Datasheet MJH 6284G Datasheet

MJH6284(NPN),
MJH6287(PNP)

Darlington Complementary
Silicon Power Transistors

These devices are designed for general−purpose amplifier and

low−speed switching motor control applications.

Features

• Similar to the Popular NPN 2N6284 and the PNP 2N6287

• Rugged RBSOA Characteristics

• Monolithic Construction with Built−in Collector−Emitter Diode

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous

− Peak

Base Current I

Total Device Dissipation @ TC = 25_C
Derate above 25_C

Operating and Storage Junction
Temperature Range

CEO

I

P

TJ, T

CB

EB

C

B

D

stg

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

160

140

120

100

80

R

q

JC

100 Vdc

100 Vdc

5.0 Vdc

20
40

0.5 Adc

160

1.28

–65 to +150

0.78

Adc

W

W/_C

_C

_C/W

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DARLINGTON 20 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS
100 VOLTS, 160 WATTS

SOT−93

(TO−218)

CASE 340D

TO−247

CASE 340L

STYLE 3

NOTE: Effective June 2012 this device will

be available only in the TO−247
package. Reference FPCN# 16827.

60

40

, POWER DISSIPATION (WATTS)

D

20

P

0

0

50 75 125 150 200100 17525

, CASE TEMPERATURE (°C)

T

C

Figure 1. Power Derating

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2012

May, 2012 − Rev. 7

1 Publication Order Number:

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

MJH6284/D

MJH6284 (NPN), MJH6287 (PNP)

MARKING DIAGRAMS

TO−247

TO−218

MJH628x

AYWWG

AYWWG

MJH628x

1 BASE

2 COLLECTOR

3 EMITTER

MJH628x = Device Code

x = 4 or 7
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package

1 BASE

ORDERING INFORMATION

Device Order Number Package Type Shipping

MJH6284G TO−218

MJH6287G TO−218

MJH6284G TO−247

MJH6287G TO−247

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

3 EMITTER

2 COLLECTOR

30 Units / Rail

30 Units / Rail

30 Units / Rail

30 Units / Rail

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2

MJH6284 (NPN), MJH6287 (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (I

= 0.1 Adc, IB = 0) V

C

Collector Cutoff Current (VCE = 50 Vdc, IB = 0) I

Collector Cutoff Current

(V

= Rated VCB, V

CE

= Rated VCB, V

(V

CE

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TC = 150_C)

BE(off)

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) I

ON CHARACTERISTICS (Note 1)

DC Current Gain

= 10 Adc, VCE = 3.0 Vdc)

(I

C

(IC = 20 Adc, VCE = 3.0 Vdc)

Collector−Emitter Saturation Voltage

(I

= 10 Adc, IB = 40 mAdc)

C

(IC = 20 Adc, IB = 200 mAdc)

Base−Emitter On Voltage (IC = 10 Adc, VCE = 3.0 Vdc) V

Base−Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) V

DYNAMIC CHARACTERISTICS

Current−Gain Bandwidth Product (I

= 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) f

C

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 0.1 MHz) MJH6284

CB

MJH6287

Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz) h

SWITCHING CHARACTERISTICS

Resistive Load

Delay Time

Rise Time t

Storage Time t

VCC = 30 Vdc, IC = 10 Adc
I

= IB2 = 100 mA

B1

Duty Cycle = 1.0%

Fall Time t

1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Symbol Min Max Unit

CEO(sus)

CEO

I

CEX

EBO

h

FE

V

CE(sat)

BE(on)

BE(sat)

T

C

ob

fe

100 − Vdc

− 1.0 mAdc

mAdc

−

−

0.5

5.0

− 2.0 mAdc

−

750
100

18,000

−

Vdc

−

−

2.0

3.0

− 2.8 Vdc

− 4.0 Vdc

4.0 − MHz

pF

−

−

400
600

300 − −

Typical

Symbol

t

d

r

s

f

NPN PNP

0.1 0.1 ms

0.3 0.3

1.0 1.0

3.5 2.0

Unit

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D

, MUST BE FAST RECOVERY TYPES, e.g.:

1

1N5825 USED ABOVE I
MSD6100 USED BELOW I

V2

APPROX

+12 V

0

V1

APPROX

-8.0 V

t

, tf, ≤ 10 ns

r

DUTY CYCLE = 1.0%

For NPN test circuit reverse diode and voltage polarities.

