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SEMICONDUCTOR TECHNICAL DATA
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by MMBD352WT1/D
These devices are designed primarily for UHF mixer applications but are suitable
also for use in detector and ultra–fast switching circuits.
• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
• Low Forward Voltage — 0.5 Volts (Typ) @ IF = 10 mA
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature TJ, T
(2)
TA = 25°C
(1)
DEVICE MARKING
MMBD352WT1 = M5
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Forward Voltage
(IF = 10 mAdc)
Reverse Voltage Leakage Current
(VR = 3.0 V)
(VR = 7.0 V)
Capacitance
(VR = 0 V, f = 1.0 MHz)
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
R
P
D
R
q
JA
P
D
R
q
JA
stg
7.0 V
200
1.6
625 °C/W
300
2.4
417 °C/W
–55 to +150 °C
mW
mW/°C
mW
mW/°C
CC
3
1
2
1
ANODE
CASE 419–02, STYLE 9
V
F
I
R
C — 1.0 pF
3
CATHODE/ANODE
MMBD352WT1
SOT–323 (SC–70)
— 0.60 V
—
—
0.25
10
2
CATHODE
m
A
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
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MMBD352WT1
TYPICAL CHARACTERISTICS
100
10
1.0
, FORWARD CURRENT (mA)
F
I
0.1
TA = 85°C
TA = –40°C
TA = 25°C
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
1.0
0.9
0.8
C, CAPACITANCE (pF)
0.7
0.7 0.80.3 0.4 0.5 0.6
0.6
0
1.0 2.0 3.0 4.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitance
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Page 3
MMBD352WT1
INFORMATION FOR USING THE SOT–323 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
0.025
0.65
0.035
0.9
SC–70/SOT–323 POWER DISSIPATION
The power dissipation of the SC–70/SOT–323 is a function
of the collector pad size. This can vary from the minimum
pad size for soldering to the pad size given for maximum
power dissipation. Power dissipation for a surface mount
device is determined by T
temperature of the die, R
device junction to ambient; and the operating temperature,
TA. Using the values provided on the data sheet, PD can be
calculated as follows.
PD =
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
, the maximum rated junction
J(max)
, the thermal resistance from the
θJA
T
J(max)
R
θJA
– T
A
0.028
0.7
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.075
1.9
inches
mm
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 200 milliwatts.
PD =
The 0.625°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 200 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad. Using a board material such as
Thermal Clad, a power dissipation of 300 milliwatts can be
achieved using the same footprint.
150°C – 25°C
0.625°C/W
= 200 milliwatts
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
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MMBD352WT1
P ACKAGE DIMENSIONS
0.05 (0.002)
A
L
3
S
12
V
B
D
G
R
C
H
N
K
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM MIN MAX MIN MAX
A 0.071 0.087 1.80 2.20
B 0.045 0.053 1.15 1.35
C 0.035 0.049 0.90 1.25
D 0.012 0.016 0.30 0.40
G 0.047 0.055 1.20 1.40
H 0.000 0.004 0.00 0.10
J 0.004 0.010 0.10 0.25
K 0.017 REF 0.425 REF
L 0.026 BSC 0.650 BSC
N 0.028 REF 0.700 REF
R 0.031 0.039 0.80 1.00
S 0.079 0.087 2.00 2.20
V 0.012 0.016 0.30 0.40
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE–ANODE
MILLIMETERSINCHES
CASE 419–02
ISSUE H
SOT–323 (SC–70)
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
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MMBD352WT1/D
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