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MJF18008
Datasheet (Motorola)
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Datasheet MJF18008, MJE18008 Datasheet (Motorola)

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Page 1
1
Motorola Bipolar Power Transistor Device Data
  
SWITCHMODE
NPN Bipolar Power Transistor For Switching Power Supply Applications
• Improved Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain h
FE
— Fast Switching — No Coil Required in Base Circuit for Turn–Off (No Current Tail)
• Tight Parametric Distributions are Consistent Lot–to–Lot
• Two Package Choices: Standard TO–220 or Isolated TO–220
• MJF18008, Case 221D, is UL Recognized at 3500 V
RMS
: File #E69369
MAXIMUM RATINGS
Rating
Symbol
MJE18008
MJF18008
Unit
Collector–Emitter Sustaining Voltage
V
CEO
450
Vdc
Collector–Emitter Breakdown Voltage
V
CES
1000
Vdc
Emitter–Base Voltage
V
EBO
9.0
Vdc
Collector Current — Continuous
— Peak(1)
I
C
I
CM
8.0 16
Adc
Base Current — Continuous
— Peak(1)
I
B
I
BM
4.0
8.0
Adc
RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a
(for 1 sec, R.H. < 30%, Test No. 1 Per Fig. 22b TC = 25_C) Test No. 1 Per Fig. 22c
V
ISOL
— — —
4500 3500 1500
Volts
Total Device Dissipation (TC = 25°C)
Derate above 25_C
P
D
125
1.0
45
0.36
Watts W/_C
Operating and Storage Temperature
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18008
MJF18008
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
1.0
62.5
2.78
62.5
_
C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
T
L
260
_
C
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
V
CEO(sus)
450
—
—
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
Collector Cutoff Current (VCE = Rated V
CEO
, IB = 0)
I
CEO
—
—
100
ÎÎÎ
ÎÎÎ
µAdc
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
(TC = 125_C)
Collector Cutoff Current (VCE = 800 V, VEB = 0) (TC = 125_C)
I
CES
— — —
— — —
100 500 100
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
I
EBO
—
—
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
µAdc
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. (continued) (2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value. Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18008/D
Motorola, Inc. 1995
MJE18008 MJF18008
POWER TRANSISTOR
8.0 AMPERES 1000 VOLTS
45 and 125 WATTS
*Motorola Preferred Device
* *
CASE 221A–06
TO–220AB
MJE18008
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
MJF18008
REV 1
Page 2
 
