Datasheet MJL21193, MJL21193G, MJL21194, MJL21194G Datasheet (ON Semiconductor)

MJL21193, MJL21194

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Preferred Device

Silicon Power Transistors

The MJL21193 and MJL21194 utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain −

hFE= 25 Min @ IC

= 8 Adc

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector−Emitter Voltage − 1.5 V

Collector Current − Continuous

ОООООООООО

Peak (Note 1)

Base Current − Continuous

Total Power Dissipation @ TC = 25_C

ОООООООООО

Derate above 25_C

Operating and Storage Junction
Temperature Range

ОООООООООО

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%

Symbol

V

CEO

V

CBO

V

EBO

V

CEX

I

C

Î

I

B

P

D

Î

TJ, T

stg

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Symbol

R

q

JC

Value

250

400

5

400

16
30

ÎÎ

5

200

ÎÎ

1.43

−65 to
+ 150

ÎÎ

Max

0.7

Unit

Vdc

Vdc

Vdc

Vdc

Adc

Î

Adc

W

Î

W/_C

_C

Î

Unit

_C/W

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16 AMPERE COMPLEMENTARY

SILICON POWER

TRANSISTORS

250 VOLTS, 200 WATTS

MARKING
DIAGRAM

MJL2119x
AYYWWG

TO−3PBL

(TO−264)

CASE 340G

x = 3 or 4
A = Assembly Location
YY = Year
WW = Work Week
G= Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

MJL21193 TO−264 25 Units / Rail

MJL21193G TO−264

25 Units / Rail

(Pb−Free)

MJL21194 TO−264 25 Units / Rail

MJL21194G TO−264

25 Units / Rail

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

†

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

January, 2007 − Rev. 5

Preferred devices are recommended choices for future use

and best overall value.

1 Publication Order Number:

MJL21193/D

MJL21193, MJL21194

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

= 100 mAdc, IB = 0)

(I

C

Collector Cutoff Current

= 200 Vdc, IB = 0)

(V

CE

Emitter Cutoff Current

(VCE = 5 Vdc, IC = 0)

Collector Cutoff Current

(VCE = 250 Vdc, V

BE(off)

= 1.5 Vdc)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)

Base−Emitter On Voltage

(IC = 8 Adc, VCE = 5 Vdc)

Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)

DYNAMIC CHARACTERISTICS

Total Harmonic Distortion at the Output

V

= 28.3 V, f = 1 kHz, P

RMS

LOAD

= 100 W

RMS

h

FE

unmatched

(Matched pair hFE = 50 @ 5 A/5 V) hFE

matched

Current Gain Bandwidth Product

(IC = 1 Adc, VCE = 10 Vdc, f

= 1 MHz)

test

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

= 1 MHz)

test

Symbol Min Typ Max Unit

V

CEO(sus)

I

CEO

I

EBO

I

CEX

I

S/b

h

V

BE(on)

V

CE(sat)

T

f

C

FE

HD

T

ob

250 − − Vdc

− − 100

− − 100

− − 100

mAdc

mAdc

mAdc

Adc

4.0

2.25

25

8

−

−

−

−

−

−

75

−

− − 2.2 Vdc

Vdc

−

−

−

−

−

−

0.8

0.08

1.4
4

−

−

4 − − MHz

− − 500 pF

%

PNP MJL21193

6.5
VCE = 10 V

6.0

5.5

5 V

5.0

4.5

4.0

TJ = 25°C

3.5

f

= 1 MHz

test

T

3.0

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

1.0 100.1

IC COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain Bandwidth Product

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

T

0

f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

Figure 2. Typical Current Gain Bandwidth Product

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2

TJ = 25°C
f

= 1 MHz

test

NPN MJL21194

10 V

VCE = 5 V

1.0 100.1

IC COLLECTOR CURRENT (AMPS)

1000

MJL21193, MJL21194

TYPICAL CHARACTERISTICS

PNP MJL21193 NPN MJL21194

1000

, DC CURRENT GAIN

FE

h

1000

, DC CURRENT GAIN

FE

h

100

100

10

TJ = 100°C

25°C

−25 °C

VCE = 20 V

TJ = 100°C

25°C

−25 °C

IC COLLECTOR CURRENT (AMPS)

100

, DC CURRENT GAIN

FE

h

VCE = 20 V

100101.00.1

10

IC COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V

VCE = 5 V

PNP MJL21193

TJ = 100°C

25°C

−25 °C

1000

100

, DC CURRENT GAIN

FE

h

VCE = 20 V

NPN MJL21194

TJ = 100°C

25°C

−25 °C

100101.00.1

, COLLECTOR CURRENT (A)

10

IC COLLECTOR CURRENT (AMPS)

