Datasheet MJF18009, MJE18009 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

  

  
 !  

The MJE/MJF18009 has an application specific state–of–the–art die designed for
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light
ballast”). These high voltage/high speed transistors exhibit the following main
features:

• Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain h

FE

— Fast Switching
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

• Full Characterization at 125_C

• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric

Distributions

• Specified Dynamic Saturation Data

• Two Package Choices: Standard TO–220 or Isolated TO–220

MAXIMUM RATINGS

Rating

Symbol

MJE18009

MJF18009

Unit

Collector–Emitter Sustaining Voltage

V

CEO

450

Vdc

Collector–Emitter Breakdown Voltage

V

CES

1000

Vdc

Collector–Base Breakdown Voltage

V

CBO

1000

Vdc

Emitter–Base Voltage

V

EBO

9

Vdc

Collector Current — Continuous

— Peak (1)

I

C

I

CM

10
20

Adc

Base Current — Continuous

— Peak (1)

I

B

I

BM

4
8

Adc

*Total Device Dissipation @ TC = 25°C

*Derate above 25_C

P

D

150

1.2

50

0.4

Watt

W/_C

Operating and Storage Temperature

TJ, T

stg

–65 to 150

_

C

RMS Isolation Voltage (2) Per Figure 22

(1s, 25°C, Humidity ≤ 30%) Per Figure 23
TC = 25°C Per Figure 24

V

ISOL1

V

ISOL2

V

ISOL3

4500
3500
1500

V

THERMAL CHARACTERISTICS

Rating

Symbol

MJE18009

MJF18009

Unit

Thermal Resistance — Junction to Case

— Junction to Ambient

R

θJC

R

θJA

0.83

62.5

2.5

62.5

_

C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

L

260

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
(2) Proper strike and creepage distance must be provided.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE18009/D

 Motorola, Inc. 1995




POWER TRANSISTORS

10 AMPERES

1000 VOLTS

50 and 150 WATTS

CASE 221A–06

TO–220AB

CASE 221D–02

TO–220 FULLPACK

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2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS

(T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

V

CEO(sus)

450

Vdc

Collector Cutoff Current

(VCE = Rated V

CEO

, IB = 0)

I

CEO

100

µAdc

Collector Cutoff Current (VCE = Rated V

CES

, VEB = 0)

Collector Cutoff Current (VCE = 800 V, VEB = 0)

@ TC = 25°C
@ TC = 125°C
@ TC = 125°C

I

CES

100
500
100

µAdc

Emitter–Cutoff Current

(VEB = 9 Vdc, IC = 0)

I

EBO

100

µAdc

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(IC = 3 Adc, IB = 0.3 Adc)
(IC = 5 Adc, IB = 1 Adc)
(IC = 7 Adc, IB = 1.4 Adc)

V

BE(sat)

0.8

0.9

0.9

1.1

1.15

1.25

Vdc

Collector–Emitter Saturation Voltage

(IC = 3 Adc, IB = 0.3 Adc)

@ TC = 25°C
@ TC = 125°C

0.3

0.3

0.6

0.65

(IC = 5 Adc, IB = 1 Adc)

@ TC = 25°C
@ TC = 125°C

0.3

0.3

0.6

0.65

(IC = 7 Adc, IB = 1.4 Adc)

@ TC = 25°C
@ TC = 125°C

0.35

0.4

0.7

0.9

DC Current Gain

(IC = 1.5 Adc, VCE = 5 Vdc)

@ TC = 25°C
@ TC = 125°C

14

29

34

(IC = 5 Adc, VCE = 1 Vdc)

@ TC = 25°C
@ TC = 125°C

10

8

13

11.5

(IC = 7 Adc, VCE = 1 Vdc)

@ TC = 25°C
@ TC = 125°C

7
5

10

7.5

—

(IC = 10 mAdc, VCE = 5 Vdc)

@ TC = 25°C

10

25

—

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

f

T

12

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

C

ob

150

200

pF

Input Capacitance

(VEB = 8 Vdc)

C

ib

2750

3500

pF

DYNAMIC SATURATION VOLTAGE

@ 1 µs

@ TC = 25°C
@ TC = 125°C

8

13.5

Dynamic Saturation
Voltage:

Determined 1 µs and

IB1 = 300 mAdc

VCC = 300 V

@ 3 µs

@ TC = 25°C
@ TC = 125°C

4
8

µs and
3 µs respectively after
rising IB1 reaches

@ 1 µs

@ TC = 25°C
@ TC = 125°C

15
21

90% of final I

B1

IB1 = 1.4 Adc
VCC = 300 V

@ 3 µs

@ TC = 25°C
@ TC = 125°C

2

2.7

V

CE(sat)

