Datasheet MJW16212 Datasheet (Motorola)

3–1

Motorola Bipolar Power Transistor Device Data





NPN Bipolar Power Deflection Transistor
For High and Very High Resolution Monitors

The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It
is specifically designed for use in horizontal deflection circuits for 20 mm diameter
neck, high and very high resolution, full page, monochrome monitors.

• 1500 Volt Collector–Emitter Breakdown Capability

• Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)

• Application Specific State–of–the–Art Die Design

• Fast Switching:

200 ns Inductive Fall Time (Typ)
2000 ns Inductive Storage Time (Typ)

• Low Saturation Voltage:

0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive

• Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — V

CES

• High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —

8.0 Volts (Min)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Breakdown Voltage

V

CES

1500

Vdc

Collector–Emitter Sustaining Voltage

V

CEO(sus)

650

Vdc

Emitter–Base Voltage

V

EBO

8.0

Vdc

RMS Isolation Voltage (2)
(for 1 sec, TA = 25_C, Per Fig. 14
Rel. Humidity < 30%) Per Fig. 15

V

ISOL

—
—

V

Collector Current — Continuous

Collector Current — Pulsed (1)

I

C

I

CM

10
15

Adc

Base Current — Continuous

Base Current — Pulsed (1)

I

B

I

BM

5.0
10

Adc

Maximum Repetitive Emitter–Base

Avalanche Energy

W (BER)

0.2

mJ

Total Power Dissipation @ TC = 25_C

Total Power Dissipation @ TC = 100_C

Derated above TC = 25_C

P

D

150

39

1.49

Watts

W/_C

Operating and Storage Temperature Range

TJ, T

stg

–55 to 125

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance — Junction to Case

R

θJC

0.67

_

C/W

Lead Temperature for Soldering Purposes

1/8″ from the case for 5 seconds

T

L

275

_

C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
(2) Proper strike and creepage distance must be provided.

Preferred devices are Motorola recommended choices for future use and best overall value.

SCANSWITCH and SWITCHMODE are trademarks of Motorola Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJW16212/D

  
  
  
  

 Motorola, Inc. 1995



POWER TRANSISTOR

10 AMPERES

1500 VOLTS – V

CES

50 AND 150 WATTS

*Motorola Preferred Device



CASE 340F–03

TO–247AE

REV 1

MJW16212

3–2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS (2)

Collector Cutoff Current (VCE = 1500 V, VBE = 0 V)

Collector Cutoff Current (VCE = 1200 V, VBE = 0 V)

I

CES

—
—

—
—

250

25

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

µAdc

Emitter–Base Leakage (VEB = 8.0 Vdc, IC = 0)

I

EBO

—

—

25

ÎÎÎ

ÎÎÎ

ÎÎÎ

µAdc

Emitter–Base Breakdown Voltage (IE = 1.0 mA, IC = 0)

V

(BR)EBO

8.0

11

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Emitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0)

V

CEO(sus)

650

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

ON CHARACTERISTICS (2)

Collector–Emitter Saturation Voltage (IC = 5.5 Adc, IB = 2.2 Adc)

Collector–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 400 mAdc)

V

CE(sat)

—
—

0.15

0.14

1.0

1.0

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage (IC = 5.5 Adc, IB = 2.2 Adc)

V

BE(sat)

—

0.9

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DC Current Gain (IC = 1.0 A, VCE = 5.0 Vdc)

DC Current Gain (IC = 10 A, VCE = 5.0 Vdc)

h

FE

—

4.0

24

6.0

—
10

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

DYNAMIC CHARACTERISTICS

Dynamic Desaturation Interval (IC = 5.5 A, IB1 = 2.2 A, LB = 1.5 µH)

t

ds

—

350

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ns

Output Capacitance

(VCE = 10 Vdc, IE = 0, f

test

= 100 kHz)

C

ob

—

180

350

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

Gain Bandwidth Product

(VCE = 10 Vdc, IC = 0.5 A, f

test

= 1.0 MHz)

f

T

—

2.75

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

MHz

Emitter–Base Turn–Off Energy

(EB

(avalanche)

= 500 ns, RBE = 22 Ω)

EB

(off)

—

35

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

µJ

Collector–Heatsink Capacitance — MJF16212 Isolated Package

(Mounted on a 1″ x 2″ x 1/16″ Copper Heatsink, VCE = 0, f

test

= 100 kHz)

C

c–hs

—

5.0

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Inductive Load (IC = 5.5 A, IB = 2.2 A), High Resolution Deflection

Simulator Circuit Table 2

Storage
Fall Time

t

sv
t

fi

—
—

2000

200

4000

350

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ns

(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%.

