Datasheet MJF122, MJF127 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

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For Isolated Package Applications

Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

• Electrically Similar to the Popular TIP122 and TIP127

• 100 V

CEO(sus)

• 5 A Rated Collector Current

• No Isolating Washers Required

• Reduced System Cost

• High DC Current Gain — 2000 (Min) @ IC = 3 Adc

• UL Recognized, File #E69369, to 3500 V

RMS

Isolation

MAXIMUM RATINGS

Rating

Symbol

Value

ÎÎÎ

Unit

Collector–Emitter Voltage

V

CEO

100

ÎÎÎ

Vdc

Collector–Base Voltage

V

CB

100

ÎÎÎ

Vdc

Emitter–Base Voltage

V

EB

5

ÎÎÎ

Vdc

RMS Isolation Voltage (1) Test No. 1 Per Fig. 14

(for 1 sec, R.H. < 30%, Test No. 2 Per Fig. 15 TA = 25_C) Test No. 3 Per Fig. 16

V

ISOL

4500 3500 1500

ÎÎÎ

V

RMS

Collector Current — Continuous

Peak

I

C

5 8

ÎÎÎ

Adc

Base Current

I

B

0.12

ÎÎÎ

Adc

Total Power Dissipation* @ TC = 25_C

Derate above 25_C

P

D

30

0.24

ÎÎÎ

Watts W/_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

P

D

2

0.016

ÎÎÎ

Watts W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +150

ÎÎÎ

I

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

ÎÎÎ

Unit

Thermal Resistance, Junction to Ambient

R

θJA

62.5

ÎÎÎ

_

C/W

Thermal Resistance, Junction to Case*

R

θJC

4.1

ÎÎÎ

_

C/W

Lead Temperature for Soldering Purpose

T

L

260

ÎÎÎ

_

C

*Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on

a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

(1) Proper strike and creepage distance must be provided.

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SEMICONDUCTOR TECHNICAL DATA

Order this document

by MF122/D

 Motorola, Inc. 1995

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COMPLEMENTARY

SILICON

POWER DARLINGTONS

5 AMPERES

100 VOLTS

30 WATTS





CASE 221D–02

TO–220 TYPE

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2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

ÎÎÎÎ

Symbol

Min

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

ÎÎÎÎ

V

CEO(sus)

100

—

ÎÎÎ

Vdc

Collector Cutoff Current

(VCE = 50 Vdc, IB = 0)

ÎÎÎÎ

I

CEO

—

10

ÎÎÎ

µAdc

Collector Cutoff Current

(VCB = 100 Vdc, IE = 0)

ÎÎÎÎ

I

CBO

—

10

ÎÎÎ

µAdc

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

I

EBO

—

2

ÎÎÎ

mAdc

ON CHARACTERISTICS (1)

DC Current Gain (IC = 0.5 Adc, VCE = 3 Vdc)

DC Current Gain (IC = 3 Adc, VCE = 3 Vdc)

ÎÎÎÎ

h

FE

1000 2000

— —

ÎÎÎ

—

Collector–Emitter Saturation Voltage (IC = 3 Adc, IB = 12 mAdc)

Collector–Emitter Saturation Voltage (IC = 5 Adc, IB = 20 mAdc)

ÎÎÎÎ

V

CE(sat)

— —

2

3.5

ÎÎÎ

Vdc

Base–Emitter On Voltage (IC = 3 Adc, VCE = 3 Vdc)

ÎÎÎÎ

V

BE(on)

—

2.5

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain (IC = 3 Adc, VCE = 4 Vdc, f = 1 MHz)

ÎÎÎÎ

h

fe

4

—

ÎÎÎ

—

Output Capacitance MJF127

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJF122

ÎÎÎÎ

C

ob

— —

300 200

ÎÎÎ

pF

(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2%.

Figure 1. Switching Times Test Circuit

VCC = 30 V IC/IB = 250 IB1 = I

B2

TJ = 25

°

C

0.1 0.7 100.5

0.3

2 5

5

IC, COLLECTOR CURRENT (AMP)

td @ V

BE(off)

= 0 V

t, TIME ( s)

µ

2

1

0.5

0.2

0.1

0.05

Figure 2. Typical Switching Times

t

s

t

f

0.3

3

0.2

1

0.07

0.7

3 7

PNP NPN

≈

120

≈

8 k

V

2

APPROX.

