Datasheet MMBD1503, MMBD1503A, MMBD1501, MMBD1501A, MMBD1504A Datasheet (Fairchild Semiconductor)

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Page 1
Discrete POWER & Signal
Technologies
MMBD1501/A / 1503/A / 1504/A / 1505/A
MMBD1501/A / 1503/A / 1504/A / 1505/A
3
SOT-23
3
12
2
MMBD1501 11 MMBD1501A A11
1
MMBD1503 13 MMBD1503A A13 MMBD1504 14 MMBD1504A A14 MMBD1505 15 MMBD1505A A15
MARKING
CONNECTION DIAGRAMS
3
1501
2 NC
1
3
1504
21
3
1503
21
3
1505
21
High Conductance Low Leakage Diode
Sourced from Process 1L.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Working Inverse Voltage 180 V Average Rectified Current 200 mA DC Forward Current 600 mA Recurren t Peak Forward Current 700 mA Peak Forward Surge Current
Pulse width = 1.0 second Pulse width = 1.0 microsecond
Storage Temperature Range -55 to +150 Operating Junction Temperature 150
1.0
2.0
A A
° °
C C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MMBD1501/A/ 1503-1505/A*
P
D
R
θ
JA
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
ã 1997 Fairchild Semiconductor Corporation
Total Dev ice Dissipation
Derate above 25°C
350
2.8
Thermal Resistan ce, Junction to Ambient 357
mW
mW/°C
C/W
°
Page 2
µ
µ
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
Breakdown Voltage
I
= 5.0 µA
R
Reverse Current VR = 125 V
= 125 V, TA = 150°C
V
R
V
= 180 V
R
V
= 180 V, TA = 150°C
Forward Voltage
R
IF = 1.0 mA I
= 10 mA
F
I
= 50 mA
F
I
= 100 mA
F
I
= 200 mA
F
= 300 mA
I
F
200 V
1.0
3.0 10
5.0
620 720 800 830
0.87
0.9
720 830 890 930
1.1
1.15
nA nA
mV mV mV mV
Diode Capacitance VR = 0, f = 1.0 MHz 4.0 pF
A A
V V
Typical Characteristics
MMBD1501/A / 1503/A / 1504/A / 1505/A
REVERSE VOLTA GE vs REVERSE CURRENT
BV - 3.0 to 100 uA
325
Ta= 25°C
300
275
R
V - REVERSE VOLTAGE (V)
250
3 5 10 20 30 50 100
I - REVERSE CURRENT (uA)
R
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1 to 100 uA
Ta= 25°C
550
500
450
400
F
F
V
V - FORWARD VOLTAGE (mV)
350
1 2 3 5 10 20 30 50 100
F
I - FORWARD CURRENT (uA)
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 130 - 205 Vo lts
3
Ta= 25°C
2
1
0
R
I - REVERSE CURRENT (nA)
130 150 170 190
GENERAL RULE: The Reverse Current of a diode will approximately
V - REVERSE VOLTAGE (V)
R
double for every ten (10) Degree C increase in Temperature
205
FORWARD VOL TAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
800
Ta= 25°C
750 700 650 600 550
F
F
V
V - FORWARD VOLTAGE (mV)
500
0.1 0.2 0.3 0.5 1 2 3 5 10
F
I - FORWARD CURRENT (mA)
Page 3
Typical Characteristics (continued)
MMBD1501/A / 1503/A / 1504/A / 1505/A
High Conductance Low Leakage Diode
(continued)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 to 800 mA
1.2
Ta= 25°C
1.1
1
0.9
0.8
F
V - FORWARD VOLTAGE (V)
10 20 30 50 100 200 300 500
I
I - FORWARD CURRENT (mA)
F
F
Average Rectified Current (Io) &
Forward Current (I ) versus
Ambient Temperature (T )
I - FORWARD CURRENT STEADY STATE - mA
500
400
300
200
I - CURRENT (mA)
100
0
050100150
R
Io - AVERAGE RECTIFIED CURRENT - mA
T - AMBIENT TEMPERATURE ( C)
A
F
A
o
CAPACITANCE vs REVERSE VOLTAGE
VR - 0 to 15 V
4
3.5 3
2.5 2
CAPACITANCE (pF)
1.5 1
02468101214
REVERSE VOLTAGE (V)
Ta= 25°C
POWER DERATING CURVE
500
400
300
SOT-23 Pkg
200
100
D
P - POWER DISSIPATION (mW)
0
0 50 100 150 200
I - AVERAGE TEMPERATURE ( C)
O
DO-35 Pkg
o
15
Page 4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ CoolFET™ CROSSVOLT™ E2CMOS
TM
FACT™ FACT Quiet Series™
®
FAST FASTr™ GTO™ HiSeC™
ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™
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2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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