Datasheet mje344-d Datasheet

Page 1
MJE344
Î
Î
Î
Î
Plastic NPN Silicon Medium−Power Transistor
This device is useful for medium voltage applications requiring high
fT such as converters and extended range amplifiers.
Features
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction Temperature Range
ООООООООО
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
V
CEO
V
CB
V
EB
I
C
I
B
P
D
TJ, T
stg
ÎÎ
q
JC
200 200
5.0 500 250
20
0.16
–65 to +150
ÎÎ
6.25
Vdc Vdc
Vdc mAdc mAdc
W
mW/_C
_C
Î
_C/W
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0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
150−200 VOLTS, 20 WATTS
TO−225
CASE 77
3
2
1
MARKING DIAGRAM
STYLE 1
YWW
JE344G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
Y = Year WW = Work Week JE344 = Device Code G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
MJE344 TO−225 500 Units/Box MJE344G
TO−225
(Pb−Free)
1 Publication Order Number:
500 Units/Box
MJE344/D
Page 2
MJE344
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) Collector−Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) Base−Emitter On Voltage (IC = 50 mAdc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 10 MHz) Output Capacitance (VCB = 20 Vdc, IE = 0, f = 100 kHz) Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
1.0
0.5
TJ = 150°C
0.2
= 25_C unless otherwise noted)
C
500ms
a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − V
ALL
1.0ms
ALL
limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater
There are two limitations on the power handling ability of
dissipation then the curves indicate.
0.1
0.05
, COLLECTOR CURRENT (AMP) C
I
0.02
dc
SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C
The data of Figure 1 is based on T variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less then the limitations imposed by second breakdown.
0.01 10
Figure 1. Active Region Safe Operating Area
20 40 60 100 300
30 200
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Symbol
V
CEO(sus)
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
C
ob
h
fe
Min
200
−
−
−
30
−
−
15
−
25
Max
−
1.0
0.1
0.1
300
1.0
1.0
−
15
−
= 150_C; TC is
J(pk)
Unit
Vdc mAdc mAdc mAdc
− Vdc Vdc
MHz
pF
−
CE
J(pk)
, CURRENT GAIN
FE
h
300
200
100
VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
V
@ IC/IB = 10
BE(sat)
VBE @ VCE = 10 V
V
@ IC/IB = 10
CE(sat)
TJ = +25°C
IC/IB = 5.0
0
10
50
IC, COLLECTOR CURRENT (mA)
100 300 500
Figure 3. “On” Voltages
VCE = 2.0 V VCE = 10 V
TJ = +150°C
70
50
30
20
10
+100°C
+25 °C
−55 °C
2.0
5.0 70 300 500
3.0 7.0 501.0 100 20 30 200 IC, COLLECTOR CURRENT (mA)
20 200
10
Figure 2. DC Current Gain
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2
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MJE344
TO−225
PACKAGE DIMENSIONS
CASE 77−09
ISSUE Z
−B−
−A−
K
F
M
U
Q
132
H
V
G
S
D
2 PL
0.25 (0.010) B
M
0.25 (0.010) B
M
A
M
C
J
R
M
M
A
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09.
DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66 F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP 5 TYP
__
Q 0.148 0.158 3.76 4.01 R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 U 0.145 0.155 3.69 3.93 V 0.040 −−− 1.02 −−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MILLIMETERSINCHES
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MJE344/D
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