Absolute Maximum Ratings* TA = 25°C unless otherwise noted
SymbolParameterValueUnits
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Working Inverse Voltage180V
Average Rectified Current200mA
DC Forward Current600mA
Recurren t Peak Forward Current700mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range-55 to +150
Operating Junction Temperature150
1.0
2.0
A
A
°
°
C
C
Thermal Characteristics TA = 25°C unless otherwise noted
SymbolCharacteristicMaxUnits
MMBD1501/A/ 1503-1505/A*
P
D
R
θ
JA
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
ã 1997 Fairchild Semiconductor Corporation
Total Dev ice Dissipation
Derate above 25°C
350
2.8
Thermal Resistan ce, Junction to Ambient357
mW
mW/°C
C/W
°
Page 2
µ
µ
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
SymbolParameterTest ConditionsMinMaxUnits
B
V
I
R
V
F
C
O
Breakdown Voltage
I
= 5.0 µA
R
Reverse CurrentVR = 125 V
= 125 V, TA = 150°C
V
R
V
= 180 V
R
V
= 180 V, TA = 150°C
Forward Voltage
R
IF = 1.0 mA
I
= 10 mA
F
I
= 50 mA
F
I
= 100 mA
F
I
= 200 mA
F
= 300 mA
I
F
200V
1.0
3.0
10
5.0
620
720
800
830
0.87
0.9
720
830
890
930
1.1
1.15
nA
nA
mV
mV
mV
mV
Diode CapacitanceVR = 0, f = 1.0 MHz4.0pF
A
A
V
V
Typical Characteristics
MMBD1501/A / 1503/A / 1504/A / 1505/A
REVERSE VOLTA GE vs REVERSE CURRENT
BV - 3.0 to 100 uA
325
Ta= 25°C
300
275
R
V - REVERSE VOLTAGE (V)
250
3510203050100
I - REVERSE CURRENT (uA)
R
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1 to 100 uA
Ta= 25°C
550
500
450
400
F
F
V
V - FORWARD VOLTAGE (mV)
350
12351020 3050100
F
I - FORWARD CURRENT (uA)
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 130 - 205 Vo lts
3
Ta= 25°C
2
1
0
R
I - REVERSE CURRENT (nA)
130150170190
GENERAL RULE: The Reverse Current of a diode will approximately
V - REVERSE VOLTAGE (V)
R
double for every ten (10) Degree C increase in Temperature
205
FORWARD VOL TAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
800
Ta= 25°C
750
700
650
600
550
F
F
V
V - FORWARD VOLTAGE (mV)
500
0.10.2 0.3 0.5123510
F
I - FORWARD CURRENT (mA)
Page 3
Typical Characteristics (continued)
MMBD1501/A / 1503/A / 1504/A / 1505/A
High Conductance Low Leakage Diode
(continued)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 to 800 mA
1.2
Ta= 25°C
1.1
1
0.9
0.8
F
V - FORWARD VOLTAGE (V)
1020 3050100200 300 500
I
I - FORWARD CURRENT (mA)
F
F
Average Rectified Current (Io) &
Forward Current (I ) versus
Ambient Temperature (T )
I - FORWARD CURRENT STEADY STATE - mA
500
400
300
200
I - CURRENT (mA)
100
0
050100150
R
Io - AVERAGE RECTIFIED CURRENT - mA
T - AMBIENT TEMPERATURE ( C)
A
F
A
o
CAPACITANCE vs REVERSE VOLTAGE
VR - 0 to 15 V
4
3.5
3
2.5
2
CAPACITANCE (pF)
1.5
1
02468101214
REVERSE VOLTAGE (V)
Ta= 25°C
POWER DERATING CURVE
500
400
300
SOT-23 Pkg
200
100
D
P - POWER DISSIPATION (mW)
0
050100150200
I - AVERAGE TEMPERATURE ( C)
O
DO-35 Pkg
o
15
Page 4
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not intended to be an exhaustive list of all such trademarks.
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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