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25_C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Base–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc)
V
BE(sat)
— —
0.82
0.92
1.1
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.2 Adc)
(TC = 125_C)
(IC = 4.5 Adc, IB = 0.9 Adc)
(TC = 125_C)
V
CE(sat)
— — — —
0.3
0.3
0.35
0.4
0.6
0.65
0.7
0.8
Vdc
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)
(TC = 125_C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
h
FE
14 —
6.0
5.0 11 11 10
—
28
9.0
8.0 15 16 20
34 — — — — — —
—
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
f
T
—
13
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
ob
—
100
150
pF
Input Capacitance (VEB = 8.0 V)
C
ib
—
1750
2500
pF
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.0 µs
(TC = 125°C)
— —
5.5
11.5
— —
Determined 1.0 µs and
3.0 µs respectively after rising IB1 reaches 90% of
IB1 = 200 mAdc
VCC = 300 V)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.0 µs
(TC = 125°C)
— —
3.5
6.5
— —
rising IB1 reaches 90% of final I
B1
(see Figure 18)
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.0 µs
(TC = 125°C)
— —
11.5
14.5
— —
IB1 = 1.0 Adc
VCC = 300 V)
ÎÎÎ
ÎÎÎ
ÎÎÎ
3.0 µs
(TC = 125°C)
— —
2.4
9.0
— —
SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 µs)
Turn–On Time
(TC = 125°C)
t
on
— —
200 190
300
—
ns
Turn–Off Time
(TC = 125°C)
t
off
— —
1.2
1.5
2.5 —
µs
Turn–On Time
(TC = 125°C)
t
on
— —
100 250
180
—
ns
Turn–Off Time
(TC = 125°C)
t
off
— —
1.6
2.0
2.5 —
µs
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time
(TC = 125°C)
t
fi
— —
100 120
180
—
ns
Storage Time
(TC = 125°C)
t
si
— —
1.5
1.9
2.75 —
µs
Crossover Time
(TC = 125°C)
t
c
— —
250 230
350
—
ns
Fall Time
(TC = 125°C)
t
fi
— —
85
135
150
—
ns
Storage Time
(TC = 125°C)
t
si
— —
2.0
2.6
3.2 —
µs
Crossover Time
(TC = 125°C)
t
c
— —
210 250
300
—
ns
Dynamic Saturation Voltage:
(IC = 2.0 Adc
(IC = 5.0 Adc
V
CE(dsat)
(IC = 2.0 Adc, IB1 = 0.2 Adc, IB2 = 1.0 Adc, VCC = 300 V)
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc, VCC = 300 V)
(IC = 2.0 Adc, IB1 = 0.2 Adc,
IB2 = 1.0 Adc)
(IC = 4.5 Adc, IB1 = 0.9 Adc,
IB2 = 2.25 Adc)
Vdc
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3
Motorola Bipolar Power Transistor Device Data
h
FE
, DC CURRENT GAIN
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
C, CAPACITANCE (pF)
0.01
100
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
h
FE
, DC CURRENT GAIN
Figure 2. DC Current Gain @ 5 Volts
V
CE
, VOLTAGE (VOLTS)
Figure 3. Collector Saturation Region Figure 4. Collector–Emitter Saturation Voltage
Figure 5. Base–Emitter Saturation Region Figure 6. Capacitance
10
1
1 10
100
10
1
0.01 0.1 1 10
2
0.01 IB, BASE CURRENT (AMPS)
10
1
0.01
0.01 IC COLLECTOR CURRENT (AMPS)
0.1
1.3
1
0.8
0.4
0.01 IC, COLLECTOR CURRENT (AMPS)
0.1 1 10
1000
100
1
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1 1000
1
0
0.1
1 10
10000
10
0.1
0.1 1 10
10
TJ = 25°C
TJ = – 20°C
TJ = 125°C
TJ = 25°C
V
CE
, VOLTAGE (VOLTS)
IC/IB = 10
IC/IB = 5
V
BE
, VOLTAGE (VOLTS)
1.1
0.9
0.6
0.5
0.5
1.5
1.2
TJ = 25°C
3 A 5 A 8 A 10 A
TJ = 25°C TJ = 125
°
C
TJ = 25°C
TJ = 125°C
IC/IB = 5 IC/IB = 10
TJ = – 20°C
IC = 1 A
0.7
C
ob
100
C
ib
TYPICAL STATIC CHARACTERISTICS
VCE = 1 V
VCE = 5 V
TJ = 25°C f = 1 MHz
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 
4
Motorola Bipolar Power Transistor Device Data
Figure 7. Resistive Switching, t
on
Figure 8. Resistive Switching, t
off
IC, COLLECTOR CURRENT (AMPS)
IC COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
0
1500
IC, COLLECTOR CURRENT (AMPS)
t, TIME (ns)
Figure 9. Inductive Storage Time, t
si
Figure 10. Inductive Storage Time, tsi(hFE)
Figure 11. Inductive Switching, tc and t
fi
IC/IB = 5
Figure 12. Inductive Switching, tc and t
fi
IC/IB = 10
1000
0
4 8
2000
0
3500
3
hFE, FORCED GAIN
6
400
50
0
IC, COLLECTOR CURRENT (AMPS)
4 8
250
200
50
2000
0
12 15
300
150
2
2 5 8
IC/IB = 5
t
si
, STORAGE TIME (ns)
200 150 100
6
500
IC/IB = 10
4 82 6
500
1000
1500
2500
3000
3500
t, TIME (ns)
t, TIME (ns)
1 3 4 6 7
1000
1500
2500
9
5000
2000
0
500
1000
1500
2500
3000
3500
1 2 3 5
t, TIME (ns)
4 7 81 2 3 5 6
t, TIME (ns)
1 3 5 7 1 3 5 7
500
3000
4 5 7 8 10 11 13 14
250
100
IC/IB = 10
I
B(off)
= IC/2 VCC = 15 V VZ = 300 V LC = 200
µ
H
4000
4500
300
350
I
B(off)
= IC/2 VCC = 300 V PW = 20 µs
IC/IB = 5 IC/IB = 10
TJ = 125°C
TJ = 25°C
4500 4000
IC/IB = 5
I
B(off)
= IC/2 VCC = 15 V VZ = 300 V LC = 200
µ
H
IC = 2 A
I
B(off)
= IC/2 VCC = 15 V VZ = 300 V LC = 200
µ
H
6 7
t
fi
t
c
t
fi
t
c
TJ = 25°C TJ = 125
°
C
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
IC = 4.5 A
I
B(off)
= IC/2 VCC = 15 V VZ = 300 V LC = 200
µ
H
I
B(off)
= IC/2 VCC = 300 V PW = 20 µs
TJ = 25°C TJ = 125
°
C
TJ = 25°C TJ = 125
°
C
TJ = 25°C TJ = 125
°
C
TJ = 25°C TJ = 125
°
C
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 
5
Motorola Bipolar Power Transistor Device Data
I
C
, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
hFE, FORCED GAIN
T
C
, CROSSOVER TIME (ns)
3
160
hFE, FORCED GAIN
Figure 13. Inductive Fall Time
t
fi
, FALL TIME (ns)
Figure 14. Inductive Crossover Time
I
C
, COLLECTOR CURRENT (AMPS)
Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe
Operating Area
Figure 17. Forward Bias Power Derating
60
5 15
400
200
50
100
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
9
6
0
0 200
1,0
0,8
0,2
0,0
20
TC, CASE TEMPERATURE (
°
C)
80 140 160
1
0.01
3
600 1000
4
100 1000
DC (MJE18008)
5 ms
POWER DERATING FACTOR
0,6
0,4
6 7 8 9 10 11 12 13 14
70
80
140
3 5 154 6 7 8 9 10 11 12 13 14
300
100
IC = 2 A
IC = 4.5 A
TJ = 25°C TJ = 125
°
C
10
0.1
EXTENDED
SOA
1 ms 10 µs 1 µs
400
2 1
4
5
40 60 100 120
SECOND BREAKDOWN
DERATING
DC (MJF18008)
100
120
350
7
8
There are two limitations on the power handling ability of a transistor: average junction temperature and second break­down. Safe operating area curves indicate IC– VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on T
C
= 25°C; T
J(pk)
is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must b e derated when TC > 25°C. S econd b reakdown limitations do not derate the same as thermal l imitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. T
J(pk)
may be calculated from the data in Figure 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simulta­neously during turn–off with the base–to–emitter junction reverse–biased. The safe level is specified as a reverse– biased safe operating area (Figure 16). This rating is verified under c lamped c onditions s o that t he device i s never subjected to an avalanche mode.
I
B(off)
= IC/2 VCC = 15 V VZ = 300 V LC = 200
µ
H
150
130
110
90
150
250
800
I
B(off)
= IC/2 VCC = 15 V VZ = 300 V LC = 200
µ
H
IC = 2 A
IC = 4.5 A
–1, 5 V
– 5 V
TC ≤ 125°C IC/IB
≥
4
LC = 500
µ
H
GUARANTEED SAFE OPERATING AREA INFORMATION
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
TJ = 25°C TJ = 125
°
C
THERMAL DERATING
V
BE(off)
= 0 V
Page 6
 
