Datasheet MMBD1403A, MMBD1404A, MMBD1401A, MMBD1405A Datasheet (Fairchild Semiconductor)

Page 1
MMBD1401A / 1403A / 1404A / 1405A
MMBD1401A / 1403A / 1404A / 1405A
CONN E CT ION DIA GRAMS
3
1401A
2 NC
1
3
1404A 1405A
21
3
1403A
21
3
21
3
SOT-23
3
A29
12
2
1
MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34
MARKING
High Voltage General Purpose Diode
Sourced from Process 2V.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Working Inve rse Voltage 175 V Average Rectified Current 200 mA DC Forward Current 600 mA Recurren t Peak Forward Current 700 mA Peak Forward Surge Current
Pulse width = 1.0 second Pulse width = 1.0 microsecond
Storage Temperature Range -55 to +150 Operating Junction Temperature 150
1.0
2.0
A A
° °
C C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MMBD1401A-1405A*
P
D
R
θ
JA
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
1999 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
350
2.8
Thermal Resistance, Junction to Ambient 357
mW
mW/°C
°C/W
MMBD1401A-1405A, Rev. A
Page 2
High Voltage General Purpoise Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
O
T
RR
Breakdown Voltage
I
= 100 µA
R
Reverse Current VR = 120 V
= 175 V
V
R
Forward Voltage
MMBD1401A / 1403A MMBD1404A / 1405A MMBD1401A / 1403A MMBD1404A / 1405A
I
= 10 mA
F
= 50 mA
I
F
= 200 mA
I
F
= 200 mA
I
F
= 300 mA
I
F
= 300 mA
I
F
250 V
40
100
760
800 920
mV mV
1.1
1.0
1.25
1.1
nA nA
Diode Capacitance VR = 0, f = 1.0 MHz 2.0 pF Reverse Recovery Tim e IF = IR = 30 mA,
= 1.0 mA, RL = 100
I
RR
50 nS
V V V V
Typical Characteristics
MMBD1401A / 1403A / 1404A / 1405A
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
325
Ta= 25°C
300
R
R
V
V - REVERSE VOLTAGE (V)
275
3 5 10 20 30 50 100
I - REVERSE CURRENT (uA)
R
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 180 to 255 V
100
Ta= 25°C
90 80 70 60 50 40 30 20
R
R
I - REVERSE CURRENT (nA)
I
180 200 220 240
GENERAL RULE: The Reverse Current of a diode will approximately
V - REVERSE VOLTAGE (V)
R
double for every ten Degree C increase in Temperature
255
REVERSE CURRENT vs REVERSE VOLT AGE
IR - 55 to 205 V
50
Ta= 25°C
40 30 20 10
0
R
I - REVERSE CURRENT (nA)
55 75 95 115 135 155 175 195
GENERAL RULE: The Reverse Current of a diode will approximately
V - REVERSE VOLTAGE (V)
R
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
Ta= 25°C
450
400
350
300
250
F
F
V - FORWARD VOLTAGE (mV)
V
1 2 3 5 10 20 30 50 100
F
I - FORWARD CURRENT (uA)
MMBD1401A-1405A, Rev. A
Page 3
Typical Characteristics (continued)
MMBD1401A / 1403A / 1404A / 1405A
High Voltage General Purpoise Diode
(continued)
FORWARD VOLTAGE vs FORWARD CURRENT
725
Ta= 25°C
700
650
600
550
500
F
F
V
V - FORWARD VOLTAGE (mV)
450
0.1 0.2 0.3 0.5 1 2 3 5 10
VF - 0.1 to 10 mA
F
I - FORWARD CURRENT (mA)
Forward Voltage vs Ambient Temp erature
VF - 1.0 uA - 10 mA (-40 to + 80 Deg C)
800
600
400
200
F
F
V
V - FORWARD VOLTAGE (mV)
0.001 0.003 0 .01 0.03 0.1 0.3 1 3 1 0
F
I - FORWARD CURRENT (mA)
Ta= -40°C
Ta= 25°C
Ta= +80°C
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 to 800 mA
1.4
Ta= 25 ° C
1.3
1.2
1.1 1
0.9
0.8
F
F
V
V - FORWARD VOLTAGE (mV)
0.7
10 20 30 50 100 200 300 500
I - FORWARD CURRENT (mA)
F
800
CAPACITANCE vs REVERSE VOLTAGE
VR - 0 to 15 V
1.3
Ta= 25°C
1.2
1.1
1
CAPACITANCE (pF)
0.9
0.8
0 2 4 6 8 10 12 14
REVERSE VOLTAGE (V)
15
REVERSE RECOVERY TIME vs
REVERSE RECOVERY CURRENT (Irr)
50
40
30
IF = IR = 30 mA
REVERSE RECOVERY (nS)
Rloop = 100 Ohms
20
11.522.53
Irr - REVERSE RECOVERY CURRENT ( m A)
Average Rectified Current (Io) &
Forward Current (I ) versus
Ambient Temperature (T )
500
400
300
200
I - CURRENT (mA)
100
0
050100150
I - FORWARD CURRENT STEADY STATE - mA
R
Io - AVERAGE RECTIFIED CURRENT - mA
T - AMBIENT TEMPERATURE ( C)
A
F
A
o
MMBD1401A-1405A, Rev. A
Page 4
Typical Characteristics (continued)
POWER DERATING CURVE
500
MMBD1401A / 1403A / 1404A / 1405A
High Voltage General Purpose Diode
(continued)
400
300
SOT-23 Pkg
200
100
D
P - POWER DISSIPATION (mW)
0
0 50 100 150 200
I - AVERAGE TEMPERATURE ( C)
O
DO-35 Pkg
o
MMBD1401A-1405A, Rev. A
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ CoolFET™ CROSSVOLT™ E2CMOS
TM
FACT™ FACT Quiet Series™
®
FAST FASTr™ GTO™ HiSeC™
ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™
UHC™ VCX™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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