
MJE344
Plastic NPN Silicon
Medium−Power Transistor
This device is useful for medium voltage applications requiring high
fT such as converters and extended range amplifiers.
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
ООООООООО
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
V
CEO
V
CB
V
EB
I
C
I
B
P
D
TJ, T
stg
ÎÎ
q
JC
200
200
5.0
500
250
20
0.16
–65 to +150
ÎÎ
6.25
Vdc
Vdc
Vdc
mAdc
mAdc
W
mW/_C
_C
Î
_C/W
http://onsemi.com
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
150−200 VOLTS, 20 WATTS
TO−225
CASE 77
3
2
1
MARKING DIAGRAM
STYLE 1
YWW
JE344G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
Y = Year
WW = Work Week
JE344 = Device Code
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
MJE344 TO−225 500 Units/Box
MJE344G
TO−225
(Pb−Free)
1 Publication Order Number:
500 Units/Box
MJE344/D

MJE344
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0)
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
Collector Cutoff Current (VCB = 200 Vdc, IE = 0)
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
Collector−Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter On Voltage (IC = 50 mAdc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 10 MHz)
Output Capacitance (VCB = 20 Vdc, IE = 0, f = 100 kHz)
Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
1.0
0.5
TJ = 150°C
0.2
= 25_C unless otherwise noted)
C
500ms
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V
ALL
1.0ms
ALL
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
There are two limitations on the power handling ability of
dissipation then the curves indicate.
0.1
0.05
, COLLECTOR CURRENT (AMP)
C
I
0.02
dc
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT TC = 25°C
The data of Figure 1 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less then
the limitations imposed by second breakdown.
0.01
10
Figure 1. Active Region Safe Operating Area
20 40 60 100 300
30 200
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Symbol
V
CEO(sus)
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
C
ob
h
fe
Min
200
−
−
−
30
−
−
15
−
25
Max
−
1.0
0.1
0.1
300
1.0
1.0
−
15
−
= 150_C; TC is
J(pk)
Unit
Vdc
mAdc
mAdc
mAdc
−
Vdc
Vdc
MHz
pF
−
CE
J(pk)
, CURRENT GAIN
FE
h
300
200
100
VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
V
@ IC/IB = 10
BE(sat)
VBE @ VCE = 10 V
V
@ IC/IB = 10
CE(sat)
TJ = +25°C
IC/IB = 5.0
0
10
50
IC, COLLECTOR CURRENT (mA)
100 300 500
Figure 3. “On” Voltages
VCE = 2.0 V
VCE = 10 V
TJ = +150°C
70
50
30
20
10
+100°C
+25 °C
−55 °C
2.0
5.0 70 300 500
3.0 7.0 501.0 100 20 30 200
IC, COLLECTOR CURRENT (mA)
20 200
10
Figure 2. DC Current Gain
http://onsemi.com
2

MJE344
PACKAGE DIMENSIONS
CASE 77−09
ISSUE Z
−B−
−A−
K
F
M
U
Q
132
H
V
G
S
D
2 PL
0.25 (0.010) B
M
0.25 (0.010) B
M
A
M
C
J
R
M
M
A
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP
__
Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MILLIMETERSINCHES
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone
: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax
: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email
: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
3
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
MJE344/D