Page 1
1
Motorola Bipolar Power Transistor Device Data
1 kV SWITCHMODE Series
These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. T hey a re particularly s uited f or
line–operated switchmode applications.
Typical Applications: Features:
• Switching Regulators • Collector–Emitter Voltage — V
CEV
= 1000 Vdc
• Inverters • Fast Turn–Off Times
• Solenoids 50 ns Inductive Fall Time — 100_C (Typ)
• Relay Drivers 90 ns Inductive Crossover Time — 100_C (Typ)
• Motor Controls 900 ns Inductive Storage Time — 100_C (Typ)
• Deflection Circuits • 100_C Performance Specified for:
Reverse–Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
• Extended FBSOA Rating Using Ultra–fast Rectifiers
• Extremely High RBSOA Capability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
500
Vdc
Collector–Emitter Voltage
V
CEV
1000
Vdc
Emitter–Base Voltage
V
EB
6
Vdc
Collector Current—
Continuous
— Peak
(1)
I
C
I
CM
15
20
Adc
Base Current — Continuous
— Peak
(1)
I
B
I
BM
10
15
Adc
Total Power Dissipation
@ TC = 25_C
@ TC = 100_C
Derate above TC = 25_C
P
D
135
54
1.09
Watts
W/_C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to 150
I
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.92
_
C/W
Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
T
L
275
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cyclev 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJW16010A/D
Motorola, Inc. 1995
POWER TRANSISTORS
15 AMPERES
500 VOLTS
125 AND 175 WATTS
*Motorola Preferred Device
CASE 340F–03
TO–247AE
REV 3
Page 2
MJW16010A
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0)
V
CEO(sus)
500
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current
(V
CEV
= 1000 Vdc, V
BE(off)
= 1.5 Vdc)
(V
CEV
= 1000 Vdc, V
BE(off)
= 1.5 Vdc, TC = 100_C)
I
CEV
—
—
0.003
0.020
0.15
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Collector Cutoff Current
(VCE = 1000 Vdc, RBE = 50 Ω, TC = 100_C)
I
CER
—
0.020
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
Emitter Cutoff Current
(VEB = 6 Vdc, IC = 0)
I
EBO
—
0.005
0.15
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
I
S/b
See Figure 14a or 14b
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 15
ON CHARACTERISTICS
(1)
Collector–Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
(IC = 10 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 2 Adc, TC = 100_C)
V
CE(sat)
—
—
—
0.25
0.45
0.60
0.7
1
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2 Adc)
(IC = 10 Adc, IB = 2 Adc, TC = 100_C)
V
BE(sat)
—
—
1.2
1.2
1.5
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
DC Current Gain
(IC = 15 Adc, VCE = 5 Vdc)
h
FE
5
8
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f
test
= 1 kHz)
C
ob
—
—
400
ÎÎÎ
ÎÎÎ
ÎÎÎ
pF
SWITCHING CHARACTERISTICS
Inductive Load (Table 1)
Storage Time
t
sv
—
900
2000
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time
_
C)
t
fi
—
50
250
ÎÎÎ
ÎÎÎ
ÎÎÎ
Crossover Time
(IC = 10 Adc,
IB1 = 1.3 Adc,
_
C)
t
c
—
90
300
ÎÎÎ
ÎÎÎ
ÎÎÎ
Storage Time
IB1 = 1.3 Adc,
V
BE(off)
= 5 Vdc,
t
sv
—
1100
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time
V
CE(pk)
= 400 Vdc)
_
C)
t
fi
—
70
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
Crossover Time
_
C)
t
c
—
120
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
Resistive Load (Table 2)
Delay Time
t
d
—
25
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
Rise Time
C
= 10 Adc,
B2
= 2.6 Adc,
t
r
—
325
600
ÎÎÎ
ÎÎÎ
ÎÎÎ
Storage Time
(IC = 10 Adc,
VCC = 250 Vdc,
(IB2 = 2.6 Adc,
RB2 = 1.6 Ω)
t
s
—
1300
3000
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time
IB1 = 1.3 Adc,
PW = 30 µs,
t
f
—
175
400
ÎÎÎ
ÎÎÎ
ÎÎÎ
Storage Time
v
2%)
t
s
—
700
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
Fall Time
v
2%)
(V
BE(off)
= 5 Vdc)
t
f
—
80
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
(1) Pulse Test: PW = 300 µs, Duty Cycle v 2%.
