Datasheet MJE 350G ONS Datasheet

MJE350

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Plastic Medium Power
PNP Silicon Transistor

This device is designed for use in line−operated applications such as
low power, line−operated series pass and switching regulators
requiring PNP capability.

Features

• High Collector−Emitter Sustaining Voltage −

V

CEO(sus)

• Excellent DC Current Gain −

• Plastic Thermopad Package

• Pb−Free Package is Available*

MAXIMUM RATINGS

Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Power Dissipation @ TC = 25_C

Derate above 25_C

Operating and Storage Junction
Temperature Range

ООООООООО

THERMAL CHARACTERISTICS

Thermal Resistance, Junction−to−Case

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

ELECTRICAL CHARACTERISTICS (T

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)

ООООООООО

Collector Cutoff Current
(VCB = 300 Vdc, IE = 0)

Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)

ООООООООО

ON CHARACTERISTICS

DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)

= 300 Vdc @ I

C

= 1.0 mAdc

hFE= 30−240 @ I

C

= 50 mAdc

Rating Symbol Value Unit

V

CEO

V

EB

I

C

P

D

TJ, T

stg

ÎÎ

Characteristic Symbol Max Unit

q

JC

= 25°C unless otherwise noted)

C

Characteristic Symbol Min Max Unit

V

CEO(sus)

ÎÎ

I

CBO

I

EBO

ÎÎ

h

FE

300

3.0

500

20

0.16

–65 to +150

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6.25

300

30

−

Î

−

100

−

100

Î

240

Vdc
Vdc

mAdc

W

mW/_C

_C

Î

_C/W

Vdc

Î

mAdc

mAdc

Î

−

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0.5 AMPERE

POWER TRANSISTOR

PNP SILICON

300 VOLTS, 20 WATTS

TO−225

CASE 77

3

2

1

MARKING DIAGRAM

Y = Year
WW = Work Week
J350 = Device Code
G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

MJE350 TO−225 500 Units/Box
MJE350G

TO−225

(Pb−Free)

STYLE 1

YWW

J350G

500 Units/Box

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2006

February, 2006 − Rev. 13

1 Publication Order Number:

MJE350/D

MJE350

, DC CURRENT GAIN

FE

h

1000

, COLLECTOR CURRENT (mA)

C

I

200

100

70

50

30

20

10

700
500

300

200

100

70
50

30

20

10

TJ = 150°C

25°C

−55 °C

VCE = 2.0 V
VCC = 10 V

7.0 205.0

10 50 10030

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

dc

1.0ms

TJ = 150°C

BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
SECOND BREAKDOWN LIMITED

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

100ms

1.0

TJ = 25°C

0.8
V

@ IC/IB = 10

BE(sat)

VBE @ VCE = 10 V0.6

0.4

V, VOLTAGE (VOLTS)

0.2

V

CE(sat)

200 50030070

0

7.0 205.0 10 50 10030 200 50030070

IC, COLLECTOR CURRENT (mA)

IC/IB = 10

IC/IB = 5.0

Figure 2. “On” Voltages

+1.2

+0.8

+0.4

−0.4

500ms

300

2001005020

40030 70

−0.8

−1.2

−1.6

−2.0

−2.4

, TEMPERATURE COEFFICIENTS (mV/C)°θ

V

−2.8

*APPLIES FOR IC/IB < h

0

*qVC for V

qVB for V

FE/4

CE(sat)

BE

5030105.0 5007.0 20

IC, COLLECTOR CURRENT (mA)

+100 °C to +150°C

+25 °C to +100°C

−55 °C to +25°C

+25 °C to +150°C

−55 °C to +25°C

70

100 200 300

Figure 3. Active−Region Safe Operating Area

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 3 is based on T

= 150_C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T

J(pk)

v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.

20

16

12

8.0

4.0

, POWER DISSIPATION (WATTS)

D

P

Figure 4. Temperature Coefficients

0

TC, CASE TEMPERATURE (°C)

10080400 16020 60

120 140

Figure 5. Power Derating

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2

MJE350

TO−225

PACKAGE DIMENSIONS

CASE 77−09

ISSUE Z

−B−

−A−

K

F

M

U

Q

132

H

V

G

S

D

2 PL

0.25 (0.010) B

M

0.25 (0.010) B

M

A

M

C

J

R

M

M

A

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.

DIM MIN MAX MIN MAX

A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30

G 0.094 BSC 2.39 BSC

H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63

M 5 TYP 5 TYP

__

Q 0.148 0.158 3.76 4.01

R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

MILLIMETERSINCHES

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MJE350/D