Datasheet MJH 11017G Datasheet

MJH11017, MJH11019,
MJH11021(PNP)
MJH11018, MJH11020,
MJH11022(NPN)

Complementary Darlington
Silicon Power Transistors

These devices are designed for use as general purpose amplifiers,

low frequency switching and motor control applications.

Features

• High DC Current Gain @ 10 Adc — h

• Collector−Emitter Sustaining Voltage

V

CEO(sus)

= 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21

• Low Collector−Emitter Saturation Voltage

V

= 1.2 V (Typ) @ IC = 5.0 A

CE(sat)

= 1.8 V (Typ) @ I

• Monolithic Construction

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage V

Collector Current − Continuous

Base Current I

Total Device Dissipation @ TC = 25_C
Derate above 25_C

Operating and Storage Junction Temperature
Range

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021

MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021

− Peak (Note 1)

Characteristic Symbol Max Unit

= 400 Min (All Types)

FE

= 10 A

C

V

CEO

V

CB

EB

I

C

B

P

D

TJ, T

R

–65 to

stg

+150

JC

0.83

q

150
200
250

150
200
250

5.0 Vdc

15
30

0.5 Adc

150

1.2

Vdc

Vdc

Adc

W

W/_C

_C

_C/W

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15 AMPERE DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

150−250 VOLTS, 150 WATTS

NPN PNP

BASE

1

COLLECTOR 2

EMITTER 3

MJH11019
MJH11021

SOT−93

(TO−218)

CASE 340D

STYLE 1

TO−247

CASE 340L

STYLE 3

COLLECTOR 2

BASE

1

EMITTER 3

MJH11018 MJH11017
MJH11020
MJH11022

1

2

3

NOTE: Effective June 2012 this device will

be available only in the TO−247
package. Reference FPCN# 16827.

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2012

May, 2012 − Rev. 8

1 Publication Order Number:

MJH11017/D

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

MARKING DIAGRAMS

TO−247 TO−218

MJH110xx

AYWWG

1 BASE

3 EMITTER

2 COLLECTOR

A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
MJH110xx = Device Code

1 BASE

2 COLLECTOR

xx = 17, 19, 21, 18, 20, 22

ORDERING INFORMATION

Device Order Number Package Type Shipping

MJH11017G TO−218

MJH11018G TO−218

MJH11019G TO−218

MJH11020G TO−218

MJH11021G TO−218

MJH11022G TO−218

MJH11017G TO−247

MJH11018G TO−247

MJH11019G TO−247

MJH11020G TO−247

MJH11021G TO−247

MJH11022G TO−247

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

(Pb−Free)

AYWWG

MJH110xx

3 EMITTER

30 Units / Rail

30 Units / Rail

30 Units / Rail

30 Units / Rail

30 Units / Rail

30 Units / Rail

30 Units / Rail

30 Units / Rail

30 Units / Rail

30 Units / Rail

30 Units / Rail

30 Units / Rail

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2

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

160

140

120

100

80

60

40

, POWER DISSIPATION (WATTS)

D

20

P

0

0

40 60 100 120 16080 14020

, CASE TEMPERATURE (°C)

T

C

Figure 1. Power Derating

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(I

= 0.1 Adc, IB = 0) MJH11017, MJH11018

C

MJH11019, MJH11020
MJH11021, MJH11022

Collector Cutoff Current

(VCE = 75 Vdc, IB = 0) MJH11017, MJH11018
(VCE = 100 Vdc, IB = 0) MJH11019, MJH11020
(VCE = 125 Vdc, IB = 0) MJH11021, MJH11022

Collector Cutoff Current

(V

= Rated VCB, V

CE

= Rated VCB, V

(V

CE

= 1.5 Vdc)

BE(off)

= 1.5 Vdc, TJ = 150_C)

BE(off)

Emitter Cutoff Current (VBE = 5.0 Vdc IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain

(I

= 10 Adc, VCE = 5.0 Vdc)

C

(IC = 15 Adc, VCE = 5.0 Vdc)

Collector−Emitter Saturation Voltage

(I

= 10 Adc, IB = 100 mA)

C

= 15 Adc, IB = 150 mA)

(I

C

Base−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)

Base−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)

DYNAMIC CHARACTERISTICS

Current−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

Output Capacitance MJH11018, MJH11020, MJH11022

(V

= 10 Vdc, IE = 0, f = 0.1 MHz) MJH11017, MJH11019, MJH11021

CB

Small−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Characteristic

Delay Time

Rise Time

Storage Time

(VCC = 100 V, IC = 10 A, IB = 100 mA

V

= 5.0 V) (See Figure 2)

BE(off)

Fall Time

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

Symbol

V

CEO(sus)

I

CEO

I

CEV

I

EBO

h

FE

V

CE(sat)

V

BE(on)

V

BE(sat)

f

T

C

ob

h

fe

Symbol

t

d

t

r

t

s

t

f

Min

150
200
250

−

−

−

−

−

−

400
100

−

−

−

−

3.0

−

−

75

NPN

150

1.2

4.4

2.5

Typical

Max

−

−

−

1.0

1.0

1.0

0.5

5.0

2.0

15,000

−

2.5

4.0

2.8

3.8

−

400
600

−

PNP

75

0.5

2.7

2.5

Unit

Vdc

mAdc

mAdc

mAdc

−

Vdc

Vdc

Vdc

−

pF

−

Unit

ns

ms

ms

ms

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3

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

V

CC

100 V

R

C

TUT

RB & RC varied to obtain desired current levels
D

, must be fast recovery types, e.g.:

1

1N5825 used above I
MSD6100 used below I

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.07

0.02

0.05

0.03

RESISTANCE (NORMALIZED)

SINGLE PULSE

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.01

0.02

0.01 0.03 3.0 30 3000.3

≈ 100 mA

B

≈ 100 mA

B

0.01

0.05 1.0 2.0 5.0 10 20 50 100 200 500

0.1 0.50.2

, tf ≤ 10 ns

t

r

Duty Cycle = 1.0%

Figure 2. Switching Times Test Circuit

V2

APPROX

+12 V

0

V1

APPROX

-8.0 V

For NPN test circuit, reverse diode and voltage polarities.

