Datasheet MJE16004, MJE16002 Datasheet (Motorola)

1

Motorola Bipolar Power Transistor Device Data

  

 
  "   !

These transistors are designed for high–voltage, high–speed switching of inductive
circuits where fall time and RBSOA are critical. They are particularly well–suited for
line–operated switchmode applications.

The M JE16004 is a h igh–gain version o f the MJE16002 and MJH16002 f or
applications where drive current is limited.
Typical Applications:

• Switching Regulators

• High Resolution Deflection Circuits

• Inverters

• Motor Drives

• Fast Switching Speeds

50 ns Inductive Fall Time @ 75_C (Typ)
70 ns Crossover Time @ 75_C (Typ)

• 100_C Performance Specified for:

Reverse–Biased SOA
Inductive Switching Times
Saturation Voltages
Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO(sus)

450

Vdc

Collector–Emitter Voltage

V

CEV

850

Vdc

Emitter–Base Voltage

V

EB

6.0

Vdc

Collector Current — Continuous

— Peak (1)

I

C

I

CM

5.0
10

Adc

Base Current — Continuous

— Peak (1)

I

B

I

BM

4.0

8.0

Adc

Total Power Dissipation @ TC = 25_C

@ TC = 100_C
Derate above TC = 25_C

P

D

80
32

0.64

Watts

W/_C

Operating and Storage Junction Temperature Range

TJ, T

stg

–65 to +150

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.56

_

C/W

Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds

T

L

275

_

C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJE16002/D

 Motorola, Inc. 1995




5.0 AMPERE

NPN SILICON

POWER TRANSISTORS

450 VOLTS

80 WATTS

*Motorola Preferred Device




CASE 221A–06

TO–220AB

REV 2

 

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Sustaining Voltage (Table 2)

(IC = 100 mA, IB = 0)

V

CEO(sus)

450

—

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector Cutoff Current

(V

CEV

= 850 Vdc, V

BE(off)

= 1.5 Vdc)

(V

CEV

= 850 Vdc, V

BE(off)

= 1.5 Vdc, TC = 100_C)

I

CEV

—
—

—
—

0.25

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Collector Cutoff Current

(VCE = 850 Vdc, RBE = 50 Ω, TC = 100_C)

I

CER

—

—

2.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0)

I

EBO

—

—

1.0

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

I

S/b

See Figure 17 or 18

Clamped Inductive SOA with Base Reverse Biased

RBSOA

See Figure 19

ON CHARACTERISTICS (1)

Collector–Emitter Saturation Voltage

(IC = 1.5 Adc, IB = 0.2 Adc) MJE16002
(IC = 1.5 Adc, IB = 0.15 Adc) MJE16004
(IC = 3.0 Adc, IB = 0.4 Adc) MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc) MJE16004
(IC = 3.0 Adc, IB = 0.4 Adc, TC = 100_C) MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc, TC = 100_C) MJE16004

V

CE(sat)

—
—
—
—
—
—

—
—
—
—
—
—

1.0

1.0

2.5

2.5

2.5

2.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 3.0 Adc, IB = 0.4 Adc) MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc) MJE16004
(IC = 3.0 Adc, IS = 0.4 Adc, TC = 100_C) MJE16002
(IC = 3.0 Adc, IB = 0.3 Adc, TC = 100_C) MJE16004

V

BE(sat)

—
—
—
—

—
—
—
—

1.5

1.5

1.5

1.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DC Current Gain

(IC = 5.0 Adc, VCE = 5.0 Vdc) MJE16002

MJE16004

h

FE

5.0

7.0

—
—

—
—

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

—

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f

test

= 1.0 kHz)

C

ob

—

—

200

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1) MJE16002/MJH10002

Delay Time

t

d

—

30

100

ÎÎÎ

ÎÎÎ

ÎÎÎ

Rise Time

B2

= 0.8 Adc,

t

r

—

100

300

ÎÎÎ

ÎÎÎ

ÎÎÎ

Storage Time

C

= 3.0 Adc,

VCC = 250 Vdc,

(IB2 = 0.8 Adc,
RB2 = 8.0 Ω)

t

s

—

1000

3000

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

IB1 = 0.4 Adc,
PW = 30 µs,

t

f

—

60

300

ÎÎÎ

ÎÎÎ

ÎÎÎ

Storage Time

PW = 30 µs,
Duty Cycle v 2.0%)

t

s

—

400

—

ÎÎÎ

ÎÎÎ

Fall Time

v

2.0%)

(V

BE(off)

= 5.0 Vdc)

t

f

—

130

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Resistive Load (Table 1) MJE16004/MJH16004

Delay Time

t

d

—

30

100

ÎÎÎ

ÎÎÎ

ÎÎÎ

Rise Time

B2

= 0.6 Adc,

t

r

—

130

300

ÎÎÎ

ÎÎÎ

ÎÎÎ

Storage Time

C

= 3.0 Adc,

VCC = 250 Vdc,

(IB2 = 0.6 Adc,
RB2 = 8.0 Ω)

t

s

—

800

2700

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

IB1 = 0.3 Adc,
PW = 30 µs,

t

f

—

80

350

ÎÎÎ

ÎÎÎ

ÎÎÎ

Storage Time

PW = 30 µs,
Duty Cycle v 2.0%)

t

s

—

250

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

v

2.0%)

(V

BE(off)

= 5.0 Vdc)

t

f

—

60

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

(1) Pulse Test: PW = 300 µs, Duty Cycle v 2%.

