The MM74C908 and MM74C918 are general purpose dual
high voltage drivers, each capable of sourcing a minimum of
250 mA at V
The MM74C908 and MM74C918 consist of two CMOS
NAND gates driving an emitter follower Darlington output to
achieve high current drive and high voltage capabilities. In
the ‘‘OFF’’ state the outputs can withstand a maximum of
b
30V across the device. These CMOS drivers are useful in
interfacing normal CMOS voltage levels to driving relays,
regulators, lamps, etc.
Connection Diagrams
OUT
e
V
b
3V, and T
CC
Dual-In-Line Package
MM74C908
MM74C908/MM74C918 Dual CMOS 30V Relay Driver
November 1990
Features
Y
Wide supply voltage range3V to 18V
Y
e
65§C.
J
High noise immunity0.45 VCC(typ.)
Y
Low output ‘‘ON’’ resistance8X (typ.)
Y
High voltage
Y
High current250 mA
b
30V
Order Number MM74C908
Top View
TL/F/5912– 1
Dual-In-Line Package
MM74C918
Order Number MM74C918
Top View
TL/F/5912– 2
TRI-STATEÉis a registered trademark of National Semiconductor Corporation.
C
1995 National Semiconductor CorporationRRD-B30M105/Printed in U. S. A.
TL/F/5912
Page 2
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Voltage at any Input Pin
b
0.3V to V
CC
a
0.3V
Voltage at any Output Pin32V
Operating Temperature Range
MM74C908/MM74C918
b
40§Ctoa85§C
Operating V
Absolute Maximum V
I
SOURCE
Storage Temperature Range (TS)
Lead Temperature (TL)
(Soldering, 10 seconds)260
Power Dissipation (PD)Refer to Maximum Power
Range4V to 18V
CC
CC
b
65§Ctoa150§C
Dissipation vs Ambient
Temperature Graph
500 mA
DC Electrical Characteristics Min/Max limits apply across temperature range, unless otherwise noted
*AC Parameters are guaranteed by DC correlated testing.
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.
Note 2: Capacitance is guaranteed by periodic testing.
Note 3: i
JA
Propagation DelayV
to a Logical ‘‘1’’C
Propagation DelayV
to a Logic ‘‘0’’C
Input Capacitance(Note 2)5.0pF
measured in free air with device soldered into printed circuit board.
e
CC
e
L
e
V
CC
e
C
L
e
CC
e
L
e
V
CC
e
C
L
5V, R
50 pF, T
10V, R
50 pF, T
5V, R
50 pF, T
10V, R
50 pF, T
e
50X,
L
e
25§C
A
e
50X,
L
e
25§C
A
e
50X,
L
e
25§C
A
e
50X,
L
e
25§C
A
150300ns
65120ns
2.010ms
4.020ms
2
Page 3
Typical Performance Characteristics
Maximum Power Dissipation
vs Ambient Temperature
AC Test Circuit
Typical I
vs Typical V
OUT
Maximum V
vs I
OUT
OUT
b
CC
V
OUT
Typical I
OUT
Typical I
Typical V
vs Typical V
OUT
Switching Time Waveforms
OUT
OUT
vs
TL/F/5912– 3
TL/F/5912– 4
e
e
t
t
20 ns
r
f
TL/F/5912– 5
3
Page 4
Power Considerations
Calculating Output ‘‘ON’’ Resistance (R
The output ‘‘ON’’ resistance, RON, is a function of the junction temperature, T
e
9(T
R
ON
, and is given by:
J
b
25) (0.008)a9(1)
J
and TJis given by:
e
a
T
T
P
J
A
where T
ance, and P
device. P
leakage currents, internal capacitance, switching, etc.)
e
A
DAV
consists of normal CMOS power terms (due to
DAV
,(2)
DAViJA
ambient temperature, i
is the average power dissipated within the
which are insignificant when compared to the power dissipated in the outputs. Thus, the output power term defines
the allowable limits of operation and includes both outputs,
A and B. P
P
is given by:
D
2
e
I
OA
R
ON
D
2
a
I
RON,(3)
OB
where IOis the output current, given by:
b
V
V
CC
e
I
O
is the load voltage.
V
L
L
a
R
R
ON
L
The average power dissipation, P
duty cycle:
2
e
P
I
DAV
RON(Duty CycleA)
OA
2
I
RON(Duty CycleB)
OB
where the duty cycle is the % time in the current source
state. Substituting equations (1) and (5) into (2) yields:
e
T
T
J
[
simplifying:
T
A
e
T
J
1b0.072 i
a
i
A
2
I
(Duty CycleA)aI
OA
a
7.2 i
[
JA
[
I
JA
OA
[
I
JA
OA
b
9(T
25) (0.008)a9
J
2
(Duty CycleA)aI
2
(Duty CycleA)aI
OB
Equations (1), (4), and (6b) can be used in an iterative method to determine the output current, output resistance and
junction temperature.
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