Datasheet MJF18004G Specification

MJE18004G, MJF18004G

SWITCHMODE

NPN Bipolar Power Transistor
For Switching Power Supply Applications

The MJE/MJF18004G have an applications specific state−of−the−art
die designed for use in 220 V line−operated SWITCHMODE Power
supplies and electronic light ballasts.

Features

• Improved Efficiency Due to Low Base Drive Requirements:

♦ High and Flat DC Current Gain h
♦

Fast Switching

♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)

• Full Characterization at 125_C

• ON Semiconductor Six Sigma Philosophy Provides Tight and

Reproducible Parametric Distributions

• Two Package Choices: Standard TO−220 or Isolated TO−220

• MJF18004, Case 221D, is UL Recognized at 3500 V

#E69369

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage V

Collector−Base Breakdown Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

Collector Current − Peak (Note 1) I

Base Current − Continuous I

Base Current − Peak (Note 1) I

RMS Isolation Voltage (Note 2)

(for 1 sec, R.H. < 30%, T

Total Device Dissipation @ TC = 25_C

Derate above 25°C MJE18004

Operating and Storage Temperature TJ, T

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

2. Proper strike and creepage distance must be provided.

Test No. 1 Per Figure 22a
Test No. 2 Per Figure 22b
Test No. 3 Per Figure 22c

Characteristics Symbol Max Unit

= 25_C)

A

MJE18004
MJF18004

MJF18004

MJE18004
MJF18004

FE

V

R

R

CEO

CES

EBO

C

CM

B

BM

ISOL

P

D

q

JC

q

JA

T

L

stg

: File

RMS

450 Vdc

1000 Vdc

9.0 Vdc

5.0 Adc

10 Adc

2.0 Adc

4.0 Adc

MJF18004

4500
3500
1500

75
35

0.6

0.28

−65 to 150

1.65

3.55

62.5

260

V

W

W/_C

_C

_C/W

_C/W

_C

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POWER TRANSISTOR

5.0 AMPERES
1000 VOLTS

35 and 75 WATTS

COLLECTOR

2,4

1

BASE

3

EMITTER

MARKING

DIAGRAMS

4

MJE18004G

AYW W

TO−220AB

1

2

3

1

2

3

G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week

See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.

*For additional information on our Pb−Free strategy

and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.

CASE 221A−09

STYLE 1

TO−220 FULLPACK

CASE 221D

STYLE 2

UL RECOGNIZED

MJF18004G

ORDERING INFORMATION

AYW W

© Semiconductor Components Industries, LLC, 2013

August, 2013 − Rev. 11

1 Publication Order Number:

MJE18004/D

MJE18004G, MJF18004G

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise specified)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) V

Collector Cutoff Current (VCE = Rated V

Collector Cutoff Current (VCE = Rated V

Collector Cutoff Current (V

= 800 V, VEB = 0) (TC = 125_C)

CE

, IB = 0) I

CEO

, VEB = 0) (TC = 25_C)

CES

(T

= 125_C)

C

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) I

ON CHARACTERISTICS

Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc)

Base−Emitter Saturation Voltage (I

= 2.0 Adc, IB = 0.4 Adc)

C

Collector−Emitter Saturation Voltage

(I

= 1.0 Adc, IB = 0.1 Adc)

C

(TC = 125_C)

(IC = 2.0 Adc, IB = 0.4 Adc)

= 125_C)

(T

= 2.5 Adc, IB = 0.5 Adc)

(I

C

C

DC Current Gain (IC = 1.0 Adc, VCE = 2.5 Vdc)

(TC = 125_C)

DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc)

= 125_C)

(T

DC Current Gain (I

DC Current Gain (I

= 2.0 Adc, VCE = 1.0 Vdc)

C

= 10 mAdc, VCE = 5.0 Vdc)

C

C

= 125_C)

(T

C

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance (VEB = 8.0 V)

Dynamic Saturation Voltage:

Determined 1.0 ms and

3.0 ms respectively after
rising I
final I

reaches 90% of

B1

B1

(see Figure 18)