*

β

f

=

I

C

I

B1

(IC = 3.0 Adc,

(I

(IC = 3.0 Adc,

(I

ns

ns

 

3

Motorola Bipolar Power Transistor Device Data

SWITCHING CHARACTERISTICS (continued)

Characteristics

Symbol

Min

Typ

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

Inductive Load (Table 2) MJE16002

Storage Time

ОООООООО

ОООООООО

ОООООООО

t

sv

—

500

1600

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

ОООООООО

ОООООООО

ОООООООО

_

C)

t

fi

—

100

200

ÎÎÎ

ÎÎÎ

ÎÎÎ

Crossover Time

ОООООООО

ОООООООО

ОООООООО

(IC = 3.0 Adc,
IB1 = 0.4 Adc,

_

C)

t

c

—

120

250

ÎÎÎ

ÎÎÎ

ÎÎÎ

Storage Time

ОООООООО

ОООООООО

ОООООООО

IB1 = 0.4 Adc,
V

BE(off)

= 5.0 Vdc,

t

sv

—

600

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

ОООООООО

ОООООООО

ОООООООО

V

CE(pk)

= 400 Vdc)

_

C)

t

fi

—

120

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Crossover Time

ОООООООО

ОООООООО

ОООООООО

_

C)

t

c

—

160

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Inductive Load (Table 2) MJE16004

Storage Time

ОООООООО

ОООООООО

ОООООООО

t

sv

—

400

1300

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

ОООООООО

ОООООООО

ОООООООО

_

C)

t

fi

—

80

150

ÎÎÎ

ÎÎÎ

ÎÎÎ

Crossover Time

ОООООООО

ОООООООО

ОООООООО

(IC = 3.0 Adc,
IB1 = 0.3 Adc,

_

C)

t

c

—

90

200

ÎÎÎ

ÎÎÎ

ÎÎÎ

Storage Time

ОООООООО

ОООООООО

ОООООООО

IB1 = 0.3 Adc,
V

BE(off)

= 5.0 Vdc,

t

sv

—

450

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Fall Time

ОООООООО

ОООООООО

ОООООООО

V

CE(pk)

= 400 Vdc)

_

C)

t

fi

—

100

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

Crossover Time

ОООООООО

ОООООООО

ОООООООО

_

C)

t

c

—

110

—

ÎÎÎ

ÎÎÎ

ÎÎÎ

(1) Pulse Test: PW = 300 µs, Duty Cycle v 2%.

*

β

f

=

I

C

I

B1

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

V

BE

, BASE–EMITTER VOLTAGE (VOLTS) V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)

3.0

2.0

1.0

1.0

IC, COLLECTOR CURRENT (AMPS)

0.05

0.1

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMPS)

3.0

0.3 0.7 5.0 10

10

Figure 2. Collector Saturation Region

0.1
IB, BASE CURRENT (AMPS)

0.2 0.3

0.1

60

h

FE

, DC CURRENT GAIN

VCE = 5.0 V

0.5 0.7 1.0 2.0

Figure 3. Collector–Emitter Saturation Region Figure 4. Base–Emitter Voltage

2.0

0.3

TJ = 25°C

TJ = 100°C

20

0.5 2.0

1.0

0.070.03

0.3

0.5

25°C

– 55°C

2 A

IC = 1 A

5.0

0.2

1.0 3.0 7.0 3.0

0.1 2.0 100.50.2 1.0 5.0

0.7

1.5

50

30

7.0

0.5

0.7

0.2

0.05

β

f

= 10

TJ = 100

°

C

2.0

0.1

3.0

0.2

5.0

0.5

0.1 2.0 100.50.2 1.0 5.0

3 A 4 A 5 A

β

f

= 10

TJ = 25

°

C

β

f

= 5

TJ = 25

°

C

β

f

= 5

TJ = 25

°

C

β

f

= 10

TJ = 100

°

C

(TJ = 100

(TJ = 150

(TJ = 100

(TJ = 150

ns

ns

 

4

Motorola Bipolar Power Transistor Device Data

Figure 5. Collector Cutoff Region

10

4

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10

–1

0–0.4

Figure 6. Capacitance

10000

VR, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

C

ib

0.1

, COLLECTOR CURRENT ( A)

