MJF44H11 (NPN),
ÎÎ
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MJF45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
For Isolated Package Applications
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
• Low Collector−Emitter Saturation Voltage −
V
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Power Dissipation
@ T
= 25°C
ОООООООООО
ОООООООООО
ОООООООООО
C
Derate above 25°C
Total Power Dissipation
@ T
= 25°C
A
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
− Peak
Characteristic
= 1.0 V (Max) @ 8.0 A
CE(sat)
V
CEO
V
EB
I
C
P
D
Î
P
D
Î
Î
TJ, T
stg
Symbol
R
q
JC
R
q
JA
80
5
10
20
36
ÎÎÎ
1.67
ÎÎÎ
2.0
0.016
ÎÎÎ
−55 to 150
Max
3.5
62.5
Vdc
Vdc
Adc
W
W/°C
W
W/°C
°C
Unit
°C/W
°C/W
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SILICON POWER TRANSISTORS
10 AMPERES
80 VOLTS, 36 WATTS
ISOLATED TO−220
CASE 221D
1
2
3
MARKING DIAGRAM
F4xH11 = Specific Device Code
G=Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device Package Shipping
MJF44H11 TO−220 FULLPACK
MJF44H11G TO−220 FULLPACK
MJF45H11 50 Units/Rail
MJF45H11G 50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
TO−220 FULLPACK
TO−220 FULLPACK
STYLE 2
F4xH11G
AYWW
x = 4 or 5
50 Units/Rail
50 Units/Rail
(Pb−Free)
(Pb−Free)
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 4
1 Publication Order Number:
MJF44H11/D
MJF44H11 (NPN), MJF45H11 (PNP)
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ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
ОООООООООООООООООО
(I
= 30 mA, IB = 0)
C
Collector Cutoff Current
(V
= Rated V
ОООООООООООООООООО
CE
CEO
, VBE = 0)
Emitter Cutoff Current
(V
= 5 Vdc)
EB
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
ОООООООООООООООООО
(I
= 8 Adc, IB = 0.4 Adc)
C
Base−Emitter Saturation Voltage
(I
= 8 Adc, IB = 0.8 Adc)
ОООООООООООООООООО
C
DC Current Gain
(V
= 1 Vdc, IC = 2 Adc)
CE
DC Current Gain
ОООООООООООООООООО
(V
= 1 Vdc, IC = 4 Adc)
CE
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, f
ОООООООООООООООООО
ОООООООООООООООООО
= 1 MHz) MJF44H11
test
MJF45H11
Gain Bandwidth Product
(I
= 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJF44H11
C
ОООООООООООООООООО
MJF45H11
SWITCHING TIMES
Symbol
V
CEO(sus)
ÎÎÎ
I
CES
ÎÎÎ
I
EBO
V
CE(sat)
ÎÎÎ
V
BE(sat)
ÎÎÎ
h
FE
ÎÎÎÎÎ
C
cb
ÎÎÎ
ÎÎÎ
f
T
Min
80
Î
−
Î
−
−
Î
−
Î
60
40
Î
−
−
Î
−
ÎÎÎ
Î
−
Typ
Î
Î
Î
Î
Î
Î
130
230
Î
50
Î
40
−
−
−
−
−
−
−
Max
−
ÎÎ
1.0
ÎÎ
10
1.0
ÎÎ
1.5
ÎÎ
−
−
ÎÎ
ÎÎ
−
−
ÎÎ
−
ÎÎ
−
Unit
Vdc
Î
mA
Î
mA
Vdc
Î
Vdc
Î
−
Î
pF
Î
Î
MHz
Î
Delay and Rise Times
(I
= 5 Adc, IB1 = 0.5 Adc) MJF44H11
C
ОООООООООООООООООО
Storage Time
ОООООООООООООООООО
(I
= 5 Adc, IB1 = IB2 = 0.5 Adc) MJF44H11
C
ОООООООООООООООООО
MJF45H11
MJF45H11
Fall Time
(I
= 5 Adc, IB1 = IB2 = 0.5 Adc) MJF44H11
C
ОООООООООООООООООО
MJF45H11
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.1
0.07
0.05
r(t), TRANSIENT THERMAL
0.03
RESISTANCE (NORMALIZED)
0.02
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
0.02
Z
q
JC(t)
R
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
