Datasheet mjf31c_mjf32c Datasheet

MJF31C (NPN),
MJF32C (PNP)

Preferred Device

Complementary Silicon
Plastic Power Transistors
for Isolated Package
Applications

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Designed for use in general purpose amplifier and switching

applications.

Features

• Collector−Emitter Saturation Voltage −

V

= 1.2 Vdc (Max) @ IC = 3.0 Adc

CE(sat)

• Collector−Emitter Sustaining Voltage −

V

CEO(sus)

= 100 Vdc (Min)

• High Current Gain − Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

• UL Recognized, File #E69369, to 3500 V

RMS

Isolation

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector CurrentUnclamped Inductive
Load Energy (Note 1)

− Continuous

− Peak

Base Current

Total Power Dissipation @ TC = 25_C

Derate above 25_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

Unclamped Inductive Load Energy (Note 1)

Operating and Storage Junction

Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

Symbol

V

CEO

V

CB

V

EB

I

C

I

B

P

D

P

D

E

TJ, T

stg

R

q

JC

R

q

JC

Value

100

100

5.0

3.0

5.0

1.0

28

0.22

2.0

0.016

32

–65 to + 150

62.5 °C/W

4.46 °C/W

Unit

Vdc

Vdc

Vdc

Adc

Adc

W

W/_C

W

W/_C

mJ

_C

3.0 AMPERE

POWER TRANSISTORS

COMPLEMENTARY SILICON

100 VOLTS, 28 WATTS

4

TO−220 FULLPAK

CASE 221D

STYLE 2

1

2

3

MARKING DIAGRAM

MJF3xCG

AYWW

x = 1 or 2
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week

ORDERING INFORMATION

Device Package Shipping

MJF31C TO−220 FULLPAK 50 Units/Rail

MJF31CG TO−220 FULLPAK

(Pb−Free)

MJF32C TO−220 FULLPAK 50 Units/Rail

MJF32CG TO−220 FULLPAK

(Pb−Free)

Preferred devices are recommended choices for future use
and best overall value.

50 Units/Rail

50 Units/Rail

© Semiconductor Components Industries, LLC, 2008

July, 2008 − Rev. 5

1 Publication Order Number:

MJF31C/D

MJF31C (NPN), MJF32C (PNP)

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 30 mAdc, IB = 0)

Collector Cutoff Current

(IC = 3.0 Adc, VCE = 4.0 Vdc)

Collector Cutoff Current

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS (Note 2)

DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

Collector−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

Base−Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f

Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

T

T

A

C

4.0

40

= 1.0 MHz)

test

Symbol

V

CEO(sus)

I

CEO

I

CES

I

EBO

h

FE

V

CE(sat)

V

BE(on)

f

T

h

fe

Min

100

−

−

−

25
10

−

−

3.0

20

Max

−

0.3

200

1.0

−

50

1.2

1.8

−

−

Unit

Vdc

mAdc

mAdc

mAdc

−

Vdc

Vdc

MHz

−

3.0

30

2.0

20

1.0

10

, POWER DISSIPATION (WATTS)

D

P

0

0

TURN-ON PULSE

APPROX

V

CC

+11 V

V

Vin 0

V

EB(off)

APPROX

+11 V

t

1

t

3

in

t1 ≤ 7.0 ns

R

B

Cjd << C

100 < t2 < 500 ms

V

in

TURN-OFF PULSE

t

2

t3 < 15 ns

DUTY CYCLE ≈ 2.0%
APPROX -9.0 V

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

Figure 2. Switching Time Equivalent Circuit

T

C

T

A

0 100

20 120

60

40 140

80

T, TEMPERATURE (°C)

Figure 1. Power Derating

t, TIME (s)μ

2.0

1.0

0.7

0.5

0.3

0.1

0.07

0.05

0.03

0.02

0.03

R

C

eb

-4.0 V

SCOPE

160

tr @ VCC = 30 V

tr @ VCC = 10 V

0.05 0.3 0.5

0.1 3.0

0.07 0.7

IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn−On Time

td @ V

EB(off)

1.0

IC/IB = 10
TJ = 25°C

= 2.0 V

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2

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

D = 0.5

0.2

0.1

0.05

0.02

0.01

0.01

0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50

SINGLE PULSE

MJF31C (NPN), MJF32C (PNP)

Z

= r(t) R

q

JC(t)

R

q

JC

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

1.0 1.0 100
t, TIME (ms)

q

JC

(t) = 3.125°C/W MAX

(pk)

1

Z

q

JC(t)

- TC = P

Figure 4. Thermal Response

P

DUTY CYCLE, D = t1/t

(pk)

t

1

t

2

2

1.0 k

10

5.0

2.0

1.0

0.5

, COLLECTOR CURRENT (AMP)