+8 V

V

1

APPROX.

–12 V

25

µ

s

R

B

51

D

1

+4 V

V

CC

–30 V

R

C

SCOPE

TUT

tr, tf

≤

10 ns

DUTY CYCLE = 1%

FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g.,

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

t

r

0

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3

Motorola Bipolar Power Transistor Device Data

P

D

, POWER DISSIPATION (WATTS)

0

80

60

40

20

4

3

2

1

TAT

C

0

Figure 3. Maximum Power Derating

T, TEMPERATURE (°C)

40 60 100 120 16080 140

T

C

20

t, TIME (ms)

0.01

0.1 0.5 10 20 50 100 200 500 5K 10K1 52

1

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

SINGLE PULSE R

θ

JC(t)

= r(t) R

θ

JC

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

RESISTANCE (NORMALIZED)

Figure 4. Thermal Response

0.5

0.3

0.03

0.02

0.2

1K 2K30 3003

0.3

3K

T

A

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum Forward Bias

Safe Operating Area

1

10

1

30

CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25

°

C (SINGLE PULSE)

I

C

, COLLECTOR CURRENT (AMPS)

0.1 2 3 50

3

0.3

10

0.2

dc

TJ = 150°C

1 ms

5 ms

100 µs

2

5

0.5

5 10020

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T

J(pk)

= 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided T

J(pk)

< 150_C. T

J(pk)

may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.

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4

Motorola Bipolar Power Transistor Device Data

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 6. Typical Small–Signal Current Gain

f, FREQUENCY (kHz)

70

300

h

fe

, SMALL–SIGNAL CURRENT GAIN

30

200

100

50

TC = 25°C VCE = 4 Vdc IC = 3 Adc

Figure 7. Typical Capacitance

10,000

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

C

ib

C

ob

0.1

200 100

1000

500 300

10

30

100510.5

2000

3000

5000

10 500.2 2 20

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

NPN

MJF122

PNP

MJF127

Figure 8. Typical DC Current Gain

0.1 IC, COLLECTOR CURRENT (AMP)

200

0.2 0.5

3000

1000

10,000

h

FE

, DC CURRENT GAIN

VCE = 4 V

TJ = 150°C

5000

0.3 1

25°C

–55°C

2000

0.7 3

20,000

300

500

5 10

h

FE

, DC CURRENT GAIN

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.3 0.5 0.7 102 5

IC = 2 A

4 A

1

6 A

TJ = 25°C

3

1

20 30

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

3

1

Figure 9. Typical Collector Saturation Region

PNP NPN

1 100050105 100 5002 20 200

20

50

200

3000

1000

10,000

5000

2000

20,000

300

500

2 7 0.1 0.2 0.50.3 10.7 3 5 102 7

VCE = 4 V

TJ = 150°C

25°C

–55°C

IC = 2 A

4 A

6 A

700

7000

3 7 0.3 0.5 0.7 102 51 20 303 7

TJ = 25°C

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5

Motorola Bipolar Power Transistor Device Data

V

, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

0.1

NPN

MJF122

PNP

MJF127

10

–1

0+0.4 –0.2 –0.4 –0.6+0.6 +0.2 –0.8 –1 –1.2 –1.4

IC, COLLECTOR CURRENT (AMP)

0

*IC/IB ≤ hFE

3

– 5

10

4

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10

–1

0– 0.4

, COLLECTOR CURRENT ( A)

µ

I

C

10

3

10

2

10

1

10

0

+0.2 +0.4 +0.6

TJ = 150°C

100°C

REVERSE

FORWARD

25°C

VCE = 30 V

10

5

–0.6 – 0.2 +0.8 +1 +1.2 +1.4

10

4

VBE, BASE–EMITTER VOLTAGE (VOLTS)

, COLLECTOR CURRENT ( A)

