Datasheet mje371-d Datasheet

MJE371

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Plastic Medium−Power
PNP Silicon Transistor

This device is designed for use in general−purpose amplifier and
switching circuits. Recommended for use in 5 to 20 Watt audio
amplifiers utilizing complementary symmetry circuitry.

Features

• DC Current Gain − h

• MJE371 is Complementary to NPN MJE521

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous

ООООООООО

Base Current − Continuous
Total Power Dissipation @ TC = 25_C

Derate above 25_C

Operating and Storage Junction
Temperature Range

ООООООООО

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

− Peak

Characteristic Symbol Max Unit

= 40 (Min) @ I

FE

= 1.0 Adc

C

V

CEO

V

CB

V

EB

I

C

ÎÎ

I

B

P

D

TJ, T

stg

ÎÎ

q

JC

40
40

4.0

4.0

8.0

ÎÎ

2.0
40

320

–65 to +150

ÎÎ

3.12

Vdc
Vdc
Vdc
Adc

Î

Adc

W

mW/_C

_C

Î

_C/W

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4 AMPERES

POWER TRANSISTOR

PNP SILICON

40 VOLTS, 40 WATTS

TO−225

CASE 77

3

2

1

MARKING DIAGRAM

STYLE 1

YWW

JE371G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0) (Note 1)

ООООООООО

Collector−Base Cutoff Current
(VCB = 40 Vdc, IE = 0)

Emitter−Base Cutoff Current
(VEB = 4.0 Vdc, IC = 0)

ООООООООО

V

CEO(sus)

ÎÎ

I

CBO

I

EBO

ÎÎ

40

−

−

ON CHARACTERISTICS

DC Current Gain (Note 1)
(IC = 1.0 Adc, VCE = 1.0 Vdc)

h

FE

40

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 6

Y = Year
WW = Work Week
JE371 = Device Code
G = Pb−Free Package

−

Vdc

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100

100

−

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mAdc

mAdc

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−

ORDERING INFORMATION

Device Package Shipping

MJE371 TO−225 500 Units/Box
MJE371G

TO−225

(Pb−Free)

1 Publication Order Number:

500 Units/Box

MJE371/D

MJE371

10

5.0

3.0

2.0

1.0

0.5

0.3

, COLLECTOR CURRENT (AMP)

C

I

0.2

0.1

TJ = 150°C

BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

1.0ms

5.0ms

dc

20106.02.0

Figure 1. Active−Region Safe Operating Area

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

, DC CURRENT GAIN, NORMALIZED

0.2

FE

h

0.1

0.02 0.03 0.1 4.00.01

150°C

−55 °C

0.05 0.3 0.50.2
IC, COLLECTOR CURRENT (AMP)

TJ = 25°C

100ms

40

VCE = 1.0 Vdc

1.0 3.02.0

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 1 is based on T

= 150_C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T

J(pk)

v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.

604.0 8.0

2.0

1.6

1.2

0.8

VOLTAGE (VOLTS)

0.4

0

TJ = 25°C

V

@ IC/IB = 10

BE(sat)

V

@ IC/IB = 10

CE(sat)

0.01 0.02 0.05 4.00.005 0.03 0.2 0.30.1 0.5 2.0 3.01.0
IC, COLLECTOR CURRENT (AMP)

V

BE(on)

@ VCE = 1.0 V

Figure 2. DC Current Gain Figure 3. “On” Voltage

1.0

0.7
D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.07

0.02

0.05

0.03

r(t), EFFECTIVE TRANSIENT

0.02

THERMAL RESISTANCE (NORMALIZED)

0.01

0.01 0.03 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

0.02 0.05 0.3 3.0 500 1000

0.01

SINGLE PULSE

qJC(t) = r(t) q
qJC = 3.12°C/W MAX

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

t, TIME OR PULSE WIDTH (ms)

− TC = P

JC

1

(pk) qJC

Figure 4. Thermal Response

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2

P

(pk)

t

1

t

(t)

2

DUTY CYCLE, D = t1/t

2

MJE371

TO−225

PACKAGE DIMENSIONS

CASE 77−09

ISSUE Z

−B−

U

Q

132

H

F

−A−

K

M

V

G

S

D

2 PL

0.25 (0.010) B

M

0.25 (0.010) B

M

A

M

C

J

R

M

M

A

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.

DIM MIN MAX MIN MAX

A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66

F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP

__

Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

MILLIMETERSINCHES

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MJE371/D