MJE2955T
General Purpose and Switching Applications
• DC Current Gain Specified to IC = 10 A
• High Current Gain Bandwidth Product : f
= 2MHz (Min.)
T
MJE2955T
1
TO-220
1.Base 2.Collector 3.Emitter
PNP Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
IB
P
PC
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage - 70 V
Collector-Emitter Voltage - 60 V
Emitter-Base Voltage - 5 V
Collector Current - 10 A
Base Current - 6 A
Collector Dissipation (TC=25°C) 75 W
Collector Dissipation (Ta=25°C) 0.6 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CEO
I
CEX1
I
CEX2
I
EBO
h
FE
V
(sat) * Collector-Emitter Saturation Voltage IC = - 4A, IB = - 0.4A
CE
(on) * Base-Emitter ON Voltage V
V
BE
f
T
* Pulse test: PW≤300µs, duty cycle≤2% Pulse
Collector- Emitter Breakdown Voltage IC= - 200mA, IB = 0 -60 V
Collector Cut-off Current V
Collector Cut-off Current V
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain
Current Gain Bandwidth Product V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 30V, IB = 0 -700 µA
CE
= - 70V, VBE(off) = 1.5V -1 mA
CE
= - 70V, VBE(off) = 1.5V
CE
@ T
= 150°C
C
= - 5V, IC = 0 -5 mA
EB
V
= - 4V, IC = - 4A
CE
= - 4V, IC = - 10A
V
CE
= - 10A, IB = - 3.3A
I
C
= - 4V, IC = - 4A -1.8 V
CE
= - 10V, IC = - 500mA 2 MHz
CE
-5 mA
20 5100
-1.1
-8
V
V
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
Typical Characteristic
MJE2955T
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
-100
-10
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1ms
5ms
DC
VCE = -2V
100
µ
-10
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100
VCE(sat)
IC = 10I
B
IC[A], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
105
90
75
s
60
45
30
[W], POWER DISSIPATION
C
P
15
0
0 255075100125150175
TC[oC], CASE TEMPERATURE
Figure 3. Safe Operating Area Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
MJE2955T
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
2.54TYP
[2.54
±0.10
±0.20
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
2
E
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN
™
POP™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
LILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
®
SyncFET™
TinyLogic™
VCX™
UHC™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. G
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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