Datasheet MJE243G Specification

MJE243 - NPN, MJE253 - PNP

Complementary Silicon Power Plastic Transistors

These devices are designed for low power audio amplifier and

low−current, high−speed switching applications.

Features

• High Collector−Emitter Sustaining Voltage −

V

CEO(sus)

• High DC Current Gain @ I

h

FE

• Low Collector−Emitter Saturation Voltage −

V

CE(sat)

• High Current Gain Bandwidth Product −

f

T

• Annular Construction for Low Leakages

I

CBO

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous

Base Current I

Total Power Dissipation @ TC = 25_C

Derate above 25_C

Total Power Dissipation @ TA = 25_C

Derate above 25_C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

Thermal Resistance,

Junction−to−Ambient

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

= 100 Vdc (Min)

= 200 mAdc

C

= 40−200 = 40−120

= 0.3 Vdc (Max) @ IC = 500 mAdc

= 40 MHz (Min) @ IC = 100 mAdc

= 100 nAdc (Max) @ Rated V

Rating Symbol Value Unit

− Peak

TJ, T

CEO

I

P

q

CB

EB

C

B

D

stg

JC

JA

CB

100 Vdc

7.0 Vdc

4.0

8.0

10 Adc

15

120

1.5 12

–65 to + 150

8.34

83.4

mW/_C

_C/W

Adc

W

_C

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4.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

100 VOLTS, 15 WATTS

TO−225

CASE 77

3

2

1

MARKING DIAGRAM

Y = Year WW = Work Week JE2x3 = Device Code

G=Pb−Free Package

x = 4 or 5

ORDERING INFORMATION

Device Package Shipping

MJE243 TO−225 500 Units/Box

MJE243G

MJE253 TO−225 500 Units/Box

MJE253G

TO−225

(Pb−Free)

TO−225

(Pb−Free)

STYLE 1

YWW

JE2x3G

500 Units/Box

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

April, 2009 − Rev. 13

1 Publication Order Number:

Preferred devices are recommended choices for future use

and best overall value.

MJE243/D

MJE243 − NPN, MJE253 − PNP

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 10 mAdc, IB = 0)

Collector Cutoff Current

(V

= 100 Vdc, IE = 0)

CB

(V

= 100 Vdc, IE = 0, TC = 125_C)

CE

Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) I

ON CHARACTERISTICS

DC Current Gain

(I

= 200 mAdc, VCE = 1.0 Vdc)

C

= 1.0 Adc, VCE = 1.0 Vdc)

(I

C

Collector−Emitter Saturation Voltage

= 500 mAdc, IB = 50 mAdc)

(I

C

= 1.0 Adc, IB = 100 mAdc)

(I

C

Base−Emitter Saturation Voltage

(I

= 2.0 Adc, IB = 200 mAdc)

C

Base−Emitter On Voltage

(I

= 500 mAdc, VCE = 1.0 Vdc)

C

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 100 mAdc, VCE = 10 Vdc, f

= 10 MHz)

test

Output Capacitance

(V

= 10 Vdc, IE = 0, f = 0.1 MHz)

CB

Symbol Min Max Unit

V

CEO(sus)

I

CBO

EBO

h

V

CE(sat)

V

BE(sat)

V

BE(on)

C

FE

f

T

ob

100 − V

−

− 0.1

40 15

−

0.1

mAdc

180

−

0.3

0.6

− 1.8 V

− 1.5 V

40 − MHz

− 50 pF

mA

−

V

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2

MJE243 − NPN, MJE253 − PNP

25 ms

+11 V

0

-9.0 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

R

B

D

MUST BE FAST RECOVERY TYPE, e.g.:

1

1N5825 USED ABOVE I MSD6100 USED BELOW I FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES

Figure 2. Switching Time Test Circuit

16

12

C

8.0 0.8

T

4.0

, POWER DISSIPATION (WATTS)

D

P

0

20

40 60 100 120 160

80 140

T, TEMPERATURE (°C)

Figure 1. Power Derating

V

CC

+30 V

R

C

R

B

D

51

1

SCOPE

-4 V

≈ 100 mA

B

≈ 100 mA

B

1K

500 300

200

100

50 30

20

t, TIME (ns)

10

5

NPN MJE243

3

PNP MJE253

2

1

0.02

0.01 0.03 0.05 0.50.20.1 0.3 10

1.6

P

D

, POWER DISSIPATION (WATTS)

1.2

T

A

0.4

0

t

r

t

d

I

, COLLECTOR CURRENT (AMPS)

C

Figure 3. Turn−On Time

VCC = 30 V I

= 10

C/IB

= 25°C

T

J

5213

1.0

0.7

0.5

0.3

0.2

0.1

D = 0.5

0.2

0.1

0.05

0.07

(NORMALIZED)

0.05

0.01

0.03 0 (SINGLE PULSE)

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.01

0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2

0.02

qJC(t) = r(t) q

JC

qJC = 8.34°C/W MAX

D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

- TC = P

J(pk)

1

(pk) qJC

t, TIME (ms)