Vdc

IC = 3 Adc

IC = 7 Adc

h

FE

V

CE(dsat)

—

V

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3

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)

Turn–on Time

@ TC = 25°C
@ TC = 125°C

t

on

220
220

300

ns

Turn–off Time

IB2 = 1.5 Adc

VCC = 300 Vdc

@ TC = 25°C
@ TC = 125°C

t

off

1.28

1.6

2.5

µs

Turn–on Time

@ TC = 25°C
@ TC = 125°C

t

on

120
350

250

ns

Turn–off Time

IB2 = 2.5 Adc

VCC = 300 Vdc

@ TC = 25°C
@ TC = 125°C

t

off

2.2

2.6

2.5

µs

Turn–on Time

@ TC = 25°C
@ TC = 125°C

t

on

175
500

300

ns

Turn–off Time

IB2 = 3.5 Adc

VCC = 300 Vdc

@ TC = 25°C
@ TC = 125°C

t

off

1.75

2.1

2.5

µs

SWITCHING CHARACTERISTICS: Inductive Load (V

clamp

= 300 V, VCC = 15 V, L = 200 µH)

Fall Time

@ TC = 25°C
@ TC = 125°C

t

f

110
125

200

ns

Storage Time

IC = 3 Adc
IB1 = 0.3 Adc
I

= 1.5 Adc

@ TC = 25°C
@ TC = 125°C

t

s

2

2.6

2.75

µs

Crossover Time

IB2 = 1.5 Adc

@ TC = 25°C
@ TC = 125°C

t

c

250
300

350

ns

Fall Time

@ TC = 25°C
@ TC = 125°C

t

f

110
135

200

ns

Storage Time

IC = 5 Adc

IB1 = 1 Adc

I

= 2.5 Adc

@ TC = 25°C
@ TC = 125°C

t

s

2.4

3.1

3.5

µs

Crossover Time

IB2 = 2.5 Adc

@ TC = 25°C
@ TC = 125°C

t

c

260
300

350

ns

Fall Time

@ TC = 25°C
@ TC = 125°C

t

f

105
150

200

ns

Storage Time

IC = 7 Adc
IB1 = 1.4 Adc
I

= 3.5 Adc

@ TC = 25°C
@ TC = 125°C

t

s

1.75

2.25

2.75

µs

Crossover Time

IB2 = 3.5 Adc

@ TC = 25°C
@ TC = 125°C

t

c

225
300

350

ns

IC = 3 Adc, IB1 = 0.3 Adc

IC = 5 Adc, IB1 = 1 Adc

IC = 7 Adc, IB1 = 1.4 Adc

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4

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt

100

10

1

10010.10.01

IC, COLLECTOR CURRENT (AMPS)

h

FE

, DC CURRENT GAIN

TJ = 125°C

TJ = 25°C

TJ = –20°C

VCE = 1 V

Figure 2. DC Current Gain @ 5 Volt

100

10

1

10010.10.01

IC, COLLECTOR CURRENT (AMPS)

h

FE

, DC CURRENT GAIN

TJ = 125°C

VCE = 5 V

Figure 3. Collector Saturation Region

2

0

1010.10.01

IB, BASE CURRENT (mA)

IC = 1 A

Figure 4. Collector–Emitter Saturation Voltage

10

1

0.01

1010.10.01

IC, COLLECTOR CURRENT (AMPS)

IC/IB = 5

V

CE

, VOLTAGE (VOLTS)

V

CE

, VOLTAGE (VOLTS)

1

8 A

Figure 5. Base–Emitter Saturation Region

1.1

0.7

0.3

100.10.01

IC, COLLECTOR CURRENT (AMPS)

V

BE

, VOLTAGE (VOLTS)

1

5 A

3 A

0.1

IC/IB = 10

TJ = 125°C
TJ = 25

°

C

Figure 6. Capacitance

10

0.01
100101

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

1

C

ob

TJ = 25°C
f

(test)

= 1 MHz

0.1

C

ib

0.9

0.5

10 10

IC/IB = 5
IC/IB = 10

TJ = 25°C

TJ = 25°C

TJ = 25°C

TJ = –20°C

TJ = 125°C

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5

Motorola Bipolar Power Transistor Device Data

t, TIME (ns)

TYPICAL SWITCHING CHARACTERISTICS

Figure 7. Resistive Switching, t

on

2

0

1041

IC, COLLECTOR CURRENT (AMPS)

