Datasheet mje521-d Datasheet

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MJE521
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Plastic Medium−Power NPN Silicon Transistor
These devices are designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry.
Features
• DC Current Gain − h
• Complementary to PNP MJE371
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter Base Voltage Collector Current − Continuous
ООООООООО
Base Current − Continuous Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction Temperature Range
ООООООООО
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
− Peak
Characteristic Symbol Max Unit
= 40 (Min) @ I
FE
= 1.0 Adc
C
V
CEO
V
CB
V
EB
I
C
ÎÎ
I
B
P
D
TJ, T
stg
ÎÎ
q
JC
40 40
4.0
4.0
8.0
ÎÎ
2.0 40
0.32
–65 to +150
ÎÎ
3.12
Vdc Vdc Vdc Adc
Î
Adc
W
mW/_C
_C
Î
_C/W
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4 AMPERES
POWER TRANSISTORS
NPN SILICON
40 VOLTS, 40 WATTS
TO−225
CASE 77
3
2
1
MARKING DIAGRAM
Y = Year WW = Work Week JE521 = Device Code G = Pb−Free Package
STYLE 1
YWW
JE521G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5
ORDERING INFORMATION
Device Package Shipping
MJE521 TO−225 500 Units/Box MJE521G
TO−225
(Pb−Free)
1 Publication Order Number:
500 Units/Box
MJE521/D
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MJE521
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ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
ОООООООООООООООООООО
Collector−Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
ОООООООООООООООООООО
Emitter−Base Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (Note 1)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
ОООООООООООООООООООО
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
V
CEO(sus)
ÎÎÎ
I
CBO
ÎÎÎ
I
EBO
h
FE
ÎÎÎ
Min
40
Î
−
Î
−
40
Î
Max
−
ÎÎ
100
ÎÎ
100
−
ÎÎ
Unit
Vdc
Î
mAdc
Î
mAdc
−
Î
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2
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MJE521
10
5.0
3.0
2.0
1.0
0.5
0.3
, COLLECTOR CURRENT (AMP)
C
I
0.2
0.1
TJ = 150°C
SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
5.0ms
dc
Figure 1. Active−Region Safe Operating Area
1000
700 500
300
200
100
, DC CURRENT GAIN
FE
h
70 50
30
20
10
3.0 5.0 20 20002.0
TJ = 150°C
25°C
−55 °C
10 50 10030
IC, COLLECTOR CURRENT (mA)
200 500 1000300
1.0ms
20105.02.0
VCE = 1.0 V
The data of Figure 1 based on T
= 150_C; TC is
J(pk)
variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided (T
Jpk
) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − V
CE
limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
30
403.0
1.5
1.2
0.9
0.6
VOLTAGE (VOLTS)
0.3
TJ = 25°C
V
@ IC/IB = 10
BE(sat)
VBE @ VCE = 2.0 V
V
@ IC/IB = 10
0
3.0 5.0 20 20002.0 10 50 10030 200 500 1000300
CE(sat)
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain Figure 3. “On” Voltage
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.1
0.07
0.05
r(t), TRANSIENT THERMAL
0.03
RESISTANCE (NORMALIZED)
0.02
0.01
0.2
0.1
0.05
0.01
SINGLE PULSE
0.01 0.03 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2
0.02 0.05 0.3 3.0 30 500 1000300
qJC(t) = r(t) q qJC = 5.0°C/W MAX
D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T
J(pk)
t, TIME (ms)
− TC = P
JC
1
(pk) qJC
Figure 4. Thermal Response
P
(pk)
t
1
t
(t)
2
DUTY CYCLE, D = t1/t
2
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MJE521
TO−225
PACKAGE DIMENSIONS
CASE 77−09
ISSUE Z
−B−
−A−
K
F
M
U
Q
132
H
V
G
S
D
2 PL
0.25 (0.010) B
M
0.25 (0.010) B
M
A
M
C
J
R
M
M
A
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09.
DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66 F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP
__
Q 0.148 0.158 3.76 4.01 R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 U 0.145 0.155 3.69 3.93 V 0.040 −−− 1.02 −−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MILLIMETERSINCHES
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MJE521/D
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