Datasheet MJE18004D2 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

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The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Main features:

• Low Base Drive Requirement

• High Peak DC Current Gain (55 Typical) @ IC = 100 mA

• Extremely Low Storage Time Min/Max Guarantees Due to the

H2BIP Structure which Minimizes the Spread

• Integrated Collector–Emitter Free Wheeling Diode

• Fully Characterized and Guaranteed Dynamic V

CE(sat)

• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

It’s characteristics make it also suitable for PFC application.

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

Value

ÎÎÎÎ

Unit

Collector–Emitter Sustaining Voltage

V

CEO

ОООООООО

450

ÎÎÎÎ

Vdc

Collector–Base Breakdown Voltage

V

CBO

ОООООООО

1000

ÎÎÎÎ

Vdc

Collector–Emitter Breakdown Voltage

V

CES

ОООООООО

1000

ÎÎÎÎ

Vdc

Emitter–Base Voltage

V

EBO

ОООООООО

12

ÎÎÎÎ

Vdc

Collector Current — Continuous

Collector Current — Peak (1)

I

C

I

CM

ОООООООО

5

10

ÎÎÎÎ

Adc

Base Current — Continuous

Base Current — Peak (1)

I

B

I

BM

ОООООООО

2 4

ÎÎÎÎ

Adc

*Total Device Dissipation @ TC = 25_C

*Derate above 25°C

P

D

ОООООООО

75

0.6

ÎÎÎÎ

Watt

W/_C

Operating and Storage Temperature

TJ, T

stg

ОООООООО

–65 to 150

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

R

θJC

R

θJA

ОООООООО

1.65

62.5

ÎÎÎÎ

_

C/W

Maximum Lead Temperature for Soldering Purposes:

1/8″ from case for 5 seconds

T

L

ОООООООО

260

ÎÎÎÎ

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE18004D2/D

 Motorola, Inc. 1995



POWER TRANSISTORS

5 AMPERES 1000 VOLTS

75 WATTS

CASE 221A–06

TO–220AB

MJE18004D2

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS

(T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

(IC = 100 mA, L = 25 mH)

V

CEO(sus)

450

547

Vdc

Collector–Base Breakdown Voltage

(I

CBO

= 1 mA)

V

CBO

1000

1100

Vdc

Emitter–Base Breakdown Voltage

(I

EBO

= 1 mA)

V

EBO

12

14

Vdc

Collector Cutoff Current

(VCE = Rated V

CEO

, IB = 0)

I

CEO

100

µAdc

Collector Cutoff Current (VCE = Rated V

CES

, VEB = 0)

Collector Cutoff Current (VCE = 500 V, VEB = 0)

@ TC = 25°C @ TC = 125°C @ TC = 125°C

I

CES

100 500 100

µAdc

Emitter–Cutoff Current

(VEB = 10 Vdc, IC = 0)

I

EBO

100

µAdc

ON CHARACTERISTICS

Base–Emitter Saturation Voltage

(IC = 0.8 Adc, IB = 80 mAdc)

@ TC = 25°C @ TC = 125°C

0.8

0.7

1

0.9

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C @ TC = 125°C

0.9

0.8

1

0.9

Collector–Emitter Saturation Voltage

(IC = 0.8 Adc, IB = 80 mAdc)

@ TC = 25°C @ TC = 125°C

0.38

0.55

0.5

0.75

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C @ TC = 125°C

0.45

0.75

0.75 1

(IC = 0.8 Adc, IB = 40 mAdc)

@ TC = 25°C @ TC = 125°C

0.9

1.6

1.5

(IC = 1 Adc, IB = 0.2 Adc)

@ TC = 25°C @ TC = 125°C

0.25

0.28

0.5

0.6

DC Current Gain

(IC = 0.8 Adc, VCE = 1 Vdc)

@ TC = 25°C @ TC = 125°C

15 10

28 14

(IC = 2 Adc, VCE = 1 Vdc)

@ TC = 25°C @ TC = 125°C

6 4

8 6

(IC = 1 Adc, VCE = 2.5 Vdc)

