Datasheet MJE16106 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

  

   

Switchmode Bridge Series

. . . specifically designed for use in half bridge and full bridge off line converters.

• Excellent Dynamic Saturation Characteristics

• Rugged RBSOA Capability

• Collector–Emitter Sustaining Voltage — V

CEO(sus)

— 400 V

• Collector–Emitter Breakdown — V

(BR)CES

— 650 V

• State–of–Art Bipolar Power Transistor Design

• Fast Inductive Switching:

tfi = 30 ns (Typ) @ 100_C tc = 65 ns (Typ) @ 100_C tsv = 1.3 µs (Typ) @ 100_C

• Ultrafast FBSOA Specified

• 100_C Performance Specified for:

RBSOA Inductive Load Switching Saturation Voltages Leakages

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Sustaining Voltage

V

CEO(sus)

400

Vdc

Collector–Emitter Breakdown Voltage

V

CES

650

Vdc

Emitter–Base Voltage

V

EBO

6

Vdc

Collector Current — Continuous

— Pulsed (1)

I

C

I

CM

8

16

Adc

Base Current — Continuous

— Pulsed (1)

I

B

I

BM

6

12

Adc

Total Power Dissipation @ TC = 25_C

@ TC = 100_C

Derated above 25_C

P

D

100

40

0.8

Watts

W/_C

Operating and Storage Temperature

TJ, T

stg

–55 to 150

_

C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

R

θJC

1.25

_

C/W

Maximum Lead Temperature for

Soldering Purposes 1/8″ from Case for 5 Seconds

T

L

275

_

C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

Designer’s Data for “Worst Case” Conditions —The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves —representing boundaries on device characteristics —are given to facilitate “worst case” design.

Designer’s and SWITCHMODE are trademarks of Motorola Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE16106/D

 Motorola, Inc. 1995



POWER TRANSISTORS

8 AMPERES

400 VOLTS

100 AND 125 WATTS

CASE 221A–06

TO–220AB

REV 1

MJE16106

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 20 mAdc, IB = 0)

V

CEO(sus)

400

—

ÎÎÎ

Vdc

Collector Cutoff Current

(VCE = 650 Vdc, V

BE(off)

= 1.5 V)

(VCE = 650 Vdc, V

BE(off)

= 1.5 V, TC = 100_C)

I

CEV

— —

100

1000

ÎÎÎ

µAdc

Collector Cutoff Current

(VCE = 650 Vdc, RBE = 50 Ω, TC = 100_C)

I

CER

—

1000

ÎÎÎ

µAdc

Emitter–Base Leakage

(VEB = 6.0 Vdc, IC = 0)

I

EBO

—

10

ÎÎÎ

µAdc

ON CHARACTERISTICS (1)

Collector–Emitter Saturation Voltage

(IC = 2.5 Adc, IB = 0.25 Adc) (IC = 5.0 Adc, IB = 0.5 Adc) (IC = 5.0 Adc, IB = 1.0 Adc) (IC = 5.0 Adc, IB = 1.0 Adc, TC = 100_C)

V

CE(sat)

— — — —

0.2

0.4

0.2

0.3

0.9

2.0

1.0

1.5

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 5.0 Adc, IB = 1.0 Adc) (IC = 5.0 Adc, IB = 1.0 Adc, TC = 100_C)

V

BE(sat)

— —

0.9

0.8

1.5

ÎÎÎ

Vdc

DC Current Gain

(IC = 8.0 Adc, VCE = 5.0 Vdc)

h

FE

6

13

22

ÎÎÎ

—

DYNAMIC CHARACTERISTICS

Dynamic Saturation

V

CE(dsat)

See Figures 11, 12, and 13

ÎÎÎ

V

Output Capacitance

(VCE = 10 Vdc, IE = 0, f

test

= 1.0 kHz)

C

ob

—

300

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Inductive Load (Table 1)