(IC = 1.0 Adc

I

= 100 mAdc

B1

= 300 V)

V

CC

(IC = 2.0 Adc

I

= 400 mAdc

B1

= 300 V)

V

CC

1.0 ms

3.0 ms

1.0 ms

3.0 ms

(TC = 125°C)

(TC = 125°C)

(TC = 125°C)

(TC = 125°C)

Symbol Min Typ Max Unit

CEO(sus)

CEO

I

CES

EBO

V

BE(sat)

V

CE(sat)

h

FE

f

T

C

ob

C

ib

V

CE(dsat)

450 − − Vdc

− − 100

−

−

−

−

−

−

100
500
100

− − 100

−

−

0.82

0.92

1.1

1.25

mAdc

mAdc

mAdc

Vdc

Vdc

−

−

−

−

−

12

−

14

−

6.0

−

10

−

−

−

−

−

−

−

−

−

−

−

0.25

0.29

0.3

0.36

0.5

21
20

−

32
11

7.5
22

13

50

800

6.8
14

2.4

5.6

11.3

15.5

1.3

6.1

0.5

0.6

0.45

0.8

0.75

−

−

34

−

−

−

−

−

65

1000

−

−

−

−

−

−

−

−

MHz

pF

pF

Vdc

−

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2

MJE18004G, MJF18004G

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic

= 25_C unless otherwise specified)

C

Symbol

SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)

Turn−On Time

Turn−Off Time

(IC = 1.0 Adc, IB1 = 0.1 Adc,
I

= 0.5 Adc, VCC = 300 V)

B2

(TC = 125°C)

t

on

t

off

(TC = 125°C)

Turn−On Time

Turn−Off Time

(IC = 2.0 Adc, IB1 = 0.4 Adc,
I

= 1.0 Adc, VCC = 300 V)

B1

(TC = 125°C)

t

on

t

off

(TC = 125°C)

Turn−On Time

Storage Time

(IC = 2.5 Adc, IB1 = 0.5 Adc,
I

= 0.5 Adc, VCC = 250 V)

B2

(TC = 125°C)

t

on

t

(TC = 125°C)

Fall Time

t

(TC = 125°C)

SWITCHING CHARACTERISTICS: Inductive Load (V

Fall Time

(IC = 1.0 Adc, IB1 = 0.1 Adc,

I

= 0.5 Adc)

B2

Storage Time

= 300 V, VCC = 15 V, L = 200 mH)

clamp

(TC = 125°C)

t

t

(TC = 125°C)

Crossover Time

t

(TC = 125°C)

Fall Time

Storage Time

(IC = 2.0 Adc, IB1 = 0.4 Adc,

I

= 1.0 Adc)

B2

(TC = 125°C)

t

t

(TC = 125°C)

Crossover Time

t

(TC = 125°C)

Fall Time

Storage Time

(IC = 2.5 Adc, IB1 = 0.5 Adc,

I

= 0.5 Adc,

B2

= −5.0 Vdc)

V

BE(off)

(TC = 125°C)

t

t

(TC = 125°C)

Crossover Time

t

(TC = 125°C)

Min

−

−

−

−

−

−

−

−

−

−

s

−

−

f

−

−

fi

−

−

si

−

−

c

−

−

fi

−

−

si

−

−

c

−

−

fi

−

−

si

−

−

c

−

−

Typ

210
180

1.0

1.3

75
90

1.5

1.8

450
900

2.0

2.2

275
500

100
100

1.1

1.4

180
160

90

150

1.7

2.2

180
250

70

100

0.75

1.0

250
250

Max

300

−

1.7

−

110

−

2.5

−

800

1400

3.0

3.5

400
800

150

−

1.7

−

250

−

175

−

2.5

−

300

−

130
175

1.0

1.3

350
500

Unit

ns

ms

ns

ms

ns

ms

ns

ns

ms

ns

ns

ms

ns

ns

ms

ns

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3

MJE18004G, MJF18004G

TYPICAL STATIC CHARACTERISTICS

100

, DC CURRENT GAIN

FE

h

10

2.0

1.5

1.0

1

0.01

TJ = 125°C

TJ = -20°C

TJ = 25°C

0.10

I

, COLLECTOR CURRENT (AMPS)