@ TC = 25°C @ TC = 125°C

18 14

28 20

DYNAMIC SATURATION VOLTAGE

@ 1 µs

@ TC = 25°C @ TC = 125°C

9

16

Dynamic Saturation Voltage:

Determined 1 µs and

IB1 = 100 mA

VCC = 300 V

@ 3 µs

@ TC = 25°C @ TC = 125°C

3.1 9

µs and 3 µs respectively after rising IB1 reaches

@ 1 µs

@ TC = 25°C @ TC = 125°C

11 18

90% of final I

B1

IB1 = 0.4 A

VCC = 300 V

@ 3 µs

@ TC = 25°C @ TC = 125°C

1.4 8

V

BE(sat)

Vdc

IC = 1 Adc

IC = 2 Adc

V

CE(sat)

h

FE

V

CE(dsat)

Vdc

—

V

MJE18004D2

3

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

ÎÎÎ

Typ

Max

Unit

DIODE CHARACTERISTICS

Forward Diode Voltage

(IEC = 1 Adc)

@ TC = 25°C @ TC = 125°C

ÎÎÎ

0.96

0.72

1.5

(IEC = 2 Adc)

@ TC = 25°C @ TC = 125°C

ÎÎÎ

1.15

0.8

1.7

Forward Recovery Time

(IF = 0.4 Adc, di/dt = 10 A/µs)

@ TC = 25°C

ÎÎÎ

440

(IF = 1 Adc, di/dt = 10 A/µs)

@ TC = 25°C

ÎÎÎ

335

(IF = 2 Adc, di/dt = 10 A/µs)

@ TC = 25°C

ÎÎÎ

335

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

f

T

ÎÎÎ

13

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

C

ob

ÎÎÎ

60

100

pF

Input Capacitance

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

C

ib

ÎÎÎ

450

750

pF

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 µs)

Turn–on Time

@ TC = 25°C

t

on

ÎÎÎ

500

750

ns

Turn–off Time

IB2 = 1 Adc

VCC = 250 Vdc

@ TC = 25°C

t

off

1.1

ÎÎÎ

1.4

µs

Turn–on Time

@ TC = 25°C @ TC = 125°C

t

on

ÎÎÎ

100 150

150

ns

Turn–off Time

IB2 = 1 Adc

VCC = 300 Vdc

@ TC = 25°C @ TC = 125°C

t

off

ÎÎÎ

1.15

1.6

1.3

µs

Turn–on Time

@ TC = 25°C @ TC = 125°C

t

on

ÎÎÎ

120 500

150

ns

Turn–off Time

IB2 = 0.5 Adc

VCC = 300 Vdc

@ TC = 25°C @ TC = 125°C

t

off

1.85

ÎÎÎ

2.6

2.15

µs

SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 V)