Figure 4. Thermal Response

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3

P

(pk)

t

1

t

(t)

2

DUTY CYCLE, D = t1/t

2

MJE243 − NPN, MJE253 − PNP

10

5.0

2.0

1.0

0.5

0.2

0.1

0.05

, COLLECTOR CURRENT (AMP)

C

I

0.02

0.01

1.0ms

TJ = 150°C

BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED V

V

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

dc

CEO

MJE243/MJE253

20107.05.03.02.01.0

Figure 5. Active Region Safe Operating Area

10K

5K 3K

2K

1K

500 300

200

t, TIME (ns)

100

50 30

20

10

0.01 0.03 0.05 0.50.2

0.02 I

, COLLECTOR CURRENT (AMPS)

C

t

f

0.1 0.3 105213

t

s

NPN MJE243 PNP MJE253

Figure 6. Turn−Off Time

100ms

30

500ms

5.0ms

VCC = 30 V I

C/IB

I

B1

TJ = 25°C

= I

= 10

B2

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I

C

− V

CE

limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on T

= 150_C; TC is

J(pk)

variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T v 150_C. T

may be calculated from the data in

J(pk)

Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the

1007050

limitations imposed by second breakdown.

200

100

70

50

30

C, CAPACITANCE (pF)

20

10

MJE243 (NPN) MJE253 (PNP)

2.0 VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

C

ib

C

ob

TJ = 25°C

5020107.05.03.01.0

7030

100

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4

MJE243 − NPN, MJE253 − PNP

, DC CURRENT GAIN

FE

h

500

300 200

100

70 50

30 20

10

7.0

5.0

1.4

1.2

NPN MJE243

TJ = 150°C

0.06 0.1 0.4 4.00.04

TJ = 25°C

25°C

-55°C

0.2

VCE = 1.0 V V

= 2.0 V

CE

1.0 2.00.6

Figure 8. DC Current Gain

200

100

, DC CURRENT GAIN

FE

7.0

h

5.0

3.0

2.0

1.4

1.2

PNP MJE253

TJ = 150°C

70 50

30 20

10

25°C

-55°C

0.06 0.1 0.4 4.00.04 0.2 1.0 2.00.6

, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

I

C

TJ = 25°C

VCE = 1.0 V V

= 2.0 V

CE

1.0

V

@ IC/IB = 10

BE(sat)

VBE @ VCE = 1.0 V

V, VOLTAGE (VOLTS)

0.8

0.6

0.4

0.2 V

CE(sat)

0

0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6

, COLLECTOR CURRENT (AMP)

I

C

+2.5

+2.0

*APPLIES FOR IC/IB ≤ h

+1.5

+1.0

+0.5

*qVC FOR V

CE(sat)

0

-0.5

-1.0

-1.5

-2.0

-2.5

qVB FOR V

0.04

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

V

BE

0.06 0.1 0.4 4.00.2 1.0 2.00.6 I

, COLLECTOR CURRENT (AMP)

C

FE/3

25°C to 150°C

IC/IB = 10

5.0

Figure 9. “On” Voltages

25°C to 150°C

-55°C to 25°C

-55°C to 25°C , TEMPERATURE COEFFICIENTS (mV/ C)°θ

Figure 10. Temperature Coefficients

1.0 V

@ IC/IB = 10

BE(sat)

VBE @ VCE = 1.0 V

V

CE(sat)

0

0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6

V, VOLTAGE (VOLTS)

0.8

0.6

0.4

0.2

IC, COLLECTOR CURRENT (AMP)

+2.5

+2.0

*APPLIES FOR IC/IB ≤ h

FE/3

+1.5

+1.0

+0.5

*qVC FOR V

CE(sat)

0

-0.5

-1.0

-1.5

qVB FOR V

-2.0

V

-2.5

0.04 0.06 0.1 0.4 4.00.2 1.0 2.00.6

BE

IC, COLLECTOR CURRENT (AMP)

IC/IB = 10

5.0

25°C to 150°C

-55°C to 25°C

25°C to 150°C

-55°C to 25°C

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5

MJE243 − NPN, MJE253 − PNP

PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE Z

−B−

U

Q

132

H

F

−A−

K

M

V

G

S

D

2 PL

0.25 (0.010) B

M

0.25 (0.010) B

M

A

M

C

J

R

M

A

M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09.

DIM MIN MAX MIN MAX

A 0.425 0.435 10.80 11.04 B 0.295 0.305 7.50 7.74 C 0.095 0.105 2.42 2.66 D 0.020 0.026 0.51 0.66

F 0.115 0.130 2.93 3.30 G 0.094 BSC 2.39 BSC H 0.050 0.095 1.27 2.41 J 0.015 0.025 0.39 0.63 K 0.575 0.655 14.61 16.63 M 5 TYP 5 TYP

__

Q 0.148 0.158 3.76 4.01 R 0.045 0.065 1.15 1.65 S 0.025 0.035 0.64 0.88 U 0.145 0.155 3.69 3.93 V 0.040 --- 1.02 ---

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

MILLIMETERSINCHES

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MJE243/D

6