Datasheet MJE18604D2 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

 

#!" ) #!" #' #)(%*  (.* *'+#+,(* .#," ',!*, (%%,(*&#,,* #( ' -#%,#'  ##', ',#+,-*,#(' ,.(*$ (*   ))%#,#('+

The MJE18604D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). Tight dynamic characteristics and lot to lot low spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no more a need to guarantee an hfe window.

Main features:

• Low Base Drive Requirement

• High DC Current Gain (30 Typical) @ IC = 400 mA

• Extremely Low Storage Time Min/Max Guarantees Due to the Internal Active

Antisaturation (H2BIP) Structure which Minimizes the Spread

• Integrated Collector–Emitter Free Wheeling Diode Matched with the Power

Transistor

• Fully Characterized and Guaranteed Dynamic V

CE(sat)

• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

Value

ÎÎÎÎ

Unit

Collector–Emitter Breakdown Voltage

V

CEO

ОООООООО

800

ÎÎÎÎ

Vdc

Collector–Emitter Sustaining Voltage @ R = 200 Ω

V

CER

ОООООООО

800

ÎÎÎÎ

Vdc

Collector–Base Breakdown Voltage

V

CBO

ОООООООО

1600

ÎÎÎÎ

Vdc

Collector–Emitter Breakdown Voltage

V

CES

ОООООООО

1600

ÎÎÎÎ

Vdc

Emitter–Base Voltage

V

EBO

ОООООООО

12

ÎÎÎÎ

Vdc

Collector Current — Continuous

— Peak (1)

I

C

I

CM

ОООООООО

3 8

ÎÎÎÎ

Adc

Base Current — Continuous

Base Current — Peak (1)

I

B

I

BM

ОООООООО

2 4

ÎÎÎÎ

Adc

*Total Device Dissipation @ TC = 25_C

*Derate above 25°C

P

D

ОООООООО

100

0.8

ÎÎÎÎ

Watt

W/_C

Operating and Storage Temperature

TJ, T

stg

ОООООООО

–65 to 150

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

R

θJC

R

θJA

ОООООООО

1.25

62.5

ÎÎÎÎ

_

C/W

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

T

L

ОООООООО

260

ÎÎÎÎ

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

This document contains information on a new product. Specifications and information herein are subject to change without notice. Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE18604D2/D

 Motorola, Inc. 1995



POWER TRANSISTORS

3 AMPERES 1600 VOLTS

100 WATTS

CASE 221A–06

TO–220AB

MJE18604D2

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS

(T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH, RBE = 200 Ω)

V

CER(sus)

800

Vdc

Collector–Base Breakdown Voltage

(I

CBO

= 1 mA)

V

CBO

1600

Vdc

Emitter–Base Breakdown Voltage

(I

EBO

= 1 mA)

V

EBO

12

14

Vdc

Collector Cutoff Current

(V

CBO

= Rated V

CBO

, IB = 0)

I

CBO

100

µAdc

Collector Cutoff Current (VCE = Rated V

CES

, VEB = 0)

Collector Cutoff Current (VCE = 1300 V, VEB = 0)

@ TC = 25°C @ TC = 125°C @ TC = 125°C

I

CES

100

1000

100

µAdc

Emitter–Cutoff Current

(VEB = 11 Vdc, IC = 0)

I

EBO

500

µAdc

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(IC = 0.5 Adc, IB = 0.1 Adc)

@ TC = 25°C @ TC = 125°C

0.8

0.6

1.1 1

(IC = 1 Adc, IB = 0.1 Adc)

@ TC = 25°C @ TC = 125°C

0.8

1 1

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C @ TC = 125°C

0.9

0.8

1.2

1.1

Collector–Emitter Saturation Voltage

(IC = 250 mAdc, IB = 25 mAdc)

@ TC = 25°C @ TC = 125°C

1

1.7

1.25

(IC = 0.5 Adc, IB = 50 mAdc)

@ TC = 25°C @ TC = 125°C

2.1 4

2.4

(IC = 0.8 Adc, IB = 80 mAdc)

