Datasheet MJE18002D2 Datasheet (Motorola)

Page 1
1
Motorola Bipolar Power Transistor Device Data
 
  &    $  &%"'  %+' '$( ()%' + ) $)') %"")%'# ))'  % $ * ") $   $) $) ()*') %$ )+%'!
the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.
The main advantages brought by these new transistors are:
Improved Global Efficiency Due to the Low Base Drive Requirements
DC Current Gain Typically Centered at 45
Extremely Low Storage Time Variation, Thanks to the Antisaturation Network
Easy to Use Thanks to the Integrated Collector/Emitter Diode
The MOTOROLA “ Sig S ixma” p hilosophy p rovides tight and r eproductible
parameter distribution.
*High speed High gain BIPolar transistor
**Power Factor Control
MAXIMUM RATINGS
Rating
Symbol
ОООООООО
ОООООООО
ОООООООО
Value
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Unit
Collector–Emitter Sustaining Voltage
V
CEO
ОООООООО
ОООООООО
ОООООООО
450
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Base Breakdown Voltage
V
CBO
ОООООООО
ОООООООО
ОООООООО
1000
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector–Emitter Breakdown Voltage
V
CES
ОООООООО
ОООООООО
ОООООООО
1000
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Emitter–Base Voltage
V
EBO
ОООООООО
ОООООООО
ОООООООО
12
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
ОООООООО
ОООООООО
ОООООООО
2 5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
ОООООООО
ОООООООО
ОООООООО
ОООООООО
1 2
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
ОООООООО
ОООООООО
ОООООООО
ОООООООО
50
0.4
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
ОООООООО
ОООООООО
ОООООООО
–65 to 150
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
ОООООООО
ОООООООО
ОООООООО
ОООООООО
2.5
62.5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8 from case for 5 seconds
T
L
ОООООООО
ОООООООО
ОООООООО
260
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
This document contains information on a new product. Specifications and information herein are subject to change without notice. Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE18002D2/D
Motorola, Inc. 1995

POWER TRANSISTORS
2 AMPERES 1000 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
Page 2
MJE18002D2
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
V
CEO(sus)
450
570
Vdc
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
I
CEO
100
µAdc
Collector Cutoff Current (VCE = Rated V
CES
, VEB = 0)
Collector Cutoff Current (VCE = 500 V, VEB = 0)
@ TC = 25°C @ TC = 125°C @ TC = 125°C
I
CES
100 500 100
µAdc
Emitter–Cutoff Current
(VEB = 10 Vdc, IC = 0)
I
EBO
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc) (IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C @ TC = 25°C
V
BE(sat)
0.78
0.87
1
1.1
Vdc
Collector–Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 25°C @ TC = 125°C
0.36
0.5
0.6 1
(IC = 1 Adc, IB = 0.2 Adc)
@ TC = 25°C @ TC = 125°C
0.4
0.65
0.75
1.2
DC Current Gain
(IC = 0.4 Adc, VCE = 1 Vdc)
@ TC = 25°C @ TC = 125°C
14
8
25 15
(IC = 1 Adc, VCE = 1 Vdc)
@ TC = 25°C @ TC = 125°C
6 4
10
6
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
f
T
13
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
50
100
pF
Input Capacitance
(VEB = 8 Vdc)
C
ib
340
500
pF
DIODE CHARACTERISTICS
Forward Diode Voltage
(IEC = 1 Adc)
@ TC = 25°C
1.2
1.5
(IEC = 0.2 Adc)
@ TC = 25°C @ TC = 125°C
0.9
0.6
1.2
(IEC = 0.4 Adc)
@ TC = 25°C @ TC = 125°C
1
0.6
1.3
Forward Recovery Time
(IF = 0.2 Adc, di/dt = 10 A/µs)
@ TC = 25°C
540
(IF = 0.4 Adc, di/dt = 10 A/µs)
@ TC = 25°C
517
(IF = 1 Adc, di/dt = 10 A/µs)
@ TC = 25°C
480
V
CE(sat)
Vdc
h
FE
V
EC
t
fr
V
ns
Page 3
MJE18002D2
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
ÎÎÎ
ÎÎÎ
ÎÎÎ
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 µs)
Turn–on Time
@ TC = 25°C @ TC = 125°C
t
on
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
100
94
150
ns
Turn–off Time
IB2 = 0.5 Adc
VCC = 300 Vdc
@ TC = 25°C @ TC = 125°C
t
off
0.95
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.5
1.25
µs
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C @ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
130 120
175
ns
Storage Time
IC = 0.4 Adc
IB1 = 40 mAdc
I
= 0.2 Adc
@ TC = 25°C @ TC = 125°C
t
s
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
0.55
0.7
0.65
µs
Crossover Time
IB2 = 0.2 Adc
@ TC = 25°C @ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
110
100
175
ns
Fall Time
@ TC = 25°C @ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
130 140
175
ns
Storage Time
IC = 0.8 Adc IB1 = 160 mAdc I
= 160 mAdc
@ TC = 25°C @ TC = 125°C
t
s
2.1
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
3
2.4
µs
Crossover Time
IB2 = 160 mAdc
@ TC = 25°C @ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
275 350
350
ns
Fall Time
@ TC = 25°C @ TC = 125°C
t
f
ÎÎÎ
ÎÎÎ
ÎÎÎ
100 100
150
ns
Storage Time
IC = 1 Adc IB1 = 0.2 Adc I
= 0.5 Adc
@ TC = 25°C @ TC = 125°C
t
s
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.05
1.45
1.2
µs
Crossover Time
IB2 = 0.5 Adc
@ TC = 25°C @ TC = 125°C
t
c
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
100
115
150
ns
DYNAMIC SATURATION VOLTAGE
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 1 µs
@ TC = 25°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
7.4
Voltage:
Determined 1 µs and
IB1 = 40 mA
VCC = 300 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 3 µs
@ TC = 25°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
2.5
µs and 3 µs respectively after rising I
reaches
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 1 µs
@ TC = 25°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
11.7
rising IB1 reaches 90% of final I
B1
IB1 = 0.2 A
VCC = 300 V
ÎÎÎ
ÎÎÎ
ÎÎÎ
@ 3 µs
@ TC = 25°C
ÎÎÎ
ÎÎÎ
ÎÎÎ
1.3
IC = 1 Adc, IB1 = 0.2 Adc
Dynamic Saturation
IC = 0.4 Adc
V
CE(dsat)
V
IC = 1 Adc
Page 4
MJE18002D2
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A–06
TO–220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING PLANE
–T–
C
S
T
U
R J
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MJE18002D2/D
*MJE18002D2/D*
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