6
Motorola Bipolar Power Transistor Device Data
–5
–4
–3
–2
–1
0
1
2
3
4
5
0 1 2 3 4 5 6 7 8
Figure 18. Dynamic Saturation Voltage Measurements
TIME
V
CE
VOLTS
I
B
Figure 19. Inductive Switching Measurements
1 µs
3 µs
90% I
B
dyn 1 µs
dyn 3 µs
10
9 8 7 6 5 4 3 2 1 0
0 1 2 3 4 5 6 7 8
TIME
I
B
I
C
t
si
V
CLAMP
10% V
CLAMP
90% IB1
10% I
C
t
c
90% I
C
t
fi
Table 1. Inductive Load Switching Drive Circuit
+15 V
1
µ
F
150
Ω
3 W
100
Ω
3 W
MPF930
+10 V
50
Ω
COMMON
–V
off
500
µ
F
MPF930
MTP8P10
MUR105
MJE210
MTP12N10
MTP8P10
150
Ω
3 W
100
µ
F
I
out
A
1
µ
F
IC PEAK
VCE PEAK
V
CE
I
B
IB1
IB2
V(BR)CEO(sus)
L = 10
mH
RB2 =
∞
VCC = 20 VOLTS IC(pk) = 100 mA
INDUCTIVE SWITCHING
L = 200
µ
H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1
RBSOA
L = 500
µ
H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1
R
B2
R
B1
Page 7
 