@ TC = 25°C @ TC = 125°C

3.7

5

DC Current Gain

(IC = 0.4 Adc, VCE = 3 Vdc)

@ TC = 25°C @ TC = 125°C

20

6

10

40

(IC = 5 mAdc, VCE = 10 Vdc)

@ TC = 25°C @ TC = 125°C

20 20

35 55

DYNAMIC SATURATION VOLTAGE

@ 1 µs

@ TC = 25°C @ TC = 125°C

4.7

9.3

Dynamic Saturation Voltage:

Determined 1 µs and

IB1 = 50 mA

VCC = 300 V

@ 3 µs

@ TC = 25°C @ TC = 125°C

2.6

5.4

µs and 3 µs respectively after rising IB1 reaches

@ 1 µs

@ TC = 25°C @ TC = 125°C

9.7 18

90% of final I

B1

IB1 = 50 mA

VCC = 300 V

@ 3 µs

@ TC = 25°C @ TC = 125°C

6.4

12.3

DIODE CHARACTERISTICS

Forward Diode Voltage

(IEC = 0.4 Adc)

@ TC = 25°C @ TC = 125°C

ÎÎÎ

0.9

0.6

1.2

(IEC = 1 Adc)

@ TC = 25°C @ TC = 125°C

ÎÎÎ

1.05

0.7

1.5

Forward Recovery Time

(IF = 0.4 Adc, di/dt = 10 A/µs)

@ TC = 25°C @ TC = 125°C

ÎÎÎ

0.9

1.5

(IF = 1.0 Adc, di/dt = 10 A/µs)

@ TC = 25°C @ TC = 125°C

ÎÎÎ

1.15

1.6

IC = 0.3 Adc

IC = 0.5 Adc

V

BE(sat)

V

CE(sat)

h

FE

V

CE(dsat)

V

EC

t

fr

Vdc

—

V

µs

MJE18604D2

3

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

ÎÎÎ

Typ

Max

Unit

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

f

T

ÎÎÎ

13

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

C

ob

ÎÎÎ

230

500

pF

Input Capacitance

(VCE = 8 Vdc)

C

ib

ÎÎÎ

480

1000

pF

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)