(TJ = 100
(TJ = 150
(I
(I
Duty Cycle
ns
ns
Page 3
MJW16010A
3
Motorola Bipolar Power Transistor Device Data
0.15
IC, COLLECTOR CURRENT (AMPS)
0.2 1
1.5
0.5
10
IB, BASE CURRENT (AMPS)
5
2
1
0.5
0.2
0.1 0.15
IC/IB = 10
TJ = 25
°
C
0.2
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
3
0.2 0.3 0.5 1 2 5 10 20
30
10
7
Figure 2. Collector–Emitter Saturation Region
0.15
IC, COLLECTOR CURRENT (AMPS)
0.05
0.3 1
2
0.5
0.3
50
h
FE
, DC CURRENT GAIN
5
VCE = 5 V
3 5 10 15
Figure 3. Collector–Emitter Saturation Region
50.50.01 0.02 0.05 0.2 0.5 102 50.1
Figure 4. Base–Emitter Saturation Region
Figure 5. Capacitance
5
3
1
10 k
1
VR, REVERSE VOLTAGE (VOLTS)
10
10
2 k
100 850
20
15 A
IC = 1 A
TC = 25°C
C
ib
5 A
TJ = 100°C
–55°C
25°C
20
23
1
2 15
0.1
0.2
0.1
IC/IB = 5
TJ = 25
°
C
IC/IB = 10
TJ = 100
°
C
0.5
1
0.3
0.2
IC/IB = 10
TJ = 25
°
C
IC/IB = 10
TJ = 100
°
C
5 k
1 k
3 k
50
100
200
300
500
0.3 0.5 2 5 2030 50 500300
0.3 3 10
10 A
C
ob
TYPICAL STATIC CHARACTERISTICS
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
V
, BASE–EMITTER VOLTAGE (VOLTS)
BE
V
C, CAPACITANCE (pF)
Page 4
MJW16010A
4
Motorola Bipolar Power Transistor Device Data
1500
1.5
5000
t
c
, CROSSOVER TIME (ns) t
fi
, COLLECTOR CURRENT FALL TIME (ns)
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Storage Time Figure 7. Storage Time
, STORAGE TIME (ns)t
sv
t
fi
, COLLECTOR CURRENT FALL TIME (ns)t
c
, CROSSOVER TIME (ns)
IC, COLLECTOR CURRENT (AMPS)
2 3 5 7 15
5000
3000
2000
1000
500
100
, STORAGE TIME (ns)t
sv
1.5
200
1000
IC, COLLECTOR CURRENT (AMPS)
1000
500
200
100
50
10
1.5
20
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
1500
1000
500
300
200
15
100
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Collector Current Fall Time Figure 9. Collector Current Fall Time
Figure 10. Crossover Time Figure 11. Crossover Time
V
BE(off)
= 0 V
5 V
IC/IB1 = 5, TC = 75°C, V
CE(pk)
= 400 V IC/IB1 = 10, TC = 75°C, V
CE(pk)
= 400 V
0.07
300
0.05
10 2 3 5 7 15
3000
2000
1000
500
100
1.5
200
700
300
0.05
10
300
2 3 5 7 1510
500
200
100
50
10
1.5
20
300
2 3 5 7 1510
20
50
2 3 5 7 1510
1.5
1000
500
300
200
15
100
20
50
2 3 5 7 1510
2 V
V
BE(off)
= 0 V
5 V
2 V
V
BE(off)
= 0 V
5 V
2 V
V
BE(off)
= 0 V
5 V
2 V
V
BE(off)
= 0 V
5 V
2 V
V
BE(off)
= 0 V
5 V
2 V
TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS
Page 5
MJW16010A
5
Motorola Bipolar Power Transistor Device Data
+15
150
Ω
100
Ω
100 µF
MTP8P10
MPF930
MPF930
MUR105
MJE210
150
Ω
500 µF
V
off
50
Ω
+10
MTP12N10
MTP8P10
R
B1
R
B2
A
1
µ
F
1
µ
F
Drive Circuit
*Tektronix AM503
*P6302 or Equivalent
Scope — Tektronix
7403 or Equivalent
T1[
L
coil(ICpk
)
V
CC
Note: Adjust V
off
to obtain desired V
BE(off)
at Point A.