7

1

IC/IB = 10

IC/IB = 5

I

Boff

= IC/2
VCC = 300 V
PW = 20 µs

Figure 8. Resistive Switching, t

off

5

2

0

1071

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Inductive Storage Time, t

si

5

2

0

1031

IC, COLLECTOR CURRENT (AMPS)

5

3

1

3

t, TIME ( s)

µ

4

1

TJ = 125°C
TJ = 25

°

C

IC/IB = 10

IC/IB = 5

I

Boff

= IC/2
VCC = 300 V
PW = 20 µs

4

TJ = 125°C
TJ = 25

°

C

I

Boff

= IC/2
VCC = 15 V
VZ = 300 V
LC = 200

µ

H

Figure 10. Inductive Storage Time

4

IC/IB = 5

6

2

0

1573

hFE, FORCED GAIN

13

4

1

9

TJ = 125°C
TJ = 25

°

C

Figure 11. Inductive Switching,

tc & tfi @ IC/IB = 5

350

100

1131

IC, COLLECTOR CURRENT (AMPS)

7

t, TIME (ns)

300

250

150

TJ = 125°C
TJ = 25

°

C

200

5

Figure 12. Inductive Switching,

tc & tfi @ IC/IB = 10

300

0

IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

200

100

TJ = 125°C
TJ = 25

°

C

t, TIME ( s)

µ

TJ = 125°C
TJ = 25

°

C

4

2 7 986

IC/IB = 10

, STORAGE TIME (t

si

µ

s)

5

3

5 11

I

Boff

= IC/2
VCC = 15 V
VZ = 300 V
LC = 200

µ

H

IC = 3 A

IC = 6.5 A

9

I

Boff

= IC/2
VCC = 15 V
VZ = 300 V
LC = 200

µ

H

t

c

t

fi

1031 542 7 986

I

Boff

= IC/2
VCC = 15 V
VZ = 300 V
LC = 200

µ

H

t

c

t

fi

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6

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Figure 13. Inductive Fall Time

160

40

1573

hFE, FORCED GAIN

Figure 14. Inductive Crossover Time

400

200

100

1553

hFE, FORCED GAIN

300120

t

fi

, FALL TIME (ns)

t

c

, CROSSOVER TIME (ns)

140

100

80

4 6 8 9

TJ = 125°C
TJ = 25

°

C

7

TJ = 125°C
TJ = 25

°

C

10 11 12

60

5 13 14

I

Boff

= IC/2
VCC = 15 V
VZ = 300 V
LC = 200

µ

H

IC = 3 A

IC = 6.5 A

9 11 13

I

Boff

= IC/2
VCC = 15 V
VZ = 300 V
LC = 200

µ

H

IC = 3 A

IC = 6.5 A

TYPICAL CHARACTERISTICS

Figure 15. Forward Bias Safe Operating Area

100

0.01
100010

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 16. Reverse Bias Switching Safe

Operating Area

12

4

0

1100200

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

8

100 500

1

0.1

I

C

, COLLECTOR CURRENT (AMPS)

I

C

, COLLECTOR CURRENT (AMPS)

5 ms

1 ms

10 µs

1 µs

EXTENDED

SOA

0 V

–1.5 V

–5 V

TC ≤ 125°C
GAIN

≥

4

LC = 500

µ

H

10

800

MJE18009–DC

MJF18009–DC

POWER DERATING FACTOR

Figure 17. Forward Bias Power Derating

There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC–V

CE

limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate. The data of
Figure 1 5 is based on TC = 2 5°C; TJ(pk) i s variable
depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% but must be derated when
TC > 25°C. Second breakdown limitations do not derate the
same a s thermal limitations. Allowable c urrent at t he
voltages shown on Figure 15 may be found at any case
temperature by using the appropriate curve on Figure 17.

TJ(pk) may be calculated from the data in Figures 20 and

21. At any case temperatures, thermal limitations will
reduce the power that can be handled to values less than
the limitations imposed by second breakdown. For induc­tive loads, high voltage and current must be sustained
simultaneously during turn–off with the base–to–emitter
junction reverse biased. The safe level is specified as a
reverse–biased safe operating area (Figure 16). This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.

