Datasheet MJE18008G, MJF18008G Specification

MJE18008G, MJF18008G

SWITCHMODE

NPN Bipolar Power Transistor
For Switching Power Supply Applications

The MJE/MJF18008G have an applications specific state−of−the−art
die designed for use in 220 V line−operated SWITCHMODE Power
supplies and electronic light ballasts.

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Features

• Improved Efficiency Due to Low Base Drive Requirements:

♦ High and Flat DC Current Gain h

Fast Switching

♦
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)

FE

• Tight Parametric Distributions are Consistent Lot−to−Lot

• Two Package Choices: Standard TO−220 or Isolated TO−220

• MJF18008, Case 221D, is UL Recognized at 3500 V

#E69369

RMS

: File

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage V

Collector−Base Breakdown Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

Collector Current − Peak (Note 1) I

Base Current − Continuous I

Base Current − Peak (Note 1) I

RMS Isolation Voltage (Note 2)

(for 1 sec, R.H. < 30%, T

Total Device Dissipation @ TC = 25_C

Derate above 25°C MJE18008

Operating and Storage Temperature TJ, T

Test No. 1 Per Figure 22a
Test No. 1 Per Figure 22b
Test No. 1 Per Figure 22c

= 25_C)

A

MJE18008
MJF18008

MJF18008

V

CEO

CES

EBO

C

CM

B

BM

ISOL

P

D

stg

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

MJE18008
MJF18008

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

2. Proper strike and creepage distance must be provided.

R

q

JC

R

q

JA

T

L

450 Vdc

1000 Vdc

9.0 Vdc

8.0 Adc

16 Adc

4.0 Adc

8.0 Adc

MJF18008

4500
3500
1500

125

45

1.0

0.36

−65 to 150

1.0

2.78

62.5

260

V

W

W/_C

_C

_C/W

_C/W

_C

POWER TRANSISTOR

8.0 AMPERES
1000 VOLTS

45 and 125 WATTS

COLLECTOR

2,4

1

BASE

3

EMITTER

MARKING

DIAGRAMS

4

MJE18008G

AYW W

TO−220AB

1

2

3

1

2

3

G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week

See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.

*For additional information on our Pb−Free strategy

and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.

CASE 221A−09

STYLE 1

TO−220 FULLPACK

CASE 221D

STYLE 2

UL RECOGNIZED

MJF18008G

ORDERING INFORMATION

AYW W

© Semiconductor Components Industries, LLC, 2013

August, 2013 − Rev. 9

1 Publication Order Number:

MJE18008/D

MJE18008G, MJF18008G

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25_C unless otherwise specified)

C

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (I

Collector Cutoff Current (VCE = Rated V

Collector Cutoff Current (VCE = Rated V

Collector Cutoff Current (V

= 800 V, VEB = 0) (TC = 125_C)

CE

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) I

= 100 mA, L = 25 mH) V

C

, IB = 0) I

CEO

, VEB = 0)

CES

(T

= 125_C)

C

CEO(sus)

CEO

I

CES

EBO

ON CHARACTERISTICS

Base−Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)

Base−Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)

Collector−Emitter Saturation Voltage

(I

= 2.0 Adc, IB = 0.2 Adc)

C

(I

= 4.5 Adc, IB = 0.9 Adc)

C

DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)

DC Current Gain (I

DC Current Gain (I

= 4.5 Adc, VCE = 1.0 Vdc)

C

= 2.0 Adc, VCE = 1.0 Vdc)

C

DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

(T

= 125_C)

C

(T

= 125_C)

C

= 125_C)

(T

C

= 125_C)

(T

C

= 125_C)

(T

C

V

BE(sat)

V

CE(sat)

h

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance (VEB = 8.0 V)

Dynamic Saturation Voltage:

Determined 1.0 ms and

3.0 ms respectively after
rising I
final I
(see Figure 18)

reaches 90% of

B1

B1

(IC = 2.0 Adc

I

= 200 mAdc

B1

= 300 V)

V

CC

(IC = 5.0 Adc

1.0 ms

3.0 ms

1.0 ms

IB1 = 1.0 Adc

= 300 V)

V

CC

3.0 ms

(TC = 125°C)

(TC = 125°C)

(TC = 125°C)

(TC = 125°C)

C

C

V

CE(dsat)

SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)

Turn−On Time

Turn−Off Time

(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc, VCC = 300 V)

(TC = 125°C)

t

t

(TC = 125°C)

Turn−On Time

Turn−Off Time

(IC = 4.5 Adc, IB1 = 0.9 Adc,

IB2 = 2.25 Adc, VCC = 300 V)

(TC = 125°C)

t

t

(TC = 125°C)

