Page 1
MITSUBISHI LASER DIODES
p
p
)
µ
(
)
(
)
)
(
)
p
(perp
)
yp
,
,
,
p
g
(p
)
λpVop
y
η
y
ML4XX26 SERIES
FOR OPTICAL INFORMATION SYSTEMS
TYPE
NAME
ML40126N
ML44126N,ML44126R
FEATURES
ML4xx26 series is AlGaAs laser diodes which
provide a stable, single transverse mode ocillation
with emission wavelength of 785nm and standard
continuous light output of 5mW.
ML4xx26 are hermetically sealed devices having
the photodiode for optical output monitoring.
ML4xx26 is produced by the MOCVD crystal
growth method which is excellent in mass production
and characteristics uniformity.
ABSOLUTE MAXIMUM RATINGS (Note 1)
Reverse voltage (laser diode)VRL
VRD
Reverse voltage (Photodiode)
FEATURES
•
Output 5mW(CW)
• Built-in monitor photodiode
• Low droop
APPLICATION
•
Laser Beam Printing, Digital Copy
8CW
-
-
30
UnitRatingsConditionsParameterSymbol
mWLight output powerPo
V2
V
IFD
Tc
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime.As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Department.
Forward current (Photodiode)
Case temperature
Storage temperatureTstg
-
-
-
10
-40~ +60
-40~ +100
mA
°C
°C
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25°C)
mbol
Threshold currentIth
Io
θ//
θ⊥
Im
Im
Note2
ID
Ct
D
Note 2: Applicable to ML44126R and ML44126N
Note 3: RL=the load resistance of photodiode
Operation current
Slope efficienc
erating voltage
O
Peak wavelen
Beam divergence angle
Beam divergence angle
Monitoring output current
Dark current (Photodiode
arallel
endicular
Photodiode
th
CW,Po=5mW CW
Po=5mW 0.25
CW
Po=5mW
CW,Po=5mW
Po=5mW
CW
CW,Po=5mW, V
L=10Ω
R
RD=10V
V
RD=1V
Note3
MITSUBISHI
ELECTRIC
MInTest conditionsParameterS
-CW
-
770
8
22CW,Po=5mW
-
-
--%6CW,Po=3mWDroo
40
0.35
2
785
11
29
0.45
0.90
--
.
15
36
-
-
as of February '00
UnitMaxT
mA4025
mA70
mW/mA0.45
V2.5
nm800
°
°
mA
A0.5
F-7-VRD=5V, f=1MHzCapacitance (Photodiode
( 1 / 4 )
Page 2
OUTLINE DRAWINGS
ML40126N
MITSUBISHI LASER DIODES
ML4XX26 SERIES
FOR OPTICAL INFORMATION SYSTEMS
CASE
ML44126N
ML44126R
PD
ML40126N
PD
LD
CASE
LD
ML44126N
CASE
MITSUBISHI
ELECTRIC
PD
ML44126R
LD
as of February '00
( 2 / 4 )
Page 3
Typical Chracteristics
Po=5mW
Tc=10 25 40 50 60°C
5
MITSUBISHI LASER DIODES
ML4XX26 SERIES
FOR OPTICAL INFORMATION SYSTEMS
100
Tc=25°C
4
80
Po=5mW
θ//=11°
3
2
1
60
40
20
Relative Intensity (%)
CW
Light Output Power, Po (mW)
0
60 8020 100400
Operating Current, Iop (mA)
Light Output Power vs. Current (CW) Far-Filed-Patterns
810
0
Angle (deg.)
100
θ =29°
02040-40 60-20-60
CW
Peak Wavelength, λp (nm)
805
800
795
790
785
780
0 10203040506070
Case Temperature, Tc (°C)
Po=5mW
CW
10
Threshold C urrent, Ith (mA)
0 10203040506070
Case Temperature, Tc (°C)
Threshold Current vs. TemperaturePeak Wavelength vs. Temperature
MITSUBISHI
as of February '00
ELECTRIC
( 3 / 4 )
Page 4
MITSUBISHI LASER DIODES
Typical Chracteristics
ML40126N
ML4XX26 SERIES
FOR OPTICAL INFORMATION SYSTEMS
0.6
0.5
0.4
0.3
0.2
0.1
Moni to r C u rre nt , Im (mA)
0
0123456
Tc=25°C
CW
Light Output Power (mW)
Monitor Photodiode Current
793
Tc=25°C
Peak Wavelength, λp (nm )
792
791
790
789
788
012345678
CW
Light O utput Power, Po (mW)
Peak Wavelength vs. Light Output Power
MITSUBISHI
as of February '00
ELECTRIC
( 4 / 4 )
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