TC, CASE TEMPERATURE (°C)

1.0

0.8

0.6

0.4

0.2

0

16014012010080604020

SECOND

BREAKDOWN

DERATING

THERMAL

DERATING

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7

Motorola Bipolar Power Transistor Device Data

Figure 18. Dynamic Saturation

Voltage Measurements

Figure 19. Inductive Switching Measurements

TYPICAL SWITCHING CHARACTERISTICS

(IB = IC/2 FOR ALL CURVES)

TIME

10

4

0

820 6

8

6

2

4

9

7

5

3

1

1 3 5

7

V

CE

0 V

I

B

90% I

B

1 µs

3 µs

dyn 1 µs

dyn 3 µs

I

B

I

C

V

clamp

t

si

t

c

t

fi

90% I

C

10% I

C

90% I

B1

10% V

clamp

TIME

Table 1. Inductive Load Switching Drive Circuit

V

(BR)CEO(sus)

L = 10 mH
RB2 =

∞

VCC = 20 Volts
I

C(pk)

= 100 mA

Inductive Switching

L = 200

µ

H
RB2 = 0
VCC = 15 Volts
RB1 selected for

desired I

B1

RBSOA

L = 500

µ

H
RB2 = 0
VCC = 15 Volts
RB1 selected for

desired I

B1

+15 V

1

µ

F

150

Ω

3 W

100

Ω

3 W

MPF930

+10 V

50

Ω

COMMON

–V

off

500

µ

F

MPF930

MTP8P10

MUR105

MJE210

MTP12N10

MTP8P10

150

Ω

3 W

100

µ

F

I

out

A

1

µ

F

IC PEAK

VCE PEAK

V

CE

I

B

IB1

IB2

R

B2

R

B1

 

8

Motorola Bipolar Power Transistor Device Data

0.2

TYPICAL THERMAL RESPONSE

(IB = IC/2 FOR ALL CURVES)

0.01
t, TIME (ms)

Figure 20. Typical Thermal Response (Z

θJC

(t)) for MJE18009

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

R

θ

JC

(t) = r(t) R

θ

JC

R

θ

JC

= 0.83

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

0.2

0.02

0.1

D = 0.5

SINGLE PULSE

0.01 0.1 1 10 100 1000

0.1

1

0.01

Figure 21. Typical Thermal Response (Z

θJC

(t)) for MJF18009

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

R

θ

JC

(t) = r(t) R

θ

JC

R

θ

JC

= 2.5

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

0.02

0.1

SINGLE PULSE

0.01 0.1 1 10 100 100000

0.1

1

1000 10000

0.05

0.05

D = 0.5

t, TIME (ms)

 

9

Motorola Bipolar Power Transistor Device Data

MOUNTED

*Measurement made between leads and heatsink with all leads shorted together

CLIP

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

CLIP

0.107

″

MIN

MOUNTED

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

0.107″ MIN

Figure 23. Clip Mounting Position

for Isolation Test Number 2

Figure 24. Screw Mounting Position

for Isolation Test Number 3

TEST CONDITIONS FOR ISOLATION TESTS*

4–40 SCREW

PLAIN WASHER

HEATSINK

COMPRESSION WASHER

NUT

CLIP

HEATSINK

Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in.lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a
constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in.lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in.lbs without adversely affecting the pack­age. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in.lbs of mounting torque under any mounting conditions.

Figure 25. Typical Mounting Techniques

for Isolated Package

Figure 25a. Screw–Mounted Figure 25b. Clip–Mounted

MOUNTING INFORMATION**

**For more information about mounting power semiconductors see Application Note AN1040.

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

FULLY ISOLATED

PACKAGE

LEADS

HEATSINK

″

MIN

0.110

Figure 22. Clip Mounting Position for

Isolation Test Number 1

 

10

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04

B

Q

H

Z

L

V

G

N

A

K

F

1 2 3

4

D

SEATING
PLANE

–T–

C

S

T

U

R
J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. GATE

2. DRAIN

3. SOURCE

DIMAMIN MAX MIN MAX

MILLIMETERS

0.621 0.629 15.78 15.97

INCHES

B 0.394 0.402 10.01 10.21
C 0.181 0.189 4.60 4.80
D 0.026 0.034 0.67 0.86
F 0.121 0.129 3.08 3.27
G 0.100 BSC 2.54 BSC
H 0.123 0.129 3.13 3.27
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.14 1.52
N 0.200 BSC 5.08 BSC
Q 0.126 0.134 3.21 3.40
R 0.107 0.111 2.72 2.81
S 0.096 0.104 2.44 2.64
U 0.259 0.267 6.58 6.78

–B–

–Y–

G
N

D

L

K

H

A

F

Q

3 PL

1 2 3

M

B

M

0.25 (0.010) Y

SEATING
PLANE

–T–

U

C

S

J

R

CASE 221D–02

(ISOLATED TO–220 TYPE)

UL RECOGNIZED: FILE #E69369

ISSUE D

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