SWITCHING CHARACTERISTICS: Inductive Load (V

Fall Time

(IC = 2.0 Adc, IB1 = 0.2 Adc,

IB2 = 1.0 Adc)

= 300 V, VCC = 15 V, L = 200 mH)

clamp

(TC = 125°C)

Storage Time

(TC = 125°C)

Crossover Time

(TC = 125°C)

Fall Time

(IC = 4.5 Adc, IB1 = 0.9 Adc,

I

= 2.25 Adc)

B2

(TC = 125°C)

Storage Time

(TC = 125°C)

Crossover Time

(TC = 125°C)

3. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

4. Proper strike and creepage distance must be provided.

450 − − Vdc

− − 100

−

−

−

−

−

−

100
500
100

− − 100

−

−

0.82

0.92

1.1

1.25

mAdc

mAdc

mAdc

Vdc

Vdc

−

−

−

−

FE

14

−

6.0

5.0
11
11
10

f

T

ob

ib

−

−

−

−

−

−

−

−

−

−

−

on

off

on

off

t

fi

t

si

t

c

t

fi

t

si

t

c

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

0.3

0.3

0.35

0.4

−

28

9.0

8.0
15
16
20

13

100

1750

5.5

11.5

3.5

6.5

11.5

14.5

2.4

9.0

200
190

1.2

1.5

100
250

1.6

2.0

100
120

1.5

1.9

250
230

85

135

2.0

2.6

210
250

0.6

0.65

0.7

0.8

34

−

−

−

−

−

−

−

150

2500

−

−

−

−

−

−

−

−

300

−

2.5

−

180

−

2.5

−

180

−

2.75

−

350

−

150

−

3.2

−

300

−

−

MHz

pF

pF

Vdc

ns

ms

ns

ms

ns

ms

ns

ns

ms

ns

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2

MJE18008G, MJF18008G

TYPICAL STATIC CHARACTERISTICS

100

, DC CURRENT GAIN

FE

h

10

1

0.01

2

1.5

1

TJ = 125°C

TJ = 25°C

TJ = -20°C

0.1

I

, COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain @ 1 Volt

TJ = 25°C

IC = 1 A

3 A 5 A 8 A 10 A

100

VCE = 1 V

, DC CURRENT GAIN

h

110

TJ = 125°C

TJ = 25°C

10

TJ = -20°C

FE

1

0.01 0.1 1 10

10

1

VCE = 5 V

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volts

, VOLTAGE (VOLTS)

V

, VOLTAGE (VOLTS)

V

CE

BE

0.5

1.3

1.2

1.1

0.9

0.8

0.7

0.6

0.5

0.4

0

0.01

1

0.01

IC/IB = 10

, VOLTAGE (VOLTS)

0.1

CE

0.1 1 10

, BASE CURRENT (AMPS)

I

B

V

0.01

0.01

IC/IB = 5

0.1

IC COLLECTOR CURRENT (AMPS)

110

Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage

10000

C

ib

1000

100

C

ob

TJ = 25°C

10

C, CAPACITANCE (pF)

1

1 1000

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

10

100

TJ = 125°C

IC/IB = 5
I

C/IB

0.1 1 10

, COLLECTOR CURRENT (AMPS)

I

C

= 10

TJ = 25°C
T

= 125°C

J

TJ = 25°C
f = 1 MHz

Figure 5. Base−Emitter Saturation Region Figure 6. Capacitance

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3

MJE18008G, MJF18008G

TYPICAL SWITCHING CHARACTERISTICS

(I

= IC/2 for all switching)

B2

1500

I

= IC/2

B(off)

V

= 300 V

CC

PW = 20 ms

1000

TJ = 125°C
IC/IB = 5
I

C/IB

= 10

TJ = 25°C

t, TIME (ns)

500

0

0

1 357 1 3 5 7

2

48

6

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Resistive Switching, t

on

3500

I

= IC/2

3000

2500

IC/IB = 5

B(off)

V

= 15 V

CC

= 300 V

V

Z

L

= 200 mH

C

2000

1500

t, TIME (ns)

1000

500

0

13467

TJ = 25°C
T

= 125°C

J

IC/IB = 10

25 8

IC COLLECTOR CURRENT (AMPS)

Figure 9. Inductive Storage Time, t

si

4500

4000

3500

3000

2500

2000

t, TIME (ns)

1500

1000

500

0

5000

4500

4000

3500

3000

2500

2000

, STORAGE TIME (ns)

1500

si

t

1000

500

0

IC/IB = 5

TJ = 25°C

= 125°C

T

J

IC/IB = 10

4826

I

, COLLECTOR CURRENT (AMPS)

