Page 1
MMBD1201 / 1203 / 1204 / 1205
3
3
24
2
SOT-23
1
MMBD1201 24 MMBD1204A 27
MMBD1203 26 MMBD1205A 28
High Conductance Ultra Fast Diode
12
MARKING
Discrete POWER & Signal
Technologies
CONNECTION DIAGRAMS
1201
1204
3
2 NC
1
3
21
3
1203
21
3
1205
21
MMBD1201 / 1203 / 1204 / 1205
Sourced from Process 1P.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
Working Inverse Voltage 50 V
Average Rectified Current 200 mA
DC Forward Current 600 mA
Recurren t Peak Forward Current 700 mA
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range -55 to +150
Operating Junction Temperature 150
1.0
2.0
A
A
°
°
C
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
MMBD1201/1203/1204/1205*
P
D
R
θ
JA
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Total Dev ice Dissipation
Derate above 25°C
350
2.8
Thermal Resistan ce, Junction to Ambient 357
mW
mW/°C
C/W
°
ã 1997 Fairchild Semiconductor Corporation
Page 2
µ
High Conductance Ultra Fast Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
B
V
I
R
V
F
C
T
T
RR
Breakdown Voltage
I
= 100 µA
R
Reverse Current VR = 20 V
V
= 50 V
R
V
= 50 V, TA = 150°C
R
Forward Voltage IF = 1.0 mA
I
= 10 mA
F
= 100 mA
I
F
I
= 200 mA
F
I
= 300 mA
F
100 V
25
50
5.0
550
660
820
0.87
600
740
920
1.0
1.1
nA
nA
mV
mV
mV
Diode Capacitance VR = 0, f = 1.0 MHz 2.0 pF
Reverse Recovery Time IRR = 1.0 mA, IF = IR = 10 mA,
R
= 100
Ω
L
4.0 nS
A
V
V
Typical Characteristics
MMBD1201 / 1203 / 1204 / 1205
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
150
Ta= 25°C
140
130
120
R
R
V
V - REVERSE VOLTAGE (V)
110
1 2 3 5 10 20 30 50 100
I - REVERSE CURRENT (uA)
R
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
485
Ta= 25°C
450
400
350
300
250
F
F
V
V - FORWARD VOLTAGE (mV)
225
1 2 3 5 10 20 30 50 100
F
I - FORWARD CURRENT (uA)
REVERSE CURRE NT vs REVERSE VOLTAGE
IR - 10 to 100 V
Ta= 25°C
300
250
200
150
100
50
R
0
I - REVERSE CURRENT (nA)
10 20 30 50 70 100
GENERAL RULE: The Reverse Current of a diode will approximately
V - REVERSE VOLTAGE (V)
R
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
725
Ta= 25°C
700
650
600
550
500
F
F
V
V - FORWARD VOLTAGE (mV)
450
0.1 0.2 0.3 0.5 1 2 3 5 10
VF - 0.1 to 10 mA
F
I - FORWARD CURRENT (mA)
Page 3
Typical Characteristics (continued)
MMBD1201 / 1203 / 1204 / 1205
High Conductance Ultra Fast Diode
(continued)
FORWARD VOL TAGE vs FORWARD CURRENT
1.5
Ta= 25°C
1.4
1.2
1
0.8
F
F
V
V - FORWARD VOLTAGE (V)
0.6
10 20 30 50 100 200 300 500
REVERSE RECOVERY TIME vs REVERSE CURRENT
4
Ta= 25°C
3.5
3
2.5
2
1.5
REVERSE RECOVERY (nS)
1
10 20 30 40 50 60
IRR (Reverse Recovery Current) = 1.0 mA - Rloop = 100 Ohms
VF - 10 - 800 mA
I - FORWARD CURRENT (mA)
F
TRR - IR 10 mA vs 60 mA
REVERSE CURRENT (mA)
CAPACITANCE vs REVERSE VOLTAGE
VR - 0.0 to 15 V
1.3
Ta= 25°C
1.2
1.1
CAPACITANCE (pF)
1
02468101214
REVERSE VOLTAGE (V)
Average Rectified Current (Io) &
Forward Current (I ) versus
Ambient Temperature (T )
500
400
300
200
100
D
0
P - POWER DISSIPATION (mW)
0 50 100 150
I - FORWARD CURRENT STEADY STATE - mA
R
Io - AVERAGE RECTIFIED CURRENT - mA
T - AMBIENT TEMPERATURE ( C)
A
F
A
o
15
POWER DERAT I NG CURVE
500
400
300
SOT-23 Pkg
200
100
D
D
P - POWER DISSIPATION (mW)
P
0
0 50 100 150 200
I - AVERAGE TEMPERATURE ( C)
O
DO-35 Pkg
o
Page 4
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not intended to be an exhaustive list of all such trademarks.
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®
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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