Datasheet MJE 340G ONS Datasheet

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Page 1

MJE340

Plastic Medium−Power NPN Silicon Transistor

This device is useful for high−voltage general purpose applications.

Features

• Suitable for Transformerless, Line−Operated Equipment

• Thermopad Construction Provides High Power Dissipation Rating

for High Reliability

• Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TC = 25_C

ООООООООО

Derate above 25_C

Operating and Storage Junction Temperature Range

ООООООООО

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0)

Collector Cutoff Current

ООООООООО

(VCB = 300 Vdc, IE = 0) Emitter Cutoff Current

(VEB = 3.0 Vdc, IC = 0)

ON CHARACTERISTICS

DC Current Gain

ООООООООО

(IC = 50 mAdc, VCE = 10 Vdc)

CEO

ÎÎ

TJ, T

stg

ÎÎ

= 25°C unless otherwise noted)

CEO(sus)

CBO

ÎÎ

EBO

ÎÎ

300

3.0

500

ÎÎ

0.16

–65 to +150

ÎÎ

6.25

300

−

100

−

100

240

mAdc

mW/_C

_C/W

mAdc

Vdc Vdc

Vdc

−

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0.5 AMPERE

POWER TRANSISTOR

NPN SILICON

300 VOLTS, 20 WATTS

TO−225

CASE 77

MARKING DIAGRAM

Y = Year WW = Work Week JE340 = Device Code G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

MJE340 TO−225 500 Units/Box MJE340G

TO−225

(Pb−Free)

STYLE 1

YWW

JE340G

500 Units/Box

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

February, 2006 − Rev. 11

1 Publication Order Number:

MJE340/D

Page 2

MJE340

COLLECTOR

CURRENT

(AMP)

ACTIVE−REGION SAFE OPERATING AREA

, POWER DISSIPATION (WATTS) P

1.0

0.5

0.3

0.2

0.1

0.05

0.03

0.02

0.01

8.0

4.0

MJE340

20 40 80 120 160

60 100 140

TC, CASE TEMPERATURE (°C)

Figure 1. Power Temperature Derating

V, VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

TJ = 25°C

@ IC/IB = 10

CE(sat)

IC/IB = 5.0

20 30 50 100 200 500

IC, COLLECTOR CURRENT (mA)

@ IC/IB = 10

BE(sat)

VBE @ VCE = 10 V

300

Figure 2. “On” Voltages

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

10 ms

breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable

− V

operation; i.e., the transistor must not be subjected to greater

TJ = 150°C

500 ms

1.0ms

dissipation than the curves indicate.The data of Figure 3 is based on T

= 150_C; TC is variable depending on

J(pk)

conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T

v 150_C. At high case

J(pk)

temperatures, thermal limitations will reduce the power that

SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C SINGLE PULSE

20 30

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

50 100

200 300

Figure 3. MJE340

can be handled to values less than the limitations imposed by second breakdown.

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Page 3

MJE340

7.0

5.0

150°C

3.0

2.0

−55 °C

1.0

0.7

0.5

0.3

, DC CURRENT GAIN, NORMALIZED

0.2

0.1

0.02 0.03 0.1 4.00.01

0.05 0.3 0.50.2 IC, COLLECTOR CURRENT (AMP)

Figure 4. DC Current Gain Figure 5. “On” Voltage

1.0

0.7 D = 0.5

0.5

0.3

0.2

0.1

0.05

0.07

0.02

0.05

0.03

r(t), EFFECTIVE TRANSIENT

0.02

THERMAL RESISTANCE (NORMALIZED)

0.01

0.01 0.03 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

0.02 0.05 0.3 3.0 500 1000

0.01

SINGLE PULSE

TJ = 25°C

VCE = 1.0 Vdc

1.0 3.02.0

t, TIME OR PULSE WIDTH (ms)

2.0

1.6

TJ = 25°C

1.2

0.8

VOLTAGE (VOLTS)

BE(sat)

@ IC/IB = 10

0.4

0.01 0.02 0.05 4.00.005 0.03 0.2 0.30.1 0.5 2.0 3.01.0 IC, COLLECTOR CURRENT (AMP)

qJC(t) = r(t) q

qJC = 3.12°C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

− TC = P

J(pk)

(pk) qJC

(t)

CE(sat)

BE(on)

@ IC/IB = 10

(pk)

DUTY CYCLE, D = t1/t

@ VCE = 1.0 V

Figure 6. Thermal Response

300

200

VCE = 10 V VCE = 2.0 V

100

, DC CURRENT GAIN

TJ = 150°C

+100°C

+25 °C

1.0 2.0 3.0 5.0 10 20 30 500

−55 °C

7.0 50 70 100 200 300 IC, COLLECTOR CURRENT (mAdc)

Figure 7. DC Current Gain

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Page 4

MJE340

TO−225

PACKAGE DIMENSIONS

CASE 77−09

ISSUE Z

−B−

−A−

132

2 PL

0.25 (0.010) B

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09.

DIM MIN MAX MIN MAX

A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66

F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41

J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP 5 TYP

Q 0.148 0.158 3.76 4.01 R 0.045 0.065 1.15 1.65

S 0.025 0.035 0.64 0.88 U 0.145 0.155 3.69 3.93

V 0.040 −−− 1.02 −−−

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

MILLIMETERSINCHES

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MJE340/D

Datasheet MJE 340G ONS Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual