Datasheet MJF2955, MJF3055 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

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  

. . . specifically designed for general purpose amplifier and switching applications.

• Isolated Overmold Package (1500 Volts RMS Min)

• Electrically Similar to the Popular MJE3055T and MJE2955T

• Collector–Emitter Sustaining Voltage — V

CEO(sus)

90 Volts

• 10 Amperes Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• UL Recognized, File #E69369, to 3500 V

RMS

Isolation

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Sustaining Voltage

V

CEO(sus)

90

Vdc

Collector–Emitter Breakdown Voltage

V

CES

90

Vdc

Base–Emitter Voltage

V

EBO

5

Vdc

Collector Current — Continuous

I

C

10

Adc

Base Current — Continuous

I

B

6

Adc

RMS Isolation Voltage (3) Test No. 1 Per Fig. 4

(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 5
TA = 25_C) Test No. 3 Per Fig. 6

V

ISOL

4500
3500
1500

V

RMS

Total Power Dissipation @ TC = 25_C (2)

Derate above 25_C

P

D

30

0.25

Watts
W/_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

P

D

2

0.016

Watts
W/_C

Operating and Storage Temperature Range

TJ, T

stg

–55 to +150

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance — Junction to Case (2)

R

θJC

4

_

C/W

Thermal Resistance — Junction to Ambient

R

θJA

62.5

_

C/W

Lead Temperature for Soldering Purposes

T

L

260

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
(2) Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a

(2) heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

(3) Proper strike and creepage distance must be provided.

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJF3055/D

 Motorola, Inc. 1995

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COMPLEMENTARY

SILICON

POWER TRANSISTORS

10 AMPERES

90 VOLTS

30 WATTS





CASE 221D–02

TO–220 TYPE

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2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Sustaining Voltage (IC = 200 mAdc, IB = 0)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

CEO(sus)

90

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector Cutoff Current (VCE = 90 Vdc, VBE = 0)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

CES

—

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

µAdc

Collector Cutoff Current (VCE = 90 Vdc, IE = 0)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

CBO

—

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

µAdc

Emitter–Base Leakage (VEB = 5 Vdc, IC = 0)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

I

EBO

—

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

µAdc

ON CHARACTERISTICS (1)

DC Current Gain (ICE = 4 Adc, VCE = 4 Vdc)

DC Current Gain (ICE = 10 Adc, VCE = 4 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

h

FE

20

5

100

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

Collector–Emitter Saturation Voltage

(IC = 4 Adc, IB = 0.4 Adc)
(IC = 10 Adc, IB = 3.3 Adc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

CE(sat)

—
—

1

2.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter On Voltage (IC = 4 Adc, VBE = 4 Vdc)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

V

BE(on)

—

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain–Bandwidth Product

(VCE = 10 Vdc, IC = 0.5 Adc, f

test

= 500 kHz)

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

f

T

2

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

MHz

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

I

C

, COLLECTOR CURRENT (AMPS)

0.01
IC, COLLECTOR CURRENT (AMP)

5

0.05 0.1 2

30

500

h

FE

, DC CURRENT GAIN

VCE = 2 V

TJ = 150°C

50

25°C

–55°C

10

0.02

0.2 0.5 1

300
200

100

20

IC, COLLECTOR CURRENT (AMP)

1.4

1.2

0.8

2

IC, COLLECTOR CURRENT (AMP)

1.6

1.2

0.8

0.4

Figure 1. Maximum Forward Bias Safe

Operating Area

Figure 2. DC Current Gain

Figure 3. “On” Voltages

0.2

0

0

0.4

0.2 10.5 100.1 0.3 32 5

0.6

1

V, VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

100 µs

dc

20

1

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.3
2 100

5
3

10

2

0.5

CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)

3 5 10 20

1

0.2

30

5 ms

50

5 10

V

BE(sat)

@ IC/IB = 10

VBE @ VCE = 3 V

PNP

MJF3055

PNP

MJF2955

TJ = 25°C

0.2 10.5 100.1 0.3 32 5

TJ = 150°C

1 ms

V

CE(sat)

@ IC/IB = 10

TJ = 25°C

V

BE(sat)

@ IC/IB = 10

VBE @ VCE = 2 V

V

CE(sat)

@ IC/IB = 10

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3

Motorola Bipolar Power Transistor Device Data

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.110” MIN

Figure 4. Clip Mounting Position

for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

CLIP

CLIP

0.107” MIN
LEADS

HEATSINK

0.107” MIN

Figure 5. Clip Mounting Position

for Isolation Test Number 2

Figure 6. Screw Mounting Position

for Isolation Test Number 3

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

TEST CONDITIONS FOR ISOLATION TESTS*

4–40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in.lbs is sufficient to provide maximum power dissipation capability . The compression washer helps to maintain a con­stant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in.lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in.lbs without adversely affecting the pack­age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in.lbs of mounting torque under any mounting conditions.

Figure 7. Typical Mounting Techniques*

MOUNTING INFORMATION

**For more information about mounting power semiconductors see Application Note AN1040.

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4

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221D–02

TO–220 TYPE

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

DIMAMIN MAX MIN MAX

MILLIMETERS

0.621 0.629 15.78 15.97

INCHES

B 0.394 0.402 10.01 10.21
C 0.181 0.189 4.60 4.80
D 0.026 0.034 0.67 0.86
F 0.121 0.129 3.08 3.27
G 0.100 BSC 2.54 BSC
H 0.123 0.129 3.13 3.27
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
N 0.200 BSC 5.08 BSC
Q 0.126 0.134 3.21 3.40
R 0.107 0.111 2.72 2.81
S 0.096 0.104 2.44 2.64
U 0.259 0.267 6.58 6.78

–B–

–Y–

G
N

D

L

K

H

A

F

Q

3 PL

1 2 3

M

B

M

0.25 (0.010) Y

SEATING
PLANE

–T–

U

C

S

J

R

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MJF3055/D

*MJF3055/D*

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