C

Figure 8. Resistive Switching, t

TJ = 25°C
T

= 125°C

J

IC = 2 A

IC = 4.5 A

4 5 7 8 10 11 13 14

3

6

9

, FORCED GAIN

h

FE

12 15

Figure 10. Inductive Storage Time, tsi(hFE)

I

= IC/2

B(off)

= 300 V

V

CC

PW = 20 ms

off

I

= IC/2

B(off)

V

= 15 V

CC

= 300 V

V

Z

L

= 200 mH

C

400

350

300

250

200

t, TIME (ns)

150

I

= IC/2

B(off)

100

V

= 15 V

CC

= 300 V

V

50

Z

L

= 200 mH

C

0

123 5

t

fi

48

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Switching, t

IC/IB = 5

t

c

TJ = 25°C
T

= 125°C

J

67

and t

c

fi

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300

t, TIME (ns)

250

200

150

TJ = 25°C
T

= 125°C

J

t

fi

t

c

I

B(off)

V

= 15 V

CC

= 300 V

V

Z

L

= 200 mH

C

= IC/2

100

50

478123 56

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Inductive Switching, t

and t

c

fi

IC/IB = 10

4

MJE18008G, MJF18008G

TYPICAL SWITCHING CHARACTERISTICS

(I

= IC/2 for all switching)

160

150

140

130

120

110

100

, FALL TIME (ns)

fi

t

90

80

70

60

3

IC = 4.5 A

TJ = 25°C
T

= 125°C

J

4 67891011121314

515

, FORCED GAIN

h

FE

IC = 2 A

Figure 13. Inductive Fall Time

GUARANTEED SAFE OPERATING AREA INFORMATION

100

DC (MJE18008)

5 ms

1 ms

10

1

DC (MJF18008)

0.1

, COLLECTOR CURRENT (AMPS)

C

I

0.01
10

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

100 1000

Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe

1,0

SECOND BREAKDOWN

POWER DERATING FACTOR

0,8

0,6

0,4

0,2

0,0

THERMAL DERATING

20

40 60 100 120

T

80 140 160

, CASE TEMPERATURE (°C)

C

Figure 17. Forward Bias Power Derating

There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I

B2

10 ms 1 ms

EXTENDED

SOA

DERATING

I

B(off)

V

= 15 V

CC

= 300 V

V

Z

L

= 200 mH

C

C

= IC/2

− V

CE

400

I

= IC/2

350

300

250

200

150

, CROSSOVER TIME (ns)

C

T

100

50

35 154 67891011121314

IC = 4.5 A

TJ = 25°C
T

= 125°C

J

IC = 2 A

hFE, FORCED GAIN

B(off)

V

= 15 V

CC

= 300 V

V

Z

L

= 200 mH

C

Figure 14. Inductive Crossover Time

9

800

TC ≤ 125°C
I

≥ 4

C/IB

L

= 500 mH

C

-5 V

8

7

6

5

4

3

2

, COLLECTOR CURRENT (AMPS)

C

I

1

0

0 200

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

V

BE(off)

400

= 0 V

-1, 5 V

600 1000

Operating Area

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 15 is
based on T

= 25°C; T

C

is variable depending on power

J(pk)

level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T

> 25°C. Second

C

breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown in
Figure 15 may be found at any case temperature by using the
appropriate curve on Figure 17. T

may be calculated

J(pk)

from the data in Figure 20 and 21. At any case temperatures,
thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn−off with the
base−to−emitter junction reverse−biased. The safe level is
specified as a reverse−biased safe operating area (Figure 16).
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode.

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5

MJE18008G, MJF18008G

5

V

CE

4

3

2

1

0

VOLTS

-1

-2

-3

-4
I

B

-5

012345678

Figure 18. Dynamic Saturation Voltage Measurements

1 ms

dyn 1 ms

90% I

dyn 3 ms

B

3 ms

TIME

+15 V

+10 V

COMMON

-V

off

1 mF

MPF930

50 W

150 W

3 W

MPF930

500 mF

100 W

3 W

10

I

9

C

8

7

t

si

6

5

V

CLAMP

10% V

CLAMP

90% I

C

t

fi

t

c

10% I

C

4

I

B

3

90% IB1

2

1

0

01234567 8

TIME

Figure 19. Inductive Switching Measurements

100 mF

PEAK

V

CE

V

R

B1

I

out

CE

IB1

I

B

A

2

I

R

B2

V(BR)CEO(sus)

