Page 1
MKI 50-06 A7
IGBT Modules
H-Bridge
Short Circuit SOA Capability
Square RBSOA
13
T1
Preliminary Data
1
2
T2
3
4
17
IGBTs
Symbol Conditions Maximum Ratings
V
CES
V
GES
I
C25
I
C80
RBSOA VGE = ±15 V; RG = 22 Ω; TVJ = 125°C I
t
SC
(SCSOA) non-repetitive
P
tot
TVJ = 25°C to 150°C 600 V
TC = 25°C 72 A
TC = 80°C 50 A
= 100 A
Clamped inductive load; L = 100 µH V
V
= V
CE
; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C 10 µs
CES
CM
CEK
TC = 25°C 225 W
Symbol Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
V
V
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
E
C
Q
R
CE(sat)
GE(th)
on
off
ies
Gon
thJC
VJ
IC = 50 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V
TVJ = 125°C 2.2 V
IC = 1 mA; VGE = V
V
= V
CE
CES; VGE
CE
= 0 V; TVJ = 25°C 0.6 mA
TVJ = 125°C 0.7 mA
VCE = 0 V; VGE = ± 20 V 200 nA
Inductive load, TVJ = 125°C
VCE = 300 V; IC = 50 A
VGE = ±15 V; RG = 22 Ω
VCE = 25 V; VGE = 0 V; f = 1 MHz 2800 pF
V
= 300V; VGE = 15 V; IC = 50 A 120 nC
CE
(per IGBT) 0.55 K/W
min. typ. max.
4.5 6.5 V
T5
D1
10
D2
11
12
±
20 V
≤ V
CES
D5
9
T6
D6
50 ns
60 ns
300 ns
30 ns
2.3 mJ
1.7 mJ
I
C25
V
CES
V
CE(sat) typ.
16
14
= 72 A
= 600 V
= 1.9 V
Features
• NPT IGBT technology
• low saturation voltage
• low switching losses
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
Advantages
• space savings
• reduced protection circuits
• package designed for wave soldering
Typical Applications
• motor control
- DC motor armature winding
- DC motor excitation winding
- synchronous motor excitation winding
• supply of transformer primary winding
- power supplies
- welding
- X-ray
- UPS
- battery charger
IXYS reserves the right to change limits, test conditions and dimensions.IXYS reserves the right to change limits, test conditions and dimensions.
225
1 - 4© 2002 IXYS All rights reserved
Page 2
MKI 50-06 A7
Diodes
Symbol Conditions Maximum Ratings
I
F25
I
F80
TC = 25°C 72 A
TC = 80°C 45 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 50 A; VGE = 0 V; TVJ = 25°C 1.6 1.8 V
TVJ = 125°C 1.3 V
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C 25 A
VR = 300 V; VGE = 0 V 90 ns
(per diode) 1.19 K/W
Module
Symbol Conditions Maximum Ratings
T
VJ
T
stg
V
ISOL
M
d
I
≤ 1 mA; 50/60 Hz 2500 V~
ISOL
Mounting torque (M5) 2.7 - 3.3 N m
-40...+150 °C
-40...+125 °C
Symbol Conditions Characteristic Values
min. typ. max.
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
Free Wheeling Diode (typ. at TJ = 125°C)
Thermal Response
IGBT (typ.)
Free Wheeling Diode (typ.)
V0 = 0.82 V; R0 = 28 m
V0 = 0.89 V; R0 = 8 m
C
= 0.201 J/K; R
th1
C
= 1.252 J/K; R
th2
C
= 0.116 J/K; R
th1
C
= 0.88 J/K; R
th2
Ω
Ω
= 0.42 K/W
th1
= 0.131 K/W
th2
= 0.973 K/W
th1
= 0.277 K/W
th2
R
pin-chip
d
S
d
A
R
thCH
Creepage distance on surface 6 mm
Strike distance in air 6 mm
with heatsink compound 0.02 K/W
5mΩ
Weight 180 g
Dimensions in mm (1 mm = 0.0394")
2 - 4© 2002 IXYS All rights reserved
Page 3
MKI 50-06 A7
150
A
120
I
C
VGE= 17V
15V
13V
90
60
30
TVJ = 25°C
0
0123456
V
CE
11V
9V
V
150
A
120
I
C
90
VGE= 17V
15V
13V
60
30
0
0123456
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
150
A
120
I
C
90
60
= 125°C
T
VJ
TVJ = 25°C
30
0
4 6 8 10 12 14 16
V
GE
VCE = 20V
V
90
A
75
I
F
60
45
30
15
0
0.0 0.5 1.0 1.5 2.0
V
V
CE
F
11V
9V
TVJ = 125°C
V
TVJ = 25°CTVJ = 125°C
V
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
20
V
15
V
GE
10
5
0
0 40 80 120 160
VCE = 300V
= 50A
I
C
Q
G
nC
50
40
A
t
I
RM
rr
30
20
10
I
RM
0
0 200 400 600 800 1000
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
TVJ = 125°C
V
I
-di/dt
= 300V
R
= 30A
F
A/µs
MWI5006A7
150
120
ns
90
60
30
0
3 - 4© 2002 IXYS All rights reserved
t
rr
Page 4
MKI 50-06 A7
10.0
mJ
7.5
E
on
5.0
VCE = 300V
= ±15V
V
GE
R
= 22Ω
I
C
G
= 125°C
T
VJ
A
2.5
E
on
0.0
04080120
t
t
d(on)
r
100
ns
75
50
25
0
4
mJ
3
E
t
off
2
1
V
= 300V
CE
= ±15V
V
GE
R
= 22Ω
G
= 125°C
T
VJ
0
0 40 80 120
A
I
C
t
t
f
E
d(off)
400
ns
off
300
t
200
100
0
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
E
t
d(off)
600
ns
off
400
t
200
4
t
mJ
E
on
3
V
= 300V
CE
= ±15V
V
2
GE
I
= 50A
C
= 125°C
T
VJ
d(on)
E
80
ns
on
t
r
60
t
40
3
mJ
E
off
2
V
= 300V
CE
= ±15V
V
1
GE
= 50A
I
C
= 125°C
T
VJ
1
0 102030405060
R
G
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
120
A
90
I
CM
60
30
RG = 22 Ω
= 125°C
T
VJ
0
0 100 200 300 400 500 600 700
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
t
f
20
Ω
0
0 102030405060
R
G
0
Ω
10
Z
K/W
1
thJC
diode
IGBT
0.1
0.01
0.001
0.0001
V
V
CE
0.00001 0.0001 0.001 0.01 0.1 1 10
single pulse
MWI5006A7
s
t
4 - 4© 2002 IXYS All rights reserved
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