Datasheet mje18006-d Datasheet

MJE18006G

SWITCHMODEt

NPN Bipolar Power Transistor For Switching Power Supply Applications

The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.

Features

• Improved Efficiency Due to Low Base Drive Requirements:

♦ High and Flat DC Current Gain h ♦ Fast Switching ♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)

FE

• Tight Parametric Distributions are Consistent Lot−to−Lot

• Standard TO−220

• These Devices are Pb−Free and are RoHS Compliant*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Sustaining Voltage V

Collector−Emitter Breakdown Voltage V

Emitter−Base Voltage V

Collector Current − Continuous

− Peak (Note 1)

Base Current − Continuous

− Peak (Note 1)

Total Device Dissipation @ TC = 25_C Derate above 25°C

Operating and Storage Temperature TJ, T

CEO

CES

EBO

I

CM

I

BM

P

C

B

D

stg

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

R

q

JC

R

q

JA

T

L

450 Vdc

1000 Vdc

9.0 Vdc

6.0 15

4.0

8.0

100

0.8

−65 to 150

1.25

62.5

260

Adc

W

W/_C

_C

_C/W

_C

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POWER TRANSISTOR

6.0 AMPERES

1000 VOLTS − 100 WATTS

TO−220AB

CASE 221A−09

STYLE 1

1

2

3

MARKING DIAGRAM

MJE18006G

AY WW

A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package

ORDERING INFORMATION

Device Package Shipping

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

April, 2010 − Rev. 7

1 Publication Order Number:

MJE18006G TO−220

(Pb−Free)

50 Units / Rail

MJE18006/D

MJE18006G

ООООО

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25_C unless otherwise specified)

C

Symbol

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)

Collector Cutoff Current (VCE = Rated V

CEO

, VEB = 0)

CES

, IB = 0)

(T

= 125_C)

C

V

CEO(sus)

I

CEO

I

CES

Collector Cutoff Current (VCE = 800 V, VEB = 0) (TC = 125_C)

Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)

I

EBO

ON CHARACTERISTICS

Base−Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc)

Base−Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc)

Collector−Emitter Saturation Voltage

(IC = 1.3 Adc, IB = 0.13 Adc)

V

BE(sat)

V

CE(sat)

(TC = 125_C)

(IC = 3.0 Adc, IB = 0.6 Adc)

(TC = 125_C)

DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc)

h

(TC = 125_C)

DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc)

(TC = 125_C)

DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc) (TC = 25 to 125_C) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance (VEB = 8.0 V)

Dynamic Saturation Voltage:

Determined 1.0 ms and

3.0 ms respectively after

(IC = 1.3 Adc

IB1 = 130 mAdc

VCC = 300 V)

1.0 ms

3.0 ms rising IB1 reaches 90% of final I

B1

(see Figure 18)

(IC = 3.0 Adc

1.0 ms

IB1 = 0.6 Adc VCC = 300 V)

3.0 ms

(TC = 125°C)

C

V

CE(dsat)

SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)

Turn−On Time

(IC = 3.0 Adc, IB1 = 0.6 Adc,

IB2 = 1.5 Adc, VCC = 300 V)

(TC = 125°C)

Turn−Off Time

(TC = 125°C)

Turn−On Time

(IC = 1.3 Adc, IB1 = 0.13 Adc, IB2 = 0.65 Adc, VCC = 300 V)

(TC = 125°C)

Turn−Off Time

(TC = 125°C)

SWITCHING CHARACTERISTICS: Inductive Load (V

Fall Time

(IC = 1.5 Adc, IB1 = 0.13 Adc,

IB2 = 0.65 Adc)

= 300 V, VCC = 15 V, L = 200 mH)

clamp

(TC = 125°C)

Storage Time

(TC = 125°C)

Crossover Time

(TC = 125°C)

Fall Time

(IC = 3.0 Adc, IB1 = 0.6 Adc,

IB2 = 1.5 Adc)

(TC = 125°C)

Storage Time

(TC = 125°C)

Crossover Time

(TC = 125°C)

