Datasheet MJF47 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

   

Isolated Package Applications

Designed for line operated audio output amplifiers, switching power supply drivers
and other switching applications, where the mounting surface of the device is required
to be electrically isolated from the heatsink or chassis.

• Electrically Similar to the Popular TIP47

• 250 V

CEO(sus)

• 1 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• UL Recognized, File #E69369, to 3500 V

RMS

Isolation

MAXIMUM RATINGS

Rating

Symbol

Value

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

Collector–Emitter Voltage

V

CEO

250

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Base Voltage

V

CB

350

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Emitter–Base Voltage

V

EB

5

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

RMS Isolation Voltage (1) Test No. 1 Per Fig. 10

(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 11
TA = 25_C) Test No. 3 Per Fig. 12

V

ISOL

4500
3500
1500

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

V

RMS

Collector Current — Continuous

Peak

I

C

1
2

ÎÎÎ

ÎÎÎ

ÎÎÎ

Adc

Base Current

I

B

0.6

ÎÎÎ

ÎÎÎ

ÎÎÎ

Adc

Total Power Dissipation* @ TC = 25_C

Derate above 25_C

P

D

28

0.23

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Watts
W/_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

P

D

2

0.016

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Watts
W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +150

ÎÎÎ

ÎÎÎ

ÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

Thermal Resistance, Junction to Ambient

R

θJA

62.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

_

C/W

Thermal Resistance, Junction to Case*

R

θJC

4.4

ÎÎÎ

ÎÎÎ

ÎÎÎ

_

C/W

Lead Temperature for Soldering Purpose

T

L

260

ÎÎÎ

ÎÎÎ

ÎÎÎ

_

C

*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on

a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

(1) Proper strike and creepage distance must be provided.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJF47/D

 Motorola, Inc. 1995



NPN SILICON

POWER TRANSISTOR

1 AMPERE
250 VOLTS

28 WATTS

CASE 221D–02

TO–220 TYPE

MJF47

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

CEO(sus)

250

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

CEO

—

0.2

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

CES

—

0.1

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

EBO

—

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1 Adc, VCE = 10 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

h

FE

30
10

150

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

Collector–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

CE(sat)

—

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter On Voltage

(IC = 1 Adc, VCE = 10 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

BE(on)

—

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(IC = 0.2 Adc, VCE 10 Vdc, f = 2 MHz)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

f

T

10

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

TYPICAL CHARACTERISTICS

0.02

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

2

0.1 2

60

Figure 2. “On” Voltages

200

h

FE

, DC CURRENT GAIN

TJ = 150°C

1

25°C

VCE = 10 V

IC, COLLECTOR CURRENT (AMPS)

0

0.6

1.4

V, VOLTAGE (VOLTS)

100

10

40

20

4

6

0.04 0.06 0.2

0.4 0.6

–55°C

1.2

1

0.8

0.2

0.4

0.02 0.1 210.04 0.06 0.2

0.4 0.6

TJ = 25°C

V

BE(sat)

@ IC/IB = 5

V

BE(on)

@ VCE = 4 V

V

CE(sat)

@ IC/IB = 5 V

MJF47

3

Motorola Bipolar Power Transistor Device Data

0.02

0.05

0.1 2

0.2

5

1

t, TIME ( s)

µ

2

1

0.5

0.1

0.05 0.2 0.50.02

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMPS)

0.01

0.1 2

0.05

Figure 4. Turn–Off Time

1

1

TJ = 25°C
VCC = 200 V
IC/IB = 5

IC, COLLECTOR CURRENT (AMPS)

t

r

t, TIME ( s)

µ

0.5

0.2

0.1

0.02

0.05 0.2 0.5

t

d

TJ = 25°C
VCC = 200 V
IC/IB = 5

t

s

t

f

TURN–ON PULSE

APPROX

+11 V

Vin 0

V

EB(off)

t

1

APPROX

+11 V

V

in

t

2

TURN–OFF PULSE

t

3

t1

≤

7 ns

100 < t2 < 500

µ

s

t3 < 15 ns

DUTY CYCLE

≈

2%

APPROX –9 V

RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.

SCOPE

R

C

R

B

51

V

CC

V

in

Cjd << C

eb

–4 V

Figure 5. Switching Time Equivalent Circuit

t, TIME (msec)

1

0.01

0.2

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.5 10 20 50 100 200 500 1K 2K 5K

SINGLE PULSE
R

θ

JC(t)

= r(t) R

θ

JC

R

θ

JC

= 4.4

°

C/W MAX

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

1 52 10 K

0.5

0.3

0.03

0.1

Figure 6. Thermal Response

0.3 3 30 300 3K

MJF47

4

Motorola Bipolar Power Transistor Device Data

I

C

, COLLECTOR CURRENT (AMPS)

100 µs

1 ms

dc

3

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

300100

Figure 7. Maximum Forward Bias Safe

Operating Area

2

1

0.5

0.3

0.2

0.1

0.05

0.03
20 30 50 200

500 µs

CURRENT LIMIT
THERMAL LIMIT @ TC = 25

°

C

SECONDARY BREAKDOWN LIMIT

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 7 is based on T

J(pk)

= 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 1 0% provided T

J(pk)

v

150°C. T

J(pk)

may be calculated from the data in Fig­ure 6. At high case temperatures, thermal limitations will re­duce the power that can be handled to values less than the
limitations imposed by second breakdown.

0

TC, CASE TEMPERATURE (

°

C)

0

50 200

20

40

30

10

100 150

Figure 8. Power Derating

P

D(AV)

, AVERAGE POWER DISSIPATION (WATTS)

0

TA, AMBIENT TEMPERATURE (

°

C)

0

50 200

1

2

1.5

0.5

100 150

Figure 9. Power Derating

P

D(AV)

, AVERAGE POWER DISSIPATION (WATTS)

MJF47

5

Motorola Bipolar Power Transistor Device Data

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.110” MIN

Figure 10. Clip Mounting Position

for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

CLIP

CLIP

0.107” MIN
LEADS

HEATSINK

0.107” MIN

Figure 11. Clip Mounting Position

for Isolation Test Number 2

Figure 12. Screw Mounting Position

for Isolation Test Number 3

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

TEST CONDITIONS FOR ISOLATION TESTS*

4–40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in.lbs is sufficient to provide maximum power dissipation capability . The compression washer helps to maintain a con­stant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in.lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in.lbs without adversely affecting the pack­age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in.lbs of mounting torque under any mounting conditions.

Figure 13. Typical Mounting Techniques*

MOUNTING INFORMATION

**For more information about mounting power semiconductors see Application Note AN1040.

MJF47

6

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221D–02

TO–220 TYPE

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

DIMAMIN MAX MIN MAX

MILLIMETERS

0.621 0.629 15.78 15.97

INCHES

B 0.394 0.402 10.01 10.21
C 0.181 0.189 4.60 4.80
D 0.026 0.034 0.67 0.86
F 0.121 0.129 3.08 3.27
G 0.100 BSC 2.54 BSC
H 0.123 0.129 3.13 3.27
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
N 0.200 BSC 5.08 BSC
Q 0.126 0.134 3.21 3.40
R 0.107 0.111 2.72 2.81
S 0.096 0.104 2.44 2.64
U 0.259 0.267 6.58 6.78

–B–

–Y–

G

N

D

L

K

H

A

F

Q

3 PL

1 2 3

M

B

M

0.25 (0.010) Y

SEATING
PLANE

–T–

U

C

S

J

R

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MJF47/D

*MJF47/D*

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