Fall Time

@ TC = 25°C @ TC = 125°C

t

f

ÎÎÎ

130 300

175

ns

Storage Time

C

= 2.5 Adc IB1 = 500 mAdc IB2 = 500 mAdc

V

= 350 V

@ TC = 25°C @ TC = 125°C

t

s

ÎÎÎ

2.12

2.6

2.4

µs

Crossover Time

VZ = 350 V

LC = 300 µH

@ TC = 25°C @ TC = 125°C

t

c

ÎÎÎ

355 750

500

ns

Fall Time

@ TC = 25°C @ TC = 125°C

t

f

ÎÎÎ

95

230

150

ns

Storage Time

C

= 2 Adc IB1 = 400 mAdc IB2 = 400 mAdc

V

= 300 V

@ TC = 25°C @ TC = 125°C

t

s

2.1

ÎÎÎ

2.9

2.4

µs

Crossover Time

VZ = 300 V

LC = 200 µH

@ TC = 25°C @ TC = 125°C

t

c

ÎÎÎ

300 700

450

ns

Fall Time

@ TC = 25°C @ TC = 125°C

t

f

ÎÎÎ

70

100

90

ns

Storage Time

C

= 1 Adc IB1 = 100 mAdc IB2 = 500 mAdc

V

= 300 V

@ TC = 25°C @ TC = 125°C

t

s

ÎÎÎ

0.7

1.05

0.9

µs

Crossover Time

VZ = 300 V

LC = 200 µH

@ TC = 25°C @ TC = 125°C

t

c

ÎÎÎ

75

160

120

ns

V

EC

t

fr

IC = 2.5 Adc, IB1 = 0.5 Adc

IC = 2 Adc, IB1 = 0.4 Adc

IC = 2.5 Adc, IB1 = 0.5 Adc

IC = 2.5 Adc

IC = 2 Adc

IC = 1 Adc

V

ns

MJE18004D2

4

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt

100

10

1

1010.10.010.001

IC, COLLECTOR CURRENT (AMPS)

h

FE

, DC CURRENT GAIN

TJ = 125°C

TJ = 25°C

TJ = –20°C

VCE = 1 V

Figure 2. DC Current Gain @ 5 Volt

100

10

1

1010.10.010.001

IC, COLLECTOR CURRENT (AMPS)

h

FE

, DC CURRENT GAIN

TJ = 125°C

TJ = –20°C

VCE = 5 V

Figure 3. Collector Saturation Region

3

2

0

1010.10.01

IB, BASE CURRENT (mA)

IC = 500 mA

Figure 4. Collector–Emitter Saturation Voltage

10

1

0.1

1010.10.010.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125

°

C

TJ = 25°C

TJ = –20°C

IC/IB = 5

V

CE

, VOLTAGE (VOLTS)

V

CE

, VOLTAGE (VOLTS)

1

TJ = 25°C

1 A

5 A

Figure 5. Collector–Emitter Saturation Voltage

10

1

0.1

100.10.010.001

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Collector–Emitter Saturation Voltage

10

1

0.1

100.10.010.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125

°

C

TJ = –20°C

V

CE

, VOLTAGE (VOLTS)

V

CE

, VOLTAGE (VOLTS)

1

IC/IB = 10

TJ = 125°C

TJ = –20°C

IC/IB = 20

4 A

3 A

2 A

TJ = 25°C

1

MJE18004D2

5

Motorola Bipolar Power Transistor Device Data

TYPICAL STATIC CHARACTERISTICS

Figure 7. Base–Emitter Saturation Region

10

1

0.1

100.10.010.001

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Base–Emitter Saturation Region

10

1

0.1

100.10.010.001

IC, COLLECTOR CURRENT (AMPS)

TJ = 125

°

C

TJ = –20°C

V

BE

, VOLTAGE (VOLTS)

V

BE

, VOLTAGE (VOLTS)

1

TJ = 125°C

TJ = 25°C

TJ = –20°C

IC/IB = 10

1

IC/IB = 5

Figure 9. Base–Emitter Saturation Region

10

1

0.1

100.10.010.001

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Forward Diode Voltage

10

1

0.1

100.10.01

REVERSE EMITTER–COLLECTOR CURRENT (AMPS)

125

°

C

25°C

V

BE

, VOLTAGE (VOLTS)

FORWARD DIODE VOLTAGE (VOLTS)

TJ = 125°C

TJ = –20°C

1

IC/IB = 20

Figure 11. Capacitance

1000

10

100101

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

100

Cib (pF)

C

ob

TJ = 25°C f

(test)

= 1 MHz

Figure 12. BVCER = f(RBE)

1200

600

100010010

BASE–EMITTER RESISTOR (

Ω

)

COLLECTOR EMITTER VOLTAGE (VOLTS)

TC = 25°C

BVCER @ ICER = 10 mA

1000

800

BVCER(sus) @ ICER = 200 mA, Lc = 25 mH

1

TJ = 25°C

MJE18004D2

6

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Figure 13. Resistive Switch Time, t

on

3200

0

4

2

1

IC, COLLECTOR CURRENT (AMPS)

3

t, TIME (ns)

2400

1600

800

TJ = 125°C TJ = 25

°

C

IC/IB = 10

IC/IB = 5

I

Bon

= I

Boff

VCC = 300 V PW = 20 µs

Figure 14. Resistive Switch Time, t

off

5

2

0

431

IC, COLLECTOR CURRENT (AMPS)