2. Proper strike and creepage distance must be provided.

Min

450

−

Typ

−

0.83

0.94

Max

−

100

100 500 100

100

1.2

1.3

Unit

Vdc

mAdc

Vdc

−

FE

14

−

6.0

5.0 11 10

f

T

ob

ib

−

t

on

t

off

t

on

t

off

t

fi

t

si

t

c

t

fi

t

si

t

c

−

0.25

0.27

0.35

0.4

−

32 10

8.0 17 22

14

75

1000

5.5 12

3.0

7.0

9.5

14.5

2.0

7.5

90

100

1.7

2.1

200 130

1.2

1.5

100 120

1.5

1.9

220 230

85

120

2.15

2.75

200 310

0.6

0.65

0.7

0.8

34

−

120

1500

−

180

−

2.5

−

300

−

2.5

−

180

−

2.5

−

350

−

150

−

3.2

−

300

−

MHz

pF

V

ns

ms

ns

ms

ns

ms

ns

ms

ns

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2

MJE18006G

TYPICAL STATIC CHARACTERISTICS

100

, DC CURRENT GAIN

FE

h

10

1

0.01

2

1.5

1

TJ = 125°C

TJ = 25°C

TJ = -20°C

0.1

IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

TJ = 25°C

IC = 1 A 3 A 5 A 6 A

2 A

100

VCE = 1 V

110

TJ = 125°C

TJ = 25°C

TJ = -20°C

10

, DC CURRENT GAIN

FE

h

1

0.01 0.1 1 10

10

1

VCE = 5 V

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 5 Volts

, VOLTAGE (VOLTS)

V

, VOLTAGE (VOLTS)

V

CE

BE

0.5

1.3

1.2

1.1

0.9

0.8

0.7

0.6

0.5

0.4

0

0.01

1

0.01

IC/IB = 10

, VOLTAGE (VOLTS)

0.1

CE

V

0.1 1 10

IB, BASE CURRENT (AMPS)

0.01

IC/IB = 5

0.1

IC COLLECTOR CURRENT (AMPS)

TJ = 25°C TJ = 125°C

110

Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage

10000

C

ib

C

10

100

TJ = 25°C

TJ = 125°C

IC/IB = 5 IC/IB = 10

0.1 1 10

IC, COLLECTOR CURRENT (AMPS)

1000

100

10

C, CAPACITANCE (pF)

1

1 1000

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

TJ = 25°C f = 1 MHz

ob

Figure 5. Base−Emitter Saturation Region Figure 6. Capacitance

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3

MJE18006G

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

2000

I

= IC/2

t, TIME (ns)

1500

1000

B(off)

VCC = 300 V PW = 20 ms

IC/IB = 5 IC/IB = 10

TJ = 125°C

TJ = 25°C

500

0

1350 35

2

46

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Resistive Switching, t

on

3500

I

= IC/2

3000

IC/IB = 5

B(off)

VCC = 15 V VZ = 300 V

2500

LC = 200 mH

2000

1500

t, TIME (ns)

1000

500

0

034

TJ = 25°C TJ = 125°C

1

IC/IB = 10

256

IC COLLECTOR CURRENT (AMPS)

4000

3500

3000

2500

2000

t, TIME (ns)

1500

1000

500

0

5000

4500

4000

3500

3000

2500

2000

, STORAGE TIME (ns)

1500

si

t

1000

500

0

IC/IB = 5

TJ = 25°C TJ = 125°C

IC/IB = 10

1

462

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Resistive Switching, t

TJ = 25°C TJ = 125°C

IC = 3 A

3

4 5 7 8 10 11 13 14

6

hFE, FORCED GAIN

9

I

= IC/2

B(off)

VCC = 300 V PW = 20 ms

off

I

= IC/2

B(off)

VCC = 15 V VZ = 300 V LC = 200 mH

IC = 1.3 A

12 15

Figure 9. Inductive Storage Time, t

si

350

300

t

c

250

t, TIME (ns)

200

150

100

I

B(off)

= IC/2

t

fi

VCC = 15 V

50

VZ = 300 V LC = 200 mH

0

0235

11

TJ = 25°C TJ = 125°C

46

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Switching, t

and t

c

IC/IB = 5

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Figure 10. Inductive Storage Time, tsi(hFE)

250

200

I

= IC/2

B(off)

VCC = 15 V

150

VZ = 300 V LC = 200 mH

t, TIME (ns)