Delay Time

@ TC = 25°C @ TC = 125°C

t

d

ÎÎÎ

95

110

150

ns

Rise Time

B1

= 66 mAdc

@ TC = 25°C @ TC = 125°C

t

r

ÎÎÎ

475 900

750

ns

Storage Time

IB1 = 66 mAdc

IB2 = 390 mAdc

VCC = 125 V

@ TC = 25°C @ TC = 125°C

t

s

400

ÎÎÎ

910

700

ns

Fall Time

@ TC = 25°C @ TC = 125°C

t

f

ÎÎÎ

675 775

850

ns

Turn–on Time

@ TC = 25°C @ TC = 125°C

t

on

ÎÎÎ

440 570

ns

Storage Time

B1

= 50 mAdc

@ TC = 25°C @ TC = 125°C

t

s

ÎÎÎ

4

5.9

µs

Fall Time

IB1 = 50 mAdc IB2 = 50 mAdc

VCC = 125 V

@ TC = 25°C @ TC = 125°C

t

f

ÎÎÎ

375 675

ns

Turn–off Time

@ TC = 25°C @ TC = 125°C

t

off

ÎÎÎ

4.5

6.6

µs

Turn–on Time

@ TC = 25°C @ TC = 125°C

t

on

ÎÎÎ

465 550

600

ns

Storage Time

B1

= 50 mAdc

@ TC = 25°C @ TC = 125°C

t

s

500

ÎÎÎ

1800

800

ns

Fall Time

IB1 = 50 mAdc

IB2 = 150 mAdc

VCC = 125 V

@ TC = 25°C @ TC = 125°C

t

f

ÎÎÎ

800 550

1000

ns

Turn–off Time

@ TC = 25°C @ TC = 125°C

t

off

ÎÎÎ

1.5

2.4

1.75

µs

Turn–on Time

@ TC = 25°C @ TC = 125°C

t

on

ÎÎÎ

550

1300

ns

Storage Time

B1

= 50 mAdc

@ TC = 25°C @ TC = 125°C

t

s

ÎÎÎ

4.35 5

µs

Fall Time

IB1 = 50 mAdc IB2 = 50 mAdc

VCC = 125 V

@ TC = 25°C @ TC = 125°C

t

f

ÎÎÎ

500

2000

ns

Turn–off Time

@ TC = 25°C @ TC = 125°C

t

off

ÎÎÎ

4.8 7

µs

Delay Time

@ TC = 25°C

t

d

ÎÎÎ

100

300

ns

Rise Time

IC = 0.5 Adc

IB1 = 50 mAdc

@ TC = 25°C

t

r

ÎÎÎ

300

800

ns

Storage Time

IB1 = 50 mAdc

IB2 = 250 mAdc

@ TC = 25°C

t

s

ÎÎÎ

1

1.2

µs

Fall Time

VCC = 125 V

@ TC = 25°C

t

f

ÎÎÎ

200

350

ns

IC = 0.5 Adc

I

IC = 0.3 Adc

I

IC = 0.3 Adc

I

IC = 0.5 Adc

I

MJE18604D2

4

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS

(T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

ÎÎÎ

Typ

Max

Unit

SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 V)

Fall Time

@ TC = 25°C @ TC = 125°C

t

f

ÎÎÎ

170 210

ns

Storage Time

C

= 300 mAdc IB1 = 50 mAdc IB2 = 50 mAdc

V

= 300 V

@ TC = 25°C @ TC = 125°C

t

s

ÎÎÎ

1.7

2.7

µs

Crossover Time

VZ = 300 V

LC = 200 µH

@ TC = 25°C @ TC = 125°C

t

c

ÎÎÎ

150 400

ns

Fall Time

@ TC = 25°C @ TC = 125°C

t

f

ÎÎÎ

160 150

250

ns

Storage Time

C

= 300 mAdc IB1 = 50 mAdc

IB2 = 150 mAdc

V

= 300 V

@ TC = 25°C @ TC = 125°C

t

s

0.7

ÎÎÎ

1.1

1

µs

Crossover Time

VZ = 300 V

LC = 200 µH

@ TC = 25°C @ TC = 125°C

t

c

ÎÎÎ

160 160

250

ns

Fall Time

@ TC = 25°C @ TC = 125°C

t

f

ÎÎÎ

165 700

ns

Storage Time

C

= 500 mAdc IB1 = 50 mAdc IB2 = 50 mAdc

V

= 300 V

@ TC = 25°C @ TC = 125°C

t

s

ÎÎÎ

3

4.1

µs

Crossover Time

VZ = 300 V

LC = 200 µH

@ TC = 25°C @ TC = 125°C

t

c

ÎÎÎ

200 800

ns

Fall Time

@ TC = 25°C @ TC = 125°C

t

f

ÎÎÎ

110

130

175

ns

Storage Time

C

= 500 mAdc IB1 = 50 mAdc

IB2 = 250 mAdc

V

= 300 V

@ TC = 25°C @ TC = 125°C

t

s

0.7

ÎÎÎ

1.8

1

µs

Crossover Time

VZ = 300 V

LC = 200 µH

@ TC = 25°C @ TC = 125°C

t

c

ÎÎÎ

130 250

200

ns

IC = 300 mAdc

IC = 500 mAdc

MJE18604D2

5

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04

B

Q

H

Z

L

V

G

N

A

K

F

1 2 3

4

D

SEATING PLANE

–T–

C

S

T

U

R J

MJE18604D2

6

Motorola Bipolar Power Transistor Device Data

How to reach us: USA /EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

MJE18604D2/D

*MJE18604D2/D*

◊

Datasheet MJE18604D2 Datasheet (Motorola)

Specifications and Main Features

Frequently Asked Questions

User Manual