Datasheet MJE521 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

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 

. . . designed for use in general–purpose amplifier and switching circuits. Recom­mended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry
circuitry.

• DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc

• Complementary to PNP MJE371

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO

40

Vdc

Collector–Base Voltage

V

CB

40

Vdc

Emitter–Base Voltage

V

EB

4.0

Vdc

Collector Current — Continuous

— Peak

I

C

4.0

8.0

Adc

Base Current — Continuous

I

B

2.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

P

D

40

0.32

Watts
W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +150

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θ

JC

3.12

_

C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 100 mAdc, IB = 0)

V

CEO(sus)

40

—

Vdc

Collector–Base Cutoff Current

(VCB = 30 Vdc, IE = 0)

I

CBO

—

100

µAdc

Emitter–Base Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

I

EBO

—

100

µAdc

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

h

FE

40

—

—

(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE521/D

 Motorola, Inc. 1995



4 AMPERE

POWER TRANSISTOR

NPN SILICON

40 VOLTS

40 WATTS

CASE 77–08

TO–225AA TYPE

REV 1

MJE521

2

Motorola Bipolar Power Transistor Device Data

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.5

30

0.1

0.3

SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C

Figure 1. Active–Region Safe Operating Area

5.0 ms

dc

5.0

20105.02.0

TJ = 150°C

I

C

, COLLECTOR CURRENT (AMP)

1.0

2.0

3.0

0.2

403.0

1.0 ms

The data of Figure 1 based on T

J(pk)

= 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are v alid for duty cycles to 10% provided (T

Jpk

)

v

150_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

IC, COLLECTOR CURRENT (mA)

h

FE

, DC CURRENT GAIN

700

1000

3.0 5.0 20 20002.0

100

70
50

10

10 50 10030

25°C

TJ = 150°C

–55°C

Figure 2. DC Current Gain Figure 3. “On” Voltage

1.5

IC, COLLECTOR CURRENT (mA)

1.2

0.3

0

TJ = 25°C

VOLTAGE (VOLTS)

V

BE(sat)

@ IC/IB = 10

VBE @ VCE = 2.0 V

500

30
20

0.9

0.6

t, TIME (ms)

0.01

0.01 0.03 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

1.0

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

θ

JC

(t) = r(t)

θ

JC

θ

JC

= 5.0

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

0.2

SINGLE PULSE

RESISTANCE (NORMALIZED)

Figure 4. Thermal Response

0.5

D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

300
200

200 500 1000300

VCE = 1.0 V

V

CE(sat)

@ IC/IB = 10

3.0 5.0 20 20002.0 10 50 10030 200 500 1000300

0.02 0.05 0.3 3.0 30 500 1000300

0.1

0.01

MJE521

3

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A–

M

K

F

C

Q

H

V

G

S

D

J

R

U

1 32

2 PL

M

A

M

0.25 (0.010) B

M

M

A

M

0.25 (0.010) B

M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP
Q 0.148 0.158 3.76 4.01
R 0.045 0.055 1.15 1.39
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 ––– 1.02 –––

_ _

MJE521

4

Motorola Bipolar Power Transistor Device Data

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MJE521/D

*MJE521/D*

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