C

1.00 10.00

Figure 1. DC Current Gain @ 1 Volt

1.5 A
2 A 3 A 4 A

VCE = 1 V

TJ = 25°C

100

VCE = 5 V

TJ = 125°C

TJ = -20°C

10

, DC CURRENT GAIN

FE

h

1

0.01 0.10 1.00 10.00

TJ = 25°C

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volts

10.00

1.00

, VOLTAGE (VOLTS)

V

, VOLTAGE (VOLTS)

V

CE

BE

0.5

0

0.01

IC = 0.5 A

1 A

0.10 1.00 10.00

, BASE CURRENT (AMPS)

I

B

, VOLTAGE (VOLTS)

V

0.10

CE

0.01

0.01

IC/IB = 10

IC/IB = 5

0.10

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.01

TJ = 25°C

TJ = 125°C

IC/IB = 10
I

= 5

C/IB

0.10 1.00 10.00

, COLLECTOR CURRENT (AMPS)

I

C

10000

C

ib

1000

C

100

C, CAPACITANCE (pF)

10

ob

1

1 100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Base−Emitter Saturation Region Figure 6. Capacitance

TJ = 25°C
T

= 125°C

J

1.00 10.00

TJ = 25°C
f = 1 MHz

10

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4

MJE18004G, MJF18004G

TYPICAL SWITCHING CHARACTERISTICS

(I

= IC/2 for all switching)

B2

t, TIME (ns)

1800

1600

1400

1200

1000

800

600

I

= IC/2

B(off)

= 300 V

V

CC

PW = 20 ms

IC/IB = 10

TJ = 25°C
T

J

IC/IB = 5

= 125°C

3000

2500

2000

1500

t, TIME (ns)

1000

400

200

0

0

1350 35

2

4

500

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Resistive Switching, t

3500

on

3500

VZ = 300 V

3000

IC/IB = 5

2500

V

= 15 V

CC

I

B(off)

L

= 200 mH

C

= IC/2

3000

2500

2000

2000

1500

t, TIME (ns)

1000

500

0

034

TJ = 25°C
T

= 125°C

J

1

COLLECTOR CURRENT (AMPS)

I

C

IC/IB = 10

25

1500

, STORAGE TIME (ns)

si

t

1000

500

IC/IB = 5

TJ = 25°C
T

= 125°C

J

IC/IB = 10

0

1

, COLLECTOR CURRENT (AMPS)

I

C

Figure 8. Resistive Switching, t

TJ = 25°C
T

= 125°C

J

IC = 1 A

3

4 5 7 8 10 11 13 14

6

9

h

, FORCED GAIN

FE

I

= IC/2

B(off)

V

= 300 V

CC

PW = 20 ms

42

off

VZ = 300 V
V

= 15 V

CC

= IC/2

I

B(off)

L

= 200 mH

C

IC = 2 A

12 15

Figure 9. Inductive Storage Time, t

300

250

200

150

t, TIME (ns)

100

VZ = 300 V
V

CC

50

I

B(off)

L

C

0

023

Figure 11. Inductive Switching, t

= 15 V

= IC/2

= 200 mH

t

fi

t

c

TJ = 25°C
T

= 125°C

J

11

I

, COLLECTOR CURRENT (AMPS)

C

and tfi, IC/IB = 5 Figure 12. Inductive Switching, tc and tfi, IC/IB = 10

c

si

250

200

150

t, TIME (ns)

100

50

45

0

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5

Figure 10. Inductive Storage Time, tsi(hFE)

TJ = 25°C
T

= 125°C

J

t

c

VZ = 300 V
V

= 15 V

CC

= IC/2

I

B(off)

L

= 200 mH

C

IC, COLLECTOR CURRENT (AMPS)

t

fi

45023

0

160

150

140

130

120

110

, FALL TIME (ns)

100

fi

t

90

80

70

3 6 12 159

4 5 7 8 10 11 13 14

IC = 1 A

Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time

100

DC (MJE18004)