Storage

t

sv

—

950

2000

ÎÎÎ

Crossover

_

C

t

c

—

45

150

ÎÎÎ

Fall Time

_

C

t

fi

—

20

75

ÎÎÎ

Storage

V

BE(off)

= 5 V,

V

CE(pk)

= 250 V

t

sv

—

1300

2600

ÎÎÎ

Crossover

CE(pk)

= 250 V

_

C

t

c

—

65

200

ÎÎÎ

Fall Time

_

C

t

fi

—

30

125

ÎÎÎ

Resistive Load (Table 2)

Delay Time

t

d

—

30

—

ÎÎÎ

Rise Time

t

r

—

200

—

ÎÎÎ

Storage Time

IC = 5.0 A, IB1 = 0.5 A, VCC = 250 V,

IB2 = 1.0 A

t

s

—

1800

—

ÎÎÎ

Fall Time

VCC = 250 V, PW = 30 µs,

t

f

—

100

—

ÎÎÎ

Storage Time

Duty Cycle = v 2.0%

t

s

—

1200

—

ÎÎÎ

Fall Time

v

2.0%

V

BE(off)

= 5 V

t

f

—

70

—

ÎÎÎ

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle v 2.0%.

IC = 5.0 A, IB1 = 0.5 A,

TJ = 25

TJ = 100

ns

MJE16106

3

Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF)

V

BE

, BASE–EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

0.05 0.2 2 5

20

h

FE

, DC CURRENT GAIN

0.1 1

2

0.01

0.5

40 30

7

0.02

VCE = 5.0 V

TJ = 100°C

TJ = 25°C

TJ = –55°C

10

IC, COLLECTOR CURRENT (AMPS)

Figure 2. Collector–Emitter Saturation Voltage

0.5

3

0.2

0.03

0.07

1

0.1

0.05

Figure 3. Collector–Emitter Saturation Region

.01

IB, BASE CURRENT (AMPS)

.07.02

1

0.2

0.07 .03 .05 0.1 5

5

0.5

IC = 1 A 3 A

0.2 1 2

5 A

8 A

7 A

3

Figure 4. Base–Emitter Saturation Region

0.1 0.70.2

1.0

0.5

0.2

0.3 0.5 1 10

2.0

0.7

1.5

2 3 5 7

Figure 5. Capacitance

10K

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

C

ib

0.1

5K 2K

1K

500 200

100

50 20

10

0.2 0.5 1 2 5 10 20 50 100 500

300

3K

200

30

1000

TJ = 25°C f = 1.0 kHz

10

5

3

0.3

2

0.7

0.5 32 50.7 1

0.1 0.2

10

IC/IB = 5 IC/IB = 10

IC, COLLECTOR CURRENT (AMPS)

IC/IB = 10 IC/IB = 5

0.3

7

0.7

0.1

0.05

3

0.3

2

0.3

7K

700

70

0.3 0.50.7 7 10

C

ob

TJ = 100°C

TJ = 25°C

TJ = 100°C

TYPICAL STATIC CHARACTERISTICS

MJE16106

4

Motorola Bipolar Power Transistor Device Data

t

c

, CROSSOVER TIME (ns)

, STORAGE TIME (ns)t

sv

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Inductive Storage Time

20K

7K 5K

2K

200

500

IB2 = I

B1

1K

3K

2 3 5 71.5 1510

IC, COLLECTOR CURRENT (AMPS)

700

300 200

70 50

10

Figure 7. Crossover Time

30

1K

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Collector Current Fall Time

t

fi

, FALL TIME (ns)

1 K 700 500

100

10

20

50

200

2 3 5 71.5 10

Figure 9. Inductive Switching Measurements

TIME

Figure 10. Peak Reverse Base Current

IC = 5.0 A TJ = 25

°

C

2

0

4 8 10

6

10

8

4

2

6

I

B2

, REVERSE BASE CURRENT (AMPS)

V

BE(off)

, REVERSE BASE VOLTAGE (VOLTS)