T1 adjusted to obtain I
C(pk)
T
1
+V
–V
0 V
A
*I
B
*I
C
L
T.U.T.
1N4246GP
V
clamp
V
CC
I
C(pk)
V
CE(pk)
V
CE
I
B
I
C
I
B1
I
B2
V
CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
I
C(pk)
= 100 mA
Inductive Switching
L = 200 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for desired I
B1
RBSOA
L = 200 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for desired I
B1
Table 1. Inductive Load Switching
I
B2
, REVERSE BASE CURRENT (AMPS)
Figure 12. Inductive Switching Measurements Figure 13. Peak Reverse Base Current
V
BE(off)
, REVERSE BASE VOLTAGE (VOLTS)
0
10
8
7
6
IB1 = 2 A
0 1 2 3 5
IC = 10 A
TC = 25
°
C
t
fi
t
rv
t, TIME
I
C
90% I
B1
I
C(pk)
V
CE(pk)
90% V
CE(pk)
90% I
C(pk)
10% V
CE(pk)
10%
I
C(pk)
2% I
C
I
B
t
sv
t
ti
t
c
V
CE
9
4
3
5
2
1
4
1 A
td and t
r
ts and t
f
H.P. 214
OR
EQUIV.
P.G.
50
RB = 8.5
Ω
*I
B
*I
C
T.U.T.
R
L
V
CC
V
in
0 V
≈
11 V
tr
≤
15 ns
*Tektronix AM503
*P6302 or Equivalent
V
CC
250 Vdc
R
L
25 Ω
I
C
10 A
I
B
1.3 A
+15
150
Ω
100
Ω
100 µF
MTP8P10
MPF930
MPF930
MUR105
MJE210
150
Ω
500 µF
V
off
50
Ω
+10 V
MTP12N10
MTP8P10
R
B1
R
B2
A
1
µ
F
1 µF
T.U.T.
*I
C
*I
B
A
R
L
V
CC
V
(off)
adjusted
to give specified
off drive
V
CC
250 V
I
C
10 A
I
B1
1.3 A
I
B2
Per Spec
R
B1
11.5 Ω
R
B2
Per Spec
R
L
25 Ω
Table 2. Resistive Load Switching
Page 6
MJW16010A
6
Motorola Bipolar Power Transistor Device Data
30
0.03
10
5
1
10
0.5
0.2
0.1
0.05
100 1000
3
20
0.3
Figure 14. Maximum Rated Forward Biased
Safe Operating Area
1
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
REGION II —
EXPANDED FBSOA USING
MUR8100 ULTRA–FAST
RECTIFIER, SEE FIGURE 17
TC = 25°C
dc
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0
1000
16
12
8
4
0 200 400
Figure 15. Maximum Reverse Biased
Safe Operating Area
IC/IB1 ≥ 4
TJ
≤
100°C
POWER DERATING FACTOR (%)
100
0
TC, CASE TEMPERATURE (
°
C)
0
40 200
80
60
40
20
80 120 160
Figure 16. Power Derating
600 800
V
BE(off)
= 0 V
V
BE(off)
= 5 V
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
100
ns
II
10µs
1 ms
GUARANTEED OPERATING AREA INFORMATION
Figure 17. Switching Safe Operating Area
+15
150
Ω
100 µF
MTP8P10
MPF930
MPF930
MUR105
MJE210
150
Ω
500 µF
V
off
50
Ω
+10
MTP12N10
R
B1
R
B2
1
µ
F
1
µ
F
100
Ω
MTP8P10
MUR105
MUR1100
T.U.T.
MUR8100
VCE (1000 V MAX)
10
µ
F
10 mH
Note: Test Circuit for Ultra–fast FBSOA
Note: RB2 = 0 and V
Off
= –5 Volts
Page 7
MJW16010A
7
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1
0.01
0.01
0.7
0.2
0.1
0.05
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
0.05 1 2 5 10 20 50 100 200 500
R
θ
JC
(t) = r(t) R
θ
JC
R
θ
JC
= 1 or 0.92
°
CW
T
J(pk)
– TC = P
(pk) Rθ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
D = 0.5
0.2
0.03
0.02
SINGLE PULSE
0.1
0.1 0.50.2
RESISTANCE (NORMALIZED)
1000
Figure 18. Thermal Response
0.5
0.3
0.07
0.03
0.03 0.3 3 30 3000.02
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figures 14a and 14b is based on TC = 25_C;
T
J(pk)
is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable current
at the voltages shown on Figures 14a and 14b may be found
at any case temperature by using the appropriate curve on
Figure 16.