10

1.0

MJE18004G, MJF18004G

TYPICAL SWITCHING CHARACTERISTICS

(I

= IC/2 for all switching)

B2

TJ = 25°C
T

= 125°C

J

IC = 2 A

hFE, FORCED GAIN hFE, FORCED GAIN

VZ = 300 V
V

= 15 V

CC

= IC/2

I

B(off)

L

= 200 mH

C

GUARANTEED SAFE OPERATING AREA INFORMATION

1ms5ms

1ms10ms50ms

Extended

SOA

300

250

200

150

IC = 2 A

, CROSSOVER TIME (ns)

c

100

t

50

3 6 12 15

4 5 13 14

6.0

5.0

4.0

3.0

IC = 1 A

TJ = 25°C
T

= 125°C

J

978 1011

VZ = 300 V
V

= 15 V

CC

= IC/2

I

B(off)

L

= 200 mH

C

TC ≤ 125°C
I

≥ 4

C/IB

L

= 500 mH

C

DC (MJF18004)

0.1

, COLLECTOR CURRENT (AMPS)

C

I

0.01
10 1000100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 15. Forward Bias Safe Operating Area

1.0

0.8

0.6

0.4

POWER DERATING FACTOR

0.2

0

, CASE TEMPERATURE (°C)

T

C

THERMAL
DERATING

Figure 17. Forward Bias Power Derating

SECOND

BREAKDOWN

DERATING

2.0

, COLLECTOR CURRENT (AMPS)

1.0

V

C

I

0

400 600 110

=

BE(off)

0 V

500 800700 1000

-1.5 V

-5 V

900

Figure 16. Reverse Bias Safe Operating Area

There are two limitations on the power handling ability of a tran­sistor: average junction temperature and second breakdown. Safe
operating area curves indicate I

limits of the transistor that

C−VCE

must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate. The data
of Figure 15 is based on T

= 25°C; TJ(pk) is variable depending on

C

power level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T

≥ 25°C. Second break-

C

down limitations do not derate the same as thermal limitations. Al­lowable current at the voltages shown on Figure 15 may be found at
any case temperature by using the appropriate curve on Figure 17.
T

(pk) may be calculated from the data in Figures 20 and 21. At any

J

case temperatures, thermal limitations will reduce the power that
can be handled to values less the limitations imposed by second
breakdown. For inductive loads, high voltage and current must be
sustained simultaneously during turn−off with the base−to−emitter

16014012010080604020

junction reverse biased. The safe level is specified as a reverse−
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an ava­lanche mode.

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6

MJE18004G, MJF18004G

5

V

CE

4

3

2

dyn 1 ms

dyn 3 ms

1

0

VOLTS

-1

-2

-3

-4

-5
012345678

90% I

B

1 ms

I

B

3 ms

TIME

Figure 18. Dynamic Saturation Voltage Measurements

+15 V

150 W

3 W

MTP8P10

MTP8P10

MUR105

MJE210

MTP12N10

+10 V

COMMON

-V

off

1 mF

MPF930

50 W

150 W

3 W

MPF930

500 mF

100 W

3 W

10

t

c

90% I

t

fi

C

I

9

C

8

7

t

si

6

5

V

CLAMP

10% V

CLAMP

4

I

B

3

90% IB1

2

1

0

012 34567 8

TIME

Figure 19. Inductive Switching Measurements

PEAK

I

100 mF

PEAK

V

CE

V

R

B1

I

out

CE

IB1

I

B

A

I

2

R

B2

V(BR)CEO(sus)

L = 10 mH
RB2 = ∞
V

= 20 VOLTS

CC

I

(pk) = 100 mA

1 mF

C

B

INDUCTIVE SWITCHING

L = 200 mH
RB2 = 0
V

= 15 VOLTS

CC

RB1 SELECTED FOR
DESIRED I

1

B

C

RBSOA

L = 500 mH
RB2 = 0
V

CC

RB1 SELECTED
FOR DESIRED I

10% I

C

= 15 VOLTS

1

B

Table 1. Inductive Load Switching Drive Circuit

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7

1.00

MJE18004G, MJF18004G

TYPICAL THERMAL RESPONSE

D = 0.5

0.2

P

0.10

(pk)

