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MJE3439
Î
Î
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NPN Silicon High−Voltage
Power Transistor
This device is designed for use in line−operated equipment
requiring high fT.
Features
• High DC Current Gain − h
= 40−160 @ I
FE
C
= 20 mAdc
• Current Gain Bandwidth Product − f
= 15 MHz (Min) @ I
T
C
= 10 mAdc
• Low Output Capacitance − C
= 10 pF (Max) @ f
ob
= 1.0 MHz
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Operating and Storage Junction
ООООООООО
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
V
CEO
V
CB
V
EB
I
C
I
B
P
D
TJ, T
stg
ÎÎ
q
JC
350
450
5.0
0.3
150
15
0.12
–65 to +150
ÎÎ
8.33
Vdc
Vdc
Vdc
Adc
mAdc
W
mW/_C
_C
Î
_C/W
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0.3 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS, 15 WATTS
TO−225
CASE 77
3
2
1
MARKING DIAGRAM
Y = Year
WW = Work Week
E3439 = Device Code
G = Pb−Free Package
STYLE 1
YWW
E3439G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
ORDERING INFORMATION
Device Package Shipping
MJE3439 TO−225 500 Units/Box
MJE3439G
1 Publication Order Number:
TO−225
(Pb−Free)
500 Units/Box
MJE3439/D
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MJE3439
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ELECTRICAL CHARACTERISTICS (T
= 25_C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 5.0 mAdc, IB = 0)
Collector Cutoff Current
ООООООООООООООООООО
(VCE = 300 Vdc, IB = 0)
Collector Cutoff Current
(VCE = 450 Vdc, V
ООООООООООООООООООО
EB(off)
= 1.5 Vdc)
Collector Cutoff Current
(VCB = 350 Vdc, IE = 0)
Emitter Cutoff Current
ООООООООООООООООООО
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc)
ООООООООООООООООООО
(IC = 20 mAdc, VCE = 10 Vdc)
ООООООООООООООООООО
Collector−Emitter Saturation Voltage
(IC = 50 mAdc, IB = 4.0 mAdc)
Base−Emitter Saturation Voltage
ООООООООООООООООООО
(IC = 50 mAdc, IB = 4.0 mAdc)
Base−Emitter On Voltage
(IC = 50 mAdc, VCE = 10 Vdc)
ООООООООООООООООООО
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz)
Output Capacitance
ООООООООООООООООООО
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
ООООООООООООООООООО
Symbol
V
CEO(sus)
I
CEO
ÎÎÎ
I
CEX
ÎÎÎ
I
CBO
I
EBO
ÎÎÎ
h
FE
ÎÎÎ
ÎÎÎ
V
CE(sat)
V
BE(sat)
ÎÎÎ
V
BE(on)
ÎÎÎ
f
T
C
ob
ÎÎÎ
h
fe
ÎÎÎ
Min
350
−
ÎÎ
−
ÎÎ
−
−
ÎÎ
ÎÎ
30
15
ÎÎ
−
−
ÎÎ
−
ÎÎ
15
−
ÎÎ
25
ÎÎ
Max
−
20
Î
500
Î
20
20
Î
Î
−
200
Î
0.5
1.3
Î
0.8
Î
−
10
Î
−
Î
Unit
Vdc
mAdc
ÎÎ
mAdc
ÎÎ
mAdc
mAdc
ÎÎ
−
ÎÎ
ÎÎ
Vdc
Vdc
ÎÎ
Vdc
ÎÎ
MHz
pF
ÎÎ
−
ÎÎ
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2
Page 3
MJE3439
16
14
12
10
8.0
6.0
4.0
, POWER DISSIPATION (WATTS)
D
P
2.0
0
0 40 80 120 160
20 60 100 140
TC, CASE TEMPERATURE (°C)
Figure 1. Power−Temperature Derating Curve
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.007
, COLLECTOR CURRENT (AMP)
C
I
0.005
0.003
0.002
0.001
1.0
5.0 10
2.0 20 50 1000
3.0 7.0 30 70 300
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
MJE3439
100 200 500
Figure 2. Active−Region Safe Operating Area
The Safe Operating Area Curves indicate I
C
− V
limits below which the device will not enter secondary breakdown.
CE
Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To
insure operation below the maximum TJ, power−temperature derating must be observed for both steady state and pulse power
conditions.
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3
Page 4
MJE3439
TO−225
PACKAGE DIMENSIONS
CASE 77−09
ISSUE Z
−B−
−A−
K
F
M
U
Q
132
H
V
G
S
D
2 PL
0.25 (0.010) B
M
0.25 (0.010) B
M
A
M
C
J
R
M
M
A
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
DIM MIN MAX MIN MAX
A 0.425 0.435 10.80 11.04
B 0.295 0.305 7.50 7.74
C 0.095 0.105 2.42 2.66
D 0.020 0.026 0.51 0.66
F 0.115 0.130 2.93 3.30
G 0.094 BSC 2.39 BSC
H 0.050 0.095 1.27 2.41
J 0.015 0.025 0.39 0.63
K 0.575 0.655 14.61 16.63
M 5 TYP 5 TYP
__
Q 0.148 0.158 3.76 4.01
R 0.045 0.065 1.15 1.65
S 0.025 0.035 0.64 0.88
U 0.145 0.155 3.69 3.93
V 0.040 −−− 1.02 −−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
MILLIMETERSINCHES
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MJE3439/D
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