7
Motorola Bipolar Power Transistor Device Data
0.01 t, TIME (ms)
Figure 20. Typical Thermal Response (Z
θJC
(t)) for MJE18008
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
R
θ
JC
(t) = r(t) R
θ
JC
R
θ
JC
= 1.0
°
C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t
1
T
J(pk)
– TC = P
(pk)
R
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
0.2
0.02
0.1
D = 0.5
SINGLE PULSE
0.01 0.1 1 10 100 1000
0.1
1
0.01
Figure 21. Typical Thermal Response (Z
θJC
(t)) for MJF18008
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
R
θ
JC
(t) = r(t) R
θ
JC
R
θ
JC
= 2.78
°
C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t
1
T
J(pk)
– TC = P
(pk)
R
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
0.2
0.02
0.1
SINGLE PULSE
0.01 0.1 1 10 100 100000
0.1
1
1000 10000
0.05
0.05
D = 0.5
TYPICAL THERMAL RESPONSE
t, TIME (ms)
Page 8
 
8
Motorola Bipolar Power Transistor Device Data
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.110
″
MIN
Figure 22a. Screw or Clip Mounting Position
for Isolation Test Number 1
*Measurement made between leads and heatsink with all leads shorted together
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
CLIP
0.107
″
MIN
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
HEATSINK
0.107″ MIN
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
TEST CONDITIONS FOR ISOLATION TESTS*
4–40 SCREW
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
NUT
CLIP
HEATSINK
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in.lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in.lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in.lbs without adversely affecting the pack­age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in.lbs of mounting torque under any mounting conditions.
Figure 23. Typical Mounting Techniques
for Isolated Package
Figure 23a. Screw–Mounted Figure 23b. Clip–Mounted
MOUNTING INFORMATION**
**For more information about mounting power semiconductors see Application Note AN1040.
Page 9
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9
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A–06
TO–220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING PLANE
–T–
C
S
T
U
R J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
DIMAMIN MAX MIN MAX
MILLIMETERS
0.621 0.629 15.78 15.97
INCHES
B 0.394 0.402 10.01 10.21 C 0.181 0.189 4.60 4.80 D 0.026 0.034 0.67 0.86
F 0.121 0.129 3.08 3.27 G 0.100 BSC 2.54 BSC H 0.123 0.129 3.13 3.27
J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52 N 0.200 BSC 5.08 BSC Q 0.126 0.134 3.21 3.40 R 0.107 0.111 2.72 2.81 S 0.096 0.104 2.44 2.64 U 0.259 0.267 6.58 6.78
–B–
–Y–
G
N
D
L
K
H
A
F
Q
3 PL
1 2 3
M
B
M
0.25 (0.010) Y
SEATING PLANE
–T–
U
C
S
J
R
CASE 221D–02
(ISOLATED TO–220 TYPE)
UL RECOGNIZED: FILE #E69369
ISSUE D
Page 10
 
10
Motorola Bipolar Power Transistor Device Data
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