Figure 5. DC Current Gain, V

= 5 V Figure 6. DC Current Gain, VCE = 5 V

CE

100101.00.1

PNP MJL21193

30

25

20

15

10

C

I

5.0

0

0

5.0 10 15 20 25

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.5 A
IB = 2 A

1 A

0.5 A

TJ = 25°C

Figure 7. Typical Output Characteristics

, COLLECTOR CURRENT (A)
I

10

IC COLLECTOR CURRENT (AMPS)

100101.00.1

NPN MJL21194

35

30

25

20

15

10

C

5.0

0

0

5.0 10 15 20 25

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

IB = 2 A

1.5 A

1 A

0.5 A

TJ = 25°C

Figure 8. Typical Output Characteristics

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3

3.0

2.5

2.0

TJ = 25°C
I

= 10

C/IB

MJL21193, MJL21194

TYPICAL CHARACTERISTICS

PNP MJL21193 NPN MJL21194

1.4

TJ = 25°C

1.2
IC/IB = 10

1.0

V

0.8

BE(sat)

SATURATION VOLTAGE (VOLTS)

, BASE−EMITTER VOLTAGE (VOLTS)

BE(on)

V

1.5

1.0

0.5

0

10

1.0
VCE = 20 V (SOLID)

0.1

V

BE(sat)

V

CE(sat)

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical Saturation Voltages

PNP MJL21193 NPN MJL21194

TJ = 25°C

VCE = 5 V (DASHED)

IC, COLLECTOR CURRENT (AMPS)

0.6

0.4

SATURATION VOLTAGE (VOLTS)

0.2

100101.00.1

0

IC, COLLECTOR CURRENT (AMPS)

V

CE(sat)

100101.00.1

Figure 10. Typical Saturation Voltages

10

TJ = 25°C

VCE = 20 V (SOLID)

1.0

, BASE−EMITTER VOLTAGE (VOLTS)

BE(on)

V

100101.00.1

0.1

IC, COLLECTOR CURRENT (AMPS)

VCE = 5 V (DASHED)

100101.00.1

Figure 11. Typical Base−Emitter Voltage

100

1 SEC

10

1.0

, COLLECTOR CURRENT (AMPS)

C

I

0.1

1.0 10 100 1000

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC − VCE lim­its of the transistor that must be observed for reliable opera­tion; i.e., the transistor must not be subjected to greater dis­sipation than the curves indicate.

The data of Figure 13 is based on T
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break­down.

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4

Figure 12. Typical Base−Emitter Voltage

= 150°C; TC is vari-

J(pk)

MJL21193, MJL21194

10000

1000

C, CAPACITANCE (pF)

TC = 25°C

f

= 1 MHz)

(test)

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. MJL21193 Typical Capacitance

1.2

1.1

1.0

0.9

10000

1000

100

TC = 25°C

f

= 1 MHz)

(test)

C

ib

VR, REVERSE VOLTAGE (VOLTS)

C

ob

100101.00.1

C

ib

C

ob

C, CAPACITANCE (pF)

100101.00.1

Figure 15. MJL21194 Typical Capacitance

, TOTAL HARMONIC

DISTORTION (%)

0.8

HD

T

0.7

0.6

Figure 16. Typical Total Harmonic Distortion

AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC

DISTORTION

ANALYZER

FREQUENCY (Hz)

SOURCE

AMPLIFIER

50 W

10000010000100010010

+50 V

DUT

DUT

0.5 W

0.5 W

8.0 W

−50 V

Figure 17. Total Harmonic Distortion Test Circuit

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MJL21193, MJL21194

PACKAGE DIMENSIONS

TO−3BPL (TO−264)

CASE 340G−02

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS

DIMAMIN MAX MIN MAX

28.0 29.0 1.102 1.142

B 19.3 20.3 0.760 0.800
C 4.7 5.3 0.185 0.209
D 0.93 1.48 0.037 0.058
E 1.9 2.1 0.075 0.083
F 2.2 2.4 0.087 0.102
G 5.45 BSC 0.215 BSC
H 2.6 3.0 0.102 0.118
J 0.43 0.78 0.017 0.031
K 17.6 18.8 0.693 0.740
L 11.2 REF 0.411 REF
N 4.35 REF 0.172 REF
P 2.2 2.6 0.087 0.102
Q 3.1 3.5 0.122 0.137
R 2.25 REF 0.089 REF
U 6.3 REF 0.248 REF
W 2.8 3.2 0.110 0.125

INCHES

−B−

Q

0.25 (0.010) MTB

M

−T−

C

E

U

N

A

L

P

K

J
H

S

2 PL

123

W

R

F

G

3 PL

D

0.25 (0.010) MTB

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJL21193/D

6