I

C

, COLLECTOR CURRENT (A)

VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 1. Maximum Forward Bias

Safe Operating Area

50

1

10

1

0.02
70

BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN

I

C

, COLLECTOR–EMITTER CURRENT (A)

0.1

7 20 1K

20

0.2

DC

TJ = 25°C

5 ms

10 µs

2

5

0.5

50 300 1500

IC/IB = 5
TJ

≤

100°C

0

VCE, COLLECTOR–EMITTER VOLTAGE (V)

900

Figure 2. Maximum Reverse Bias

Safe Operating Area

10

18

6

2

600 1200

100

0.05

0.01

1003 10 20030

MJH16212

14

2 300 5005 700

100

ns

II

SAFE OPERATING AREA

MJW16212

3–3

Motorola Bipolar Power Transistor Device Data

SAFE OPERATING AREA (continued)

FORWARD BIAS

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 1 is based on TC = 25_C; T

J(pk)

is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der­ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 1 may be found at any case tem­perature by using the appropriate curve on Figure 3.

At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita­tions imposed by second breakdown.

Figure 3. Power Derating

25

TC, CASE TEMPERATURE (

°

C)

0

45 85 125

0.6

POWER DERATING FACTOR

SECOND BREAKDOWN

DERATING

1

0.8

0.4

0.2

65

THERMAL

DERATING

105

REVERSE BIAS

For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc.

The safe level for these devices is specified as Reverse
Biased Safe Operating Area and represents the voltage–
current condition allowable during reverse biased turnoff.
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode. Figure 2
gives the RBSOA characteristics.

H.P. 214

OR EQUIV.

P.G.

0

≈

–35 V

50

500

1

µ

F

100

–V

2N5337

2N6191

+V

≈

11 V

100

0.02

µ

F

20

10 µF

0.02

µ

F

+ –

R

B1

R

B2

A

A

50

T

1

+V

0 V

–V

*I

B

*I

C

T.U.T.

L

MR856

V

clamp

V

CC

I

C

V

CE

I

B

I

B1

I

B2

I

C(pk)

V

CE(pk)

T1[

L

coil(ICpk

)

V

CC

Note: Adjust –V to obtain desired V

BE(off)

at Point A.

T1 adjusted to obtain I

C(pk)

V

(BR)CEO

L = 10 mH
RB2 = ∞
VCC = 20 Volts

RBSOA

L = 200 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for desired I

B1

*Tektronix

*P–6042 or
*Equivalent

+
–

Table 1. RBSOA/V

(BR)CEO(SUS)

Test Circuit

MJW16212

3–4

Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF)

f , TRANSITION FREQUENCY

τ

V

BE

, BASE–EMITTER VOLTAGE (V)

V

CE

, COLLECTOR–EMITTER VOLTAGE (V) V

CE

, COLLECTOR–EMITTER VOLTAGE (V)

Figure 4. Typical Collector–Emitter

Saturation Region

IB, BASE CURRENT (A)

0.7

0.1

.03

0.3

0.3

10 A

.05 1 2

4 5.5IC = 2

0.03

0.1 0.2 0.5

0.02

5

10

Figure 5. Typical Emitter–Base

Saturation Voltage

0.30.2 0.5

5

0.7

0.1

0.70.1 1 10

10

2

TJ = 25°C

2 3 5 7

IC, COLLECTOR CURRENT (A)

IC/IB = 5
TJ = 100

°

C

0.3

0.5

0.07

0.2

0.05

0.01

3

7

2
1

3

7

1

0.2

3

0.5

IC, COLLECTOR CURRENT (A)

Figure 6. Typical Collector–Emitter

Saturation Voltage

0.5

3

0.2

5

10

1

0.1

7

0.3

2

0.7

0.5 32 50.7 1

0.1 0.2 0.3

7

IC, COLLECTOR CURRENT (A)

Figure 7. Typical Transition Frequency

VCE = 10 V
f

(test)