100

TJ = 25°C

50

TJ = 125°C

IC, COLLECTOR CURRENT (AMPS)

fi

Figure 12. Inductive Switching, t

t

c

t

fi

460235

and t

c

fi

IC/IB = 10

4

MJE18006G

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

180

160

140

120

, FALL TIME (ns)

fi

100

t

80

60

3

100

10

1

350

300

IC = 3 A

IC = 1.3 A

TJ = 25°C T

= 125°C

J

515

4 67891011121314

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

I

= IC/2

B(off)

V

= 15 V

CC

= 300 V

V

Z

LC = 200 mH

250

200

150

, CROSSOVER TIME (ns)

C

T

100

IC = 1.3 A

TJ = 25°C

50

35 154 6 7 8 91011121314

TJ = 125°C

Figure 14. Inductive Crossover Time

GUARANTEED SAFE OPERATING AREA INFORMATION

DC (MJE18006)

5 ms

1 ms

10 ms 1 ms

EXTENDED

SOA

1,0

0,8

0,6

0,4

IC = 3 A

hFE, FORCED GAIN

I

= IC/2

B(off)

VCC = 15 V V

= 300 V

Z

= 200 mH

L

C

SECOND BREAKDOWN

DERATING

0.1

, COLLECTOR CURRENT (AMPS)

C

I

0.01 10

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

100 1000

Figure 15. Forward Bias Safe Operating Area

7

TC ≤ 125°C IC/I

6

5

4

3

2

, COLLECTOR CURRENT (AMPS)

C

1

I

0

0 200

V

= 0 V

BE(off)

400

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

-1, 5 V

600 1000

≥ 4

B

LC = 500 mH

-5 V

800

Figure 16. Reverse Bias Switching Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − V

CE

limits of the transistor that must be observed for reliable

POWER DERATING FACTOR

0,2

0,0

20

40 60 100 120

THERMAL DERATING

80 140 160

TC, CASE TEMPERATURE (°C)

Figure 17. Forward Bias Power Derating

operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; T

is variable depending on power

J(pk)

level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. T

may be calculated

J(pk)

from the data in Figure 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base−to−emitter junction reverse−biased. The safe level is specified as a reverse−biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

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5

MJE18006G

5

V

CE

4

3

2

dyn 1 ms

dyn 3 ms

1

0

VOLTS

-1

-2

-3

-4

-5 012345678

90% I

B

1 ms

I

B

3 ms

TIME

Figure 18. Dynamic Saturation Voltage Measurements

+15 V

150 W

3 W

MTP8P10

MUR105

MJE210

MTP12N10

+10 V

COMMON

-V

off

1 mF

MPF930

50 W

150 W

3 W

MPF930

500 mF

100 W

3 W

10

I

9

C

8

7

t

si

6

5

V

CLAMP

10% V

CLAMP

90% I

C

t

fi

t

c

4

I

B

3

90% IB1

2

1

0

012 34567 8

TIME

Figure 19. Inductive Switching Measurements

IC PEAK

100 mF

VCE PEAK

V

R

B1

I

out

A

R

B2

1 mF

CE

IB1

I

B

V(BR)CEO(sus)

L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA

IB2

INDUCTIVE SWITCHING

L = 200 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1

RBSOA

L = 500 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1

10% I

C

0.1

(NORMALIZED)

r(t), TRANSIENT THERMAL RESISTANCE

0.01

Table 1. Inductive Load Switching Drive Circuit

TYPICAL THERMAL RESPONSE

1

D = 0.5

0.2

0.1

0.05

0.02

SINGLE PULSE

0.01 0.1 1 10 100 1000

Figure 20. Typical Thermal Response (Z

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P

t, TIME (ms)

6

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

(t)) for MJE18006

q

JC

R

(t) = r(t) R

q

JC

R

q

JC

q

JC

= 1.25°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t T

- TC = P

J(pk)

2

(pk)

1

R

(t)

q

JC

MJE18006G

PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AF

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

SEATING

−T−

PLANE

B

4

Q

123

F

T

A

U

C

S

H

K

Z

L

V

R

J

G

D

N

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

DIM MIN MAX MIN MAX

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.161 3.61 4.09

G 0.095 0.105 2.42 2.66

H 0.110 0.155 2.80 3.93 J 0.014 0.025 0.36 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33

Q 0.100 0.120 2.54 3.04

R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MILLIMETERSINCHES

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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MJE18006/D

7