C

0.2

I

0.1

SECONDARY BREAKDOWN
LIMITED @ TJ ≤ 150°C
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT

CURVES APPLY
BELOW RATED V

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CEO

10 205.0 50 100

5.0ms

MJF31C,
MJF32C

Figure 5. Active Region Safe Operating Area

3.0

2.0
ts′

1.0

0.7

0.5

0.3

0.2

t, TIME (s)μ

0.1

0.07

0.05

0.03

tf @ VCC = 30 V

tf @ VCC = 10 V

0.05 0.1 0.2 0.70.03 0.3 0.50.07
IC, COLLECTOR CURRENT (AMP)

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

100ms

breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater

1.0ms

dissipation than the curves indicate.

The data of Figure 5 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

IB1 = I

B2

IC/IB = 10
ts′ = ts - 1/8 t
TJ = 25°C

1.0 2.0 3.0 0.2 0.5 1.0 5.00.1 2.0 3.00.3

f

300

200

100

70

CAPACITANCE (pF)

50

30

= 150_C; TC is

J(pk)

may be calculated from the data in

J(pk)

TJ = +25°C

C

eb

10 20 4030

VR, REVERSE VOLTAGE (VOLTS)

− V

C

C

CE

J(pk)

cb

Figure 6. Turn−Off Time

Figure 7. Capacitance

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3

MJF31C (NPN), MJF32C (PNP)

500

300

100

, DC CURRENT GAIN

FE

h

V, VOLTAGE (VOLTS)

TJ = 150°C

25°C

70
50

-55°C

30

10

7.0

5.0

0.05 0.07 0.3 3.00.03

0.1

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.4
TJ = 25°C

1.2

1.0

0.8

0.6

0.4

0.2

0

0.003

V

@ IC/IB = 10

BE(sat)

V

@ IC/IB = 10

CE(sat)

0.005 0.01 0.02 0.03 0.05 0.1

IC, COLLECTOR CURRENT (AMPS)

0.7 1.00.5

VBE @ VCE = 2.0 V

0.2 0.3 0.5 1.0 2.0 3.0

VCE = 2.0 V

2.0

TJ = 25°C

1.6

1.2

IC = 0.3 A

1.0 A 3.0 A

0.8

0.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0

2.0 5.0 20 10001.0

10

100 200 50050

IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)

+2.5

+2.0

+1.5

*APPLIES FOR IC/IB ≤ hFE/2

TJ = -65°C TO +150°C

+1.0

+0.5

*qVC FOR V

CE(sat)

0

-0.5

-1.0

-1.5

-2.0

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

V

qVB FOR V

BE

-2.5

0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0

IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

3

10

VCE = 30 V

2

10

TJ = 150°C

1

10

0

10

-1

10

, COLLECTOR CURRENT (A)μI

-2

C

10

-3

10

-0.4

100°C

REVERSE FORWARD

25°C

I

CES

-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

VBE, BASE-EMITTER VOLTAGE (VOLTS)

7

10

6

10

5

10

4

10

3

10

, EXTERNAL BASE-EMITTER RESISTANCE (OHM

2

10

BE

20 60 80 100 120 16014040

R

Figure 11. Temperature Coefficients

IC = 10 x I

CES

IC ≈ I

CES

IC = 2 x I

CES

(TYPICAL I

OBTAINED FROM FIGURE 12)

TJ, JUNCTION TEMPERATURE (°C)

CES

VALUES

VCE = 30 V

Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance

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4

MJF31C (NPN), MJF32C (PNP)

l

PACKAGE DIMENSIONS

TO−220 FULLPAK

CASE 221D−03

ISSUE J

SEATING

−T−

PLANE

F

−B−

Q

C

S

U

A

123

H

G
N

−Y−

J

R

K

L

D

3 PL

M

M

0.25 (0.010) Y

B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH

3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.

INCHES

DIMAMIN MAX MIN MAX

0.617 0.635 15.67 16.12

B 0.392 0.419 9.96 10.63
C 0.177 0.193 4.50 4.90
D 0.024 0.039 0.60 1.00
F 0.116 0.129 2.95 3.28
G 0.100 BSC 2.54 BSC
H 0.118 0.135 3.00 3.43
J 0.018 0.025 0.45 0.63
K 0.503 0.541 12.78 13.73
L 0.048 0.058 1.23 1.47
N 0.200 BSC 5.08 BSC
Q 0.122 0.138 3.10 3.50
R 0.099 0.117 2.51 2.96
S 0.092 0.113 2.34 2.87
U 0.239 0.271 6.06 6.88

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

MILLIMETERS

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MJF31C/D

5