= 1 MHz

TC = 25°C

0 1 2 3 4 65

5

2

0

4

3

1

Figure 8. Typical Capacitance

10000

VR, REVERSE VOLTAGE (V)

C

ib

1

500

20

1

7 50 300

1000

50

2

2000

100

5000

200

10

3 10 100

705 30 200 1000

5

2 20 500

f

test

= 1 MHz

8

.02

.01 5 7

10

= 25°C

IC/IB = 10
TJ = 100

°

C

= 25°C

IC/IB = 5
TJ = 100

°

C

= 25°C

IC/IB = 10
TJ = 100

°

C

= 25°C

10

C

ob

MJW16212

3–5

Motorola Bipolar Power Transistor Device Data

DYNAMIC DESATURATIION

The SCANSWITCH series of bipolar power transistors are
specifically designed to meet the unique requirements of hor­izontal deflection circuits in computer monitor applications.
Historically, deflection transistor design was focused on mini­mizing collector current fall time. While fall time is a valid
figure of merit, a more important indicator of circuit perfor­mance as scan rates are increased is a new characteristic,
“dynamic desaturation.” In order to assure a linear collector
current ramp, the output transistor must remain in hard satu­ration during storage time and exhibit a rapid turn–off transi­tion. A sluggish transition results in serious consequences.
As the saturation voltage of the output transistor increases,

the voltage across the yoke drops. Roll off in the collector
current ramp results in improper beam deflection and distor­tion of the image at the right edge of the screen. Design
changes have been made in the structure of the SCANS­WITCH series of devices which minimize the dynamic desa­turation interval. Dynamic desaturation has been defined in
terms of the time required for the VCE to rise from 1.0 to

5.0 volts (Figures 9 and 10) and typical performance at opti­mized drive conditions has been specified. Optimization of
device structure results in a linear collector current ramp, ex­cellent turn–off switching performance, and significantly low­er overall power dissipation.

U2

MC7812

V

I

V

O

G
N
D

+

+

+

+

+24 V

C1

100

µ

F

C2

10

µ

F

C3

10

µ

F

R7

2.7 k

R8

9.1 k

R9

470

R10

47

C5

0.1

C4

0.005

R2

R510R3250

R6
1 k

R12
470
1 W

D1

MUR110

T1

LB

R4
22

Q4

DUT

V

CE

CY

LY

C6

100

µ

F

R5
1 k

(IC)

(IB)

Q5

MJ11016

Q2

MJ11016

Q3

MJE

15031

R11
470
1 W

100 V

D2

MUR460

U1

MC1391P

%

OSC V

CC

OUT

GND

7 6

8 1

2

(DC)

BS170

Q1

SYNC

Table 2. High Resolution Deflection Application Simulator

R1
1 k

6.2 V

T1:Ferroxcube Pot Core #1811 P3C8 LB = 1.5 µH

Primary/Sec. Turns Ratio = 18:6 CY = 0.01 µF
Gapped for LP = 30 µH LY = 13 µH

V

CE

, COLLECTOR–EMITTER VOLTAGE (V)

I

B

, BASE CURRENT (A)

Figure 9. Deflection Simulator Circuit Base

Drive Waveform

TIME (2 µs/DIV)

IB1 = 1.3 A

Figure 10. Definition of Dynamic

Desaturation Measurement

TIME (ns)

t

ds

DYNAMIC DESATURATION TIME
IS MEASURED FROM VCE = 1 V
TO VCE = 5 V

1

4

5

0

3

2

0 6 84

2 10

IB2 = 4.9 A

MJW16212

3–6

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (A)

Figure 11. Typical Resistive Storage Time

t

s

, RESISTIVE STORAGE TIME ( s)

15

5

2

3

7

1 2 753

IC, COLLECTOR CURRENT (A)

Figure 12. Typical Resistive Fall Time

t

f

, RESISTIVE FALL TIME ( s)

700

100

300

1500

2 3 5 71 10

200

500

β

f

= 5

TJ = 25

°

C

µ

µ

IB2 = I

B1

IB2 = 2 (IB1)

β

f

= 5

TJ = 25

°

C

IB2 = I

B1

IB2 = 2 (IB1)

10

1000

1

10 15 15

ts and t

f

+15

150

Ω

100

Ω

100 µF

MTP8P10

MPF930

MPF930

MUR105

MJE210

150

Ω

500 µF

V

off

50

Ω

+10 V

MTP12N10

MTP8P10

R

B1

R

B2

A

1

µ

F

1

µ

F

T.U.T.