µ

I

C

10

3

10

2

10

1

10

0

–0.2 +0.2 +0.4 +0.6

TJ = 150°C

125°C

100°C

75°C

REVERSE FORWARD

25°C

VCE = 250 Vdc

100

850

TJ = 25°C

1000

10

100101.0

C

ob

TYPICAL STATIC CHARACTERISTICS (continued)

, STORAGE TIME (ns)t

sv

, STORAGE TIME (ns)t

sv

IC, COLLECTOR CURRENT (AMPS)

10000

5000

2000

100

200

1000

500

0.7 1.0 2.00.5 5.0

Figure 7. Storage Time Figure 8. Storage Time

IC, COLLECTOR CURRENT (AMPS)

t

fi

, COLLECTOR CURRENT FALL TIME (ns)

1000

500

200

10

20

100

50

0.7 1.00.5 5.0

IC, COLLECTOR CURRENT (AMPS)

t

fi

, COLLECTOR CURRENT FALL TIME (ns)

1000

500

200

10

20

100

50

0.7 1.00.5 5.0

Figure 9. Collector Current Fall Time Figure 10. Collector Current Fall Time

IC, COLLECTOR CURRENT (AMPS)

10000

5000

2000

100

200

1000

500

0.7 1.0 3.00.5 5.0

β

f

= 5

TJ = 75

°

C

VCC = 20 V

V

BE(off)

= 0 V

–2.0 V

0 V

V

BE(off)

= 0 V

2.0 3.0

2.03.02.0 3.0

V

BE(off)

= 2.0 V

V

BE(off)

= 0 V

V

BE(off)

= 5.0 V

β

f

= 10

TJ = 75

°

C

VCC = 20 V

V

BE(off)

= 2.0 V

V

BE(off)

= 5.0 V

V

BE(off)

= 2.0 V

V

BE(off)

= –5.0 V

β

f

= 5
TJ = 75°C
VCC = 20 V

–5.0 V

–2.0 V

0 V

V

BE(off)

= 0 V

V

BE(off)

= 2.0 V

β

f

= 10

TJ = 75

°

C

VCC = 20 V

–5.0 V

V

BE(off)

= 5.0 V

TYPICAL DYNAMIC CHARACTERISTICS

 

5

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

1000

500

200

10

20

100

50

0.7 1.00.5 5.0

IC, COLLECTOR CURRENT (AMPS)

t

c

, CROSSOVER TIME (ns)

1000

500

200

10

20

100

50

0.7 1.00.5 5.0

Figure 11. Crossover Time Figure 12. Crossover Time

2.0

3.02.0

3.0

t

c

, CROSSOVER TIME (ns)

–2.0 V

0 V

V

BE(off)

= 0 V

V

BE(off)

= 2.0 V

β

f

= 5

TJ = 75°C
VCC = 20 V

–5.0 V

V

BE(off)

= 5.0 V

–2.0 V

0 V

V

BE(off)

= 0 V

V

BE(off)

= 2.0 V

β

f

= 10
TJ = 75°C
VCC = 20 V

–5.0 V

V

BE(off)

= 5.0 V

TYPICAL DYNAMIC CHARACTERISTICS (continued)

TIME

V

CE

90% I

B1

t

sv

IC pk

V

CE(pk)

90% V

CE(pk)

90% I

C(pk)

t

c

10% V

CE(pk)

10%

IC pk

V

BE(off)

, REVERSE BASE VOLTAGE (VOLTS)

0 5.04.0 7.0 8.02.0

0

2.0

1.0

5.0

4.0

3.0

1.0 3.0 6.0

Figure 13. Inductive Switching Measurements Figure 14. Peak Reverse Base Current

IB1 = 0.6 A

IC = 3.0 A
TJ = 25

°

C

I

B2

, REVERSE BASE CURRENT (AMPS)

Figure 15. Thermal Response (MJE16002 and MJE16004)

t, TIME (ms)

1

0.01

0.01

0.2

0.1

0.05

0.02

0.05 1 2 5 10 20 50 100 200 500

R

θ

JC

(t) = r(t) R

θ

JC

R

θ

JC

= 156

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

D = 0.5

0.2

0.05

0.02

0.01
SINGLE PULSE

0.1

0.1 0.50.2

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

0.5

0.3

0.03

0.02 1 k

0.7

0.07

I

C

I

B

2% I

C

t

rv

t

fi

t

ti

IB1 = 0.3 A

TYPICAL ELECTRICAL CHARACTERISTICS

 

6

Motorola Bipolar Power Transistor Device Data

I

C

, COLLECTOR CURRENT (AMPS)

, COLLECTOR CURRENT (AMPS)I

C(pk)

10

0

1000100 500

β

f

≥

4

TJ

≤

100°C

850

V

BE(off)