Figure 15. Inductive Storage Time,

tsi @ IC/IB = 5

4

2

0

410

IC, COLLECTOR CURRENT (AMPS)

3

1

3

t, TIME ( s)

µ

t, TIME ( s)

µ

4

1

TJ = 125°C TJ = 25

°

C

IC/IB = 10

IC/IB = 5

I

Bon

= I

Boff

VCC = 300 V PW = 20 µs

2

TJ = 125°C TJ = 25

°

C

I

Bon

= I

Boff

VCC = 15 V VZ = 300 V LC = 200

µ

H

Figure 16. Inductive Storage Time,

tsi @ IC/IB = 10

2

IC/IB = 5

4

2

0

410

IC, COLLECTOR CURRENT (AMPS)

3

1

t, TIME ( s)

µ

2

TJ = 125°C TJ = 25

°

C

I

Bon

= I

Boff

VCC = 15 V VZ = 300 V LC = 200

µ

H

IC/IB = 10

Figure 17. Inductive Switching Time,

tc & tfi @ IC/IB = 5

1000

0

410

IC, COLLECTOR CURRENT (AMPS)

3

t, TIME (ns)

800

600

200

TJ = 125°C TJ = 25

°

C

400

2

I

Bon

= I

Boff

VCC = 15 V VZ = 300 V LC = 200

µ

H

IC/IB = 5

Figure 18. Inductive Switching Time,

tfi @ IC/IB = 10

1000

0

410

IC, COLLECTOR CURRENT (AMPS)

3

t, TIME (ns)

800

600

200

TJ = 125°C TJ = 25

°

C

400

2

I

Boff

= I

Bon

VCC = 15 V VZ = 300 V LC = 200

µ

H

IC/IB = 10

t

c

t

fi

MJE18004D2

7

Motorola Bipolar Power Transistor Device Data

, STORAGE TIME (t

si

µ

s)

TYPICAL SWITCHING CHARACTERISTICS

Figure 19. Inductive Switching, tc @ IC/IB = 10

1600

800

0

420

IC, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

1200

TJ = 125°C TJ = 25

°

C

400

1 3

IC/IB = 10

I

Boff

= I

Bon

VCC = 15 V VZ = 300 V LC = 200

µ

H

Figure 20. Inductive Storage Time

5

2

200

hFE, FORCED GAIN

4

3

5 10 15

TJ = 125°C TJ = 25

°

C

IC = 2 A

I

Bon

= I

Boff

VCC = 15 V VZ = 300 V LC = 200

µ

H

IC = 1 A

Figure 21. Inductive Fall Time

1000

0

2082

hFE, FORCED GAIN

Figure 22. Inductive Crossover Time

2000

500

0

2082

hFE, FORCED GAIN

1500

1000

600

t

fi

, FALL TIME (ns)

t

c

, CROSSOVER TIME (ns)

800

400

200

4 6 10 12

TJ = 125°C TJ = 25

°

C

I

Boff

= I

Bon

VCC = 15 V VZ = 300 V LC = 200

µ

H

14

I

Bon

= I

Boff

VCC = 15 V VZ = 300 V LC = 200

µ

H

TJ = 125°C TJ = 25

°

C

14 16 18

IC = 1 A

IC = 2 A

IC = 1 A

Figure 23. Inductive Storage Time, t

si

4

2

1

40.5

IC, COLLECTOR CURRENT (AMPS)

1.51

I

Bon

= I

Boff

VCC = 15 V VZ = 300 V LC = 200

µ

H

3

t, TIME ( s)

µ

2 2.5 3 3.5

IB = 50 mA

IB = 100 mA

IB = 200 mA

IB = 500 mA

IB = 1 A

Figure 24. Forward Recovery Time, T

FR

420

300

210.50

IF, FORWARD CURRENT (AMP)

dI/dt = 10 A/µs TC = 25

°

C

1.5

t

fr

, FORWARD RECOVERY TIME (ns)

