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■ SGS-THOMSONPREFERRED SALESTYPE
■ NPNTRANSISTOR
DESCRIPTION
The MJE3440 is a NPN silicon epitaxial planar
transistors in SOT-32 plastic package. It is
designed for use in consumer and industrial
line-operatedapplications.
MJE3440
SILICON NPN TRANSISTOR
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parame t er Val u e Uni t
V
V
V
P
T
Collector-Base Voltage (IE=0)
CBO
Collector-Emitter Voltage (IB=0)
CEO
Emitter-Base Voltage (IC=0)
EBO
I
Collect or Current
C
I
Base Current
B
Total Power Dissipation at Tcase ≤ 25 oC
tot
stg Stora ge Tem perat ure
T
Max. Operati ng Junction Tem perat u r e
j
350 V
250 V
5V
0.3 A
0.15 A
15 W
-65 to +1 50
150
o
C
o
C
June 1997
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MJE3440
THERMAL DATA
R
thj-case
Ther mal Res is t ance J u nct ion-cas e Max
8.33
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CBO
I
CEV
I
CEO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE
h
FE
h
f
C
CBO
∗
Pulsed: Pulse duration = 300µs, dutycycle ≤ 1.5 %
Collector Cut- of f
Current (I
E
Collector Cut- of f
Current (V
BE
Collector Cut- of f
Current (I
B
Emit ter Cut- o f f Current
=0)
(I
C
Collector-Emitter
∗
Saturation Volta ge
Base-Emitt er
∗
Saturation Volta ge
∗
Base-Emitt er V oltage I
∗
DC C urr ent G ain
Small Signal Current
fe
Gain
Tr ansistor Frequenc y
T
Collector-Base
∗
Capacit a nc e
=0)
= -1. 5V )
=0)
V
=250V
CB
=300V
V
CE
V
=200V
CE
V
=5V
EB
=50mA IB=4mA
I
C
=50mA IB=4mA
I
C
=50mA VCE=10V
C
=2mA VCE=10V
I
C
=20mA VCE=10V
I
C
IC=5mA VCE=10V
f=1KHz
=10mA VCE=10V
I
C
f=5MHz
=10V IE=0
V
CB
f=1MHz
20
500 µA
50 µA
20 µA
0.5 V
0.3 V
0.8 V
30
50 200
25
15 M Hz
10 pF
µA
Safe Operating Area DeratingCurve
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MJE3440
DCCurrent Gain
Base-emitterVoltage
Collector-emitter Saturation Voltage
TransitionFrequency
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MJE3440
SOT-32 (TO-126)MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
mm inch
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H2
0016114
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MJE3440
Informationfurnished isbelieved to be accurate and reliable. However, SGS-THOMSON Microelectronics assumesno responsability for the
consequencesof use of such informationnor forany infringementof patentsor other rights ofthird partieswhich may results from its use.No
license is grantedby implicationorotherwise underanypatentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublicationare subject tochange without notice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents in life supportdevicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997SGS-THOMSONMicroelectronics -Printed in Italy- All RightsReserved
Australia- Brazil - Canada- China- France - Germany- Hong Kong- Italy- Japan- Korea -Malaysia -Malta - Morocco- TheNetherlands -
Singapore - Spain- Sweden - Switzerland- Taiwan -Thailand- UnitedKingdom- U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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