4 Vdc

W

−

−

0.75

1.0

1.0

1.4

− 450 − mMhos

− 45 − pF

− 25 −

− 5.0 −

− 2.5 −

ns

− 2.5 −

− 15 −

− 0.8 −

T

− 1400 − pC

− − 0.3 A

− − 0.75

− 0.85 − V

http://onsemi.com

2

MMBF0201NLT1

TYPICAL ELECTRICAL CHARACTERISTICS

1.0

0.8

0.6

0.4

, DRAIN CURRENT (AMPS)

D

I

0.2

0

01 234 6

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

25°C

125°C

−55 °C

5

Figure 1. Transfer Characteristics

1.5

1.2

0.9
VGS = 4.5 V

1.0

0.8

0.6

0.4

, DRAIN CURRENT (AMPS)

D

I

0.2

0

0 0.3 0.6 0.9 1.2 1.4

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 5 V

VGS = 4 V

VGS = 10, 9, 8, 7, 6 V

VGS = 3 V

Figure 2. On−Region Characteristics

2.4

2.0

1.5

0.6

VGS = 10 V

ON−RESISTANCE (OHMS)

0.3

0

0 0.2 0.4 1

ID, DRAIN CURRENT (AMPS)

0.6 0.8 15

Figure 3. On−Resistance versus Drain Current

16

14

12

10

8

6

4

, GATE−TO−SOURCE VOLTAGE (VOLTS)

2

GS

V

0

0 160 450 2000

VDS = 16 V
ID = 300 mA

Qg, TOTAL GATE CHARGE (pC)

3400

1.0

0.5

, DRAIN−TO−SOURCE RESISTANCE (OHMS)

0

DS(on)

0 5 10 20

R

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 4. On−Resistance versus

Gate−to−Source Voltage

1.10

1.05

1.00

0.95

0.90

0.85

, NORMALIZED

0.80

GS(th)

0.75

V

0.70

0.65

0.60

−25 25 100 150

0 50 75 125

TEMPERATURE (°C)

ID = 250 mA

Figure 5. Gate Charge

Figure 6. Threshold Voltage Variance

Over Temperature

http://onsemi.com

3

MMBF0201NLT1

TYPICAL ELECTRICAL CHARACTERISTICS

1.8

1.6

1.4

1.2

, NORMALIZED (OHMS)

1.0

DS(on)

R

0.8

0.6

−50 −25 0 25 50 150

VGS = 10 V @ 300 mA

VGS = 4.5 V @ 100 mA

75

100 125

TJ, JUNCTION TEMPERATURE (°C)

Figure 7. On−Resistance versus

Junction Temperature

10

1.0

100

80

60

C

40

C, CAPACITANCE (pF)

20

0

0 5 10 15 20

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

iss

C

oss

C

rss

Figure 8. Capacitance

0.1

0.01

SOURCE CURRENT (AMPS)

0.001
0 0.3 0.6 1.4

125°C 25°C −55°C

0.9 1.2

SOURCE−TO−DRAIN FORWARD VOLTAGE (VOLTS)

Figure 9. Source−to−Drain Forward Voltage

versus Continuous Current (I

)

S

http://onsemi.com

4

MMBF0201NLT1

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

A

A1

D

3

E

12

b

e

SEE VIEW C

H

E

c

0.25

q

L

L1

VIEW C

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE,
NEW STANDARD 318−08.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004

L1

H

E

STYLE 21:

PIN 1. GATE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

2. SOURCE

3. DRAIN

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.95

0.037

0.037

2.0

0.079

0.9

0.035

SCALE 10:1

0.8

ǒ

inches

mm

Ǔ

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

http://onsemi.com

ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder

For additional information, please contact your
local Sales Representative.

MMBF0201NLT1/D

5