≈ 100 mA

B

≈ 100 mA

B

25 ms

51 D

R

B

≈ 8.0 k ≈ 50

1

+4.0 V

for td and tr, D1 is disconnected
and V2 = 0

Figure 2. Switching Times Test Circuit Figure 3. Darlington Schematic

V

CC

-30 V

R

C

TUT

SCOPE

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NPN

MJH6284

COLLECTOR COLLECTOR

BASE BASE

EMITTER EMITTER

3

PNP

MJH6287

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.07

0.02

0.05

0.03

RESISTANCE (NORMALIZED)

SINGLE PULSE

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

0.01 0.02 2.0 20 2000.3

0.01

0.03

0.05 1.0 3.0 5.0 10 30 50 100 300 500

0.1 0.50.2

MJH6284 (NPN), MJH6287 (PNP)

R

(t) = r(t) R

q

JC

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

t, TIME (ms)

Figure 4. Thermal Response

FBSOA, FORWARD BIAS SAFE OPERATING AREA

50

20

10

5.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMPS)

0.2

C

I

0.1

0.05

2.0

0.1 ms

0.5 ms

1.0 ms

5.0 ms

TJ = 150°C

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION
@T

= 25°C (SINGLE PULSE)

C

5.0 10

V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

20 100

q

= 0.78°C/W MAX

- TC = P

JC

1

R

q

(pk)

dc

50

(t)

JC

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

1000

50

40

30

20

, COLLECTOR CURRENT (AMPS)

10

C

I

0

0

Figure 5. MJH6284, MJH6287

DUTY CYCLE = 10%

L = 200 mH
I

≥ 100

C/IB

= 25°C

T

C

V

= 0-5.0 V

BE(off)

R

= 47 W

BE

10 20 80

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

30 110100

60

40

Figure 6. Maximum RBSOA, Reverse Bias

Safe Operating Area

FORWARD BIAS

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

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4

= 150_C; TC is

J(pk)

may be calculated from the data in

J(pk)

− V

C

CE

J(pk)

MJH6284 (NPN), MJH6287 (PNP)

NPN PNP

3000

2000

TJ = 150°C

1000

500

, DC CURRENT GAIN

FE

h

300

200

150

0.2 203.01.00.5 5.0 100.3 2.0 7.0

VCE = 3.0 V

25°C

-55°C

I

, COLLECTOR CURRENT (AMPS)

C

Figure 7. DC Current Gain

5000

VCE = 3.0 V

3000

TJ = 150°C

2000

25°C

1000

, DC CURRENT GAIN

FE

h

700

-55°C

500

300

0.2 3.01.00.5 5.0 100.3 2.0 7.0

0.7

, COLLECTOR CURRENT (AMPS)

I

C

20

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

V, VOLTAGE (VOLTS)

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

20

IC = 5.0 A

30

1.0

0.8

1.0

2.0 5.0

3.0 10

IB, BASE CURRENT (mA)

3.0

2.5

TJ = 25°C

2.0

VBE @ VCE = 3.0 V

1.5

V

@ IC/IB = 250

BE(sat)

1.0
V

@ IC/IB = 250

CE(sat)

0.5

0.1

0.2 0.5 5.00.3 1.00.7 3.0 30

I

, COLLECTOR CURRENT (AMPS)

C

50 100

7.02.0 10 20

2.8

2.6

TJ = 25°C

2.4

2.2

2.0

1.8

IC = 15 A

1.6

1.4

IC = 10 A

300 500 1000200

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

1.2

1.0

0.8

1.0

2.0 5.0

3.0 10

Figure 8. Collector Saturation Region

3.0

2.5

2.0

1.5

V, VOLTAGE (VOLTS)

1.0

0.5

TJ = 25°C

V

@ IC/IB = 250

BE(sat)

V

@ VCE = 3.0 V

BE(on)

V

@ IC/IB = 250

CE(sat)

0.1

0.2 0.5 5.00.3 1.00.7 3.0 30

I

C

IC = 10 A

IC = 5.0 A

30

50 100

20

, BASE CURRENT (mA)

I

B

7.02.0 10 20

, COLLECTOR CURRENT (AMPS)

IC = 15 A

300 500200

1000

Figure 9. “On” Voltages

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MJH6284 (NPN), MJH6287 (PNP)

PACKAGE DIMENSIONS

SOT−93 (TO−218)

CASE 340D−02

ISSUE E

C

B

U

L

S

K

4

123

Q

E

A

D

J

H

V

G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A --- 20.35 --- 0.801
B 14.70 15.20 0.579 0.598
C 4.70 4.90 0.185 0.193
D 1.10 1.30 0.043 0.051
E 1.17 1.37 0.046 0.054
G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L --- 16.20 --- 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
U 4.00 REF 0.157 REF
V 1.75 REF 0.069

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHESMILLIMETERS

TO−247

CASE 340L−02

ISSUE F

−T−

−B−

U

N

A

123

C

E

L

4

−Q−

0.63 (0.025)MTB

P

−Y−

K

F

2 PL

G

W

3 PL

D

0.25 (0.010)MYQ

J

H

S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A 20.32 21.08 0.800 8.30
B 15.75 16.26 0.620 0.640
C 4.70 5.30 0.185 0.209
D 1.00 1.40 0.040 0.055

M

E 1.90 2.60 0.075 0.102
F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
J 0.40 0.80 0.016 0.031
K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHESMILLIMETERS

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MJH6284 (NPN), MJH6287 (PNP)

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