L = 10 mH
RB2 = ∞
V

= 20 VOLTS

CC

I

(pk) = 100 mA

C

1 mF

B

INDUCTIVE SWITCHING

L = 200 mH
RB2 = 0
V

= 15 VOLTS

CC

RB1 SELECTED FOR
DESIRED I

150 W

3 W

MTP8P10

MTP8P10

MUR105

MJE210

MTP12N10

I

PEAK

C

RBSOA

L = 500 mH
RB2 = 0
V

= 15 VOLTS

CC

RB1 SELECTED

1

B

FOR DESIRED I

1

B

Table 1. Inductive Load Switching Drive Circuit

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6

1

MJE18008G, MJF18008G

TYPICAL THERMAL RESPONSE

D = 0.5

0.2

0.1

0.1

0.05

P

(pk)

R

(t) = r(t) R

q

JC

R

= 1.0°C/W MAX

q

JC

q

JC

D CURVES APPLY FOR POWER

(NORMALIZED)

0.02

SINGLE PULSE

t

1

t

2

DUTY CYCLE, D = t1/t

PULSE TRAIN SHOWN
READ TIME AT t
T

- TC = P

J(pk)

2

(pk)

1

R

q

JC

r(t), TRANSIENT THERMAL RESISTANCE

0.01

0.01 0.1 1 10 100 1000

Figure 20. Typical Thermal Response (Z

t, TIME (ms)

(t)) for MJE18008

q

JC

1

D = 0.5

0.2

0.1

0.1

P

(pk)

R

(t) = r(t) R

q

JC

R

= 2.78°C/W MAX

q

JC

q

JC

D CURVES APPLY FOR POWER

(NORMALIZED)

0.05

r(t), TRANSIENT THERMAL RESISTANCE

0.02

0.01

0.01 0.1 1 10 100 100000

SINGLE PULSE

t

1

t

2

DUTY CYCLE, D = t1/t

PULSE TRAIN SHOWN
READ TIME AT t
T

- TC = P

J(pk)

2

(pk)

1000 10000

1

R

q

JC

t, TIME (ms)

Figure 21. Typical Thermal Response (Z

(t)) for MJF18008

q

JC

(t)

(t)

ORDERING INFORMATION

Device Package Shipping

MJE18008G TO−220AB

(Pb−Free)

MJF18008G TO−220 (Fullpack)

(Pb−Free)

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7

50 Units / Rail

50 Units / Rail

MJE18008G, MJF18008G

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED

CLIP

Figure 22a. Screw or Clip Mounting Position

for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

FULLY ISOLATED

PACKAGE

CLIP

LEADS

HEATSINK

0.110″ MIN

Figure 22b. Clip Mounting Position

for Isolation Test Number 2

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTING INFORMATION**

4-40 SCREW

PLAIN WASHER

LEADS

HEATSINK

MOUNTED

0.099″ MIN

Figure 22c. Screw Mounting Position

for Isolation Test Number 3

FULLY ISOLATED

PACKAGE

0.099″ MIN

LEADS

HEATSINK

CLIP

HEATSINK

COMPRESSION WASHER

NUT

HEATSINK

Figure 23a. Screw−Mounted Figure 23b. Clip−Mounted

Figure 23. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting

technique, a screw torque of 6 to 8 in

.

lbs is sufficient to provide maximum power dissipation capability. The compres­sion washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess
of 20 in
Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in

.

lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

.

lbs without adversely
affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semi­conductor does not recommend exceeding 10 in

** For more information about mounting power semiconductors see Application Note AN1040.

.

lbs of mounting torque under any mounting conditions.

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8

MJE18008G, MJF18008G

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

H

K

Z

L

V

G

D

N

C

S

R

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.036 0.64 0.91
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

TO−220 FULLPAK

CASE 221D−03

ISSUE K

SEATING

−T−

PLANE

F

−B−

Q

C

S

U

A

123

H

G
N

−Y−

J

R

K

L

D

3 PL

M

M

0.25 (0.010) Y

B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH

3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.

INCHES

DIMAMIN MAX MIN MAX

0.617 0.635 15.67 16.12

B 0.392 0.419 9.96 10.63
C 0.177 0.193 4.50 4.90
D 0.024 0.039 0.60 1.00

F 0.116 0.129 2.95 3.28
G 0.100 BSC 2.54 BSC
H 0.118 0.135 3.00 3.43

J 0.018 0.025 0.45 0.63
K 0.503 0.541 12.78 13.73

L 0.048 0.058 1.23 1.47
N 0.200 BSC 5.08 BSC
Q 0.122 0.138 3.10 3.50
R 0.099 0.117 2.51 2.96

S 0.092 0.113 2.34 2.87
U 0.239 0.271 6.06 6.88

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

MILLIMETERS

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