µ

I

C

10

3

10

2

10

1

10

0

TJ = 150°C

100°C

REVERSE FORWARD

25°C

VCE = 30 V

10

5

– 4

– 3

– 2

– 1

θ

VB

FOR V

BE

25°C to 150°C

*

θ

VC

FOR V

CE(sat)

IC, COLLECTOR CURRENT (AMP)

Figure 10. Typical “On” Voltages

Figure 11. Typical Temperature Coefficients

0.1 IC, COLLECTOR CURRENT (AMP)

2

1.5

V, VOLTAGE (VOLTS)

3

2.5

1

0.5

0.2 0.5 50.3 10.7 3 10 IC, COLLECTOR CURRENT (AMP)

2

1.5

V, VOLTAGE (VOLTS)

3

2.5

1

0.5

TJ = 25°C

V

BE(sat)

@ IC/IB = 250

VBE @ VCE = 4 V

TJ = 25°C

V

BE(sat)

@ IC/IB = 250

VBE @ VCE = 4 V

V

CE(sat)

@ IC/IB = 250

V

, TEMPERATURE COEFFICIENT (mV C)

°θ

72 0.1 0.2 0.5 50.3 10.7 3 1072

0.2 0.5 50.3 10.7 3 1072 0.1 0.2 0.5 50.3 1 3 1072

+ 1

+ 2

+ 3

+ 4

+ 5

0

– 5

– 4

– 3

– 2

– 1

+ 1

+ 2

+ 3

+ 4

+ 5

– 55°C to 25°C

*IC/IB ≤ hFE

3

θ

VB

FOR V

BE

*

θ

VC

FOR V

CE(sat)

Figure 12. Typical Collector Cut–Off Region

V

CE(sat)

@ IC/IB = 250

25°C to 150°C

– 55°C to 25°C

25°C to 150°C

– 55°C to 25°C

25°C to 150°C

– 55°C to 25°C

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6

Motorola Bipolar Power Transistor Device Data

BASE

EMITTER

COLLECTOR

≈

8 k≈ 120

BASE

EMITTER

COLLECTOR

≈

8 k≈ 120

NPN

MJF122

PNP

MJF127

Figure 13. Darlington Schematic

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.110” MIN

Figure 14. Clip Mounting Position

for Isolation Test Number 1

*Measurement made between leads and heatsink with all leads shorted together

CLIP

0.107” MIN LEADS

HEATSINK

0.107” MIN

Figure 15. Clip Mounting Position

for Isolation Test Number 2

Figure 16. Screw Mounting Position

for Isolation Test Number 3

MOUNTED

FULLY ISOLATED

PACKAGE

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

TEST CONDITIONS FOR ISOLATION TESTS*

4–40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in.lbs is sufficient to provide maximum power dissipation capability . The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.

Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in.lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.

Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in.lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in.lbs of mounting torque under any mounting conditions.

Figure 17. Typical Mounting Techniques*

MOUNTING INFORMATION

**For more information about mounting power semiconductors see Application Note AN1040.

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7

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221D–02

TO–220 TYPE

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 2:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

DIMAMIN MAX MIN MAX

MILLIMETERS

0.621 0.629 15.78 15.97

INCHES

B 0.394 0.402 10.01 10.21 C 0.181 0.189 4.60 4.80 D 0.026 0.034 0.67 0.86 F 0.121 0.129 3.08 3.27 G 0.100 BSC 2.54 BSC H 0.123 0.129 3.13 3.27 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.14 1.52 N 0.200 BSC 5.08 BSC Q 0.126 0.134 3.21 3.40 R 0.107 0.111 2.72 2.81 S 0.096 0.104 2.44 2.64 U 0.259 0.267 6.58 6.78

–B–

–Y–

G N

D

L

K

H

A

F

Q

3 PL

1 2 3

M

B

M

0.25 (0.010) Y

SEATING PLANE

–T–

U

C

S

J

R

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8

Motorola Bipolar Power Transistor Device Data

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Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

MJF122/D

*MJF122/D*

◊

Datasheet MJF122, MJF127 Datasheet (Motorola)

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