*I

C

*I

B

A

R

L

V

CC

V

(off)

adjusted
to give specified
off drive

V

CC

250 V

R

L

28 Ω

I

C

5.5 A

I

B1

1.1 A

I

B2

Per Spec

R

B1

3.3 Ω

R

B2

Per Spec

Table 3. Resistive Load Switching

t, TIME (ms)

0.01
1 100.1

1

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

R

θ

JC

(t) = r(t) R

θ

JC

R

θ

JC

= 0.7

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

SINGLE PULSE

RESISTANCE (NORMALIZED)

Figure 13. Thermal Response

0.5

D = 0.5

100 1000 10000

0.2

0.1

MJW16212

3–7

Motorola Bipolar Power Transistor Device Data

EMITTER–BASE TURN–OFF ENERGY, EB

(off)

Emitter–base turn–off energy is a n ew specification
included o n the S CANSWITCH d ata s heets. Typical
techniques for driving horizontal outputs rely on a pulse
transformer to supply forward base current, and a turnoff net­work that includes a series base inductor to limit the rate of
transition from forward to reverse. An alternate drive scheme
has been used to characterize the SCANSWITCH series of
devices (see Figure 2). This circuit ramps the base drive to
eliminate the heavy overdrive at the beginning of the collec­tor current ramp and underdrive just prior to turn–off ob­served in typical drive topologies. This high performance

drive has two additional important advantages. First, the con­figuration of T1 allows Lb to be placed outside the path of for­ward base current making it unnecessary to expend energy
to reverse the current flow as in a series based inductor. Se­cond, there is no base resistor to limit forward base current
and hence no power loss associated with setting the value of
the forward base current. The ramp generating process
stores rather than dissipates energy. Tailoring the amount of
energy stored in T1 to the amount of energy, EB

(off)

, that is
required to turn the output transistor off results in essentially
lossless operation. [Note: B+ and the primary inductance of
T1 (LP) are chosen such that 1/2LPl

b

2

= EB

(off)

.]

Figure 14. Screw or Clip Mounting Position

for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

LEADS

HEATSINK

0.099” MIN

Figure 15. Screw or Clip Mounting Position

for Isolation Test Number 2

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

MOUNTED

FULLY ISOLATED

PACKAGE

0.110” MIN

TEST CONDITIONS FOR ISOLATION TESTS* (MJF16212 ONLY)

4–40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in.lbs is sufficient to provide maximum power dissipation capability . The compression washer helps to maintain a con­stant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in.lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in.lbs without adversely affecting the pack­age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in.lbs of mounting torque under any mounting conditions.

Figure 16. Typical Mounting Techniques*

Figure 16a. Screw–Mounted Figure 16b. Clip–Mounted

MOUNTING INFORMATION** (MJF16212 ONLY)

**For more information about mounting power semiconductors see Application Note AN1040.

MJW16212

3–8

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 340F–03

TO–247AE

ISSUE E

DIMAMIN MAX MIN MAX

INCHES

20.40 20.90 0.803 0.823

MILLIMETERS

B 15.44 15.95 0.608 0.628
C 4.70 5.21 0.185 0.205
D 1.09 1.30 0.043 0.051
E 1.50 1.63 0.059 0.064
F 1.80 2.18 0.071 0.086
G 5.45 BSC 0.215 BSC
H 2.56 2.87 0.101 0.113
J 0.48 0.68 0.019 0.027
K 15.57 16.08 0.613 0.633
L 7.26 7.50 0.286 0.295
P 3.10 3.38 0.122 0.133
Q 3.50 3.70 0.138 0.145
R 3.30 3.80 0.130 0.150
U 5.30 BSC 0.209 BSC
V 3.05 3.40 0.120 0.134

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

R

P

A

K

V

F

D

G

U

L

E

0.25 (0.010)MT B

M

0.25 (0.010)MY Q

S

J

H

C

4

1 2 3

–T–

–B–

–Y–

–Q–

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MJW16212/D

*MJW16212/D*

◊