T
J(pk)
may be calculated from the data in Figure 18. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Biased Safe Operating Area
and represents the voltage–current condition allowable during reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 15 gives the RBSOA characteristics.
SWITCHMODE DESIGN CONSIDERATIONS
1. FBSOA —
Allowable dc power dissipation in bipolar power transistors
decreases dramatically with increasing collector–emitter
voltage. A transistor which safely dissipates 100 watts at
10 volts will typically dissipate less than 10 watts at its rated
V
CEO(sus)
. From a power handling point of view, current and
voltage are not interchangeable (see A pplication Note
AN875).
2. TURN–ON —
Safe turn–on load line excursions are bounded by pulsed
FBSOA curves. The 10 µs curve applies for resistive loads,
most capacitive loads, and inductive loads that are clamped
by standard or fast recovery rectifiers. Similarly, the 100 ns
curve applies to inductive loads which are clamped by ultra–
fast recovery rectifiers, and are valid for turn–on crossover
times less than 100 ns (see Application Note AN952).
At voltages above 75% of V
CEO(sus)
, it is essential to provide the transistor with an adequate amount of base drive
VERY RAPIDLY at turn–on. More specifically, safe operation
according to the curves is dependent upon base current rise
time being less than collector current rise time. As a general
rule, a base drive compliance voltage in excess of 10 volts is
required t o meet this condition (see Application Note
AN875).
3. TURN–OFF —
A bipolar transistor’s ability to withstand turn–off stress is
dependent upon its forward base drive. Gross overdrive violates the RBSOA curve and risks transistor failure. For this
reason, circuits which use fixed base drive are often more
likely to fail at light loads due to heavy overdrive (see Application Note AN875).
4. OPERATION ABOVE V
CEO(sus)
—
When bipolars are operated above collector–emitter
breakdown, base drive is crucial. A rapid application of adequate forward base current is needed for safe turn–on, as is
a stiff negative bias needed for safe turn–off. Any hiccup in
the base–drive circuitry that even momentarily violates either
of these conditions will likely c ause the transistor to fail.
Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp
input signal (see Application Note AN952).
Page 8
MJW16010A
8
Motorola Bipolar Power Transistor Device Data
SWITCHMODE III DESIGN CONSIDERATIONS (Cont.)
5. RBSOA —
Reverse Biased Safe Operating Area has a first order dependency on circuit configuration and drive parameters. The
RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note AN951).
6. DESIGN SAMPLES —
Transistor parameters tend to vary much more from wafer
lot to wafer lot, over long periods of time, than from one de-
vice to the next in the same wafer lot. For design evaluation
it is advisable to use transistors from several different date
codes.
7. BAKER CLAMPS —
Many unanticipated pitfalls can be avoided by using Baker
Clamps. MUR105 and MUR1100 diodes are recommended
for base drives less than 1 amp. Similarly, MUR405 and
MUR4100 types are well–suited for higher drive r equirements (see Article Reprint AR131).
Page 9
MJW16010A
9
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 340F–03
ISSUE E
DIMAMIN MAX MIN MAX
INCHES
20.40 20.90 0.803 0.823
MILLIMETERS
B 15.44 15.95 0.608 0.628
C 4.70 5.21 0.185 0.205
D 1.09 1.30 0.043 0.051
E 1.50 1.63 0.059 0.064
F 1.80 2.18 0.071 0.086
G 5.45 BSC 0.215 BSC
H 2.56 2.87 0.101 0.113
J 0.48 0.68 0.019 0.027
K 15.57 16.08 0.613 0.633
L 7.26 7.50 0.286 0.295
P 3.10 3.38 0.122 0.133
Q 3.50 3.70 0.138 0.145
R 3.30 3.80 0.130 0.150
U 5.30 BSC 0.209 BSC
V 3.05 3.40 0.120 0.134
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
R
P
A
K
V
F
D
G
U
L
E
0.25 (0.010)MT B
M
0.25 (0.010)MY Q
S
J
H
C
4
1 2 3
–T–
–B–
–Y–
–Q–
Page 10
MJW16010A
10
Motorola Bipolar Power Transistor Device Data
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the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
MJW16010A/D
*MJW16010A/D*
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