300

700

10K

2 3 5 71.5 1510

500

100

20

30

70

300

IB1 = 1.0 A

1

7

5

3

1 3 7 950

9

t, TIME

V

CE

90% I

B1

t

sv

I

C(pk)

V

CE(pk)

90% V

CE(pk)

90% I

C(pk)

t

c

10% V

CE(pk)

10%

I

C(pk)

I

C

I

B

2% I

C

t

rv

t

fi

t

ti

IB2 = 2 (IB1)

V

BE(off)

= 2 V

V

BE(off)

= 5 V

IB2 = I

B1

V

BE(off)

= 2 V

V

BE(off)

= 5 V

IB2 = 2 (IB1)

IB2 = I

B1

V

BE(off)

= 2 V

V

BE(off)

= 5 V

IB2 = 2 (IB1)

IB1 = 1.0 A

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS

IC/IB = 10, TC = 100°C, V

CE(pk)

= 250 V

MJE16106

5

Motorola Bipolar Power Transistor Device Data

+15

150

Ω

100

Ω

100 µF

MTP8P10

MPF930

MUR105

MJE210

150

Ω

500 µF

V

off

50

Ω

+10

MTP12N10

MTP8P10

R

B1

R

B2

A

1

µ

F

1

µ

F

Drive Circuit

*Tektronix AM503

*P6302 or Equivalent

Scope — Tektronix 7403 or Equivalent

T1[

L

coil(ICpk

)

V

CC

Note: Adjust V

off

to obtain desired V

BE(off)

at Point A.

T1 adjusted to obtain I

C(pk)

T

1

+V

–V

0 V

A

*I

B

*I

C

L

T.U.T.

MR918

V

clamp

V

CC

I

C(pk)

V

CE(pk)

V

CE

I

B

I

C

I

B1

I

B2

V

CEO(sus)

L = 10 mH RB2 = ∞ VCC = 20 Volts I

C(pk)

= 20 mA

Inductive Switching

L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired I

B1

RBSOA

L = 200 µH RB2 = 0 VCC = 20 Volts RB1 selected for desired I

B1

Table 1. Inductive Load Switching

td and t

r

ts and t

f

H.P. 214

OR

EQUIV.

P.G.

50

RB = 8.5

Ω

*I

B

*I

C

T.U.T.

R

L

V

CC

V

in

0 V

≈

11 V

tr

≤

15 ns

*Tektronix AM503

*P6302 or Equivalent

V

CC

250 Vdc

R

L

25 Ω

I

C

5 A

I

B

0.5 A

+15

150

Ω

100

Ω

100 µF

MTP8P10

MPF930

MUR105

MJE210

150

Ω

500 µF

V

off

50

Ω

+10 V

MTP12N10

MTP8P10

R

B1

R

B2

A

1 µF

T.U.T.

*I

C

*I

B

A

R

L

V

CC

V

(off)

adjusted to give specified off drive

V

CC

250 V

I

C

5 A

I

B1

0.5 A

I

B2

Per Spec

R

B1

30 Ω

R

B2

Per Spec

R

L

25 Ω

Table 2. Resistive Load Switching

Figure 11. Definition of Dynamic Saturation

Measurement

t, TIME

I

B1

V

CE

90% I

B1

V

CE(dsat)

= DYNAMIC SATURATION VOLTAGE AND IS MEASURED FROM THE 90% POINT OF IB1 (t = 0) TO A MEASUREMENT POINT ON THE TIME AXIS (t1, t2 or t3 etc.)

t1t2t3t

4

0

t5t6t7t

8

Figure 12. Dynamic Saturation Voltage

0

IB, BASE CURRENT (AMPS)

1

4

0.5 2.5

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5

t = 1 µs

1 21.5

0

3

2

MAXIMUM TYPICAL

IC = 5 A TJ = 25

°

C

t = 2 µs

MJE16106

6

Motorola Bipolar Power Transistor Device Data

DYNAMIC SATURATION VOLTAGE

For bipolar power transistors low DC saturation voltages are achieved by conductivity modulating the collector region. Since conductivity modulation takes a finite amount of time, DC saturation voltages are not achieved instantly at turn–on. In bridge circuits, two transistor forward converters, and two transistor flyback converters dynamic saturation characteristics are responsible for the bulk of dynamic losses. The MJE16106 has been designed specifically to minimize these losses. Performance is roughly four times better than the original version of MJ16006.