= 1.0 to 5.0 V

0

V

CE(pk)

, PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)

200 700

V

BE(off)

= 0 V

10 µs

1.0 ms

dc

10

7.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

10 450

2.0

1.0

5.0

0.5

0.05

0.02

BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

30 70 100 200

TC = 25°C

0.2

0.01

Figure 16. Maximum Rated Forward Bias

Safe Operating Area (MJE16002 and MJE16004)

3005.0 20 50

Figure 17. Maximum Rated Reverse Bias

Safe Operating Area

9.0

6.0

7.0

8.0

3.0

4.0

5.0

1.0

2.0

TC, CASE TEMPERATURE (

°

C)

0

40 120 160

0.6

POWER DERATING FACTOR

SECOND BREAKDOWN

DERATING

1.0

0.8

0.4

0.2

60 100 14080

THERMAL

DERATING

20

Figure 18. Power Derating

0.1

SAFE OPERATING AREA INFORMATION

 

7

Motorola Bipolar Power Transistor Device Data

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 16 is based on TC = 25_C; T

J(pk)

is vari­able depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der­ate the same as thermal limitations. Allowable current at the
voltages shown on Figures 17 and 18 may be found at any
case temperature by using the appropriate curve on Figure

20.

T

J(pk)

may be calculated from the data in Figure 15. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations
imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe 0perating Area
and represents the voltage–current condition allowable pull­ing reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 17 gives the RBSOA character­istics.

H.P. 214
or Equiv.

P.G.

50

RB = 33

Ω

*I

B

*I

C

T.U.T.

R

L

V

CC

VCC = 250 Vdc
RL = 83

Ω

IC = 3.0 Adc
IB = 0.3 Adc

*Tektronix

*P–6042 or
*Equivalent

V

in

0 V

≈

11 V

tr

≤

15 ns

H.P. 214

or Equiv.

P.G.

0 V

≈

–35 V

ts and t

f

td and t

r

50

500

1.0

µ

F

10 µF

+
–

100

20

+Vdc

≈

11 Vdc

0.02

µ

F

A

R

B1

R

B2

2N5337

2N6191

–V

100

0.02

µ

F

R

L

V

CC

T.U.T.

*I

C

*I

B

A

0 V

+V

–5 V

VCC = 250
RL = 83

Ω

IC = 3.0 Adc

Note: Adjust –V to obtain desired V

BE(off)

at Point A.

IB1 = 0.3 Adc
IB2 = 0.6 Adc
For V

BE(off)

= 5.0 V

RB1 = 33

Ω

RB2 = 8.0

Ω

RB2 = 0

Ω

50

Table 1. Resistive Load Switching

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8

Motorola Bipolar Power Transistor Device Data

H.P. 214

or Equiv.

P.G.

≈

–35 V

0

50

500

0.02

µ

F

1.0

µ

F

100

2N5337

R

B1

R

B2

A

2N6191

+V

≈

11 V

100

0.02

µ

F

20

+
–

10

µ

F

T

1

+V

–V

0 V

A

*I

B

*I

C

T.U.T.

L

V

CC

V

clamp

MR856

V

CE

I

C

I

B

I

B1

I

B2

I

C(pk)

V

CE(pk)

Scope — Tektronix
7403 or
Equivalent

T1[

L

coil(ICpk

)

V

CC

Note: Adjust –V to obtain desired V

BE(off)

at Point A.

T1 adjusted to obtain I

C(pk)

V

CEO(sus)

L = 10 mH
RB2 = ∞
VCC = 20 Volts

Inductive Switching

L = 200 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for desired I

B1

RBSOA

L = 200 µH
RB2 = 0
VCC = 20 Volts
RB1 selected for desired I

B1

*Tektronix

*P–6042 or
*Equivalent

–V

50

+ –

Table 2. Inductive Load Switching

t

sv

tfi, t

c

I

C(pk)

= 3.0 Amps
IB1 = 0.3 Amp
V

BE(off)

= 5.0 Volts

V

CE(pk)

= 300 Volts
TC = 25°C
Time Base =
20 ns/cm

I

C(pk)

= 3.0 Amps
IB1 = 0.3 Amp
V

BE(off)

= 5.0 Volts

V

CE(pk)

= 300 Volts
TC = 25°C
Time Base =
20 ns/cm

TYPICAL INDUCTIVE SWITCHING WAVEFORMS

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9

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88

F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93

J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27

L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79

S 0.045 0.055 1.15 1.39

T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27

V 0.045 ––– 1.15 –––

Z ––– 0.080 ––– 2.04

B

Q

H

Z

L

V

G

N

A

K

F

1 2 3

4

D

SEATING
PLANE

–T–

C

S

T

U

R
J

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10

Motorola Bipolar Power Transistor Device Data

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MJE16002/D

*MJE16002/D*

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