t, TIME (ms)
Figure 1. Thermal Response
td + t
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
= r(t) R
q
JC
= 1.56°C/W MAX
JC
− TC = P
(pk)
r
−
Î
−
t
s
t
f
Î
−
−
Î
−
Î
−
1
Z
q
JC(t)
300
Î
Î
Î
Î
P
(pk)
135
500
500
140
100
t
1
ÎÎ
ÎÎ
ÎÎ
ÎÎ
t
2
DUTY CYCLE, D = t1/t
−
−
−
−
−
−
ns
Î
ns
Î
Î
ns
Î
2
100 200
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2
MJF44H11 (NPN), MJF45H11 (PNP)
100
50
30
20
10
5.0
3.0
2.0
1.0
0.5
, COLLECTOR CURRENT (AMPS)
C
I
0.3
0.2
0.1
1.0
1.0 ms
100 ms
TC ≤ 70° C
DUTY CYCLE ≤ 50%
2.0 3.0 20 30 50 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5.0 10
dc
MJF44H11/MJF45H11
7.0
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
T
T
C
A
60
3.0
10 ms
1.0 ms
70
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
= 150°C; TC is
J(pk)
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
v 150°C. T
J(pk)
may be calculated from the data in
J(pk)
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
, POWER DISSIPATION (WATTS)
D
P
2.0
1.0
40
T
A
20
0
0
0
20
T
C
40 60 100 120 160
T, TEMPERATURE (°C)
80 140
Figure 3. Power Derating
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3
MJF44H11 (NPN), MJF45H11 (PNP)
1000
100
, DC CURRENT GAIN
FE
h
1000
100
, DC CURRENT GAIN
FE
h
10
TJ = 25°C
0.1
I
, COLLECTOR CURRENT (AMPS)
C
110
Figure 4. MJF44H11 DC Current Gain
TJ = 125°C
25°C
−40 °C
VCE = 1 V
VCE = 4 V
VCE = 1 V
1000
, DC CURRENT GAIN
FE
h
1000
, DC CURRENT GAIN
FE
h
100
100
VCE = 4 V
1 V
TJ = 25°C
10
0.1
, COLLECTOR CURRENT (AMPS)
I
C
110
Figure 5. MJF45H11 DC Current Gain
TJ = 125°C
25°C
−40 °C
VCE = 1 V
SATURATION VOLTAGE (VOLTS)
1.2
0.8
0.6
0.4
0.2
10
0.1
, COLLECTOR CURRENT (AMPS)
I
C
110
Figure 6. MJF44H11 Current Gain
versus Temperature
10
0.1
110
IC, COLLECTOR CURRENT (AMPS)
Figure 7. MJF45H11 Current Gain
versus Temperature
1.2
1
V
BE(sat)
1
V
BE(sat)
0.8
0.6
IC/IB = 10
T
= 25°C
J
V
CE(sat)
0
0.1
110
SATURATION VOLTAGE (VOLTS)
0.4
0.2
0
0.1
IC, COLLECTOR CURRENT (AMPS)
Figure 8. MJF44H11 On−Voltages
IC/IB = 10
T
= 25°C
J
V
CE(sat)
110
, COLLECTOR CURRENT (AMPS)
I
C
Figure 9. MJF45H11 On−Voltages
http://onsemi.com
4
MJF44H11 (NPN), MJF45H11 (PNP)
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE G
SEATING
−T−
PLANE
F
−B−
Q
C
S
U
A
123
H
G
N
−Y−
J
R
K
L
D
3 PL
M
M
0.25 (0.010) Y
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D−01 THRU 221D−02 OBSOLETE, NEW
STANDARD 221D−03.
INCHES
DIMAMIN MAX MIN MAX
0.625 0.635 15.88 16.12
B 0.408 0.418 10.37 10.63
C 0.180 0.190 4.57 4.83
D 0.026 0.031 0.65 0.78
F 0.116 0.119 2.95 3.02
G 0.100 BSC 2.54 BSC
H 0.125 0.135 3.18 3.43
J 0.018 0.025 0.45 0.63
K 0.530 0.540 13.47 13.73
L 0.048 0.053 1.23 1.36
N 0.200 BSC 5.08 BSC
Q 0.124 0.128 3.15 3.25
R 0.099 0.103 2.51 2.62
S 0.101 0.113 2.57 2.87
U 0.238 0.258 6.06 6.56
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
MILLIMETERS
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MJF44H11/D
5
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