Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors MJF44H11
DESCRIPTION
·Low Collector Saturation Voltage : V
CE(sat)
·Fast Switching Speeds
·Complement to Type MJF45H11
APPLICATIONS
·Designed for general purpose power amplification and
switching such as output or driver stages in applications
such as switching regulators,converters and power amplifier.
ABSOLUTE MAXIMUM RATINGS(T
= 1.0V(Max.)@ IC= 8A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
Collector-Emitter Voltage 80 V
CEO
V
Emitter-Base Voltage 5 V
EBO
IC Collector Current-Continuous 10 A
ICM Collector Current-Peak 20 A
Collector Power Dissipation
@T
=25℃
PC
Tj Junction Temperature 150
T
stg
C
Collector Power Dissipation
=25℃
@T
a
Storage Temperature Range -55~150
36
2
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
W
℃
℃
R
R
th j-c
th j-a
Thermal Resistance, Junction to Case 3.5
Thermal Resistance,Junction to Ambient 62.5
isc Website：www.iscsemi.cn
℃/W
℃/W
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors MJF44H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
V
V
V
Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 80 V
CEO(SUS)
Collector-Emitter Saturation Voltage I
CE
(sat)
Base-Emitter Saturation Voltage I
BE
(sat)
I
Collector Cutoff Current VCE=Rated V
CES
I
Emitter Cutoff Current VEB= 5V; IC= 0 10
EBO
h
DC Current Gain IC= 2A ; VCE= 1V 60
FE-1
h
DC Current Gain IC= 4A ; VCE= 1V 40
FE-2
= 8A ;IB= 0.4 A 1.0 V
C
= 8A ;IB= 0.8 A 1.5 V
C
; 1.0
CEO
COB Output Capacitance VCB= 10V, f= 0.1MHz 130 pF
fT Current-Gain—Bandwidth Product
= 0.5A; VCE= 10V; f
I
C
=20MHz
test
50 MHz
Switching Times
ton
Turn-On Time I
= 5A; IB1= 0.5A 0.3
C
μA
μA
μs
ts
tf
Storage Time 0.5
I
= 5A; IB1= -IB2= 0.5A
C
Fall Time
0.14
μs
μs
isc Website：www.iscsemi.cn
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