380

340

MJE18004D2

8

Motorola Bipolar Power Transistor Device Data

10

4

0

820 6

8

6

2

4

9

7

5

3

1

1 3 5

7

I

B

I

C

V

clamp

t

si

t

c

t

fi

90% I

C

10% I

C

90% I

B1

10% V

clamp

V

CE

0 V

I

B

90% I

B

1 µs

3 µs

dyn 1 µs

dyn 3 µs

Figure 25. Dynamic Saturation

Voltage Measurements

TIME

VOLTS

Figure 26. Inductive Switching Measurements

TYPICAL SWITCHING CHARACTERISTICS

Figure 27. tfr Measurements

0

1060

V

F

I

F

2 84

VFR (1.1 VF unless otherwise specified)

V

FRM

t

fr

V

F

0.1 V

F

10% I

F

TIME

MJE18004D2

9

Motorola Bipolar Power Transistor Device Data

TYPICAL SWITCHING CHARACTERISTICS

Table 1. Inductive Load Switching Drive Circuit

V

(BR)CEO(sus)

L = 10 mH RB2 =

∞

VCC = 20 Volts I

C(pk)

= 100 mA

Inductive Switching

L = 200

µ

H RB2 = 0 VCC = 15 Volts RB1 selected for

desired Ib1

RBSOA

L = 500

µ

H RB2 = 0 VCC = 15 Volts RB1 selected for

desired Ib1

+15 V

1

µ

F

150

Ω

3 W

100

Ω

3 W

MPF930

+10 V

50

Ω

COMMON

–V

off

500

µ

F

MPF930

MTP8P10

MUR105

MJE210

MTP12N10

MTP8P10

150

Ω

3 W

100 µF

I

out

A

1

µ

F

R

B2

R

B1

IC PEAK

VCE PEAK

V

CE

I

B

IB1

IB2

TYPICAL CHARACTERISTICS

Figure 28. Forward Bias Safe Operating Area

100

0.01 100010

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 29. Reverse Bias Safe Operating Area

6

2

0

1000200

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

4

100 600

1

0.1

I

C

, COLLECTOR CURRENT (AMPS)

I

C

, COLLECTOR CURRENT (AMPS)

DC

5 ms

1 ms

10 µs

1 µs

EXTENDED

SOA

3

1

0 V –1.5 V

–5 V

TC ≤ 125°C GAIN

≥

5

LC = 2 mH

10

5

400 800

MJE18004D2

10

Motorola Bipolar Power Transistor Device Data

TYPICAL CHARACTERISTICS

POWER DERATING FACTOR

Figure 30. Forward Bias Power Derating

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC–V

CE

limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 28 is based on TC = 2 5°C; TJ(pk) i s variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as t hermal l imitations. A llowable current a t the voltages shown on Figure 28 may be found at any case temperature by using the appropriate curve on Figure 30.

TJ(pk) may be calculated from the data in Figure 31. At any case temperatures, thermal limitations will reduce the power that c an b e handled to v alues less t han the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse biased. The safe level is specified as a reverse– biased safe operating area (Figure 29). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

TC, CASE TEMPERATURE (°C)

1.0

0.8

0.6

0.4

0.2

0

16014012010080604020

SECOND

BREAKDOWN

DERATING

THERMAL

DERATING

Figure 31. Typical Thermal Response (Z

θJC(t)

) for MJE18004D2

TYPICAL THERMAL RESPONSE

1

0.01

100.10.01

t, TIME (ms)

0.1

1 100 1000

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

R

θ

JC

(t) = r(t) R

θ

JC

R

θ

JC

= 2.5

°

C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

0.05

SINGLE PULSE

0.5

0.2

0.1

0.02

MJE18004D2

11

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93

J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04

B

Q

H

Z

L

V

G

N

A

K

F

1 2 3

4

D

SEATING PLANE

–T–

C

S

T

U

R J

MJE18004D2

12

Motorola Bipolar Power Transistor Device Data

How to reach us: USA /EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

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MJE18004D2/D

*MJE18004D2/D*

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