From a measurement point of view, dynamic saturation voltage is defined as collector–emitter voltage at a specific point in time after IB1 has been applied, where t = 0 is the 90% point on the IB1 rise time waveform. This definition is illustrated in Figure 1 1. Performance data was taken in the circuit that is shown in Figure 13. The 24 volt rail allows a Tektronix 2445 or equivalent scope to operate at 1 volt per division without input amplifier saturation.

Dynamic saturation performance is illustrated in Figure 12. The MJE16106 reaches DC saturation levels in approximately 2 µs, provided that sufficient base drive is provided. The dependence of dynamic saturation voltage upon base drive suggests a spike of IB1 at turn–on to minimize dynamic saturation losses, and also avoid overdrive at turn–off. However, in order to simulate worst case conditions the guaranteed dynamic saturation limits in this data sheet are specified with a constant level of IB1.

+ 24

1 k

10 k

0.1

µ

F

0.01

µ

F

100 pF

U1

MC1455

(OSCILLATOR)

1N5314

Q1

1N4111

MJ11012

100

µ

F

100

Ω

1 W

2.4

Ω

20 W

0.01

µ

F

Q4

IRFD9120

Q5 MTM8P08

2.4 mH

1N5831

10

µ

F

I

C

I

B

V

CE

MUR405

47

Ω

1 W

500

Ω

Q2

Q3 IRFD113

0.01

µ

F

0.01

µ

F

IRFD9123

1N914

10 k

1.8 k

Q6 MTP25N06

4 8

7

6

2

1 5

3

4 8

2

3

7

6

1 5

Figure 13. Dynamic Saturation Test Circuit

T.U.T.

U2

MC1455

(25

µ

s)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 14. Maximum Rated Forward Bias

Safe Operating Area

Figure 15. Maximum Rated Reverse Bias

Safe Operating Area

20 18 16

10

0

2

4

14

100 200 300 5000 400

20

7

10

7

1

0.02 100

WIRE BOND LIMIT THERMAL LIMIT SECONDARY BREAKDOWN LIMIT

I

C

, COLLECTOR CURRENT (AMPS)

0.1

10 20 200 650

3

0.3

50

0.2

0.05

dc

TC = 25°C

1.0 ms 100 ns

8

10 µs

REGION II — EXPANDED FBSOA USING MUR870 ULTRAFAST RECTIFIER (SEE FIGURE 16)

I

C

, COLLECTOR CURRENT (AMPS)

0.7

2

0.03

5

0.5

0.07

30 30070 500

MJE16106

II

12

6

600 700 800 900 1K

IC/IB1 = 5

TJ ≤ 100°C

V

BE(off)

= 1 to 5 V

V

BE(off)

= 0 V

GUARANTEED SAFE OPERATING AREA INFORMATION

Figure 16. Switching Safe Operating Area

+15

150

Ω

100 µF

MTP8P10

MPF930

MUR105

MJE210

150

Ω

500 µF

V

Off

50

Ω

+10

MTP12N10

R

B1

R

B2

1

µ

F

1.0

µ

F

100

Ω

MTP8P10

MUR105

MUR170

T.U.T.