0.1

t

0.05

0.02

0.01

0.01 0.10 1.00 10.00 100.00 100000

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

SINGLE PULSE

t, TIME (ms)

Figure 20. Typical Thermal Response (Z

1

t

2

DUTY CYCLE, D = t1/t

) for MJE18004

q

JC(t)

R

(t) = r(t) R

q

JC

R

= 1.25°C/W MAX

q

JC

D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
T

- TC = P

2

J(pk)

1000 10000

q

(pk)

JC

R

q

JC

1.00

D = 0.5

0.2

0.10

0.1

0.05

0.02

SINGLE PULSE

0.01

0.01 0.10 1.00 10.00 100.00 1000

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

t, TIME (ms)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

R

(t) = r(t) R

q

JC

R

= 3.12°C/W MAX

q

JC

D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
T

- TC = P

J(pk)

2

q

(pk)

JC

R

q

JC

1

(t)

1

(t)

Figure 21. Typical Thermal Response for MJF18004

ORDERING INFORMATION

Device Package Shipping

MJE18004G TO−220AB

(Pb−Free)

MJF18004G TO−220 (Fullpack)

(Pb−Free)

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8

50 Units / Rail

50 Units / Rail

MJE18004G, MJF18004G

TEST CONDITIONS FOR ISOLATION TESTS*

MOUNTED

CLIP

Figure 22a. Screw or Clip Mounting

Position for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

FULLY ISOLATED

PACKAGE

CLIP

LEADS

HEATSINK

0.110″ MIN

Figure 22b. Clip Mounting Position

for Isolation Test Number 2

MOUNTED

FULLY ISOLATED

PACKAGE

HEATSINK

LEADS

MOUNTING INFORMATION**

4-40 SCREW

PLAIN WASHER

0.099″ MIN

MOUNTED

FULLY ISOLATED

PACKAGE

HEATSINK

Figure 22c. Screw Mounting Position

for Isolation Test Number 3

CLIP

0.099″ MIN

LEADS

HEATSINK

COMPRESSION WASHER

NUT

HEATSINK

Figure 23a. Screw−Mounted Figure 23b. Clip−Mounted

Figure 23. Typical Mounting Techniques

for Isolated Package

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a
screw torque of 6 to 8 in
a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in
package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recom­mend exceeding 10 in

** For more information about mounting power semiconductors see Application Note AN1040.

.

lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain

.

lbs without adversely affecting the

.

lbs of mounting torque under any mounting conditions.

.

lbs will

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9

MJE18004G, MJF18004G

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

H

K

Z

L

V

G

D

N

C

S

R

J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.036 0.64 0.91
F 0.142 0.161 3.61 4.09
G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10

J 0.014 0.025 0.36 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

http://onsemi.com

10

MJE18004G, MJF18004G

PACKAGE DIMENSIONS

TO−220 FULLPAK

CASE 221D−03

ISSUE K

SEATING

−T−

PLANE

F

−B−

Q

C

S

U

A

123

H

G
N

−Y−

J

R

K

L

D

3 PL

M

M

0.25 (0.010) Y

B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH

3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.

INCHES

DIMAMIN MAX MIN MAX

0.617 0.635 15.67 16.12

B 0.392 0.419 9.96 10.63
C 0.177 0.193 4.50 4.90
D 0.024 0.039 0.60 1.00
F 0.116 0.129 2.95 3.28
G 0.100 BSC 2.54 BSC
H 0.118 0.135 3.00 3.43
J 0.018 0.025 0.45 0.63
K 0.503 0.541 12.78 13.73
L 0.048 0.058 1.23 1.47
N 0.200 BSC 5.08 BSC
Q 0.122 0.138 3.10 3.50
R 0.099 0.117 2.51 2.96
S 0.092 0.113 2.34 2.87
U 0.239 0.271 6.06 6.88

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

MILLIMETERS

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