R

q

JC

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

t, TIME (ms)

25 ms

(t) = r(t) R

q

(pk)

JC

1

R

q

= 0.83°C/W MAX

- TC = P

51

(t)

JC

R

B

D

1

+4.0 V

For t

and tr, D1 is disconnected

d

and V2 = 0

P

(pk)

DUTY CYCLE, D = t1/t

t

1

t

2

SCOPE

2

1000

30
20

10

5.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMPS)

C

I

0.2

0

= 25°C SINGLE PULSE

T

C

0.5 ms

1.0 ms

5.0 ms

WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022

2.0

5.0 50 25015030

3.0 10

V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

dc

20 100

Figure 4. Maximum Rated Forward Bias

Safe Operating Area (FBSOA)

Figure 3. Thermal Response

FORWARD BIAS

0.1 ms

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 4 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

= 150_C; TC is

J(pk)

may be calculated from the data in

J(pk)

C

− V

CE

J(pk)

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4

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

30

L = 200 mH
I

≥ 50

C/IB1

= 100°C

T

C

20

V

= 0-5.0 V

BE(off)

R

= 47 W

BE

DUTY CYCLE = 10%

10

, COLLECTOR CURRENT (AMPS)

C

I

MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022

0

20

0

60 180100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

140

260220

Figure 5. Maximum Rated Reverse Bias

Safe Operating Area (RBSOA)

PNP NPN

PNP NPN

00
00

VCE = 5.0 V

00

00

00

TC = 150°C

10,000

5000

2000

REVERSE BIAS

For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.

VCE = 5.0 V

TC = 150°C

00

00

00

00

0.2 153.01.00.5 5.0 100.3

25°C

-55°C

0.7

I

, COLLECTOR CURRENT (AMPS)

C

1000

500

, DC CURRENT GAIN

FE

h

200

100

0.2 153.01.00.5 5.0 100.3 7.0

Figure 6. DC Current Gain

25°C

-55°C

0.7

IC, COLLECTOR CURRENT (AMPS)

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5

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

PNP NPN

4.5

4.5

TJ = 25°C

4.0

3.5

3.0

2.5

IC = 15 A

IC = 10 A

IC = 5.0 A

300 500 1000200

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

2.0

1.5

1.0

1.0

3.0 10 30

2.0 5.0

IB, BASE CURRENT (mA)

50 100

20

Figure 7. Collector Saturation Region

PNP NPN

4.0

3.5

3.0

2.5

TJ = 25°C

TJ = 25°C

4.0

3.5

3.0

2.5

2.0

1.5

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

1.0

1.0 2.0 5.03.0 10 30 50 100

4.0

3.5

3.0

2.5

TJ = 25°C

20 300 500200

I

, BASE CURRENT (mA)

B

IC = 15 A

IC = 10 A

IC = 5.0 A

1000

V

@ IC/IB = 100

2.0

VOLTAGE (VOLTS)

1.5

1.0

0.5

0.2 0.5 5.00.3 1.00.7 3.0

BE(sat)

VBE @ VCE = 5.0 V

V

@ IC/IB = 100

CE(sat)

, COLLECTOR CURRENT (AMPS)

I

C

7.02.0 10 20

Figure 8. “On” Voltages

PNP NPN

MJH11017
MJH11019
MJH11021

BASE

COLLECTOR

2.0

VOLTAGE (VOLTS) V

1.5

1.0

0.5

0.2 0.5 5.01.00.7

V

BE(sat)

VBE @ VCE = 5.0 V

V

2.0 10 20

I

, COLLECTOR CURRENT (AMPS)

C

MJH11018
MJH11020
MJH11022

BASE

@ IC/IB = 100

@ IC/IB = 100

CE(sat)

COLLECTOR

EMITTER

EMITTER

Figure 9. Darlington Schematic

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6

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

PACKAGE DIMENSIONS

SOT−93 (TO−218)

CASE 340D−02

ISSUE E

C

B

U

L

S

K

4

123

Q

E

A

D

J

H

V

G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A --- 20.35 --- 0.801
B 14.70 15.20 0.579 0.598
C 4.70 4.90 0.185 0.193
D 1.10 1.30 0.043 0.051
E 1.17 1.37 0.046 0.054
G 5.40 5.55 0.213 0.219
H 2.00 3.00 0.079 0.118
J 0.50 0.78 0.020 0.031
K 31.00 REF 1.220 REF
L --- 16.20 --- 0.638
Q 4.00 4.10 0.158 0.161
S 17.80 18.20 0.701 0.717
U 4.00 REF 0.157 REF
V 1.75 REF 0.069

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHESMILLIMETERS

TO−247

CASE 340L−02

ISSUE F

−T−

−B−

U

N

A

123

C

E

L

4

−Q−

0.63 (0.025)MTB

P

−Y−

K

F

2 PL

G

W

3 PL

D

0.25 (0.010)MYQ

J

H

S

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A 20.32 21.08 0.800 8.30
B 15.75 16.26 0.620 0.640
C 4.70 5.30 0.185 0.209
D 1.00 1.40 0.040 0.055

M

E 1.90 2.60 0.075 0.102
F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
J 0.40 0.80 0.016 0.031
K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC

W 2.87 3.12 0.113 0.123

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHESMILLIMETERS

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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)

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