MUR870

VCE (650 V MAX)

10

µ

F

10 mH

Note: Test Circuit for Ultra–fast FBSOA

Note: RB2 = 0 and V

Off

= –5 Volts

MJE16106

7

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

1

0.01

0.7

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.05 1 2 5 10 20 50 100 200 500

Z

θ

JC(t)

= r(t) R

θ

JC

R

θ

JC

= 1.0 OR 1.25

°

C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

Z

θ

JC

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

D = 0.5

0.2

0.05

SINGLE PULSE

0.1

0.1 0.50.2

(NORMALIZED)

1.0 k

0.5

0.3

0.07

0.03

0.02

Figure 17. Power Derating

TC, CASE TEMPERATURE (°C)

Figure 18. Typical Thermal Response [Z

θJC

(t)]

100

0

120

POWER DERATING FACTOR (%)

40 200

80

40

20

THERMAL

DERATING

60

160

SECOND BREAKDOWN DERATING

0.02

0.01

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data in Figure 14 is based on TC = 25_C; T

J(pk)

is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do n ot derate the same as thermal limitations. Allowable current at the voltages shown on Figure 14 may be found at any case temperature by using the appropriate curve on Figure 17.

T

J(pk)

may be calculated from the data in Figure 18. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base–to–emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage–current condition allowable during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 15 gives the RBSOA characteristics.

SWITCHMODE III DESIGN CONSIDERATIONS

FBSOA

Allowable dc power dissipation in bipolar power transistors decreases dramatically with increasing collector–emitter voltage. A transistor which safely dissipates 100 watts at 10 volts will typically dissipate less than 10 watts at its rated V

(BR)CEO(sus)

. From a power handling point of view, current and voltage are not interchangeable (see Application Note AN875).

MJE16106

8

Motorola Bipolar Power Transistor Device Data

TURN–ON

Safe turn–on load line excursions are bounded by pulsed FBSOA curves. The 10 µs curve applies for resistive loads, most capacitive loads, and inductive loads that are clamped by standard or fast recovery rectifiers. Similarly, the 100 ns curve applies to inductive loads which are clamped by ultra– fast recovery rectifiers, and are valid for turn–on crossover times less than 100 ns (AN952).

At voltages above 75% of V

(BR)CEO(sus)

, it is essential to provide the transistor with an adequate amount of base drive VERY RAPIDLY at turn–on. More specifically, safe operation according to the curves is dependent upon base current rise time being less than collector current rise time. As a general rule, a base drive compliance voltage in excess of 10 volts is required to meet this condition (see Application Note AN875).

TURN–OFF

A bipolar transistor’s ability to withstand turn–off stress is dependent upon its forward base drive. Gross overdrive violates the RBSOA curve and risks transistor failure. For this reason, circuits which use fixed base drive are more likely to fail at light loads due to heavy overdrive (see Application Note AN875).

OPERATION ABOVE V

(BR)CEO(sus)

When bipolars are operated above collector–emitter breakdown, base drive is crucial. A rapid application of ade-

quate forward base current is needed for safe turn–on, as is a stiff negative bias needed for safe turn–off. Any hiccup in the base–drive circuitry that even momentarily violates either of these conditions will likely c ause the transistor to fail. Therefore, it is important to design the driver so that its output is negative in the absence of anything but a clean crisp input signal (see Application Note AN952).

RBSOA

Reversed Biased Safe Operating Area has a first order dependency on circuit configuration and drive parameters. The RBSOA curves in this data sheet are valid only for the conditions specified. For a comparison of RBSOA results in several types of circuits (see Application Note AN951).

DESIGN SAMPLES

Transistor parameters tend to vary much more from wafer lot to wafer lot, over long periods of time, than from one device to the next in the same wafer lot. For design evaluation it is advisable to use transistors from several different date codes.

BAKER CLAMPS

Many unanticipated pitfalls can be avoided by using Baker Clamps. MUR105 and MUR170 diodes are recommended for base drives less than 1 amp. Similarly, MUR405 and MUR470 types are well–suited for higher drive requirements (see Article Reprint AR131).

MJE16106

9

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04

B

Q

H

Z

L

V

G

N

A

K

F

1 2 3

4

D

SEATING PLANE

–T–

C

S

T

U

R J

MJE16106

10

Motorola Bipolar Power Transistor Device Data

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