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COMPLEMETARY SILICON POWER TRANSISTORS
■ SGS-THOMSON PREFERRED SALESTYPES
■ COMPLEMENTARYPNP - NPNDEVICES
APPLICATIONS
■ LINEARANDSWITCHINGINDUSTRIAL
EQUIPMENT
DESCRIPTION
The MJE340 is a silicon epitaxial planar NPN
transistor intended for use in medium power
linear and switching applications.It is mounted in
SOT-32.
The complementaryPNP type is MJE350.
SOT-32
MJE340
MJE350
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val ue Uni t
NPN MJE340 Unit
PNP MJE35 0 Unit
V
V
P
T
For PNP typesvoltage and current values are negative.
Collect or- E m it ter V o lt age ( IB= 0 ) 300 V
CEO
Emitt er-Base Voltage (IC = 0) 3 V
EBO
I
Collect or Current 0.5 A
C
Tot al Power Dissip at ion at T
tot
Stora ge Temperatur e -65 to 150
stg
T
Max Operating Junction T em pera t ur e 150
j
≤ 25oC 20.8 W
case
o
C
o
C
June 1997
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MJE340/ MJE350
THERMAL DATA
R
thj-case
Ther mal Resis tance Junction-case Max 6.0
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Paramet er Test Condition s Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus )
Collector Cut-off
Current (I
E
=0)
Emit ter Cut-o f f Current
=0)
(I
C
∗ Collector-Emit t er
V
=300V 100 µA
CB
V
=3V 100 µA
EB
I
= 1 mA 300 V
C
Sust aining V olt age
=0)
(I
B
h
∗
Pulsed: Pulse duration =300µs, dutycycle ≤ 2%
DC Current G ain IC=50mA VCE=10V 30 240
FE
Safe OperatingArea DeratingCurve
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MJE340 / MJE350
DCCurrent Gain (NPN type)
CollectorEmitter SaturationVoltage (NPN type)
DC Current Gain (PNPtype)
Collector EmitterSaturation Voltage(PNP type)
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MJE340/ MJE350
SOT-32 (TO-126) MECHANICALDATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
mm inch
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H2
0016114
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MJE340 / MJE350
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rightsof third parties which may results from its use. No
license is grantedby implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorized for use as criticalcomponentsin life support devices orsystems without express
written approval of SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy -All Rights Reserved
Australia - Brazil - Canada - China- France- Germany- Hong Kong -Italy - Japan - Korea -Malaysia -Malta - Morocco- TheNetherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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